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公开(公告)号:US20190242704A1
公开(公告)日:2019-08-08
申请号:US15889891
申请日:2018-02-06
Applicant: STMICROELECTRONICS S.r.l.
Inventor: Marco LEO , Paolo ROSINGANA , Marco CASTELLANO
Abstract: A sensor includes an accelerometer, which, in operation, generates accelerometer data, and digital signal processing circuitry. The digital signal processing circuitry, in operation, generates, based on the generated accelerometer data, a value indicative of a cosine of an angle between an acceleration vector associated with current accelerometer data and a reference acceleration vector, compares the generated value indicative of the cosine of the angle between the vector associated with current accelerometer data and the reference acceleration vector with one or more thresholds and generates a tilt signal based on the comparison of the generated value indicative of the cosine of the angle between the vector associated with current accelerometer data and the reference acceleration vector with the one or more thresholds. The tilt signal may be used as an interrupt signal to an application processor.
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公开(公告)号:US20190238130A1
公开(公告)日:2019-08-01
申请号:US16261267
申请日:2019-01-29
Applicant: STMicroelectronics S.r.l.
Inventor: Edoardo Botti , Giovanni Gonano
IPC: H03K17/687 , H03F3/217
Abstract: A bi-directional switch circuit includes first and second transistors having their control electrodes coupled at a first common node and the current paths coupled at a second common node in an anti-series arrangement. First and second electrical paths coupled between the first common node and the first and second transistors, respectively, include first and second switches switchable between a conductive state and a non-conductive state. A third electrical path between the first and second common nodes includes a third switch switchable between a conductive state and a non-conductive state. The third switch is coupled with the first and second switches by a logical network configured to switch the third switch to the conductive state with the first and second switches switched to the non-conductive state, and to the non-conductive state with either one of the first and second switches switched to the conductive state.
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公开(公告)号:US20190238094A1
公开(公告)日:2019-08-01
申请号:US16261236
申请日:2019-01-29
Applicant: STMicroelectronics S.r.l.
Inventor: Edoardo Botti , Giovanni Gonano
Abstract: A switching circuit includes a switching circuit stage configured to supply a load via filter networks. Control circuitry is provided to control alternate switching sequences of transistors in the half-bridges of the switching circuit stage. A current flow line is provided between the output nodes of the half-bridges including an inductance between two switches. First and second capacitances are coupled with the output nodes of the half-bridges. The control circuitry switches first and second switches to the conductive state at intervals in the alternate switching sequences of the transistors in the half-bridges between switching the first pair of transistors to a non-conductive state and switching the second pair of transistors to a conductive state.
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公开(公告)号:US10364147B2
公开(公告)日:2019-07-30
申请号:US15687618
申请日:2017-08-28
Applicant: STMicroelectronics S.r.l.
Inventor: Marco Rossi , Sergio Mansueto Reina , Giacomo Calcaterra
Abstract: A probe card fits in a system for testing a micro-electro-mechanical device having an element sensitive to a magnetic field. The probe card is formed by a PCB having a through-opening and probe tips for electrically contacting the micro-electro-mechanical device. A housing structure is received within the through-opening. The housing structure includes a planar peripheral region surrounding seats that protrude and extend at least partly into the through-opening. Magnetic elements are arranged in the seats, with the magnetic elements configured to generate a test magnetic field for testing operation of the micro-electro-mechanical device.
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公开(公告)号:US10364143B2
公开(公告)日:2019-07-30
申请号:US14856707
申请日:2015-09-17
Applicant: STMICROELECTRONICS S.R.L.
Inventor: Alberto Pagani , Alessandro Motta
Abstract: An integrated micro-electromechanical device includes a first body of semiconductor material having a first face and a second face opposite the first surface, with the first body including a buried cavity forming a diaphragm delimited between the buried cavity and the first face. The diaphragm is monolithic with the first body. At least one first magnetic via extends between the second face and the buried cavity of the first body. A first magnetic region extends over the first face of the first body. A first coil extends over the second face of the first body and is magnetically coupled to the first magnetic via.
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576.
公开(公告)号:US20190221678A1
公开(公告)日:2019-07-18
申请号:US16246945
申请日:2019-01-14
Applicant: STMicroelectronics S.r.l.
Inventor: Flavio Francesco VILLA , Marco MORELLI , Marco MARCHESI , Simone Dario MARIANI , Fabrizio Fausto Renzo TOIA
CPC classification number: H01L29/945 , H01L21/02639 , H01L21/0265 , H01L27/0629 , H01L28/60 , H01L29/66181
Abstract: A semiconductor body includes a front side and a back side and is configured to support an electronic circuit. A buried region is provided in the semiconductor body at a location between the electronic circuit and the back side. The buried region includes a layer of conductive material and a dielectric layer, where the dielectric layer is arranged between the layer of conductive material and the semiconductor body. A conductive path extends between the buried region and the front side to form a path for electrical access to the layer of conductive material. A capacitor is thus formed with the layer of conductive material providing a capacitor plate and the dielectric layer providing the capacitor dielectric. A further capacitor plate is provided by the semiconductor body, or by a further layer of conductive material in the buried region.
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577.
公开(公告)号:US20190219642A1
公开(公告)日:2019-07-18
申请号:US16367109
申请日:2019-03-27
Applicant: STMICROELECTRONICS S.R.L.
Inventor: Dario PACI
CPC classification number: G01R33/0011 , G01R33/0052 , G01R33/093 , G01R33/096 , H01L43/08 , H01L43/12
Abstract: An AMR-type integrated magnetoresistive sensor sensitive to perpendicular magnetic fields is formed on a body of semiconductor material covered by an insulating region. The insulating region houses a set/reset coil and a magnetoresistor arranged on the set/reset coil. The magnetoresistor is formed by a magnetoresistive strip of an elongated shape parallel to the preferential magnetization direction. A concentrator of ferromagnetic material is arranged on top of the insulating region as the last element of the sensor and is formed by a plurality of distinct ferromagnetic regions aligned parallel to the preferential magnetization direction.
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578.
公开(公告)号:US20190219468A1
公开(公告)日:2019-07-18
申请号:US16248415
申请日:2019-01-15
Applicant: STMicroelectronics S.r.l.
Inventor: Enri Duqi , Lorenzo Baldo
CPC classification number: G01L27/002 , G01L9/0054 , G01L27/007
Abstract: A microelectromechanical pressure sensor includes a monolithic body of semiconductor material having a front surface. A sensing structure is integrated in the monolithic body and has a buried cavity completely contained within the monolithic body at the front surface. A sensing membrane is suspended above the buried cavity and is formed by a surface portion of the monolithic body. Sensing elements of a piezoresistive type are arranged in the sensing membrane to detect a deformation of the sensing membrane as a result of a pressure. The pressure sensor is further provided with a self-test structure integrated within the monolithic body to cause application of a testing deformation of the sensing membrane in order to verify proper operation of the sensing structure.
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579.
公开(公告)号:US20190218092A1
公开(公告)日:2019-07-18
申请号:US16361739
申请日:2019-03-22
Applicant: STMicroelectronics S.r.l.
Inventor: Alberto Pagani
IPC: B81B3/00 , G01C19/5776
CPC classification number: B81B3/0021 , G01C19/5776 , H02K35/02
Abstract: A magnetic energy harvesting and scavenging circuit includes a first substrate having first and second surfaces and at least one energy harvesting and scavenging coil formed adjacent the first surface. An electromechanical systems device includes a moveable mass extending over the first surface and is displaced relative to the first substrate in three dimensions responsive to an external force applied to the moveable mass. The movable mass includes a magnet support layer and a number of permanent magnet segments attached to the magnet support layer. The permanent magnet segments are magnetically coupled to the at least one energy harvesting and scavenging coil. Energy harvesting and scavenging circuitry is electrically coupled to the at least one energy harvesting and scavenging coil and generates electrical energy due to magnetic flux variation through the at least one energy harvesting and scavenging coil responsive to movement of the moveable mass.
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公开(公告)号:US20190217611A1
公开(公告)日:2019-07-18
申请号:US16357077
申请日:2019-03-18
Applicant: STMICROELECTRONICS, INC. , STMICROELECTRONICS INTERNATIONAL N.V. , STMICROELECTRONICS S.R.L.
Inventor: Simon DODD , David S. HUNT , Joseph Edward SCHEFFELIN , Dana GRUENBACHER , Stefan H. HOLLINGER , Uwe SCHOBER , Peter JANOUCH
CPC classification number: B41J2/1433 , B41J2/14072 , B41J2/14201 , B41J2/1753 , B41J2/17553 , B41J2002/14362 , B41J2002/14491
Abstract: The present disclosure provides supports for microfluidic die that allow for nozzles of the microfluidic die to be on a different plane or face a different direction from electrical contacts on the same support. This includes a rigid support having electrical contacts on a different side of the rigid support with respect to a direction of ejection of the nozzles, and a semi-flexible support or semi-rigid support that allow the electrical contacts to be moved with respect to a direction of ejection of the nozzles. The semi-flexible and semi-rigid supports allow the die to be up to and beyond a 90 degree angle with respect to a plane of the electrical contacts. The different supports allow for a variety of positions of the microfluidic die with respect to a position of the electrical contacts.
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