公开(公告)号：US20070035469A1

公开(公告)日：2007-02-15

申请号：US11496404

申请日：2006-08-01

Applicant: Jong-ho Lee ,  Kwang-kee Lee ,  Un-gyo Jung ,  Glenn Adams

Inventor： Jong-ho Lee ,  Kwang-kee Lee ,  Un-gyo Jung ,  Glenn Adams

IPC: H04N5/445 ,  H04N5/45 ,  G09G5/00

CPC classification number: G09G5/14 ,  G09G2340/0407 ,  G09G2340/0464 ,  G09G2340/10 ,  G09G2340/12 ,  G09G2340/125 ,  H04N5/445 ,  H04N5/44591 ,  H04N5/45 ,  H04N21/4312 ,  H04N21/4314 ,  H04N21/4316 ,  H04N21/443 ,  H04N21/4622

Abstract: An apparatus for providing multiple screens and a method of dynamically configuring multiple screens are provided. The apparatus for providing multiple screens includes a screen generating module which generates a screen for displaying a service and a service selecting module which connects the service to the screen generated by the service generating module.

Abstract translation: 提供了一种用于提供多个屏幕的装置和一种动态配置多个屏幕的方法。 用于提供多个屏幕的设备包括生成用于显示服务的屏幕的屏幕生成模块和将服务连接到由服务生成模块生成的屏幕的服务选择模块。

公开(公告)号：US20060081948A1

公开(公告)日：2006-04-20

申请号：US11252514

申请日：2005-10-18

Applicant: Ha-Jin Lim ,  Jong-Ho Lee ,  Hyung-Suk Jung

Inventor： Ha-Jin Lim ,  Jong-Ho Lee ,  Hyung-Suk Jung

IPC: H01L21/8238 ,  H01L29/94

CPC classification number: H01L21/28185 ,  H01L21/28079 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/823857 ,  H01L29/495 ,  H01L29/513 ,  H01L29/517

Abstract: Transistors that include multilayered dielectric films on a channel region are provided. The multilayered dielectric comprises a lower dielectric film that may have a thickness that is at least 50% the thickness of the multilayered dielectric film and that comprises a metal oxide, a metal silicate, an aluminate, or a mixture thereof, and an upper dielectric film on the lower dielectric film, the upper dielectric film comprising a Group III metal oxide, Group III metal nitride, Group XIII metal oxide or Group XIII metal nitride. A gate electrode is provided on the multilayered dielectric film.

Abstract translation: 提供了在通道区​​域上包括多层电介质膜的晶体管。 多层电介质包括下电介质膜，该电介质膜的厚度至少为多层电介质膜的厚度的50％，并且包括金属氧化物，金属硅酸盐，铝酸盐或其混合物，以及上电介质膜 在下介电膜上，上电介质膜包含III族金属氧化物，III族金属氮化物，第ⅩⅢ族金属氧化物或第ⅩⅢ族金属氮化物。 在多层电介质膜上设置栅电极。

公开(公告)号：US06965293B2

公开(公告)日：2005-11-15

申请号：US10877188

申请日：2004-06-24

Applicant: Soo-An Choi ,  Jong-Ho Lee ,  Chang-Hee Choi ,  Tae-Sung Kim ,  Jun-Ku Hahn

Inventor： Soo-An Choi ,  Jong-Ho Lee ,  Chang-Hee Choi ,  Tae-Sung Kim ,  Jun-Ku Hahn

IPC: H01C1/14 ,  H01C7/02 ,  H01C7/10

CPC classification number: H01C1/1406 ,  H01C7/027

Abstract: An electrical device including a PTC conductive polymer sheet, and first and second electrodes physically contacted with opposite surfaces of the conductive polymer sheet is disclosed. The first and second electrodes have a plurality of protrusions protruded from surfaces thereof, respectively. The protrusions have an surface roughness (Rz) of 1 to 20 μm and an average width ({overscore (Rw)}) which is 0.5 to 2 times of the surface roughness (Rz), and an average gap ({overscore (Rg)}) between adjacent protrusions is 0.5 and 2 times of the surface roughness (Rz). The conductive polymer sheet has a thickness which is more than 5 times of the surface roughness (Rz).

Abstract translation: 公开了一种包括PTC导电聚合物薄片的电气装置以及与导电聚合物薄片的相对表面物理接触的第一和第二电极。 第一和第二电极分别具有从其表面突出的多个突起。 突起的表面粗糙度（Rz）为1〜20μm，平均宽度（{超芯（Rw）为表面粗糙度（Rz）的0.5〜2倍），平均间隙（{间距（Rg） 突起是表面粗糙度的0.5倍和2倍（Rz），导电性聚合物片的厚度大于表面粗糙度（Rz）的5倍。

公开(公告)号：US20050233598A1

公开(公告)日：2005-10-20

申请号：US11107559

申请日：2005-04-15

Applicant: Hyung-Suk Jung ,  Jong-Ho Lee ,  Ha-Jin Lim ,  Jae-Eun Park ,  Yun-Seok Kim ,  Jong-Ho Yang

Inventor： Hyung-Suk Jung ,  Jong-Ho Lee ,  Ha-Jin Lim ,  Jae-Eun Park ,  Yun-Seok Kim ,  Jong-Ho Yang

IPC: H01L21/31 ,  C23C16/40 ,  H01L21/28 ,  H01L21/314 ,  H01L21/336 ,  H01L21/469 ,  H01L29/51

CPC classification number: H01L21/022 ,  C23C16/402 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45529 ,  H01L21/0228 ,  H01L21/02318 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/3142 ,  H01L21/3143 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

Abstract: Methods of fabricating high-k dielectric layers having reduced impurities for use in semiconductor applications are disclosed. The methods include the steps of: forming a stacked dielectric layer having a first dielectric layer and a second dielectric layer formed on a semiconductor substrate using an ALD method, in combination with a post-treatment step performed to the stacked dielectric layer. The steps of forming the stacked dielectric layer and performing the post-treatment are repeated at least once, thereby fabricating the high-k dielectric layer.

Abstract translation: 公开了制造用于半导体应用的具有减少的杂质的高k电介质层的方法。 该方法包括以下步骤：结合对叠层电介质层执行的后处理步骤，使用ALD法形成具有形成在半导体衬底上的第一电介质层和第二电介质层的叠层电介质层。 形成堆叠的电介质层并进行后处理的步骤至少重复一次，从而制造高k电介质层。

公开(公告)号：US06916074B2

公开(公告)日：2005-07-12

申请号：US10911708

申请日：2004-08-04

Applicant: In-Yong Jung ,  Jae-Hwan Jeon ,  Jong-Ho Lee

Inventor： In-Yong Jung ,  Jae-Hwan Jeon ,  Jong-Ho Lee

IPC: B60T8/17 ,  B60T7/02 ,  B60T7/04 ,  B60T7/06 ,  F16F9/53 ,  B60T7/00

CPC classification number: B60T7/042 ,  G05G1/44 ,  G05G5/03 ,  Y10T74/20528 ,  Y10T74/20888

Abstract: A torsion spring is equipped to provide a resilient force toward an opposite direction of a manipulation force of a driver's pedal and an magnetorheological damper is equipped to promptly actively attenuate the resilient force of the torsion spring and the manipulation force of the driver's pedal. Thereby, contributing to a wide control range of the reaction force of the pedal, an effective response, and a proper formation of hysteresis of the reaction force of the pedal.

Abstract translation: 扭转弹簧被配备成朝向驾驶员踏板的操纵力的相反方向提供弹性力，并且磁流变阻尼器被装备成迅速地主动衰减扭簧的弹力和驾驶员踏板的操纵力。 因此，有助于踏板的反作用力的大的控制范围，有效的响应以及踏板的反作用力的适当的迟滞形成。

公开(公告)号：US06815285B2

公开(公告)日：2004-11-09

申请号：US10425276

申请日：2003-04-29

Applicant: Gil-Heyun Choi ,  Jong-Ho Lee ,  Kyung-In Choi ,  Byung-Hee Kim

Inventor： Gil-Heyun Choi ,  Jong-Ho Lee ,  Kyung-In Choi ,  Byung-Hee Kim

IPC: H01L218238

CPC classification number: H01L21/28185 ,  H01L21/265 ,  H01L21/28088 ,  H01L21/28202 ,  H01L21/82345 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

Abstract: A method for forming a dual gate includes providing a semiconductor substrate that has a first region of a first conductivity type and a second region of a second conductivity type. A gate insulating layer is formed on the semiconductor substrate. An initial metal nitride layer is formed on the gate insulating layer, opposite to the semiconductor substrate. Nitrogen ions are implanted into the initial metal nitride layer in the second transistor region to form a nitrogen-rich metal nitride layer. The initial metal nitride layer is patterned to form a first gate electrode in the first region. The nitrogen-rich metal nitride layer is patterned to form a second gate electrode in the second region. The work function of the nitrogen-rich metal nitride layer is higher than that of the initial metal nitride layer.

Abstract translation: 形成双栅极的方法包括提供具有第一导电类型的第一区域和第二导电类型的第二区域的半导体衬底。 在半导体衬底上形成栅极绝缘层。 在栅极绝缘层上形成与半导体衬底相反的初始金属氮化物层。 将氮离子注入到第二晶体管区域中的初始金属氮化物层中以形成富氮金属氮化物层。 图案化初始金属氮化物层以在第一区域中形成第一栅电极。 图案化富氮金属氮化物层以在第二区域中形成第二栅电极。 富氮金属氮化物层的功函数高于初始金属氮化物层的功函数。

公开(公告)号：US06563151B1

公开(公告)日：2003-05-13

申请号：US09654859

申请日：2000-09-05

Applicant: Hyung-cheol Shin ,  Jong-ho Lee ,  Sang-yeon Han

Inventor： Hyung-cheol Shin ,  Jong-ho Lee ,  Sang-yeon Han

IPC: H01L2976

CPC classification number: H01L29/66643 ,  H01L21/2807 ,  H01L21/28105 ,  H01L29/1083 ,  H01L29/4983 ,  H01L29/7831 ,  H01L29/7836

Abstract: Field effect transistors include a semiconductor substrate having a channel region of first conductivity type therein extending adjacent a surface thereof. Source and drain regions of second conductivity type are also provided at opposite ends of the channel region. The source and drain regions extend in the semiconductor substrate and form P-N rectifying junctions with the channel region. A gate electrode extends on the channel region and comprises a first electrically conductive material having a first work function. A first sub-gate electrode extends on the channel region and comprises a second electrically conductive material having a second work function that is unequal to the first work function. The second electrically conductive material is preferably selected so that a difference between the second work function and a work function of the channel region is sufficient to form an inversion-layer in a portion of the channel region extending opposite the first sub-gate electrode when the first sub-gate electrode is at a zero potential bias relative to the channel region.

公开(公告)号：USD999884S1

公开(公告)日：2023-09-26

申请号：US29801569

申请日：2021-07-29

Applicant: Jong Ho Lee ,  Hye Jung Lee

Designer： Jong Ho Lee ,  Hye Jung Lee

Abstract: FIG. 1 is a perspective view of a pipe connecting tube showing our new design,
FIG. 2 is a front view thereof,
FIG. 3 is a rear view thereof,
FIG. 4 is a left-side view thereof,
FIG. 5 is a right-side view thereof,
FIG. 6 is a plan view thereof,
FIG. 7 is a bottom view thereof; and,
FIG. 8 is an exploded perspective view of thereof.
The light lines in the drawing figures depict transparent portions of the pipe connecting tube.
The broken lines shown in the figures are for the purpose of illustrating portions of the pipe connecting tube and form no part of the claimed design.

公开(公告)号：USD992701S1

公开(公告)日：2023-07-18

申请号：US29801572

申请日：2021-07-29

Applicant: Jong Ho Lee ,  Hye Jung Lee

Designer： Jong Ho Lee ,  Hye Jung Lee

Abstract: FIG. 1 is a perspective view of a pipe connecting tube showing our new design,
FIG. 2 is a front view thereof,
FIG. 3 is a rear view thereof,
FIG. 4 is a left-side view thereof,
FIG. 5 is a right-side view thereof,
FIG. 6 is a plan view thereof,
FIG. 7 is a bottom view thereof; and,
FIG. 8 is an exploded perspective view of thereof.
The light lines in the drawing figures depict transparent portions of the pipe connecting tube.

公开(公告)号：US20190251857A1

公开(公告)日：2019-08-15

申请号：US16342248

申请日：2017-10-13

Applicant: Jong-Ho LEE

Inventor： Jong-Ho LEE

IPC: G09B7/08 ,  G06F16/33 ,  G09B7/073

CPC classification number: G09B7/08 ,  G06F9/44 ,  G06F16/3341 ,  G06Q50/20 ,  G06Q50/2057 ,  G09B7/06 ,  G09B7/073

Abstract: Disclosed are a device and method for providing a checking question designed to allow a user to perform the checking study of correct answers or incorrect answers by using the choices of one or more incorrectly answered questions. The device includes: an incorrectly answered question selection unit which selects one or more questions incorrectly answered by a user from among questions provided to the user; a choice extraction unit which extracts correct answers as choices for the respective selected incorrectly answered questions; a checking question generation unit which generates one or more checking questions designed to allow the user to study the incorrectly answered questions by allocating the extracted choices so that the extracted choices become the choices of the checking questions; and a checking study provision unit which provides the study of the incorrectly answered questions by transmitting the generated checking questions to a user terminal.