公开(公告)号：US20230081295A1

公开(公告)日：2023-03-16

申请号：US17942786

申请日：2022-09-12

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Masaaki FURUYA ,  Hiroaki KOBAYASHI ,  Hideki MORI

IPC: B05C11/10 ,  B05C11/11

Abstract: A supply device includes a collect tank which collects a process liquid from a substrate processing device and heats the collected liquid, and a supply tank connected to the collect tank and which supplies, to the substrate processing device, the process liquid heated in the collect tank. The collect tank includes a collect container that stores the process liquid, a first dividing plate that divides the collect container into a first region where the process liquid is introduced from the substrate processing device, and a second region that introduces the process liquid to the supply tank, piping that feeds, to the second region, the process liquid introduced in the first region, a first heater provided on a path through the piping and which heats the process liquid, and feed piping that feeds, to the supply tank, the process liquid in the second region and heated by the first heater.

公开(公告)号：US20220248502A1

公开(公告)日：2022-08-04

申请号：US17582298

申请日：2022-01-24

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Yuichi IMAOKA ,  Yosuke MOCHIZUKI ,  Kyota KUROIWA ,  Akinori ISO

IPC: H05B3/22

Abstract: According to an embodiment of the present disclosure, a heat treatment device includes: a chamber capable of maintaining an atmosphere that is decompressed from an atmospheric pressure; an exhaust unit capable of exhausting an inside of the chamber through an exhaust port provided in the chamber; a support portion provided inside the chamber and capable of supporting a workpiece; a first heating unit provided inside the chamber and capable of heating the workpiece; an adhesion preventive plate detachably provided on an inner wall of the chamber; and a second heating unit capable of heating the adhesion preventive plate.

公开(公告)号：US11322384B2

公开(公告)日：2022-05-03

申请号：US17034173

申请日：2020-09-28

Applicant: SHIN-ETSU ENGINEERING CO., LTD. ,  SHIBAURA MECHATRONICS CORPORATION

Inventor： Shunya Kubota ,  Emi Matsui ,  Katsuhiro Yamazaki ,  Yoshikazu Ohtani ,  Kyouhei Tomioka

IPC: H01L21/67 ,  H01L21/683

Abstract: According to one embodiment, a substrate processing apparatus and a substrate processing method that can improve the quality of substrates are provided. The substrate processing apparatus according to one embodiment includes: a table 20 configured to support a processing target W including a substrate W1, a ring W2 surrounding a surrounding of the substrate W1, and a dicing tape W3 adhered to a lower surface of the substrate W1 and a lower surface of the ring W2, and a liquid supplier 50 configured to eject a liquid which does not mix with a processing liquid for processing the substrate W1 and which has a specific gravity heavier than the processing liquid to one of an upper surface of the ring W2 of the processing target W supported by the table 20 rotating by the rotation mechanism 30, an outer circumference end portion of the substrate W1 of the processing target W supported by the table 20 rotating by the rotation mechanism 30, and between the substrate W1 and the ring W2 of the processing target W supported by the table 20 rotating by the rotation mechanism in accordance with a rotation number of the table 20 to supply the liquid between the substrate W1 and the ring W2 of the processing target W.

公开(公告)号：US20220068671A1

公开(公告)日：2022-03-03

申请号：US17460566

申请日：2021-08-30

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Kensuke DEMURA ,  Daisuke MATSUSHIMA ,  Masaya KAMIYA

IPC: H01L21/67 ,  H01L21/687

Abstract: A substrate processing apparatus according to an embodiment of the present disclosure includes: a stage; a plurality of holders configured to hold a substrate; a liquid supply configured to supply a liquid to a surface of the substrate opposite to the stage; a cooler configured to supply a cooling gas to a space between the stage and the substrate; a mover configured to change a distance between the stage and the substrate; and a controller configured to control the cooler and the mover. The controller performs a cooling process that at least includes a supercooling process and a freezing process (solid-liquid phase), and a thawing process after the cooling process. In the cooling process, the controller controls the mover to set the distance to a first distance, and in the thawing process, the controller controls the mover to set the distance to a second distance longer than the first distance.

公开(公告)号：US11203215B2

公开(公告)日：2021-12-21

申请号：US17026427

申请日：2020-09-21

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Azusa Hirano ,  Hironori Haijima ,  Junpei Tanaka

IPC: B41F17/36 ,  B41J3/407 ,  B41J29/393 ,  B41J13/08 ,  B41J13/10 ,  B41M5/00 ,  A61J3/00

Abstract: A tablet printing apparatus 1 includes an inspection unit 53 determining whether or not the printed tablet T is good product, a good product collecting device 43 collecting the tablet T of the good product from the carrying belt 31a, a defective product collecting device 41 collecting the tablet other than the good product from the carrying belt 31a, a discharge confirming sensor 41c detecting whether or not the tablet other than the good tablet is collected by the defective product collecting device 41, and a re-inspection product collecting device 42 collecting the tablet T other than the good product from the carrying belt 31 a when a collecting operation for collecting the tablet T other than the good product is performed by the defective product collecting device 41, and the discharge confirming sensor 41c detects that the tablet T other than the good tablet is not collected.

公开(公告)号：US11193850B2

公开(公告)日：2021-12-07

申请号：US16587737

申请日：2019-09-30

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Masataka Yokoi ,  Nobuo Kobayashi ,  Masaaki Furuya ,  Atsushi Kinase

IPC: G01M3/28 ,  H05B3/06 ,  G01M3/00

Abstract: A gas leak detecting device of a heater pipe and a gas leak detecting method of a heater pipe, which are able to reliably detect a leak of gas from a heater pipe in which a fine hole is formed. A gas leak detecting device of a heater pipe, which is provided with an inside pipe housing a heater element and an outside pipe sealed surrounding the inside pipe and which is adjusted by a pressure adjustment mechanism in gas pressure in a space between the outside pipe and the inside pipe to a predetermined pressure value. The gas leak detecting device includes a gas flow resistance part, a pressure detection unit, and a leak judging device that judges whether gas is leaking from the heater pipe based on a detected pressure value obtained by the pressure detection unit.

公开(公告)号：US20210276055A1

公开(公告)日：2021-09-09

申请号：US17181227

申请日：2021-02-22

Applicant: Shibaura Mechatronics Corporation

Inventor： Minami NAKAMURA ,  Daisuke MATSUSHIMA ,  Kensuke DEMURA

IPC: B08B7/00 ,  G03F7/20 ,  B08B7/04 ,  B08B3/10 ,  H01L21/67 ,  H01L21/687

Abstract: According to one embodiment, a substrate treatment device includes a placement stand configured to rotate a substrate, a cooling part configured to supply a cooling gas into a space between the placement stand and the substrate, a liquid supplier configured to supply a liquid on a surface of the substrate opposite to the placement stand side, a detector configured to detect a state of the liquid on the surface of the substrate, and a controller controlling at least one of a rotation speed of the substrate, a flow rate of the cooling gas, or a supply amount of the liquid. The controller sets the liquid on the surface of the substrate to be in a supercooled state, obtains a temperature of the liquid in the supercooled state at a start of freezing, and is configured to calculate a removal ratio of a contamination.

公开(公告)号：US11011475B2

公开(公告)日：2021-05-18

申请号：US16564008

申请日：2019-09-09

Applicant: KABUSHIKI KAISHA TOSHIBA ,  SHIBAURA MECHATRONICS CORPORATION

Inventor： Akira Kikitsu ,  Yoshinari Kurosaki ,  Kenichiro Yamada ,  Shigeki Matsunaka

IPC: H01L23/552 ,  H01L43/02

Abstract: According to one embodiment, an electromagnetic wave attenuator includes a multilayer member, and a magnetic member. The multilayer member includes a plurality of magnetic layers and a plurality of nonmagnetic layers. The plurality of nonmagnetic layers is conductive. A direction from one of the plurality of magnetic layers toward an other one of the plurality of magnetic layers is aligned with a first direction from the multilayer member toward the magnetic member. One of the plurality of nonmagnetic layers is between the one of the plurality of magnetic layers and the other one of the plurality of magnetic layers. A thickness along the first direction of the magnetic member is not less than ½ of a thickness along the first direction of the multilayer member.

公开(公告)号：US11004665B2

公开(公告)日：2021-05-11

申请号：US15941817

申请日：2018-03-30

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Yoshio Kawamata ,  Daisuke Ono

IPC: H01J37/34 ,  H01J37/32 ,  H01L21/687 ,  H01L21/02 ,  H01L21/285

Abstract: A plasma processing apparatus includes a vacuum container, a conveyance unit including a rotator and circulating and carrying a workpiece through the conveyance path, a cylindrical member having an opening at one end extended in the direction toward the conveyance path, a window member provided at the cylindrical member, and dividing a gas space from the exterior thereof, a supply unit supplying the process gas in the gas space, and an antenna generating inductive coupling plasma on the workpiece. The supply unit supplies the process gas from plural locations where a passing time at which the surface of the rotator passes through a process region is different, and the plasma processing apparatus further includes an adjusting unit individually adjusting the supply amounts of the process gas from the plural locations of the supply unit per a unit time in accordance with the passing time.

公开(公告)号：US10903059B2

公开(公告)日：2021-01-26

申请号：US16123709

申请日：2018-09-06

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Daisuke Ono ,  Yu Kambe

IPC: C23C14/34 ,  H01J37/34 ,  H01J37/32 ,  C23C14/00 ,  C23C14/50 ,  H01L21/687 ,  C23C14/08 ,  H01L21/02 ,  H01L21/285

Abstract: A film formation apparatus includes a chamber which has an interior capable of being vacuumed, and which includes a lid that is openable and closable on the upper part of the chamber, a rotation table which is provided in the chamber and which and carries a workpiece in the circular trajectory, a film formation unit that deposits film formation materials by sputtering on the workpiece carried by the rotation table to form films, a shielding member which is provided with an opening at the side which the workpiece passes through, and which forms a film formation room where the film formations by the film formation units are performed, and a support which supports the shielding member, and which is independent relative to the chamber and is independent from the lid.