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    SEPARATION OF OLEFINS FROM OLEFINS/PARAFFINS MIXED GAS
    581.
    发明申请
    SEPARATION OF OLEFINS FROM OLEFINS/PARAFFINS MIXED GAS 有权
    来自烯烃/分散体混合气体的烯烃的分离

    公开(公告)号：US20100048971A1

    公开(公告)日：2010-02-25

    申请号：US12593249

    申请日：2008-03-28

    Applicant: Jong-Nam Kim ,  Jong-Ho Park ,  Seong-Jun Lee ,  Min-Su Ko ,  Hee Tae Beum ,  Jongkee Park ,  Chang Hyun Ko ,  Sang Sup Han ,  Soon-Haeng Cho

    Inventor： Jong-Nam Kim ,  Jong-Ho Park ,  Seong-Jun Lee ,  Min-Su Ko ,  Hee Tae Beum ,  Jongkee Park ,  Chang Hyun Ko ,  Sang Sup Han ,  Soon-Haeng Cho

    IPC: C07C7/04 ,  C07C7/11

    CPC classification number: B01D53/047 ,  B01D2256/24 ,  B01D2257/7022 ,  B01D2259/40054 ,  B01D2259/4006 ,  B01D2259/40062 ,  B01D2259/40067 ,  B01D2259/403 ,  C07C7/13 ,  C07C11/08

    Abstract: The present invention relates to a method and an apparatus for the separation of C4 olefins (butene-1, trans-2-butene, cis-2-butene, etc.) and C4 paraffins (normal butane, isobutane, etc.) from a C4 hydrocarbon mixed gas including butene-1, trans-2-butene, cis-2-butene, normal butane, isobutane, etc. The method of the present invention produces C4 olefins with high purity by introducing a gaseous C4 mixture into the adsorption tower loaded with adsorbent selectively adsorbing olefins to adsorb C4 olefins and to discharge C4 paraffins to the outlet of the tower, desorbing C4 olefins adsorbed on the adsorption tower with a desorbent (C5 hydrocarbon, C6 hydrocarbon, etc.), and then separating the C4 olefin and the desorbent by a distillation process. The apparatus of the present invention is composed of several adsorption towers loaded with an adsorbent which selectively adsorb olefins and two distillation towers for the separation of the mixture gases of olefins/desorbents and paraffins/desorbents respectively, The basic operating process of the adsorption tower comprises a adsorption step of selectively adsorbing C4 olefin from the feeding mixture, a C4 olefin rinse step of removing a small amount of C4 paraffins adsorbed together with C4 olefins, and a desorption step of desorbing C4 olefins by using a desorbent, and further comprises a pressure equalization step, a cocurrent depressurization step, and a accumulation pressure step in order to increase the yield and concentration of olefins depending on the operation pressure of the adsorption tower. The desorbent discharged from the process together with olefins or paraffins is separated in the distillation tower and then recycled.

    Abstract translation: 本发明涉及一种用于分离C4烯烃（丁烯-1，反式-2-丁烯，顺-2-丁烯等）和C4链烷烃（正丁烷，异丁烷等）的方法和装置， 包括丁烯-1，反式-2-丁烯，顺式-2-丁烯，正丁烷，异丁烷等的C4烃混合气体。本发明的方法通过将气态C 4混合物引入吸附塔中来生产高纯度的C4烯烃 负载吸附剂选择性吸附烯烃以吸附C4烯烃并将C4链烷烃排出到塔的出口，用解吸剂（C5烃，C6烃等）解吸吸附在吸附塔上的C4烯烃，然后分离C4烯烃 和通过蒸馏方法的解吸剂。 本发明的装置由多个吸附塔组成，吸附塔分别选择性地吸附烯烃和两个蒸馏塔，用于分离烯烃/脱附剂和石蜡/脱附剂的混合气体。吸附塔的基本操作过程包括 从进料混合物中选择性吸附C4烯烃的吸附步骤，除去少量与C4烯烃一起吸附的C4链烷烃的C4烯烃漂洗步骤，以及通过使用脱附剂解吸C4烯烃的解吸步骤，还包括压力 平衡步骤，并流减压步骤和累积压力步骤，以根据吸附塔的操作压力提高烯烃的产率和浓度。 从该方法中排出的解吸剂与烯烃或链烷烃一起在蒸馏塔中分离，然后再循环。

    DISPLAY APPARATUS
    584.
    发明申请
    DISPLAY APPARATUS 失效
    显示设备

    公开(公告)号：US20100001940A1

    公开(公告)日：2010-01-07

    申请号：US12325475

    申请日：2008-12-01

    Applicant: Jun-Pyo Lee ,  Jung-Won Kim ,  Byoung-Jun Lee

    Inventor： Jun-Pyo Lee ,  Jung-Won Kim ,  Byoung-Jun Lee

    IPC: G09G3/36

    CPC classification number: G09G3/3659 ,  G02F1/133707 ,  G02F1/136213 ,  G09G2300/0443 ,  G09G2300/0447 ,  G09G2300/0876 ,  G09G2310/06 ,  G09G2320/028

    Abstract: A display apparatus includes a plurality of pixels. Each pixel includes a main pixel, a sub-pixel, and a boosting capacitor. The main pixel receives a data signal in response to a first gate signal and is charged with a main pixel voltage. The sub-pixel receives the data signal in response to a second gate signal, and is charged with a sub-pixel voltage. The boosting capacitor is provided between the main pixel and the sub-pixel to increase the main pixel voltage when the sub-pixel is charged with the sub-pixel voltage in response to the second gate signal.

    Abstract translation: 显示装置包括多个像素。 每个像素包括主像素，子像素和升压电容器。 主像素响应于第一栅极信号接收数据信号并且以主像素电压进行充电。 子像素响应于第二栅极信号接收数据信号，并且以子像素电压进行充电。 升压电容器设置在主像素和子像素之间，以响应于第二栅极信号而在子像素被子像素电压充电时增加主像素电压。

    RECHARGEABLE LITHIUM BATTERY
    585.
    发明申请
    RECHARGEABLE LITHIUM BATTERY 审中-公开
    可充电锂电池

    公开(公告)号：US20090325072A1

    公开(公告)日：2009-12-31

    申请号：US12492070

    申请日：2009-06-25

    Applicant: Hideaki Maeda ,  Tetsuo Tokita ,  Jea-Woan Lee ,  Joon-Sup Kim ,  Young-Jun Lee ,  Wan-Uk Choi

    Inventor： Hideaki Maeda ,  Tetsuo Tokita ,  Jea-Woan Lee ,  Joon-Sup Kim ,  Young-Jun Lee ,  Wan-Uk Choi

    IPC: H01M4/58 ,  H01M4/52 ,  H01M4/38 ,  H01M4/50

    CPC classification number: H01M10/052 ,  H01M4/364 ,  H01M4/485 ,  H01M4/525 ,  H01M4/58 ,  H01M4/5815 ,  H01M4/5825

    Abstract: A rechargeable lithium battery according to embodiments of the present invention includes a positive electrode, a negative electrode, and a non-aqueous electrolyte. The positive electrode includes a first layered lithium compound having an open circuit potential (based on lithium) of 3 V or greater, and a second layered lithium compound having an open circuit potential of less than 3 V. The second layered lithium compound is included in an amount of from about 0.99 to about 30 wt % based on a total amount of the first layered lithium compound and the second layered lithium compound.

    Abstract translation: 根据本发明的实施方式的可再充电锂电池包括正极，负极和非水电解质。 正极包括具有3V以上的开路电位（基于锂）的第一层状锂化合物和具有小于3V的开路电位的第二层状锂化合物。第二层状锂化合物包括在 相对于第一层状锂化合物和第二层状锂化合物的总量，为约0.99〜约30重量％。

    DUTY CYCLE CORRECTION CIRCUIT OF SEMICONDUCTOR MEMORY APPARATUS
    586.
    发明申请
    DUTY CYCLE CORRECTION CIRCUIT OF SEMICONDUCTOR MEMORY APPARATUS 有权
    半导体存储器的占空比校正电路

    公开(公告)号：US20090302912A1

    公开(公告)日：2009-12-10

    申请号：US12346683

    申请日：2008-12-30

    Applicant: Seong Jun Lee

    Inventor： Seong Jun Lee

    IPC: H03K3/017

    CPC classification number: H03K5/1565 ,  G11C7/22 ,  G11C7/222

    Abstract: A duty cycle correction circuit of a semiconductor memory apparatus includes a duty ratio correcting unit configured to correct a duty ratio of a clock signal according to levels of a first reference voltage and a second reference voltage, and to output the clock signal as a correction clock signal, a duty ratio detecting unit configured to count first and second counting signals in response to a duty ratio of the correction clock signal when a pump enable signal is enabled, a pump enable signal generating unit configured to generate the pump enable signal in response to the duty ratio of the correction clock signal, and a reference voltage generating unit configured to generate the first and second reference voltages in response to the first and second counting signals.

    Abstract translation: 半导体存储装置的占空比校正电路包括占空比校正单元，其被配置为根据第一参考电压和第二参考电压的电平来校正时钟信号的占空比，并将时钟信号作为校正时钟输出 信号，占空比检测单元，被配置为当启用泵使能信号时响应于所述校正时钟信号的占空比来对第一和第二计数信号进行计数;泵使能信号生成单元，被配置为响应于 校正时钟信号的占空比，以及被配置为响应于第一和第二计数信号而产生第一和第二参考电压的参考电压产生单元。

    Liquid crystal display having a defect repair mechanism interposed between a light shielding storage line and a light shielding output electrode
    587.
    发明授权
    Liquid crystal display having a defect repair mechanism interposed between a light shielding storage line and a light shielding output electrode 失效
    液晶显示器具有介于遮光存储线和遮光输出电极之间的缺陷修复机构

    公开(公告)号：US07612863B2

    公开(公告)日：2009-11-03

    申请号：US11744457

    申请日：2007-05-04

    Applicant: Beom-Jun Kim ,  Jong-Hwan Lee ,  Sang-Jin Jeon ,  Sung-Man Kim ,  Bong-Jun Lee ,  Hong-Woo Lee

    Inventor： Beom-Jun Kim ,  Jong-Hwan Lee ,  Sang-Jin Jeon ,  Sung-Man Kim ,  Bong-Jun Lee ,  Hong-Woo Lee

    IPC: G02F1/13 ,  G02F1/1343 ,  G02F1/1333 ,  G02F1/136

    CPC classification number: G02F1/136213 ,  G02F1/136259 ,  G02F1/136286

    Abstract: A liquid crystal display that is subject to pixel-high defects due to manufacturing anomalies is provided with programmable repair means for each pixel electrode. In one embodiment, a transistor-array substrate is provided with plural gate lines that are separated from each other by a first interval, plural data lines that are insulated from the gate lines while crossing the gate lines, and separated from each other by a second interval larger than the first interval, thereby defining plural pixel areas. Each pixel area has a corresponding pixel unit comprising a switching device, pixel electrode, and repair electrode. The repair electrode branches from a neighboring gate line and extends such that the repair electrode is in overlapping spaced-apart relation with the pixel electrode and selectively connectable to the pixel electrode. Accordingly, a pixel where a high pixel defect occurs can be repaired by selective connection with the repair electrode, thereby improving display quality of the liquid crystal display.

    Abstract translation: 由于制造异常而受到像素高缺陷的液晶显示器，为每个像素电极提供可编程修复装置。 在一个实施例中，晶体管阵列基板设置有多个栅极线，它们彼此分开第一间隔，多条数据线在与栅极线交叉时与栅极线绝缘并且彼此分开第二个 间隔大于第一间隔，从而限定多个像素区域。 每个像素区域具有包括开关器件，像素电极和修复电极的对应像素单元。 修复电极从相邻的栅极线分支并延伸，使得修复电极与像素电极重叠间隔开，并且可选择性地连接到像素电极。 因此，可以通过与修复电极的选择性连接来修复发生高像素缺陷的像素，从而提高液晶显示器的显示质量。

    Multi-functional cyclic siloxane compound and process for preparing dielectric film by using siloxane-based polymer prepared from the compound
    588.
    发明申请
    Multi-functional cyclic siloxane compound and process for preparing dielectric film by using siloxane-based polymer prepared from the compound 有权
    多功能环状硅氧烷化合物以及使用由该化合物制备的硅氧烷类聚合物制备电介质膜的方法

    公开(公告)号：US20090269942A1

    公开(公告)日：2009-10-29

    申请号：US12458009

    申请日：2009-06-29

    Applicant: Hyeon Jin Shin ,  Hyun Dam Jeong ,  Jong Baek Seon ,  Sang Kook Mah ,  Jin Heong Yim ,  Jae Jun Lee ,  Kwang Hee Lee ,  Jung Bae Kim

    Inventor： Hyeon Jin Shin ,  Hyun Dam Jeong ,  Jong Baek Seon ,  Sang Kook Mah ,  Jin Heong Yim ,  Jae Jun Lee ,  Kwang Hee Lee ,  Jung Bae Kim

    IPC: H01L21/312 ,  C07F7/21

    CPC classification number: C07F7/21 ,  Y10T428/31663

    Abstract: A multi-functional cyclic siloxane compound (A), a siloxane-based (co)polymer prepared from the compound (A), or compound (A) and at least one of a Si monomer having organic bridges (B), an acyclic alkoxy silane monomer (C), and a linear siloxane monomer (D); and a process for preparing a dielectric film using the polymer. The siloxane compound of the present invention is highly reactive, so the polymer prepared from the compound is excellent in mechanical properties, thermal stability and crack resistance, and has a low dielectric constant resulting from compatibility with conventional pore-generating materials. Furthermore, a low content of carbon and high content of SiO2 enhance its applicability to the process of producing a semiconductor, wherein it finds great use as a dielectric film.

    Abstract translation: 多官能环状硅氧烷化合物（A），由化合物（A）或化合物（A）制备的硅氧烷类（共）聚合物和至少一种具有有机桥（B）的Si单体，无环烷氧基 硅烷单体（C）和直链硅氧烷单体（D）; 以及使用该聚合物制备电介质膜的方法。 本发明的硅氧烷化合物具有高反应性，因此由该化合物制备的聚合物的机械性能，热稳定性和抗裂性优异，并且由于与常规孔产生材料的相容性而具有低的介电常数。 此外，低含量的碳和高含量的SiO 2增强了其在制造半导体的过程中的适用性，其中它被广泛用作电介质膜。

    Method of manufacturing non-volatile memory device
    589.
    发明授权
    Method of manufacturing non-volatile memory device 失效
    制造非易失性存储器件的方法

    公开(公告)号：US07608505B2

    公开(公告)日：2009-10-27

    申请号：US11643880

    申请日：2006-12-22

    Applicant: Yong Jun Lee

    Inventor： Yong Jun Lee

    IPC: H01L21/8247

    CPC classification number: H01L21/28282 ,  H01L29/4234 ,  H01L29/792

    Abstract: A method of manufacturing a non-volatile memory device includes the steps of: defining an active region on a semiconductor substrate; forming a charge storage layer on the active region; forming a first conductive pattern on the charge storage layer, wherein the first conductive pattern has a bottom portion larger in width than a top portion thereof, the first conductive pattern further having a sloping sidewall connecting the top and bottom portions; forming an oxide layer on the sidewall of the first conductive pattern; forming a conformal second conductive layer on the first conductive pattern and on the active region around the first conductive pattern; and patterning the first conductive pattern and the second conductive layer to form a pair of first electrodes and a pair of second electrodes, respectively.

    Abstract translation: 制造非易失性存储器件的方法包括以下步骤：在半导体衬底上限定有源区; 在有源区上形成电荷存储层; 在所述电荷存储层上形成第一导电图案，其中所述第一导电图案具有宽度大于其顶部的底部，所述第一导电图案还具有连接所述顶部和底部的倾斜侧壁; 在第一导电图案的侧壁上形成氧化物层; 在所述第一导电图案上以及围绕所述第一导电图案的所述有源区上形成保形第二导电层; 以及图案化所述第一导电图案和所述第二导电层，以分别形成一对第一电极和一对第二电极。

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