摘要:
A plurality of metal interconnections are formed on a semiconductor substrate. The semiconductor substrate is held on a sample stage in a reactor chamber of a plasma processing apparatus and a material gas containing C5F8, C3F6, or C4F6 as a main component is introduced into the reactor chamber, so that a first fluorine-containing organic film having cavities at positions between the metal interconnections is deposited between the metal interconnections and on the top surfaces of the metal interconnections.
摘要:
A piston ring is made of martensitic stainless steel. Except for the outer circumferential surface of the piston ring, a nitrided layer having a Vickers hardness of 700 or more is formed on the upper and lower surfaces and inner circumferential surface, and a nitrided layer having a Vickers hardness of less than 700 is formed below the nitrided layer. A hard film is then formed by ion plating only on the outer circumferential surface of the piston ring. The hard film formed by ion plating and the nitrided layer with a Vickers hardness of 700 or more are separated without making contact in the vicinity of at least one of corner sections formed by the upper and lower surfaces and outer circumferential surface. The distance is within a range of 0.001 to 0.3 mm. The nitrided layers can be formed just on the upper and lower surfaces of the piston ring.
摘要:
A plasma processing apparatus includes a reaction chamber in which plasma is generated from a reactive gas introduced thereto and a film on a substrate is processed with the plasma generated. The main members of the reaction chamber are covered with protective members made of synthetic quartz.
摘要:
Photographic dye developing agents represented by the following formula (I): ##STR1## wherein A represents an anthraquinone dye moiety, X represents a hydrogen atom, an aliphatic hydrocarbon group, an alicyclic hydrocarbon group, an aryl group or a heterocyclic group, at least one of A and X contains an o-dihydroxyphenyl group or a p-dihydroxyphenyl group as a dye developing agent moiety, n is an integer of 1 to 4, and COY represents a group which is released from the nitrogen atom at a pH of above 9.
摘要:
1-(.gamma.-Aminopropyl)-2,5-dihydroxybenzene and derivatives thereof having additional substituents on the benzene nucleus, .beta.-(2,5-di-lower alkoxyphenyl)acrylonitriles and derivatives thereof having additional substituents on the benzene nucleus, and .gamma.-aminopropyl-2,5-di-lower alkoxybenzenes and derivatives thereof having additional substituents on the benzene nucleus and a process for producing 1-(.gamma.-aminopropyl)-2,5-dihydroxybenzene or derivatives thereof having additional substituents on the benzene nucleus which comprises reacting a 2,5-di-lower alkoxybenzaldehyde or a derivative thereof having additional substituents on the benzene nucleus in the 3-, 4- and/or 6-positions (wherein the substituents can be one or more of an alkyl group of 5 or less carbon atoms or a halogen atom) with cyanoacetic acid or an ester thereof to form a .beta.-(2,5-di-lower alkoxyphenyl)acrylonitrile or a derivative thereof having additional substituents on the benzene nucleus, catalytically reducing the product, with or without previously isolating the product, to form a .gamma.-aminopropyl-2,5-di-lower alkoxybenzene or a derivative thereof having additional substituents on the benzene nucleus, and then dealkylating the product obtained in the reduction, with or without previously isolating the product.
摘要:
A surface fastener member includes left and right longitudinal protective wall sections and front and rear lateral protective wall sections. Each of the lateral protective wall sections includes an outer first lateral wall section and an inner second lateral wall section. The first lateral wall section includes a continuous lateral wall body which is continuously placed between the left and right longitudinal protective wall sections at a predetermined height. The second lateral wall section includes a plurality of divided lateral wall bodies which are intermittently placed along a width direction, and a plurality of second engagement elements. According to this, when the molded surface fastener is integrally molded on a cushion body, it is possible to prevent resin material from entering an engagement element region of the surface fastener member.
摘要:
In order to provide a composition for treating, improving, or preventing pain, it has been found out that a metallothionein protein is expressed in a normal peripheral nerve, and that the expression is not observed in a peripheral nerve producing pain. Moreover, it has been found out that administering metallothionein to rats having neuropathic pain suppresses the pain in the rats.
摘要:
Provided is a molding hook and loop fastener, in which a barrier erected near left and right side edges of a substrate includes at least two rows of vertical wall arrays, and the vertical wall array includes a plurality of vertical walls disposed alternately. Between the two adjacent, rows of the vertical walls disposed alternately, each of the vertical walls disposed on one row is connected to two vertical walls disposed on the other row via a connecting part, and the connecting part connects one end portion of one vertical wall disposed on the adjacent row and the other end portion of the other vertical wall. Due to this, in the molding hook and loop fastener an outer side and an inner side of the barrier can be divided by the vertical wall array and the connecting part, and flexibility of the molding hook and loop fastener can be improved.
摘要:
In a method for fabricating a semiconductor device, interconnect grooves are formed in an insulating film on a substrate, and then a copper film is formed on the insulating film to fill the interconnect grooves. Subsequently, portions of the copper film existing outside the interconnect grooves are polished to form interconnects, and then a cleaning process is performed on the resulting substrate. Thereafter, moisture remaining around a portion of the insulating film exposed between the interconnects is removed in a vacuum.
摘要:
The substrate processing apparatus relating to the present invention comprises a polishing section where wafers are sequentially arranged, and that has multiple polishing platens for polishing a metal film on the wafer surface in stages. The wafers are simultaneously conveyed between the polishing platens by a rotating head mechanism. Further, the wafers polished by the polishing platen for the final stage polishing are sequentially conveyed to a cleaning section and are cleaned. The wafers from the polishing section to the cleaning section are conveyed by a load-unload unit, a post-polishing wafer reversal unit and wet robots. Then, the operation of each part is controlled by an apparatus controller to start the cleaning processing of the polished wafers by the polishing platen for the final stage polishing within a predetermined time period from the completion of polishing by the polishing platen for the final stage polishing. With this control, corrosion to wiring containing corrodible metal, such as copper, can be assuredly prevented.