公开(公告)号：US20240401192A1

公开(公告)日：2024-12-05

申请号：US18675851

申请日：2024-05-28

Applicant: ASM IP Holding B.V.

Inventor： Eric James Shero ,  Paul Ma ,  Jereld Lee Winkler ,  Todd Robert Dunn ,  Shuaidi Zhang ,  Jacqueline Wrench ,  Shubham Garg ,  Jonathan Bakke

IPC: C23C16/448 ,  C23C16/455 ,  C23C16/52

Abstract: Various examples of the present disclosure relate to methods, systems, and apparatus for coupling a delivery vessel disposed at a first location on a substrate processing platform to a remote refill vessel disposed in a second location remote from the substrate processing platform, storing a chemical in the remote refill vessel in a first phase, changing the chemical in the remote refill vessel to a second phase, transporting the chemical in the second phase, to the delivery vessel, maintaining a temperature gradient within an inner volume of the delivery vessel, and returning the chemical to the first phase within the inner volume.

公开(公告)号：US20240395586A1

公开(公告)日：2024-11-28

申请号：US18672416

申请日：2024-05-23

Applicant: ASM IP Holding B.V.

Inventor： Adriaan Garssen

IPC: H01L21/673 ,  B25J15/06 ,  H01L21/02 ,  H01L21/687

Abstract: A wafer handling assembly, a semiconductor processing apparatus comprising the wafer handling assembly and a method of forming a layer on a plurality of wafers is disclosed. Embodiments of the described wafer handling assembly comprise a boat having three boat supports per wafer for supporting the wafer in the boat and an end effector comprising three end effector supports for supporting a wafer on the end effector.

公开(公告)号：US12154785B2

公开(公告)日：2024-11-26

申请号：US17814161

申请日：2022-07-21

Applicant: ASM IP HOLDING B.V.

Inventor： Suvi P. Haukka ,  Elina Färm ,  Raija H. Matero ,  Eva E. Tois ,  Hidemi Suemori ,  Antti Juhani Niskanen ,  Sung-Hoon Jung ,  Petri Räisänen

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455

Abstract: Methods are provided herein for deposition of oxide films. Oxide films may be deposited, including selective deposition of oxide thin films on a first surface of a substrate relative to a second, different surface of the same substrate. For example, an oxide thin film such as an insulating metal oxide thin film may be selectively deposited on a first surface of a substrate relative to a second, different surface of the same substrate. The second, different surface may be an organic passivation layer.

公开(公告)号：US20240379347A1

公开(公告)日：2024-11-14

申请号：US18656799

申请日：2024-05-07

Applicant: ASM IP Holding B.V.

Inventor： Mikko Ruoho ,  Eva E. Tois ,  Viljami J. Pore ,  Marko Tuominen

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32

Abstract: The present disclosure relates to methods and systems for selectively depositing a material comprising silicon and nitrogen onto a substrate comprising a first surface and a second surface, wherein the deposition occurs on the first surface of the substrate more so than on the second surface of the substrate. More specifically, the methods and systems comprise exposing a substrate that comprises a first surface and a second surface to a source of chlorine and a source of silicon, then exposing the substrate to a source of nitrogen to selectively deposit a material comprising silicon and nitrogen on the first surface of the substrate.

公开(公告)号：US12125722B2

公开(公告)日：2024-10-22

申请号：US17351592

申请日：2021-06-18

Applicant: ASM IP HOLDING B.V.

Inventor： Yukihiro Mori

IPC: H01L21/67 ,  H01L21/66 ,  G02F1/13

CPC classification number: H01L21/6719 ,  H01L21/67167 ,  H01L22/20 ,  G02F1/1303

Abstract: A vacuum process module has a pre-shaped ceiling and/or bottom that is shaped to bulge outwards. The shape of the ceiling and/or process modules counteracts deformation caused by vacuum pressures and/or high temperatures when processing substrates in the process module. The process module may have a side openable to a transfer chamber and an opposite side opposite the openable side. The bulge may be asymmetric, with the peak of the bulge off-center on the ceiling and closer to the opposite side than to the openable side. A rigid structure may be mounted on the ceiling to adjust the magnitude of the bulge in the ceiling. The beam may be, e.g., a rigid beam having an adjustable lift mechanism for lifting up an attached part of the ceiling. The process module may accommodate a plurality of substrates for processing, with each substrate occupying a dedicated stage in the process module.

公开(公告)号：US12119228B2

公开(公告)日：2024-10-15

申请号：US17845325

申请日：2022-06-21

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu ,  Henri Jussila ,  Qi Xie

IPC: C23C16/06 ,  C23C16/02 ,  C23C16/04 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768

CPC classification number: H01L21/28568 ,  C23C16/0227 ,  C23C16/04 ,  C23C16/45534 ,  C23C16/45553 ,  H01L21/76879

Abstract: A method of selectively depositing a material on a substrate with a first and second surface, the first surface being different than the second surface. The depositing of the material on the substrate comprises: supplying a bulk precursor comprising metal atoms, halogen atoms and at least one additional atom not being a metal or halogen atom to the substrate; and supplying a reactant to the substrate. The bulk precursor and the reactant have a reaction with the first surface relative to the second surface to form more material on the first surface than on the second surface.

公开(公告)号：US20240339493A1

公开(公告)日：2024-10-10

申请号：US18624808

申请日：2024-04-02

Applicant: ASM IP Holding B.V.

Inventor： Alessandra Leonhardt ,  Varun Sharma ,  Vivek Koladi Mootheri ,  Leo Lukose ,  Andrea Illiberi ,  Jerome Innocent ,  Aditya Chauhan

IPC: H01L29/06 ,  H01L21/02 ,  H01L29/778

CPC classification number: H01L29/0607 ,  H01L21/02362 ,  H01L28/75 ,  H01L29/7786

Abstract: Structures and related methods and systems for forming structures. The structures comprise a proximal contact, a distal contact, a high-k dielectric, and at least one of a proximal barrier and a distal barrier. In some embodiments, at least one of the proximal barrier and the distal barrier is constructed and arranged to inhibit Poole-Frenkel emission from the high-k dielectric when a first electric field is applied between the proximal contact and a distal contact in a first electric field direction.

公开(公告)号：US20240331984A1

公开(公告)日：2024-10-03

申请号：US18620464

申请日：2024-03-28

Applicant: ASM IP Holding B.V.

Inventor： Yanfu Lu ,  Alexandros Demos

IPC: H01J37/32 ,  C23C16/24 ,  C23C16/46 ,  H01L21/02

CPC classification number: H01J37/32522 ,  C23C16/24 ,  C23C16/46 ,  H01J37/32357 ,  H01L21/02532 ,  H01L21/0262 ,  H01J2237/3321

Abstract: Methods and apparatuses for a material layer deposition method in a semiconductor manufacturing system. A controller may seat a substrate on a substrate support. A silicon-containing material layer precursor may be provided to a remote plasma unit, which may decompose at least a portion of the silicon-containing material layer precursor. An epitaxial material layer comprising silicon may be deposited onto the substrate using a decomposition product. The deposition rate and/or growth rate may be increased at a given deposition temperature.

公开(公告)号：US12104250B2

公开(公告)日：2024-10-01

申请号：US17822576

申请日：2022-08-26

Applicant: ASM IP Holding, B.V.

Inventor： Timo Hatanpää ,  Anton Vihervaara ,  Mikko Ritala

IPC: C23C16/455 ,  C23C16/08

CPC classification number: C23C16/45553 ,  C23C16/08 ,  C23C16/45527

Abstract: The present disclosure relates to methods for depositing an elemental metal or semimetal-containing material on a substrate by a cyclic deposition process, to an elemental metal or semimetal-containing layer, to a semiconductor structure and a device, and to deposition assemblies for depositing elemental metal or semimetal-containing material on a substrate. A method according to the current disclosure comprises providing a substrate in a reaction chamber, providing a metal or a semimetal precursor to the reaction chamber in a vapor phase, and providing a reducing agent into the reaction chamber in a vapor phase to form elemental metal or semimetal-containing material on the substrate. The reducing agent according to the method comprises a cyclohexadiene compound selected from compounds comprising a germanium-containing substituent.

公开(公告)号：US12104244B2

公开(公告)日：2024-10-01

申请号：US17953769

申请日：2022-09-27

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Viljami Pore

IPC: C23C16/04 ,  C23C16/08 ,  C23C16/513 ,  C23C16/56 ,  H01L21/285

CPC classification number: C23C16/045 ,  C23C16/08 ,  C23C16/513 ,  C23C16/56 ,  H01L21/28556

Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises forming a convertible layer on the substrate and exposing the substrate to a conversion reactant. Accordingly, at least a part of the convertible layer is converted into a gap filling fluid. The gap filling fluid at least partially fills the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.