公开(公告)号：US20060223214A1

公开(公告)日：2006-10-05

申请号：US11437499

申请日：2006-05-19

申请人： Peter Rieve ,  Konstantin Seibel ,  Michael Wagner ,  Jens Prima ,  Marcus Walder

发明人： Peter Rieve ,  Konstantin Seibel ,  Michael Wagner ,  Jens Prima ,  Marcus Walder

IPC分类号： H01L21/00

CPC分类号： H01L27/14636 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14692 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/108 ,  Y02E10/545 ,  Y02E10/548

摘要： Optoelectronic component for converting electromagnetic radiation into an intensity-dependent photocurrent comprising a substrate formed in CMOS technology, in particular, with an integrated semiconductor structure (ASIC) and an optically active thin-film structure arranged upstream in the direction of light incidence and comprising in each case at least one layer made of doped and at least one layer made of undoped semiconductor material, which is connected to a microelectronic circuit arranged on the substrate by means of an insulating layer, within which are situated connecting means for contact-connecting the optically active thin-film structure to the semiconductor structure. The invention is based on the object of providing an optoelectronic component, and a method for fabricating it, which, on the one hand, can be fabricated more simply and, on the other hand, has a reduced dark current. This object is achieved according to the invention by virtue of the fact that the optically active thin-film structure has a layer sequence made of a metal and an intrinsically conducting amorphous or microcrystalline semiconductor material, in particular silicon and alloys thereof, which is applied directly to the planarized insulating layer.

摘要翻译： 用于将电磁辐射转换成包含在CMOS技术中形成的衬底的强度依赖性光电流的光电子部件，特别是具有集成半导体结构（ASIC）和在光入射方向上游设置的光学活性薄膜结构， 每个壳体由至少一层由掺杂的和至少一层由未掺杂的半导体材料制成的层构成，该层由绝缘层连接到布置在衬底上的微电子电路，其中位于用于将光学器件接触连接的连接装置 有源薄膜结构到半导体结构。 本发明基于提供光电子部件的目的及其制造方法，一方面可以更简单地制造，另一方面，具有减小的暗电流。 根据本发明，根据本发明实现了该目的，该光学活性薄膜结构具有由金属和本体导电的非晶或微晶半导体材料，特别是其及其合金制成的层序列，其直接应用 到平坦化绝缘层。

公开(公告)号：US20050042794A1

公开(公告)日：2005-02-24

申请号：US10943448

申请日：2004-09-17

申请人： Peter Rieve ,  Konstantin Seibel ,  Michael Wagner ,  Jens Prima ,  Marcus Walder

发明人： Peter Rieve ,  Konstantin Seibel ,  Michael Wagner ,  Jens Prima ,  Marcus Walder

IPC分类号： H01L27/146 ,  H01L31/0368 ,  H01L31/0376 ,  H01L31/108 ,  H01L21/00

CPC分类号： H01L27/14636 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14692 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/108 ,  Y02E10/545 ,  Y02E10/548

摘要： Optoelectronic component for converting electromagnetic radiation into an intensity-dependent photocurrent comprising a substrate formed in CMOS technology, in particular, with an integrated semiconductor structure (ASIC) and an optically active thin-film structure arranged upstream in the direction of light incidence and comprising in each case at least one layer made of doped and at least one layer made of undoped semiconductor material, which is connected to a microelectronic circuit arranged on the substrate by means of an insulating layer, within which are situated connecting means for contact-connecting the optically active thin-film structure to the semiconductor structure. The invention is based on the object of providing an optoelectronic component, and a method for fabricating it, which, on the one hand, can be fabricated more simply and, on the other hand, has a reduced dark current. This object is achieved according to the invention by virtue of the fact that the optically active thin-film structure has a layer sequence made of a metal and an intrinsically conducting amorphous or microcrystalline semiconductor material, in particular silicon and alloys thereof, which is applied directly to the planarized insulating layer.

摘要翻译： 用于将电磁辐射转换成包含在CMOS技术中形成的衬底的强度依赖性光电流的光电子部件，特别是具有集成半导体结构（ASIC）和在光入射方向上游设置的光学活性薄膜结构， 每个壳体由至少一层由掺杂的和至少一层由未掺杂的半导体材料制成的层构成，该层由绝缘层连接到布置在衬底上的微电子电路，其中位于用于将光学器件接触连接的连接装置 有源薄膜结构到半导体结构。 本发明基于提供光电子部件的目的及其制造方法，一方面可以更简单地制造，另一方面，具有减小的暗电流。 根据本发明，根据本发明实现了该目的，该光学活性薄膜结构具有由金属和本体导电的非晶或微晶半导体材料，特别是其及其合金制成的层序列，其直接应用 到平坦化绝缘层。

公开(公告)号：US20060249762A1

公开(公告)日：2006-11-09

申请号：US10477913

申请日：2002-05-15

申请人： Peter Rieve ,  Marcus Walder ,  Konstantin Seibel ,  Jens Prima ,  Reinhard Ronneberger ,  Markus Scholz ,  Tarek Lulé

发明人： Peter Rieve ,  Marcus Walder ,  Konstantin Seibel ,  Jens Prima ,  Reinhard Ronneberger ,  Markus Scholz ,  Tarek Lulé

IPC分类号： H01L31/113

CPC分类号： H01L27/14636 ,  H01L27/14603 ,  H01L27/14632 ,  H01L27/14643 ,  H01L31/02164 ,  H01L31/0224 ,  H01L31/03762

摘要： The invention relates to an optoelectronic component for converting electromagnetic radiation into an intensity-dependent photoelectric current. The component consists of includes one substrate which is formed especially according to CMOS technology. The substrate has an integrated semiconductor structure and an optically active thin layer structure which is situated upstream in the direction of light incidence. The structure consists of includes a layer of a transparent conductive material and at least one layer of semiconductor material, which are arranged on an isolating layer, inside which connection means are provided for establishing a connection between the optically active thin layer structure and the integrated semiconductor structure arranged on the substrate. The aim of the invention is to develop one such optoelectronic component in such a way that the electrical connection between the layer of transparent conductive material and an electrical potential connection can be established in a technically simple manner. To this end, the layer of transparent conductive material can be connected to the potential connection arranged outside the pixel arrangement by means of an additional conductive structure formed on the substrate.

摘要翻译： 本发明涉及一种用于将电磁辐射转换为强度依赖光电流的光电子部件。 该组件包括一个特别根据CMOS技术形成的衬底。 衬底具有集成的半导体结构和位于光入射方向上游的光学活性薄层结构。 该结构包括一层透明导电材料和至少一层半导体材料，它们布置在隔离层上，在隔离层内设置连接装置，用于建立光学活性薄层结构与集成半导体之间的连接 结构布置在基板上。 本发明的目的是开发一种这样的光电子部件，使得可以以技术上简单的方式建立透明导电材料层与电势连接之间的电连接。 为此，透明导电材料层可以通过形成在基板上的附加导电结构连接到布置在像素布置外部的电位连接。

公开(公告)号：US20060006482A1

公开(公告)日：2006-01-12

申请号：US10521427

申请日：2003-07-14

申请人： Peter Rieve ,  Marcus Walder ,  Konstantin Seibel ,  Jens Prima ,  Arash Mirhamed

发明人： Peter Rieve ,  Marcus Walder ,  Konstantin Seibel ,  Jens Prima ,  Arash Mirhamed

IPC分类号： H01L27/14 ,  H01L31/06 ,  H01L31/00 ,  H01L31/0232

CPC分类号： H01L31/1055 ,  H01L27/14665

摘要： The invention relates to a TFA image sensor with stability-optimized photodiode for converting electromagnetic radiation into an intensity-dependent photocurrent with an intermetal dielectric, on which, in the region of the pixel matrix, a lower barrier layer is situated and a conductive layer is situated on the barrier layer, and vias being provided for the contact connection to the ASIC, the vias in metal contacts on the ASIC. A TFA image sensor having improved electrical properties is provided. This is achieved in that an intrinsic absorption layer is provided between the TCO layer and the barrier layer with a layer thickness of between 300 nm and 600 nm. Before the application of the photodiodes, the topmost, comparatively thick metal layer of the ASIC is removed and replaced by a matrix of thin metal electrodes which form the back electrodes of the photodiodes, the matrix being patterned in the pixel raster.

摘要翻译： 本发明涉及一种具有稳定性优化的光电二极管的TFA图像传感器，用于将电磁辐射转换为具有金属间电介质的强度依赖性光电流，其中在像素矩阵区域中位于下阻挡层，导电层为 位于阻挡层上的通孔，以及用于与ASIC的接触连接的通孔，ASIC上的金属触点中的通孔。 提供了具有改进的电性能的TFA图像传感器。 这是通过在TCO层和阻挡层之间设置本征吸收层的层厚度在300nm和600nm之间来实现的。 在施加光电二极管之前，ASIC的最顶层较厚的金属层被去除并由形成光电二极管的背电极的薄金属电极的矩阵代替，矩阵在像素光栅中被图案化。

公开(公告)号：US07701023B2

公开(公告)日：2010-04-20

申请号：US11875460

申请日：2007-10-19

申请人： Peter Rieve ,  Marcus Walder ,  Konstantin Seibel ,  Jens Prima ,  Arash Mirhamed

发明人： Peter Rieve ,  Marcus Walder ,  Konstantin Seibel ,  Jens Prima ,  Arash Mirhamed

IPC分类号： H01L27/14 ,  H01L31/00 ,  H01L31/0232 ,  H01L21/00

CPC分类号： H01L31/1055 ,  H01L27/14665

摘要： A TFA (thin film on ASIC) image sensor with stability-optimized photodiode for converting electromagnetic radiation into an intensity-dependent photocurrent. The TFA includes an intermetal dielectric layer, pixel back electrodes, vias, metal contacts, a transparent conductive oxide (TCO) layer, and an intrinsic absorption layer with a thickness between 300 nm and 600 nm. The pixel back electrodes are disposed over the intermetal dielectric layer, which is disposed over the ASIC. The vias connect to the pixel back electrodes and the metal contacts, which are formed in the intermetal dielectric layer. The TCO is disposed above the intrinsic absorption layer, which is disposed above the pixel back electrodes.

摘要翻译： 具有稳定性优化的光电二极管的TFA（ASIC上的薄膜）图像传感器，用于将电磁辐射转换为强度依赖的光电流。 TFA包括金属间介电层，像素背电极，通孔，金属接触，透明导电氧化物（TCO）层和厚度在300nm和600nm之间的本征吸收层。 像素背电极设置在设置在ASIC上方的金属间电介质层之上。 通孔连接到形成在金属间电介质层中的像素背电极和金属触点。 TCO设置在本征吸收层的上方，其设置在像素背电极之上。

公开(公告)号：US07382034B2

公开(公告)日：2008-06-03

申请号：US10477913

申请日：2002-05-15

申请人： Peter Rieve ,  Marcus Walder ,  Konstantin Seibel ,  Jens Prima ,  Reinhard Ronneberger ,  Markus Scholz ,  Tarek Lulé

发明人： Peter Rieve ,  Marcus Walder ,  Konstantin Seibel ,  Jens Prima ,  Reinhard Ronneberger ,  Markus Scholz ,  Tarek Lulé

IPC分类号： H01L31/00

CPC分类号： H01L27/14636 ,  H01L27/14603 ,  H01L27/14632 ,  H01L27/14643 ,  H01L31/02164 ,  H01L31/0224 ,  H01L31/03762

摘要： The invention relates to an optoelectronic component for converting electromagnetic radiation into an intensity-dependent photoelectric current. The component includes one substrate which is formed especially according to CMOS technology. The substrate has an integrated semiconductor structure and an optically active thin layer structure which is situated upstream in the direction of light incidence. The structure includes a layer of a transparent conductive material and at least one layer of semiconductor material, which are arranged on an isolating layer, inside which connection means are provided for establishing a connection between the optically active thin layer structure and the integrated semiconductor structure arranged on the substrate. The aim of the invention is to develop one such optoelectronic component in such a way that the electrical connection between the layer of transparent conductive material and an electrical potential connection can be established in a technically simple manner. To this end, the layer of transparent conductive material can be connected to the potential connection arranged outside the pixel arrangement by means of an additional conductive structure formed on the substrate.

摘要翻译： 本发明涉及一种用于将电磁辐射转换为强度依赖光电流的光电子部件。 该组件包括特别根据CMOS技术形成的一个衬底。 衬底具有集成的半导体结构和位于光入射方向上游的光学活性薄层结构。 该结构包括布置在隔离层上的透明导电材料层和至少一层半导体材料层，其中设置连接装置，用于建立光学活性薄层结构与布置的集成半导体结构之间的连接 在基板上。 本发明的目的是开发一种这样的光电子部件，使得可以以技术上简单的方式建立透明导电材料层与电势连接之间的电连接。 为此，透明导电材料层可以通过形成在基板上的附加导电结构连接到布置在像素布置外部的电位连接。

公开(公告)号：US20080128697A1

公开(公告)日：2008-06-05

申请号：US11875460

申请日：2007-10-19

申请人： Peter Rieve ,  Marcus Walder ,  Konstantin Seibel ,  Jens Prima ,  Arash Mirhamed

发明人： Peter Rieve ,  Marcus Walder ,  Konstantin Seibel ,  Jens Prima ,  Arash Mirhamed

IPC分类号： H01L31/0376 ,  H01L31/18

CPC分类号： H01L31/1055 ,  H01L27/14665

摘要： The invention relates to a TFA image sensor with stability-optimized photodiode for converting electromagnetic radiation into an intensity-dependent photocurrent with an intermetal dielectric, on which, in the region of the pixel matrix, a lower barrier layer is situated and a conductive layer is situated on the barrier layer, and vias being provided for the contact connection to the ASIC, the vias in metal contacts on the ASIC. A TFA image sensor having improved electrical properties is provided. This is achieved in that an intrinsic absorption layer is provided between the TCO layer and the barrier layer with a layer thickness of between 300 nm and 600 nm. Before the application of the photodiodes, the topmost, comparatively thick metal layer of the ASIC is removed and replaced by a matrix of thin metal electrodes which form the back electrodes of the photodiodes, the matrix being patterned in the pixel raster.

摘要翻译： 本发明涉及一种具有稳定性优化的光电二极管的TFA图像传感器，用于将电磁辐射转换为具有金属间电介质的强度依赖性光电流，其中在像素矩阵区域中位于下阻挡层，导电层为 位于阻挡层上的通孔，以及用于与ASIC的接触连接的通孔，ASIC上的金属触点中的通孔。 提供了具有改进的电性能的TFA图像传感器。 这是通过在TCO层和阻挡层之间设置本征吸收层的层厚度在300nm和600nm之间来实现的。 在施加光电二极管之前，ASIC的最顶层较厚的金属层被去除并由形成光电二极管的背电极的薄金属电极的矩阵代替，矩阵在像素光栅中被图案化。

公开(公告)号：US07053457B2

公开(公告)日：2006-05-30

申请号：US10469514

申请日：2002-02-26

申请人： Peter Rieve ,  Jens Prima ,  Konstantin Seibel ,  Marcus Walder

发明人： Peter Rieve ,  Jens Prima ,  Konstantin Seibel ,  Marcus Walder

IPC分类号： H01L31/00 ,  H01L29/04 ,  H01L31/0376 ,  H01L31/20 ,  H01L31/036

CPC分类号： H01L27/14676 ,  H01L27/14603 ,  H01L31/028 ,  H01L31/1055 ,  H01L31/108 ,  H01L31/115 ,  Y02E10/547

摘要： The invention relates to an opto-electronic component for converting electromagnetic radiation into an intensity-dependent photocurrent, comprising a substrate (1) with a microelectronic circuit whose surface is provided with a first layer (7) which is electrically contacted thereto and made of amorphous silicon a-i:H or alloys thereof, and at least one other optically active layer (8) is disposed upstream from said first layer in the direction of incident light thereof (7). The invention also relates to the production thereof. The aim of the invention is to improve upon an opto-electronic component of the above-mentioned variety in order to obtain high spectral sensitivity within the visible light range and, correspondingly, significantly reduce sensitivity to radiation in the infrared range without incurring any additional construction costs. The invention is characterized in that a component is produced using a material in the intrinsic absorption layer (7) which is modified by an additional hydrocarbon content corresponding to alloy conditions, whereupon photons whose energy is less than the energy gap between two bands are absorbed only in reverse contact of the component which is sealed off from the substrate, as opposed to being absorbed in the first layer.

摘要翻译： 本发明涉及一种用于将电磁辐射转换成强度依赖光电流的光电元件，其包括具有微电子电路的基片（1），该微电子电路的表面设置有第一层（7），该第一层与第一层（7）电接触并由非晶 硅ai：H或其合金，并且至少一个其它光学活性层（8）在其入射光（7）的方向上设置在所述第一层的上游。 本发明还涉及其生产。 本发明的目的是改进上述品种的光电子部件，以便在可见光范围内获得高光谱灵敏度，并相应地显着地降低对红外范围的辐射敏感度，而不会产生任何附加的结构 费用 本发明的特征在于，使用本征吸收层（7）中的材料制备组分，其通过对应于合金条件的附加烃含量进行改性，因此其能量小于两个带之间的能隙的光子仅被吸收 与从衬底密封的部件反接触，而不是被吸收在第一层中。

公开(公告)号：US20060102829A1

公开(公告)日：2006-05-18

申请号：US11271492

申请日：2005-11-11

申请人： Peter Rieve ,  Konstantin Seibel ,  Jens Prima ,  Markus Scholz ,  Tarek Lule ,  Stephen Benthien ,  Michael Sommer ,  Michael Wagner

发明人： Peter Rieve ,  Konstantin Seibel ,  Jens Prima ,  Markus Scholz ,  Tarek Lule ,  Stephen Benthien ,  Michael Sommer ,  Michael Wagner

IPC分类号： H01L27/00 ,  H01L31/00

CPC分类号： H01L27/14643 ,  H01L27/14603 ,  H01L27/14609 ,  H01L31/02162 ,  H01L31/0376 ,  Y02E10/50

摘要： The invention relates to a method for producing a TFA image sensor in which a multi-layer arrangement comprising a photo diode matrix is arranged on an ASIC switching circuit provided with electronic circuits for operating the TFA image sensor, such as pixel electronics, peripheral electronics and system electronics, for the pixel-wise conversion of electromagnetic radiation into an intensity-dependent photocurrent, the pixels being connected to contacts of the underlying pixel electronics of the ASIC switching circuit. The method enables conventionally produced ASIC switching circuits to be used without impairing the topography of the photoactive sensor surface. The CMOS passivation layer in the photoactive region and then the upper CMOS metallization are removed and replaced by a metallic layer which is structured in the pixel raster, for the formation of back electrodes. The photo diode matrix is then applied and structured, said photo diode matrix being embodied as a pixel matrix, on which a passivating protective layer and/or a color filter layer having a passivating action can be applied.

摘要翻译： 本发明涉及一种制造TFA图像传感器的方法，其中包括光电二极管阵列的多层布置被布置在ASIC切换电路上，该ASIC开关电路设置有用于操作TFA图像传感器的电子电路，例如像素电子器件，外围电子器件和 系统电子器件，用于将电磁辐射像素地转换成强度依赖的光电流，像素连接到ASIC开关电路的底层像素电子器件的触点。 该方法能够在不损害光敏传感器表面的形貌的情况下使用常规生产的ASIC切换电路。 去除光致活性区域中的CMOS钝化层，然后去除上部CMOS金属化的CMOS钝化层，并由构成像素栅格的金属层代替以形成背面电极。 然后施加和构造光电二极管矩阵，所述光电二极管矩阵被实现为像素矩阵，其上可以应用具有钝化作用的钝化保护层和/或滤色器层。

公开(公告)号：US07326589B2

公开(公告)日：2008-02-05

申请号：US11271492

申请日：2005-11-11

申请人： Peter Rieve ,  Konstantin Seibel ,  Jens Prima ,  Markus Scholz ,  Tarek Lule ,  Stephan Benthien ,  Michael Sommer ,  Michael Wagner

发明人： Peter Rieve ,  Konstantin Seibel ,  Jens Prima ,  Markus Scholz ,  Tarek Lule ,  Stephan Benthien ,  Michael Sommer ,  Michael Wagner

IPC分类号： H01L21/00

CPC分类号： H01L27/14643 ,  H01L27/14603 ,  H01L27/14609 ,  H01L31/02162 ,  H01L31/0376 ,  Y02E10/50

摘要： The invention relates to a method for producing a TFA image sensor in which a multi-layer arrangement comprising a photo diode matrix is arranged on an ASIC switching circuit provided with electronic circuits for operating the TFA image sensor, such as pixel electronics, peripheral electronics and system electronics, for the pixel-wise conversion of electromagnetic radiation into an intensity-dependent photocurrent, the pixels being connected to contacts of the underlying pixel electronics of the ASIC switching circuit. The method enables conventionally produced ASIC switching circuits to be used without impairing the topography of the photoactive sensor surface. The CMOS passivation layer in the photoactive region and then the upper CMOS metallization are removed and replaced by a metallic layer which is structured in the pixel raster, for the formation of back electrodes. The photo diode matrix is then applied and structured, said photo diode matrix being embodied as a pixel matrix, on which a passivating protective layer and/or a color filter layer having a passivating action can be applied.

摘要翻译： 本发明涉及一种制造TFA图像传感器的方法，其中包括光电二极管阵列的多层布置被布置在ASIC切换电路上，该ASIC开关电路设置有用于操作TFA图像传感器的电子电路，例如像素电子器件，外围电子器件和 系统电子器件，用于将电磁辐射像素地转换成强度依赖的光电流，像素连接到ASIC开关电路的底层像素电子器件的触点。 该方法能够在不损害光敏传感器表面的形貌的情况下使用常规生产的ASIC切换电路。 去除光致活性区域中的CMOS钝化层，然后去除上部CMOS金属化的CMOS钝化层，并由构成像素栅格的金属层代替以形成背面电极。 然后施加和构造光电二极管矩阵，所述光电二极管矩阵被实现为像素矩阵，其上可以应用具有钝化作用的钝化保护层和/或滤色器层。