Method of de-interleaving interleaved data samples sequences, and associated system
    51.
    发明授权
    Method of de-interleaving interleaved data samples sequences, and associated system 有权
    交织数据样本序列的解交织方法和相关系统

    公开(公告)号:US07506220B2

    公开(公告)日:2009-03-17

    申请号:US11007114

    申请日:2004-12-08

    CPC classification number: H03M13/6505 H03M13/2703 H03M13/2792 H03M13/2796

    Abstract: A method for de-interleaving S2 received sequences of interleaved received data samples respectively issued from S2 physical channels and to be associated with S1 output transport channels is provided. The S2 received sequences have been delivered, before transmission by a two-stage multi-interleaving device, from S1 initial sequences of ordered data samples respectively associated to S1 initial transport channels. The two-stage multi-interleaving device includes a first stage including S1 interleaving blocks respectively associated to the S1 initial transport channels, a second stage including S2 interleaving blocks respectively associated to the S2 physical channels, and an inter-stage of predetermined data-routing functions connected between the first and second stages.

    Abstract translation: 提供了从S2物理信道分别发出并与S1输出传输信道相关联的用于去交织S2接收的交错接收数据样本序列的方法。 S2接收的序列在由两级多重交织装置发送之前已经从分别与S1个初始传输信道相关联的有序数据样本的S1个初始序列传送。 两级多交织装置包括:第一级,包括分别与S1初始传输信道相关联的S1交织块;第二级包括分别与S2物理信道相关联的S2交织块;以及预定数据路由 连接在第一和第二阶段之间的功能。

    Method and device for handling write access conflicts in interleaving for high throughput turbo-decoding
    52.
    发明授权
    Method and device for handling write access conflicts in interleaving for high throughput turbo-decoding 有权
    用于处理用于高吞吐量turbo解码的交织中的写入访问冲突的方法和装置

    公开(公告)号:US07502990B2

    公开(公告)日:2009-03-10

    申请号:US11037504

    申请日:2005-01-18

    CPC classification number: H03M13/6566 H03M13/2771 H03M13/2957 H03M13/3972

    Abstract: A device for processing data to be interleaved and stored in target memories includes N interleaving buffers, N producers, and N cells. Each cell includes a register bank of size W, and a delay circuit. The variable M defines a maximum number of concurrent write operations supported per time step W, and defines a maximum buffer size. These parameters are chosen to reflect a standard case. At any time step, each of the N interleaving buffers receives m log-likelihood ratio (LLR) inputs and writes up to M of these into the register banks. When m is larger than M, m-M producers are delayed by the delay circuit. When a buffer overflow occurs (more than W LLRs values), m producers are delayed by the delay circuit. One LLR value is fetched from the register bank and is written in an SRAM interleaving memory.

    Abstract translation: 用于处理要被交织并存储在目标存储器中的数据的装置包括N个交织缓冲器,N个生成器和N个单元。 每个单元包括大小为W的寄存器组和延迟电路。 变量M定义每个时间步长W支持的最大并发写操作数,并定义最大缓冲区大小。 选择这些参数以反映标准情况。 在任何时间步长中,N个交织缓冲器中的每一个接收到m个对数似然比(LLR)输入,并将这些输入写入到寄存器组中。 当m大于M时,m-M生成器被延迟电路延迟。 当缓冲区溢出发生(超过W LLR值)时,m个生成器被延迟电路延迟。 从寄存器组中提取一个LLR值,并写入SRAM交错存储器。

    METHOD OF MANAGING THE OPERATION OF A WIRELESS COMMUNICATION DEVICE AND CORRESPONDING WIRELESS DEVICE
    54.
    发明申请
    METHOD OF MANAGING THE OPERATION OF A WIRELESS COMMUNICATION DEVICE AND CORRESPONDING WIRELESS DEVICE 有权
    管理无线通信设备和相关无线设备的操作方法

    公开(公告)号:US20080240271A1

    公开(公告)日:2008-10-02

    申请号:US12018467

    申请日:2008-01-23

    Inventor: Friedbert BERENS

    CPC classification number: H04B1/719

    Abstract: The method is for managing the operation of a wireless communication device including several different communication modules respectively adapted to operate according to several given communication protocols including a UWB module operating according to a UWB protocol based on an OFDM modulation scheme. The method includes controlling the UWB module for scanning a chosen frequency band, and managing a communication to be performed by the device on the basis of the scanning result.

    Abstract translation: 该方法用于管理包括几个不同通信模块的无线通信设备的操作,所述无线通信模块分别适于根据若干给定的通信协议进行操作,所述通信协议包括基于OFDM调制方案的根据UWB协议操作的UWB模块。 该方法包括:控制UWB模块扫描选定的频带,并根据扫描结果管理由设备执行的通信。

    Method for the production of image sensors
    56.
    发明授权
    Method for the production of image sensors 有权
    图像传感器的制作方法

    公开(公告)号:US07259364B2

    公开(公告)日:2007-08-21

    申请号:US10497668

    申请日:2002-12-04

    Applicant: Tarek Lulé

    Inventor: Tarek Lulé

    Abstract: The invention relates to a method for producing image sensors on the basis of TFA technology including of an amorphous thin-layer system that has been applied on a crystalline ASIC. The inventive method enables the production of image sensors on the basis of TFA technology, which improve the picture quality at low luminous intensity by reducing the dark currents. The photodiodes in the thin-layer material that are configured as pixels are linked with transistor structures in the crystalline ASIC via back electrodes. The transistor structures have particularly low leakage currents due to implantation technology or optimization of the production process.

    Abstract translation: 本发明涉及一种基于TFA技术制造图像传感器的方法,其包括已经施加在结晶ASIC上的非晶薄层系统。 本发明的方法使得能够基于TFA技术生产图像传感器,其通过减少暗电流来改善低发光强度下的图像质量。 配置为像素的薄层材料中的光电二极管通过背电极与晶体ASIC中的晶体管结构相连。 由于注入技术或生产过程的优化,晶体管结构具有特别低的漏电流。

    METHOD AND DEVICE FOR NOTCHING THE TRANSMISSION BAND OF AN ANALOG SIGNAL, IN PARTICULAR AN MB-OFDM SIGNAL
    57.
    发明申请
    METHOD AND DEVICE FOR NOTCHING THE TRANSMISSION BAND OF AN ANALOG SIGNAL, IN PARTICULAR AN MB-OFDM SIGNAL 有权
    用于禁止模拟信号的传输带,特别是MB-OFDM信号的方法和装置

    公开(公告)号:US20070147524A1

    公开(公告)日:2007-06-28

    申请号:US11612846

    申请日:2006-12-19

    CPC classification number: H04L27/2626 H04B1/719 H04L25/03343 H04L27/2607

    Abstract: The transmission band of an analog signal to be transmitted is notched, including sub-carriers to be modulated from digital modulation coefficients respectively associated with the sub-carriers. The method includes providing an initial digital signal from successive frequency-domain groups each containing the digital modulation coefficients respectively associated to the sub-carriers. The initial signal is filtered with a frequency resolution greater than the frequency resolution of the frequency-domain groups to remove frequencies corresponding to the sub-carriers to be removed. The filtered signal is windowed using a windowing mask having a representation in the frequency-domain including a main lobe and secondary lobes. The power spectrum of the lobes decrease faster than the inverse of the frequency squared.

    Abstract translation: 要发送的模拟信号的发送频带被切断,包括要从分别与子载波相关联的数字调制系数调制的子载波。 该方法包括提供来自连续频域组的初始数字信号,每个包含分别与子载波相关联的数字调制系数。 以大于频域组的频率分辨率的频率分辨率对初始信号进行滤波,以去除与要移除的子载波相对应的频率。 使用具有在包括主瓣和副瓣的频域中的表示的加窗掩模来对经滤波的信号进行加窗。 波瓣的功率谱比频率平方的反比降低得更快。

    Optoelectronic component for converting electromagnetic radiation into a intensity-dependent photocurrent
    59.
    发明申请
    Optoelectronic component for converting electromagnetic radiation into a intensity-dependent photocurrent 审中-公开
    用于将电磁辐射转换为强度依赖光电流的光电元件

    公开(公告)号:US20060223214A1

    公开(公告)日:2006-10-05

    申请号:US11437499

    申请日:2006-05-19

    Abstract: Optoelectronic component for converting electromagnetic radiation into an intensity-dependent photocurrent comprising a substrate formed in CMOS technology, in particular, with an integrated semiconductor structure (ASIC) and an optically active thin-film structure arranged upstream in the direction of light incidence and comprising in each case at least one layer made of doped and at least one layer made of undoped semiconductor material, which is connected to a microelectronic circuit arranged on the substrate by means of an insulating layer, within which are situated connecting means for contact-connecting the optically active thin-film structure to the semiconductor structure. The invention is based on the object of providing an optoelectronic component, and a method for fabricating it, which, on the one hand, can be fabricated more simply and, on the other hand, has a reduced dark current. This object is achieved according to the invention by virtue of the fact that the optically active thin-film structure has a layer sequence made of a metal and an intrinsically conducting amorphous or microcrystalline semiconductor material, in particular silicon and alloys thereof, which is applied directly to the planarized insulating layer.

    Abstract translation: 用于将电磁辐射转换成包含在CMOS技术中形成的衬底的强度依赖性光电流的光电子部件,特别是具有集成半导体结构(ASIC)和在光入射方向上游设置的光学活性薄膜结构, 每个壳体由至少一层由掺杂的和至少一层由未掺杂的半导体材料制成的层构成,该层由绝缘层连接到布置在衬底上的微电子电路,其中位于用于将光学器件接触连接的连接装置 有源薄膜结构到半导体结构。 本发明基于提供光电子部件的目的及其制造方法,一方面可以更简单地制造,另一方面,具有减小的暗电流。 根据本发明,根据本发明实现了该目的,该光学活性薄膜结构具有由金属和本体导电的非晶或微晶半导体材料,特别是其及其合金制成的层序列,其直接应用 到平坦化绝缘层。

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