-
公开(公告)号：US09515612B2
公开(公告)日：2016-12-06
申请号：US14163256
申请日：2014-01-24
Applicant: RF Micro Devices, Inc.
Inventor： Nadim Khlat , Michael R. Kay , Manbir Singh Nag
Abstract: A parallel amplifier and an offset capacitance voltage control loop are disclosed. The parallel amplifier has a parallel amplifier output, which is coupled to an envelope tracking power supply output via an offset capacitive element. The offset capacitive element has an offset capacitive voltage. The offset capacitance voltage control loop regulates the offset capacitive voltage, which is adjustable on a communications slot-to-communications slot basis.
-
52.发明申请RADIO FREQUENCY FRONT END CIRCUITRY WITH IMPROVED PRIMARY TRANSMIT SIGNAL ISOLATION 有权无线电频率前端电路与改进的主发射信号隔离公开(公告)号：US20160336972A1
公开(公告)日：2016-11-17
申请号：US15083791
申请日：2016-03-29
Applicant: RF Micro Devices, Inc.
Inventor： Nadim Khlat , Marcus Granger-Jones
CPC classification number: H04B1/006 , H04B1/3805 , H04B1/48 , H04B7/0602 , H04B7/0805
Abstract: RF front end circuitry includes primary transceiver circuitry associated with a primary antenna and secondary receiver circuitry associated with a secondary antenna. Generally, the primary transceiver circuitry and the primary antenna are located on one end of a mobile communications device, while the secondary receiver circuitry and the secondary antenna are located at an opposite end of the device. Cross-coupling connection lines run between the antenna switching circuitry for the primary antenna and the secondary antenna, and are reused to send a portion of primary RF transmit signals from the primary transceiver circuitry to the secondary receiver circuitry so that primary RF transmit signals coupled into the secondary receiver path via antenna-to-antenna coupling can be reduced.
Abstract translation: RF前端电路包括与主天线相关联的主收发器电路和与辅助天线相关联的辅助接收器电路。 通常，主收发器电路和主天线位于移动通信设备的一端，而辅助接收器电路和辅助天线位于设备的相对端。 交叉耦合连接线在用于主天线的天线切换电路和次天线之间运行，并且被重用以将主要RF发射信号的一部分从主收发器电路发送到次级接收机电路，使得主RF发射信号耦合到 可以减少通过天线到天线耦合的次级接收机路径。
-
53.发明申请公开(公告)号：US20160336254A1
公开(公告)日：2016-11-17
申请号：US14937550
申请日：2015-11-10
Applicant: RF Micro Devices, Inc.
Inventor： Tarak A. Railkar
IPC: H01L23/373 , H01L21/48 , H01L23/00
CPC classification number: H01L23/3736 , H01L21/4871 , H01L21/4882 , H01L23/3677 , H01L24/83 , H01L2224/8385
Abstract: The present disclosure relates to a substrate with an embedded sintered heat spreader and a process for making the same. According to an exemplary process, at least one cavity is created through the substrate. Sinterable paste including metal particulates and binder material is then dispensed into the at least one cavity. Next, the sinterable paste is sintered to create a sintered heat spreader, which is characterized by high thermal conductivity. The sintered heat spreader adheres to the inside walls of the at least one cavity, enhancing the overall thermal conductivity of the substrate.
Abstract translation: 本发明涉及具有嵌入式烧结散热器的基板及其制造方法。 根据示例性工艺，通过衬底产生至少一个空腔。 然后将包括金属微粒和粘合剂材料的可烧结糊剂分配到至少一个空腔中。 接下来，将可烧结糊料烧结以产生热导率高的烧结散热器。 烧结散热器附着在至少一个空腔的内壁上，增强了基板的整体导热性。
-
公开(公告)号：US20160323080A1
公开(公告)日：2016-11-03
申请号：US14991090
申请日：2016-01-08
Applicant: RF Micro Devices, Inc.
Inventor： Nadim Khlat
CPC classification number: H04B7/0413 , H04B1/0057 , H04B1/38 , H04B7/0602 , H04B7/0802 , H04L5/001 , H04L5/0041
Abstract: Radio frequency (RF) front end circuitry includes RF filtering circuitry with first multiplexer circuitry and second multiplexer circuitry. The first multiplexer circuitry is used to pass primary RF transmit and receive signals within one or more frequency division duplexing (FDD) operating bands and diversity multiple-input-multiple-output (MIMO) receive signals within one or more time division duplexing (TDD) operating bands between transceiver circuitry and one or more antennas. The second multiplexer circuitry is used to pass primary RF transmit and receive signals within the one or more TDD operating bands and diversity MIMO receive signals within the one or more FDD operating bands between the transceiver circuitry and the one or more antennas.
Abstract translation: 射频（RF）前端电路包括具有第一多路复用器电路和第二多路复用器电路的RF滤波电路。 第一多路复用器电路用于在一个或多个时分双工（TDD）中的一个或多个频分双工（FDD）操作频带和分集多输入多输出（MIMO）接收信号内传送主RF发射和接收信号， 收发器电路和一个或多个天线之间的工作频带。 第二多路复用器电路用于在一个或多个TDD操作频带内传送主RF发射和接收信号，并在收发器电路和一个或多个天线之间的一个或多个FDD操作频带内分集MIMO接收信号。
-
公开(公告)号：US09479118B2
公开(公告)日：2016-10-25
申请号：US14254215
申请日：2014-04-16
Applicant: RF Micro Devices, Inc.
Inventor： Nadim Khlat , Baker Scott , Michael R. Kay
CPC classification number: H03F1/0227 , H03F1/0266 , H03F3/19 , H03F3/195 , H03F3/245 , H03F2200/432 , H03F2200/451 , H03F2200/555
Abstract: Power supply circuitry, which includes a parallel amplifier and a parallel amplifier power supply, is disclosed. The power supply circuitry operates in either an average power tracking mode or an envelope tracking mode. The parallel amplifier power supply provides a parallel amplifier power supply signal. The parallel amplifier regulates an envelope power supply voltage based on an envelope power supply control signal using the parallel amplifier power supply signal, which provides power for amplification. During the envelope tracking mode, the envelope power supply voltage at least partially tracks an envelope of an RF transmit signal and the parallel amplifier power supply signal at least partially tracks the envelope power supply control signal. During the average power tracking mode, the envelope power supply voltage does not track the envelope of the RF transmit signal.
Abstract translation: 公开了包括并联放大器和并行放大器电源的电源电路。 电源电路在平均功率跟踪模式或包络跟踪模式下工作。 并联放大器电源提供并联放大器电源信号。 并联放大器基于包络电源控制信号，使用并联放大器电源信号来调节包络电源电压，该信号提供放大功率。 在包络跟踪模式期间，信封电源电压至少部分地跟踪RF发射信号的包络，并且并行放大器电源信号至少部分地跟踪包络电源控制信号。 在平均功率跟踪模式期间，包络电源电压不跟踪RF发射信号的包络。
-
Patent Agency Ranking
56.发明授权Radio frequency (RF) microelectromechanical systems (MEMS) devices with gold-doped silicon 有权具有掺杂金的硅的射频（RF）微机电系统（MEMS）器件公开(公告)号：US09475692B2
公开(公告)日：2016-10-25
申请号：US14805774
申请日：2015-07-22
Applicant: RF Micro Devices, Inc.
Inventor： Julio C. Costa , Michael Carroll , Jonathan Hale Hammond
CPC classification number: B81B7/0064 , H01H1/0036
Abstract: The present disclosure relates to radio frequency (RF) microelectromechanical system (MEMS) device packaging, and specifically to reducing harmonic distortion caused by such packaging. In one embodiment, a die is provided that employs a gold-doped silicon substrate, wherein at least one RF MEMS device is disposed on the gold-doped silicon substrate. By employing the gold-doped silicon substrate, the packaging can achieve an exceptionally high resistivity without any additional expensive components, wherein the high resistivity has an associated low carrier lifetime. Notably, the low carrier lifetime corresponds to reduced harmonic distortion generated by the gold-doped silicon substrate, even when operating at high power. Thus, the gold-doped silicon substrate provides a less expensive packaging in which to place RF MEMS devices, wherein the packaging is capable of operating at high power with reduced harmonic distortion.
Abstract translation: 本公开涉及射频（RF）微机电系统（MEMS）设备封装，并且具体涉及减少由这种封装引起的谐波失真。 在一个实施例中，提供一种使用金掺杂硅衬底的管芯，其中至少一个RF MEMS器件设置在掺金硅衬底上。 通过采用金掺杂硅衬底，封装可以实现非常高的电阻率，而没有任何额外的昂贵的组件，其中高电阻率具有相关联的低载流子寿命。 值得注意的是，低载流子寿命对应于由金掺杂硅衬底产生的减少的谐波失真，即使在高功率下操作。 因此，金掺杂硅衬底提供了一种较便宜的封装，其中放置RF MEMS器件，其中封装能够以较低功率运行并减少谐波失真。
-
57.发明申请DECOUPLING LOOP FOR REDUCING UNDESIRED MAGNETIC COUPLING BETWEEN INDUCTORS, AND RELATED METHODS AND DEVICES 有权用于减少电感之间的无磁耦合的解耦环，以及相关方法和装置公开(公告)号：US20160276097A1
公开(公告)日：2016-09-22
申请号：US15074121
申请日：2016-03-18
Applicant: RF Micro Devices, Inc.
Inventor： Timothy D. Lewis
CPC classification number: H03F3/211 , H01F17/0006 , H01F27/2804 , H01F27/289 , H01F27/38 , H03F2200/537
Abstract: Devices and related methods use a decoupling loop near closely spaced inductors that couples to each inductor and adds an additional coupling path between them, canceling the effects of the direct coupling between the inductors. When two inductors are close enough that undesired magnetic coupling between the inductors is possible, a decoupling loop adjacent the inductors is added that is configured to cancel the undesired magnetic coupling between the inductors. The decoupling loop is positioned, with respect to the first and second inductors, such that coupling between the decoupling loop and the first inductor induces a decoupling loop current around the decoupling loop and induces a second induced current on the second inductor that is equal and in an opposite direction to a first induced current on the second inductor caused by the first inductor. The undesired magnetic coupling between the conductors is reduced, and may even be totally cancelled.
Abstract translation: 器件和相关方法使用紧密间隔的电感器附近的去耦环路，其耦合到每个电感器并且在它们之间增加额外的耦合路径，消除了电感器之间的直接耦合的影响。 当两个电感器足够接近以致电感器之间的不期望的磁耦合是可能的时，增加了与电感器相邻的去耦环路，其被配置为消除电感器之间的不需要的磁耦合。 解耦环相对于第一和第二电感器被定位，使得去耦环和第一电感之间的耦合在解耦环周围引起去耦环电流，并且在第二电感上引起第二感应电流，其等于和 与由第一电感器引起的第二电感器上的第一感应电流相反的方向。 导体之间不期望的磁耦合减小，甚至可能完全消除。
-
公开(公告)号：US09444417B2
公开(公告)日：2016-09-13
申请号：US14555053
申请日：2014-11-26
Applicant: RF Micro Devices, Inc.
Inventor： George Maxim , Baker Scott , Dirk Robert Walter Leipold
IPC: H04B1/04 , H03F3/24 , H01F17/00 , H03H7/09 , H03H7/01 , H03F1/56 , H03F3/195 , H03F3/68 , H04B1/18 , H04B1/48
CPC classification number: H03F3/245 , H01F17/0013 , H03F1/56 , H03F3/195 , H03F3/68 , H03F2200/222 , H03F2200/387 , H03F2200/451 , H03F2200/546 , H03H7/0115 , H03H7/0161 , H03H7/09 , H04B1/0458 , H04B1/18 , H04B1/48
Abstract: RF communications circuitry, which includes a first group of RF power amplifier circuits and a first weakly coupled RF network, is disclosed. The first group of RF power amplifier circuits includes a first RF power amplifier circuit, which receives and amplifies a first RF amplifier input signal to provide a first RF amplifier output signal, and a second RF power amplifier circuit, which receives and amplifies a second RF amplifier input signal to provide a second RF amplifier output signal. The first weakly coupled RF network includes a first pair of weakly coupled RF resonators coupled to the first RF power amplifier circuit and a second pair of weakly coupled RF resonators coupled to the second RF power amplifier circuit.
Abstract translation: 公开了RF通信电路，其包括第一组RF功率放大器电路和第一弱耦合RF网络。 第一组RF功率放大器电路包括第一RF功率放大器电路，其接收和放大第一RF放大器输入信号以提供第一RF放大器输出信号，以及第二RF功率放大器电路，其接收和放大第二RF 放大器输入信号提供第二个RF放大器输出信号。 第一弱耦合RF网络包括耦合到第一RF功率放大器电路的第一对弱耦合RF谐振器和耦合到第二RF功率放大器电路的第二对弱耦合RF谐振器。
-
公开(公告)号：US09423433B2
公开(公告)日：2016-08-23
申请号：US14599674
申请日：2015-01-19
Applicant: RF Micro Devices, Inc.
Inventor： Douglas Andrew Teeter , Ming Ji , Praveen Varma Nadimpalli
CPC classification number: G01R21/10 , H03F3/195 , H03F3/245 , H03F2200/204 , H03F2200/411 , H03F2200/451 , H03F2200/465 , H03F2200/541 , H03G3/3036
Abstract: An RF electronics module includes a grounding plate, a non-conductive substrate, a number of conductive vias, RF PA circuitry, and RF power detection circuitry. The non-conductive substrate is over the grounding plate. The conductive vias extend parallel to one another from a surface of the non-conductive substrate opposite the grounding plate through the non-conductive substrate to the grounding plate. The RF PA circuitry is coupled to the grounding plate through a first one of the conductive vias. The RF power detection circuitry is coupled to a second one of the conductive vias and configured to measure a signal induced in the second one of the conductive vias due to electromagnetic coupling with the first one of conductive vias. The first one of the conductive vias is adjacent to the second one of the conductive vias.
Abstract translation: RF电子模块包括接地板，非导电衬底，多个导电通孔，RF PA电路和RF功率检测电路。 非导电衬底在接地板上。 导电通孔从与非接触板相对的非导电衬底的表面通过非导电衬底彼此平行地延伸到接地板。 RF PA电路通过第一导电通孔耦合到接地板。 RF功率检测电路耦合到导电通孔中的第二个，并且被配置为测量由于与第一导电通孔的电磁耦合而在第二导电通孔中感应的信号。 导电通孔中的第一个与第二个导电通孔相邻。
-
60.发明申请RF AMPLIFICATION DEVICE WITH POWER PROTECTION DURING HIGH SUPPLY VOLTAGE CONDITIONS 有权在高电压条件下具有电源保护功能的射频放大器件公开(公告)号：US20160241200A1
公开(公告)日：2016-08-18
申请号：US15140605
申请日：2016-04-28
Applicant: RF Micro Devices, Inc.
Inventor： Praveen V. Nadimpalli , David Ngo
CPC classification number: H03F1/0222 , G05F1/561 , H03F1/523 , H03F3/19 , H03F3/21 , H03F2200/258 , H03F2200/408 , H03F2200/451 , H03F2203/21193
Abstract: A radio frequency (RF) amplification device comprises an RF amplification circuit, and a dynamic level shifter (DLS) circuit coupled between a supply voltage and the RF amplification circuit. The DLS circuit is configured to provide a first shifted voltage to the RF amplification circuit via a first diode when the supply voltage is above a first threshold voltage level. The DLS circuit is further configured to provide a second shifted voltage to the RF amplification circuit via a first shunt transistor when the supply voltage is below the first threshold voltage level, wherein the supply voltage less the second shifted voltage is less than the supply voltage less the first shifted voltage.
Abstract translation: 射频（RF）放大装置包括RF放大电路和耦合在电源电压和RF放大电路之间的动态电平移位器（DLS）电路。 DLS电路被配置为当电源电压高于第一阈值电压电平时，经由第一二极管向RF放大电路提供第一移位电压。 DLS电路还被配置为当电源电压低于第一阈值电压电平时，经由第一分流晶体管向RF放大电路提供第二移位电压，其中小于第二移位电压的电源电压小于电源电压 第一个移位电压。
-
-
-
-
-
-
-
-
-
Search Results
710
records
(took 0.029 seconds)
