OPTICAL WAVEGUIDE
    52.
    发明申请
    OPTICAL WAVEGUIDE 审中-公开
    光波导

    公开(公告)号:US20080170822A1

    公开(公告)日:2008-07-17

    申请号:US11971248

    申请日:2008-01-09

    CPC classification number: G02B6/4214

    Abstract: An optical waveguide and method of providing that enhances high-speed communication includes a waveguide medium having at least one groove, in which a side wall exposed by the groove is formed inclined with respect to the traveling path of light. A reflection block having a reflection mirror faces the inclined side wall of the groove, in which the reflection block is typically arranged in the groove to face the side wall of the groove, and a refractive index matching layer is typically a coating arranged between the side wall of the groove and the reflection mirror.

    Abstract translation: 提供增强高速通信的光波导和方法包括具有至少一个凹槽的波导介质,其中由凹槽暴露的侧壁相对于光的行进路径形成倾斜。 具有反射镜的反射块面向凹槽的倾斜侧壁,其中反射块通常布置在凹槽中以面对凹槽的侧壁,并且折射率匹配层通常是布置在侧面之间的涂层 凹槽和反射镜的墙壁。

    Semiconductor optical amplifier having photo detector and method of fabricating the same
    54.
    发明授权
    Semiconductor optical amplifier having photo detector and method of fabricating the same 有权
    具有光电检测器的半导体光放大器及其制造方法

    公开(公告)号:US07110170B2

    公开(公告)日:2006-09-19

    申请号:US10780306

    申请日:2004-02-17

    Abstract: A gain-clamped semiconductor optical amplifier having photo detectors which are integrated on a single crystal substrate can detect optical intensities at input/output terminals of the optical amplifier. The semiconductor optical amplifier includes a first conductive semiconductor substrate, a semiconductor optical amplifier formed on the semiconductor substrate so as to have a horizontal-direction lasing structure, and a first and a second photo detector formed respectively at positions of the semiconductor substrate spaced horizontally from an input side and an output side of the semiconductor optical amplifier so as to measure intensities of an input signal and an output signal of the semiconductor optical amplifier.

    Abstract translation: 集成在单晶衬底上的具有光电检测器的增益钳位半导体光放大器可以检测光放大器的输入/输出端的光强度。 半导体光放大器包括第一导电半导体衬底,形成在半导体衬底上以便具有水平方向激光结构的半导体光放大器,以及第一和第二光电检测器,分别形成在半导体衬底的水平方向 半导体光放大器的输入侧和输出侧,以测量半导体光放大器的输入信号和输出信号的强度。

    Gain-clamped semiconductor optical amplifier having horizontal lasing structure and manufacturing method thereof
    55.
    发明授权
    Gain-clamped semiconductor optical amplifier having horizontal lasing structure and manufacturing method thereof 失效
    具有水平激光结构的增益钳位半导体光放大器及其制造方法

    公开(公告)号:US07081643B2

    公开(公告)日:2006-07-25

    申请号:US10781508

    申请日:2004-02-18

    Abstract: A gain-clamped semiconductor optical amplifier having a horizontal lasing structure in which an oscillation direction of a laser is different from an amplification direction of a signal, and a method for manufacturing the gain-clamped semiconductor optical amplifier. The gain-clamped semiconductor optical amplifier includes a gain layer for amplifying an optical signal. A Bragg lattice layer is formed on both sides of the gain layer along a longitudinal direction of the gain layer for enabling light having a corresponding wavelength to resonate in a direction vertical to the longitudinal direction of the gain layer. A passive light waveguide restrains light resonating between lattices of the Bragg lattice layer. An electrode supplies current to the gain layer, and a current-blocking layer prevents current from flowing to an area other than the gain layer.

    Abstract translation: 一种具有水平激光结构的增益钳位半导体光放大器,其中激光器的振荡方向与信号的放大方向不同,以及用于制造增益钳位半导体光放大器的方法。 增益钳位半导体光放大器包括用于放大光信号的增益层。 沿着增益层的纵向方向在增益层的两侧形成布拉格晶格层,使得具有相应波长的光能够在垂直于增益层的纵向的方向上共振。 无源光波导抑制在布拉格晶格层的晶格之间谐振的光。 电极向增益层提供电流,并且电流阻挡层防止电流流向除了增益层之外的区域。

    Broadband light source
    56.
    发明申请
    Broadband light source 有权
    宽带光源

    公开(公告)号:US20050185262A1

    公开(公告)日:2005-08-25

    申请号:US10874429

    申请日:2004-06-23

    Abstract: A broadband light source is disclosed. The broadband light source includes a semiconductor optical amplifier for generating and amplifying light of a broadband wavelength, the amplifier having a first end and a second end and a mirror spaced from the second end of the semiconductor optical amplifier to reflect the light, which is provided by the semiconductor optical amplifier, back to the semiconductor optical amplifier, wherein the semiconductor optical amplifier amplifies the light reflected from the mirror and outputs the amplified light to the first end of the semiconductor optical amplifier. The light source further including at least one lens system to converge light passing through the amplifier ends.

    Abstract translation: 公开了宽带光源。 宽带光源包括用于产生和放大宽带波长的光的半导体光放大器,该放大器具有第一端和第二端以及与该半导体光放大器的第二端间隔开以反射所述光的反射镜 通过半导体光放大器返回到半导体光放大器,其中半导体光放大器放大从反射镜反射的光,并将放大的光输出到半导体光放大器的第一端。 该光源还包括至少一个透镜系统以会聚通过放大器端的光。

    Reflective semiconductor optical amplifier light source
    57.
    发明申请
    Reflective semiconductor optical amplifier light source 有权
    反光半导体光放大器光源

    公开(公告)号:US20050105171A1

    公开(公告)日:2005-05-19

    申请号:US10867035

    申请日:2004-06-14

    CPC classification number: H01S5/50 H01S5/005 H01S5/0064 H01S5/0078 H01S5/5018

    Abstract: A reflective semiconductor optical amplifier light source is disclosed. The reflective semiconductor optical amplifier light source includes a transmissive type semiconductor optical amplifier for creating and amplifying spontaneous emission light, a reflector for reflecting amplified spontaneous emission light outputted from the semiconductor optical amplifier such that amplified spontaneous emission light is reflected back into the semiconductor optical amplifier, and a bandpass filter having a predetermined wavelength band width for limiting wavelength bands of the amplified spontaneous emission light capable of passing through the bandpass filter. In one aspect of the invention, the bandpass filter is interposed between the semiconductor optical amplifier and the reflector. In another aspect, a polarization filter is imposed to limit the reflected emission light to a predetermined polarization.

    Abstract translation: 公开了一种反射半导体光放大器光源。 反射半导体光放大器光源包括用于产生和放大自发发射光的透射型半导体光放大器,用于反射从半导体光放大器输出的放大的自发发射光的反射器,使得放大的自发发射光被反射回到半导体光放大器 以及具有预定波长带宽的带通滤波器,用于限制能够通过带通滤波器的放大的自发发射光的波段。 在本发明的一个方面,带通滤波器插在半导体光放大器和反射器之间。 在另一方面,施加偏振滤光器以将反射的发射光限制到预定的偏振。

    Optical transmitter module and wavelength division multiplexing light source using the same
    58.
    发明申请
    Optical transmitter module and wavelength division multiplexing light source using the same 失效
    光发射模块和波分复用光源使用相同

    公开(公告)号:US20050089270A1

    公开(公告)日:2005-04-28

    申请号:US10841051

    申请日:2004-05-07

    CPC classification number: H01S5/50 H01L27/15 H01S5/0265 H01S5/028

    Abstract: An optical transmitter module for creating an optical signal having the same wavelength as an incoherent light inputted thereinto is provided. The module includes a substrate, a multi-layer crystal growth layer including a first area for amplifying the incoherent light and the optical signal and a second area for creating an optical signal having the same wavelength as the incoherent light amplified by means of the first area, and an electrode unit for independently injecting currents into the areas of the multi-layer crystal growth layer. A light generated at a broadband light source is spectrum-sliced and injected into the optical transmitter module so that a wavelength division multiplexing light source is realised.

    Abstract translation: 提供了一种用于产生具有与输入的非相干光相同波长的光信号的光发射机模块。 该模块包括衬底,多层晶体生长层,其包括用于放大非相干光和光信号的第一区域和用于产生与通过第一区域放大的非相干光波长相同的波长的光信号的第二区域 ,以及用于独立地向多层晶体生长层的区域注入电流的电极单元。 在宽带光源处产生的光被频谱分片并注入到光发射机模块中,从而实现波分复用光源。

    Gain-clamped semiconductor optical amplifier
    59.
    发明授权
    Gain-clamped semiconductor optical amplifier 失效
    增益钳位半导体光放大器

    公开(公告)号:US06865020B2

    公开(公告)日:2005-03-08

    申请号:US10658629

    申请日:2003-09-09

    CPC classification number: H01S5/5072 H01S3/2375

    Abstract: A gain-clamped semiconductor optical amplifier capable of providing constant gain for output optical signals at substantially all times is disclosed. In particular, the gain-clamped semiconductor optical amplifier according to the present invention comprises a active waveguide having an input and output side; clad layers surrounding the active waveguide; and a grating, which is formed partially at both end parts under the input and output sides of the active waveguide.

    Abstract translation: 公开了能够在几乎所有时间向输出光信号提供恒定增益的增益钳位半导体光放大器。 特别地,根据本发明的增益钳位半导体光放大器包括具有输入和输出侧的有源波导; 围绕有源波导的包层; 以及在有源波导的输入侧和输出侧的两端部分部分地形成的光栅。

    Semiconductor optical amplifier module with monitoring device

    公开(公告)号:US06661569B2

    公开(公告)日:2003-12-09

    申请号:US10086754

    申请日:2002-03-01

    CPC classification number: H01S5/02284 H01S5/02438 H01S5/0683 H01S5/50

    Abstract: The present invention discloses a semiconductor optical amplifier module with a monitoring device. The amplifier module includes a housing having a window on both sides of the opposite walls for forming a path of a first optical fiber and a second optical fiber, respectively; a semiconductor optical amplifier mounted in the housing for amplifying input optical signals and outputting the amplified optical signals; a first supporter for supporting the first optical fiber; a second supporter for supporting the second optical fiber; and a first optical detector for detecting non-coupled light, which is generated at the end of the first optical fiber.

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