Semiconductor device and method for fabricating the same
    51.
    发明授权
    Semiconductor device and method for fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号:US06518169B1

    公开(公告)日:2003-02-11

    申请号:US09708082

    申请日:2000-11-08

    IPC分类号: H01L214763

    摘要: A plurality of metal interconnections are formed on a semiconductor substrate. The semiconductor substrate is held on a sample stage in a reactor chamber of a plasma processing apparatus and a material gas containing C5F8, C3F6, or C4F6 as a main component is introduced into the reactor chamber, so that a first fluorine-containing organic film having cavities at positions between the metal interconnections is deposited between the metal interconnections and on the top surfaces of the metal interconnections.

    摘要翻译: 多个金属互连形成在半导体衬底上。 将半导体基板保持在等离子体处理装置的反应室中的样品台上,将含有作为主要成分的C5F8,C3F6或C4F6的原料气体引入到反应室中,从而使第一含氟有机膜具有 在金属互连之间的位置处的空腔沉积在金属互连之间和金属互连的顶表面上。

    Piston ring
    52.
    发明授权
    Piston ring 失效
    活塞环

    公开(公告)号:US06508473B1

    公开(公告)日:2003-01-21

    申请号:US09669456

    申请日:2000-09-25

    IPC分类号: B60T11236

    摘要: A piston ring is made of martensitic stainless steel. Except for the outer circumferential surface of the piston ring, a nitrided layer having a Vickers hardness of 700 or more is formed on the upper and lower surfaces and inner circumferential surface, and a nitrided layer having a Vickers hardness of less than 700 is formed below the nitrided layer. A hard film is then formed by ion plating only on the outer circumferential surface of the piston ring. The hard film formed by ion plating and the nitrided layer with a Vickers hardness of 700 or more are separated without making contact in the vicinity of at least one of corner sections formed by the upper and lower surfaces and outer circumferential surface. The distance is within a range of 0.001 to 0.3 mm. The nitrided layers can be formed just on the upper and lower surfaces of the piston ring.

    摘要翻译: 活塞环由马氏体不锈钢制成。 除了活塞环的外周面之外,在上下表面和内周面上形成维氏硬度为700以上的渗氮层,维氏硬度小于700的氮化层形成在下方 氮化层。 然后通过仅在活塞环的外周面上的离子电镀形成硬膜。 通过离子镀形成的硬膜和维氏硬度为700以上的氮化层被分离,而不会在由上下表面和外周面形成的角部中的至少一个附近接触。 该距离在0.001至0.3mm的范围内。 氮化层可以刚好形成在活塞环的上表面和下表面上。

    2-(.gamma.-Aminopropyl)hydroquinones and process for producing the same
    55.
    发明授权
    2-(.gamma.-Aminopropyl)hydroquinones and process for producing the same 失效
    2 - ({65-氨基丙基)氢醌及其制备方法

    公开(公告)号:US3992449A

    公开(公告)日:1976-11-16

    申请号:US524836

    申请日:1974-11-18

    申请人: Shinichi Imai

    发明人: Shinichi Imai

    摘要: 1-(.gamma.-Aminopropyl)-2,5-dihydroxybenzene and derivatives thereof having additional substituents on the benzene nucleus, .beta.-(2,5-di-lower alkoxyphenyl)acrylonitriles and derivatives thereof having additional substituents on the benzene nucleus, and .gamma.-aminopropyl-2,5-di-lower alkoxybenzenes and derivatives thereof having additional substituents on the benzene nucleus and a process for producing 1-(.gamma.-aminopropyl)-2,5-dihydroxybenzene or derivatives thereof having additional substituents on the benzene nucleus which comprises reacting a 2,5-di-lower alkoxybenzaldehyde or a derivative thereof having additional substituents on the benzene nucleus in the 3-, 4- and/or 6-positions (wherein the substituents can be one or more of an alkyl group of 5 or less carbon atoms or a halogen atom) with cyanoacetic acid or an ester thereof to form a .beta.-(2,5-di-lower alkoxyphenyl)acrylonitrile or a derivative thereof having additional substituents on the benzene nucleus, catalytically reducing the product, with or without previously isolating the product, to form a .gamma.-aminopropyl-2,5-di-lower alkoxybenzene or a derivative thereof having additional substituents on the benzene nucleus, and then dealkylating the product obtained in the reduction, with or without previously isolating the product.

    摘要翻译: 1-(γ-氨基丙基)-2,5-二羟基苯及其在苯核上具有附加取代基的衍生物,β-(2,5-二低级烷氧基苯基)丙烯腈及其在苯核上具有另外取代基的衍生物,γ - 氨基丙基-2,5-二低级烷氧基苯及其在苯核上具有额外取代基的衍生物,以及在苯核上具有另外取代基的1-(γ-氨基丙基)-2,5-二羟基苯或其衍生物的制备方法, 包括在3-,4-和/或6-位上的苯核上具有另外的取代基的2,5-二低级烷氧基苯甲醛或其衍生物反应(其中取代基可以是一个或多个烷基5 或更少的碳原子或卤素原子)与氰基乙酸或其酯反应形成在苯核上具有额外取代基的β-(2,5-二低级烷氧基苯基)丙烯腈或其衍生物,催化 减少产物,在或不预先分离产物的情况下,形成在苯核上具有额外取代基的γ-氨基丙基-2,5-二 - 低级烷氧基苯或其衍生物,然后将还原得到的产物脱烷基化, 或者不先前隔离产品。

    Molded Surface Fastener
    56.
    发明申请
    Molded Surface Fastener 有权
    模压表面紧固件

    公开(公告)号:US20140298628A1

    公开(公告)日:2014-10-09

    申请号:US14354231

    申请日:2011-10-26

    IPC分类号: A44B18/00

    摘要: A surface fastener member includes left and right longitudinal protective wall sections and front and rear lateral protective wall sections. Each of the lateral protective wall sections includes an outer first lateral wall section and an inner second lateral wall section. The first lateral wall section includes a continuous lateral wall body which is continuously placed between the left and right longitudinal protective wall sections at a predetermined height. The second lateral wall section includes a plurality of divided lateral wall bodies which are intermittently placed along a width direction, and a plurality of second engagement elements. According to this, when the molded surface fastener is integrally molded on a cushion body, it is possible to prevent resin material from entering an engagement element region of the surface fastener member.

    摘要翻译: 表面紧固件包括左右纵向保护壁部分和前后侧面保护壁部分。 每个侧面保护壁部分包括外部第一侧壁部分和内部第二侧壁部分。 第一侧壁部分包括连续的侧壁体,其以预定高度连续地放置在左纵向保护壁部分和右纵向保护壁部分之间。 第二侧壁部分包括沿宽度方向间歇放置的多个分开的侧壁体和多个第二接合元件。 据此,当模制的表面紧固件整体地模制在缓冲体上时,可以防止树脂材料进入表面搭扣件的接合元件区域。

    Molding Hook and Loop Fastener
    58.
    发明申请
    Molding Hook and Loop Fastener 有权
    成型钩环紧固件

    公开(公告)号:US20130167332A1

    公开(公告)日:2013-07-04

    申请号:US13818661

    申请日:2010-08-23

    IPC分类号: A44B18/00

    摘要: Provided is a molding hook and loop fastener, in which a barrier erected near left and right side edges of a substrate includes at least two rows of vertical wall arrays, and the vertical wall array includes a plurality of vertical walls disposed alternately. Between the two adjacent, rows of the vertical walls disposed alternately, each of the vertical walls disposed on one row is connected to two vertical walls disposed on the other row via a connecting part, and the connecting part connects one end portion of one vertical wall disposed on the adjacent row and the other end portion of the other vertical wall. Due to this, in the molding hook and loop fastener an outer side and an inner side of the barrier can be divided by the vertical wall array and the connecting part, and flexibility of the molding hook and loop fastener can be improved.

    摘要翻译: 提供了一种成型钩环紧固件,其中在基板的左侧和右侧边缘附近竖立的屏障包括至少两排垂直壁阵列,并且垂直壁阵列包括交替布置的多个垂直壁。 在相邻的两排垂直壁之间交替布置的排,每排垂直壁通过连接部连接到设置在另一排上的两个垂直壁,连接部连接一个垂直壁的一个端部 设置在另一垂直壁的相邻行和另一端部。 因此,在成型钩环紧固件中,阻挡件的外侧和内侧可以由垂直壁阵列和连接部分分开,并且可以提高成型钩环紧固件的柔性。

    Method for fabricating semiconductor device
    59.
    发明授权
    Method for fabricating semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号:US07700477B2

    公开(公告)日:2010-04-20

    申请号:US11061625

    申请日:2005-02-22

    摘要: In a method for fabricating a semiconductor device, interconnect grooves are formed in an insulating film on a substrate, and then a copper film is formed on the insulating film to fill the interconnect grooves. Subsequently, portions of the copper film existing outside the interconnect grooves are polished to form interconnects, and then a cleaning process is performed on the resulting substrate. Thereafter, moisture remaining around a portion of the insulating film exposed between the interconnects is removed in a vacuum.

    摘要翻译: 在制造半导体器件的方法中,在基板上的绝缘膜中形成互连槽,然后在绝缘膜上形成铜膜以填充互连槽。 随后,将存在于互连槽外部的铜膜的部分抛光以形成互连,然后对所得衬底进行清洁处理。 此后,在真空中除去在互连线之间露出的绝缘膜的一部分周围残留的水分。

    Substrate processing apparatus and substrate processing method
    60.
    发明授权
    Substrate processing apparatus and substrate processing method 失效
    基板加工装置及基板处理方法

    公开(公告)号:US07559823B2

    公开(公告)日:2009-07-14

    申请号:US11902235

    申请日:2007-09-20

    IPC分类号: B24B49/00

    CPC分类号: H01L21/67219 B24B37/345

    摘要: The substrate processing apparatus relating to the present invention comprises a polishing section where wafers are sequentially arranged, and that has multiple polishing platens for polishing a metal film on the wafer surface in stages. The wafers are simultaneously conveyed between the polishing platens by a rotating head mechanism. Further, the wafers polished by the polishing platen for the final stage polishing are sequentially conveyed to a cleaning section and are cleaned. The wafers from the polishing section to the cleaning section are conveyed by a load-unload unit, a post-polishing wafer reversal unit and wet robots. Then, the operation of each part is controlled by an apparatus controller to start the cleaning processing of the polished wafers by the polishing platen for the final stage polishing within a predetermined time period from the completion of polishing by the polishing platen for the final stage polishing. With this control, corrosion to wiring containing corrodible metal, such as copper, can be assuredly prevented.

    摘要翻译: 本发明的基板处理装置包括:依次配置晶片的研磨部,具有分别在晶片表面上研磨金属膜的多个研磨台。 晶片通过旋转头机构在抛光台之间同时传送。 此外,将用于最后阶段研磨的由研磨台板抛光的晶片依次传送到清洁部分并进行清洁。 从抛光部分到清洁部分的晶片由卸载单元,后抛光晶片反转单元和湿机器人传送。 然后,由设备控制器控制每个部件的操作,以便在用于最终抛光的抛光台板的抛光完成之后的预定时间段内,通过用于最终抛光的抛光台板开始抛光晶片的清洁处理 。 通过该控制,可以可靠地防止对包含腐蚀性金属(例如铜)的布线的腐蚀。