公开(公告)号：US20190326453A1

公开(公告)日：2019-10-24

申请号：US16456621

申请日：2019-06-28

申请人： LG ELECTRONICS INC.

发明人： Jaewon CHANG ,  Kyungjin SHIM ,  Hyunjung PARK ,  Junghoon CHOI

IPC分类号： H01L31/0216 ,  H01L31/0747

摘要： A method for manufacturing a solar cell, includes providing a silicon substrate, forming an oxide layer on a first surface of the silicon substrate, forming a doped polycrystalline silicon layer on the oxide layer, forming a passivation layer on the doped polycrystalline silicon layer, printing a metal paste on the passivation layer, and forming a metal contact connected to the doped polycrystalline silicon layer by firing the metal paste to penetrate the passivation layer.

公开(公告)号：US20190296164A1

公开(公告)日：2019-09-26

申请号：US16365144

申请日：2019-03-26

申请人： SHARP KABUSHIKI KAISHA

发明人： TERUAKI HIGO ,  TAKESHI MORI ,  MAKOTO HIGASHIKAWA

IPC分类号： H01L31/0224 ,  H01L31/0747 ,  H01L31/02 ,  H01L31/0236 ,  H01L31/0216 ,  H01L31/20

摘要： The n-type amorphous semiconductor layers 4 are on parts of that one of the faces of the semiconductor substrate 1, there being provided no p-type amorphous semiconductor layers 5 in the parts. The electrodes 6 are disposed on the n-type amorphous semiconductor layers 4. The electrodes 7 are disposed on the p-type amorphous semiconductor layers 5. The p-type amorphous semiconductor layers 5 between those n-type amorphous semiconductor layers 4 which are adjacent along an in-plane direction of the semiconductor substrate 1 include, arranged along a first direction that points from the n-type amorphous semiconductor layers 4 toward the adjacent n-type amorphous semiconductor layers 4: first and second electrode-provided regions where the electrodes 7 are disposed; and a no-electrode-provided region, between the first and second electrode-provided regions, where there are provided no electrodes 7.

公开(公告)号：US20190288130A1

公开(公告)日：2019-09-19

申请号：US16092850

申请日：2017-04-07

申请人： MEYER BURGER (GERMANY) AG

发明人： Giuseppe CITARELLA ,  Hans-Peter SPERLICH ,  Gunnar KOEHLER ,  Frank WUENSCH ,  Detlef SONTAG ,  Heiko MEHLICH ,  Marcel KOENIG ,  Pierre PAPET

IPC分类号： H01L31/0216 ,  H01L31/0224 ,  H01L31/0376 ,  H01L31/18 ,  H01L31/20 ,  H01L31/0747

摘要： A solar cell with a heterojunction is produced. A first amorphous nano- and/or microcrystalline semiconductor layer is formed on the front face of a crystalline semiconductor substrate to form front face emitter or a front face surface field layer. A second such layer is formed on the rear face of the substrate to form a rear face surface field layer or a rear face emitter. Electrically conductive, transparent front face and rear face electrode layers and a frontal metallic contact layer grid structure are formed. Surface selective frontal PECVD deposition forms an electrically non-conductive, transparent dielectric front face cover layer and with such a thickness to form a closed layer directly on deposition, without additional heat and/or chemical treatment, only on the areas surrounding the frontal contact layer grid structure but not on the frontal contact layer grid structure. Finally, a rear face metallization is formed.

公开(公告)号：US20190259885A1

公开(公告)日：2019-08-22

申请号：US16401555

申请日：2019-05-02

申请人： KANEKA CORPORATION

发明人： Kunta Yoshikawa

IPC分类号： H01L31/0216 ,  H01L31/05 ,  H01L31/049 ,  H01L31/028 ,  H01L31/18 ,  H01L31/0747

摘要： A solar cell includes a rectangular crystalline silicon substrate having a rectangular first principal surface, a rectangular second principal surface, a first lateral surface, and a second lateral surface, one or more thin films, and a non-natural oxide film of silicon. The rectangular second principal surface may be positioned on a side opposite to the first principal surface. The first lateral surface may connect a first long side of the first principal surface and a first long side of the second principal surface, and the second lateral surface may be positioned on a side opposite to the first lateral surface and connect a second long side of the first principal surface and a second long side of the second principal surface. At least one of the first principal surface or the second principal surface may be covered with the one or more thin-films.

公开(公告)号：US10388804B2

公开(公告)日：2019-08-20

申请号：US15166593

申请日：2016-05-27

申请人： LG ELECTRONICS INC.

发明人： Indo Chung ,  Juhong Yang ,  Eunjoo Lee ,  Mihee Heo

IPC分类号： H01L31/18 ,  H01L31/068 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0745 ,  H01L31/0747

摘要： Disclosed is a method of manufacturing a solar cell, the method including forming a tunneling layer over one surface of a semiconductor substrate, forming a semiconductor layer over the tunneling layer, forming a conductive area including a first conductive area of a first conductive type and a second conductive area of a second conductive type in the semiconductor layer, and forming an electrode including a first electrode connected to the first conductive area and a second electrode connected to the second conductive area. The forming of the conductive area includes forming a mask layer over the semiconductor layer, forming a doping opening corresponding to at least one of the first conductive area and the second conductive area in the mask layer using a laser, and performing doping using the doping opening.

公开(公告)号：US10340403B2

公开(公告)日：2019-07-02

申请号：US15095530

申请日：2016-04-11

申请人： Panasonic Intellectual Property Management Co., Ltd.

发明人： Akiyoshi Ogane ,  Yasufumi Tsunomura

IPC分类号： H01L31/0747 ,  H01L31/0376 ,  H01L31/075 ,  H01L31/0224 ,  H01L31/0368 ,  H01L31/20

摘要： A photoelectric conversion device includes a crystalline semiconductor substrate having a first surface and a second surface and a first amorphous semiconductor layer formed over the first surface of the crystalline semiconductor substrate. An interface between the crystalline semiconductor substrate and the first amorphous semiconductor layer is an oxidized interface containing oxygen having a concentration of 1×1021/cm3 or greater. The first amorphous semiconductor layer includes a high-oxygen-concentration region having an oxygen concentration of 1×1020/cm3 or greater and 1×1021/cm3 or less within a range of 5 nm or less from the oxidized interface.

公开(公告)号：US20190198698A1

公开(公告)日：2019-06-27

申请号：US16048192

申请日：2018-07-27

申请人： Beijing Juntai Innovation Technology Co., Ltd.

发明人： GE CUI ,  YONGCAI HE ,  CAO YU ,  JINYAN ZHANG ,  XIXIANG XU

IPC分类号： H01L31/0747 ,  H01L31/18 ,  H01L31/0312

CPC分类号： H01L31/0747 ,  B32B2307/202 ,  B32B2307/412 ,  H01L31/02168 ,  H01L31/022475 ,  H01L31/03125 ,  H01L31/182 ,  H01L31/1884 ,  Y02E10/50

摘要： The present disclosure provides a thin film assembly and a method of preparing the same, and a hetero-junction cell including a thin film assembly. The thin film assembly comprises at least two transparent conductive oxide film layers superposed together, each of the at least two transparent conductive oxide film layers is an ITO film, the first ITO film layer is doped with a tin content of 10-15 wt %, and the second ITO film layer is doped with a tin content≥5 wt % and

公开(公告)号：US20190172963A1

公开(公告)日：2019-06-06

申请号：US16141693

申请日：2018-09-25

申请人： Beijing Juntai Innovation Technology Co., Ltd.

发明人： Cao Yu ,  Miao Yang ,  Xixiang Xu

IPC分类号： H01L31/05 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/028 ,  H01L31/02 ,  H01L31/0376 ,  H01L31/18 ,  H01L31/0236 ,  H01L31/048 ,  H01L31/0747

摘要： A solar cell sheet includes: a conductive connection member; and a first electrode, a first transparent conductive layer, a first doped layer of a first conductivity type, a first passivation layer, a monocrystalline silicon wafer, a second passivation layer, a second doped layer of a second conductivity type, a second transparent conductive layer, and a second electrode arranged in an order from top to bottom. One end of the conductive connection member is electrically connected to the first electrode, and the other end of the conductive connection member extends to a side of the second transparent conductive layer adjacent to the second electrode, and the conductive connection member is insulated from the second transparent conductive layer and the second electrode.

公开(公告)号：US10312384B2

公开(公告)日：2019-06-04

申请号：US15351455

申请日：2016-11-15

申请人： Industrial Technology Research Institute

发明人： Chao-Cheng Lin ,  Chien-Kai Peng ,  Chen-Cheng Lin ,  Chen-Hsun Du ,  Chorng-Jye Huang ,  Chun-Ming Yeh

IPC分类号： H01L31/0224 ,  H01L31/028 ,  H01L31/18 ,  H01L31/0747

摘要： A solar cell is provided. The solar cell includes a Si substrate having a first surface and a second surface opposite to each other, an emitter, a first electrode, a doped region, a passivation layer, a doped polysilicon layer, a semiconductor layer, and a second electrode. The emitter is disposed on the first surface. The first electrode is disposed on the emitter. The doped region is disposed in the second surface. The passivation layer is disposed on the second surface. The doped polysilicon layer is disposed on the passivation layer, wherein a plurality of holes penetrates the doped polysilicon layer and the passivation layer and exposes a portion of the second surface. The semiconductor layer is disposed on the doped polysilicon layer and in the holes. The band gap of the semiconductor layer is greater than that of the Si substrate. The second electrode is disposed on the semiconductor layer.

公开(公告)号：US10304984B2

公开(公告)日：2019-05-28

申请号：US13607004

申请日：2012-09-07

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/074 ,  H01L31/078 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0725 ,  H01L31/0747 ,  C23C14/34 ,  H01L31/18 ,  H01L31/20

摘要： A photovoltaic device and method include a doped germanium-containing substrate, an emitter contact coupled to the substrate on a first side and a back contact coupled to the substrate on a side opposite the first side. The emitter includes at least one doped layer of an opposite conductivity type as that of the substrate and the back contact includes at least one doped layer of the same conductivity type as that of the substrate. The at least one doped layer of the emitter contact or the at least one doped layer of the back contact is in direct contact with the substrate, and the at least one doped layer of the emitter contact or the back contact includes an n-type material having an electron affinity smaller than that of the substrate, or a p-type material having a hole affinity larger than that of the substrate.