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公开(公告)号：US20230046682A1
公开(公告)日：2023-02-16
申请号：US17886348
申请日：2022-08-11
发明人： Fuming WANG , Marco Jan-Jaco WIELAND , Yu CAO , Guohong ZHANG
摘要： An improved methods and systems for detecting defect(s) on a mask are disclosed. An improved method comprises inspecting an exposed wafer after the wafer was exposed, by a lithography system using a mask, with a selected process condition that is determined based on a mask defect printability under the selected process condition; and identifying, based on the inspection, a wafer defect that is caused by a defect on the mask to enable identification of the defect on the mask.
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公开(公告)号：US20220299456A1
公开(公告)日：2022-09-22
申请号：US17805752
申请日：2022-06-07
发明人： Riki OGAWA
IPC分类号： G01N23/2251 , H01J37/244 , H01J37/06 , G03F1/86
摘要： Provided is an inspection apparatus including: an irradiation source irradiating an electron beam to a pattern of an inspection target object, the inspection target object having a first surface and a second surface having the pattern; a first voltage application circuit applying a first voltage to the first surface; a second voltage application circuit applying a second voltage to the second surface; and a detector for acquiring an inspection image generated from the pattern by irradiating the electron beam, wherein |Vacc−VL|=|V2|
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公开(公告)号：US20220075262A1
公开(公告)日：2022-03-10
申请号：US17200867
申请日：2021-03-14
发明人： CHIH-WEI WEN , HSIN-FU TSENG , CHIEN-LIN CHEN
摘要： A method includes: receiving a photomask; patterning a wafer by directing a first radiation beam to the wafer through the photomask at a first tilt angle; and inspecting the photomask. The inspecting includes: directing a second radiation beam to the photomask at a second tilt angle greater than the first tilt angle; receiving a third radiation beam reflected from the photomask; and generating an image of the photomask according to the third radiation beam.
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公开(公告)号：US11256168B2
公开(公告)日：2022-02-22
申请号：US16775719
申请日：2020-01-29
申请人： Carl Zeiss SMT GmbH
发明人： Michael Budach , Ottmar Hoinkis
IPC分类号： G03F1/74 , G03F7/20 , H01J37/317 , H01J37/302 , H01J37/305 , G03F1/86 , H01J37/00 , H01J37/20 , H01J37/147
摘要： The present application relates to an apparatus for processing a photolithographic mask, said apparatus comprising: (a) at least one time-varying particle beam, which is embodied for a local deposition reaction and/or a local etching reaction on the photolithographic mask; (b) at least one first means for providing at least one precursor gas, wherein the precursor gas is embodied to interact with the particle beam during the local deposition reaction and/or the local etching reaction; and (c) at least one second means, which reduces a mean angle of incidence (φ) between the time-varying particle beam and a surface of the photolithographic mask.
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公开(公告)号：US11112703B2
公开(公告)日：2021-09-07
申请号：US16362025
申请日：2019-03-22
摘要： Disclosed is a method of, and associated apparatus for, determining an edge position relating to an edge of a feature comprised within an image, such as a scanning electron microscope image, which comprises noise. The method comprises determining a reference signal from said image; and determining said edge position with respect to said reference signal. The reference signal may be determined from the image by applying a 1-dimensional low-pass filter to the image in a direction parallel to an initial contour estimating the edge position.
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公开(公告)号：US10997345B2
公开(公告)日：2021-05-04
申请号：US16741735
申请日：2020-01-13
发明人： Ye Feng , Marcus Musselman , Andrew D. Bailey, III , Mehmet Derya Tetiker , Saravanapriyan Sriraman , Yan Zhang , Julien Mailfert
IPC分类号： G06F30/367 , G03F1/36 , G03F1/78 , G03F1/86 , G03F1/80
摘要： Computer-implemented methods of optimizing a process simulation model that predicts a result of a semiconductor device fabrication operation to process parameter values characterizing the semiconductor device fabrication operation are disclosed. The methods involve generating cost values using a computationally predicted result of the semiconductor device fabrication operation and a metrology result produced, at least in part, by performing the semiconductor device fabrication operation in a reaction chamber operating under a set of fixed process parameter values. The determination of the parameters of the process simulation model may employ pre-process profiles, via optimization of the resultant post-process profiles of the parameters against profile metrology results. Cost values for, e.g., optical scatterometry, scanning electron microscopy and transmission electron microscopy may be used to guide optimization.
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47.发明授权公开(公告)号：US10777377B2
公开(公告)日：2020-09-15
申请号：US15879120
申请日：2018-01-24
发明人： Robert Haynes , Frank Chilese , Moshe E. Preil
摘要： A multi-column assembly for a scanning electron microscopy (SEM) system is disclosed. The multi-column assembly includes a plurality of electron-optical columns arranged in an array defined by one or more spacings. Each electron-optical column includes one or more electron-optical elements. The plurality of electron-optical columns is configured to characterize one or more field areas on a surface of a sample secured on a stage. The number of electron-optical columns in the plurality of electron-optical columns equals an integer number of inspection areas in a field area of the one or more field areas. The one or more spacings of the plurality of electron-optical columns correspond to one or more dimensions of the inspection areas.
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公开(公告)号：US20200096862A1
公开(公告)日：2020-03-26
申请号：US16563763
申请日：2019-09-06
申请人： KLA Corporation
发明人： Vikram Tolani , Masaki Satake , Weston L. Sousa
IPC分类号： G03F1/86 , G01N21/33 , G01N23/2251 , G01N23/2255 , G03F1/74 , G03F1/22
摘要： Methods and systems for photomask defect dispositioning are provided. One method includes directing energy to a photomask and detecting energy from the photomask. The photornask is configured for use at one or more extreme ultraviolet wavelengths of light. The method also includes detecting defects on the photomask based on the detected energy. In addition, the method includes generating charged particle beam images of the photomask at locations of the detected defects. The method further includes dispositioning the detected defects based on the charged particle beam images generated for the detected defects.
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公开(公告)号：US10417756B2
公开(公告)日：2019-09-17
申请号：US15545067
申请日：2015-01-23
发明人： Kei Sakai , Satoru Yamaguchi , Kazuyuki Hirao , Yasunori Takasugi
摘要： The purpose of the present invention is to provide a pattern measurement apparatus that appropriately assesses patterns formed by patterning methods for forming patterns that do not exist on photomasks. In order to achieve this purpose, the present invention provides a pattern measurement apparatus comprising a processor that measures the dimensions of patterns formed on a sample by using data acquired by irradiating the sample with a beam, wherein the processor extracts pattern coordinate information on the basis of the data acquired by irradiating the sample with a beam, and uses the coordinate information to generate measurement reference data used when performing dimension measurements of the pattern.
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公开(公告)号：US10060947B2
公开(公告)日：2018-08-28
申请号：US14137731
申请日：2013-12-20
申请人： Carl Zeiss SMT GmbH
发明人： Michael Budach , Tristan Bret , Klaus Edinger , Thorsten Hofmann
摘要： The invention refers to a method for analyzing a defect of an optical element for the extreme ultra-violet wavelength range comprising at least one substrate and at least one multi-layer structure, the method comprising the steps: (a) determining first data by exposing the defect to ultra-violet radiation, (b) determining second data by scanning the defect with a scanning probe microscope, (c) determining third data by scanning the defect with a scanning particle microscope, and (d) com-bining the first, the second and the third data.
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