COLD THERMAL CHEMICAL VAPOR DEPOSITION
    52.
    发明公开

    公开(公告)号:US20240117495A1

    公开(公告)日:2024-04-11

    申请号:US17768249

    申请日:2020-10-13

    申请人: SILCOTEK CORP.

    摘要: Cold thermal chemical vapor deposition coatings, articles, and processes are disclosed. Specifically, a cold thermal chemical vapor deposition process includes positioning an article, heating a precursor gas to at least a decomposition temperature of the precursor gas to produce a deposition gas, introducing the deposition gas to a coating vessel, and depositing a coating from the deposition gas onto the article within the coating vessel. The article remains at a temperature below the decomposition temperature throughout the introducing and depositing of the deposition gas. The coating on the article has a gradient formed by the depositing of the coating having no flow for a period of time. The coated article includes a thermally-sensitive substrate (the thermally-sensitive substrate capable of being modified by a temperature of 300 degrees Celsius) and a coating the thermally-sensitive substrate.

    Chemical vapor deposition process and coated article

    公开(公告)号:US11261524B2

    公开(公告)日:2022-03-01

    申请号:US16379236

    申请日:2019-04-09

    申请人: SILCOTEK CORP.

    IPC分类号: C23C16/44 B32B15/00 H01L21/02

    摘要: Chemical vapor deposition processes and coated articles are disclosed. The process includes a first introducing of a first amount of silane to the enclosed chamber, the first amount of the silane remaining within the enclosed chamber for a first period of time, a first decomposing of the first amount of the silane during at least a portion of the first period of time, a second introducing of a second amount of the silane to the enclosed chamber, the second amount of the silane remaining within the enclosed chamber for a second period of time, and a second decomposing of the second amount of the silane during at least a portion of the second period of time. The process is devoid of inert gas purging between the first decomposing and the second introducing and/or produces a chemical vapor deposition coating devoid of hydrogen bubbles.

    NANO-WIRE GROWTH
    56.
    发明申请

    公开(公告)号:US20210087708A1

    公开(公告)日:2021-03-25

    申请号:US17115238

    申请日:2020-12-08

    申请人: SILCOTEK CORP.

    发明人: Min YUAN

    摘要: Nano-wire growth processes, nano-wires, and articles having nano-wires are disclosed. The nano-wire growth process includes trapping growth-inducing particles on a substrate, positioning the substrate within a chamber, closing the chamber, applying a vacuum to the chamber, introducing a precursor gas to the chamber, and thermally decomposing the precursor gas. The thermally decomposing of the precursor gas grows nano-wires from the growth-inducing particles. The nano-wires and the articles having the nano-wires are produced by the nano-wire growth process.

    Silicon-nitride-containing thermal chemical vapor deposition coating

    公开(公告)号:US10851455B2

    公开(公告)日:2020-12-01

    申请号:US16121994

    申请日:2018-09-05

    申请人: SILCOTEK CORP.

    摘要: Surfaces, articles, and processes having silicon-nitride-containing thermal chemical vapor deposition coating are disclosed. A process includes producing a silicon-nitride-containing thermal chemical vapor deposition coating on a surface within a chamber. Flow into and from the chamber is restricted or halted during the producing of the silicon-nitride-containing thermal chemical vapor deposition coating on the surface. A surface includes a silicon-nitride-containing thermal chemical vapor deposition coating. The surface has at least a concealed portion that is obstructed from view. An article includes a silicon-nitride-containing thermal chemical vapor deposition coating on a surface within a chamber. The surface has at least a concealed portion that is obstructed from view.

    LIQUID CHROMATOGRAPHY SYSTEM AND COMPONENT
    58.
    发明申请

    公开(公告)号:US20200263296A1

    公开(公告)日:2020-08-20

    申请号:US16870034

    申请日:2020-05-08

    申请人: SILCOTEK CORP.

    发明人: Gary A. BARONE

    IPC分类号: C23C16/455 C23C16/24

    摘要: Liquid chromatography systems and liquid chromatography components are disclosed. In an embodiment, a liquid chromatography system includes a liquid chromatography component. The liquid chromatography component includes a substrate and an amorphous coating on the substrate. The amorphous coating has a base layer and a surface layer. The base layer includes carboxysilane.

    CHEMICAL VAPOR DEPOSITION PROCESS AND COATED ARTICLE

    公开(公告)号:US20190309414A1

    公开(公告)日:2019-10-10

    申请号:US16379236

    申请日:2019-04-09

    申请人: SILCOTEK CORP.

    IPC分类号: C23C16/44

    摘要: Chemical vapor deposition processes and coated articles are disclosed. The process includes a first introducing of a first amount of silane to the enclosed chamber, the first amount of the silane remaining within the enclosed chamber for a first period of time, a first decomposing of the first amount of the silane during at least a portion of the first period of time, a second introducing of a second amount of the silane to the enclosed chamber, the second amount of the silane remaining within the enclosed chamber for a second period of time, and a second decomposing of the second amount of the silane during at least a portion of the second period of time. The process is devoid of inert gas purging between the first decomposing and the second introducing and/or produces a chemical vapor deposition coating devoid of hydrogen bubbles.

    COATED ARTICLE
    60.
    发明申请
    COATED ARTICLE 审中-公开

    公开(公告)号:US20190169750A1

    公开(公告)日:2019-06-06

    申请号:US15895566

    申请日:2018-02-13

    申请人: SILCOTEK CORP.

    摘要: Coated articles are disclosed. One embodiment of a coated article includes a substrate capable of being subjected to corrosion and a deposited coating on the substrate. The deposited coating has silicon with the substrate resisting corrosion with the deposited coating on the substrate when exposed to 15% NaClO by a rate of at least 5% greater than the corrosion rate of a coating applied with the same process but without introducing the deposition gas at the sub-decomposition temperature and/or the substrate with the deposited coating having a 15% NaClO corrosion rate of between 0 and 3 mils per year.