公开(公告)号：US12291778B2

公开(公告)日：2025-05-06

申请号：US18743370

申请日：2024-06-14

Applicant: SILCOTEK CORP.

Inventor： Gary A. Barone

IPC: C23C16/24 ,  C23C16/455 ,  C23C16/04

Abstract: Liquid chromatography systems and liquid chromatography components are disclosed. In an embodiment, a liquid chromatography system includes a liquid chromatography component. The liquid chromatography component includes a substrate and an amorphous coating on the substrate. The amorphous coating has a base layer and a surface layer. The base layer includes carboxysilane.

公开(公告)号：US12037685B2

公开(公告)日：2024-07-16

申请号：US17411545

申请日：2021-08-25

Applicant: SILCOTEK CORP.

Inventor： Gary A. Barone

IPC: C23C16/24 ,  C23C16/455 ,  C23C16/04

CPC classification number: C23C16/45523 ,  C23C16/24 ,  C23C16/045

Abstract: Liquid chromatography systems and liquid chromatography components are disclosed. In an embodiment, a liquid chromatography system includes a liquid chromatography component. The liquid chromatography component includes a substrate and an amorphous coating on the substrate. The amorphous coating has a base layer and a surface layer. The base layer includes carboxysilane.

公开(公告)号：US20240117495A1

公开(公告)日：2024-04-11

申请号：US17768249

申请日：2020-10-13

Applicant: SILCOTEK CORP.

Inventor： Geoffrey K. WHITE ,  Nicholas P. DESKEVICH ,  James B. MATTZELA ,  Gary A. BARONE ,  David A. SMITH ,  Pierre A. LECLAIR ,  Min YUAN ,  Jesse BISCHOF

IPC: C23C16/52 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46

CPC classification number: C23C16/52 ,  C23C16/4404 ,  C23C16/45523 ,  C23C16/46

Abstract: Cold thermal chemical vapor deposition coatings, articles, and processes are disclosed. Specifically, a cold thermal chemical vapor deposition process includes positioning an article, heating a precursor gas to at least a decomposition temperature of the precursor gas to produce a deposition gas, introducing the deposition gas to a coating vessel, and depositing a coating from the deposition gas onto the article within the coating vessel. The article remains at a temperature below the decomposition temperature throughout the introducing and depositing of the deposition gas. The coating on the article has a gradient formed by the depositing of the coating having no flow for a period of time. The coated article includes a thermally-sensitive substrate (the thermally-sensitive substrate capable of being modified by a temperature of 300 degrees Celsius) and a coating the thermally-sensitive substrate.

公开(公告)号：US20230383126A1

公开(公告)日：2023-11-30

申请号：US18331647

申请日：2023-06-08

Applicant: SILCOTEK CORP.

Inventor： David A. SMITH ,  James B. MATTZELA ,  Paul H. SILVIS ,  Gary A. BARONE ,  Martin E. HIGGINS

IPC: C09D5/00 ,  C23C16/30 ,  C23C16/56 ,  C23C16/40 ,  C23C30/00 ,  C23C16/02 ,  C23C16/18

CPC classification number: C09D5/00 ,  C23C16/30 ,  C23C16/56 ,  C23C16/401 ,  Y10T428/31612 ,  C23C16/0272 ,  C23C16/18 ,  Y10T428/265 ,  Y10T428/31663 ,  C23C30/00

Abstract: Amorphous coatings and coated articles having amorphous coatings are disclosed. The amorphous coating comprises a first layer and a second layer, the first layer being proximal to a metal substate compared to the second layer, the second layer being distal from the metal substrate compared to the first layer. The first layer and the second layer comprise carbon, hydrogen, and silicon. The first layer further comprises oxygen.

公开(公告)号：US11292924B2

公开(公告)日：2022-04-05

申请号：US14680669

申请日：2015-04-07

Applicant: SILCOTEK CORP.

Inventor： David A. Smith ,  Min Yuan ,  James B. Mattzela ,  Paul H. Silvis

IPC: C09D5/16 ,  C23C16/44 ,  C23C16/56 ,  C23C16/02 ,  C23C16/30

Abstract: A coated article is disclosed. The article includes a coating formed by thermal decomposition, oxidation then functionalization. The article is configured for a marine environment, the marine environment including fouling features. The coating is resistant to the fouling features. Additionally or alternatively, the article is a medical device configured for a protein-containing environment, the protein-containing environment including protein adsorption features. The coating is resistant to the protein adsorption features.

公开(公告)号：US11261524B2

公开(公告)日：2022-03-01

申请号：US16379236

申请日：2019-04-09

Applicant: SILCOTEK CORP.

Inventor： Thomas F. Vezza ,  James B. Mattzela ,  Gary A. Barone ,  Jesse Bischof ,  David A. Smith

IPC: C23C16/44 ,  B32B15/00 ,  H01L21/02

Abstract: Chemical vapor deposition processes and coated articles are disclosed. The process includes a first introducing of a first amount of silane to the enclosed chamber, the first amount of the silane remaining within the enclosed chamber for a first period of time, a first decomposing of the first amount of the silane during at least a portion of the first period of time, a second introducing of a second amount of the silane to the enclosed chamber, the second amount of the silane remaining within the enclosed chamber for a second period of time, and a second decomposing of the second amount of the silane during at least a portion of the second period of time. The process is devoid of inert gas purging between the first decomposing and the second introducing and/or produces a chemical vapor deposition coating devoid of hydrogen bubbles.

公开(公告)号：US20210087708A1

公开(公告)日：2021-03-25

申请号：US17115238

申请日：2020-12-08

Applicant: SILCOTEK CORP.

Inventor： Min YUAN

IPC: C30B29/62 ,  C30B25/18 ,  C30B29/12 ,  C30B33/00 ,  C01B33/04

Abstract: Nano-wire growth processes, nano-wires, and articles having nano-wires are disclosed. The nano-wire growth process includes trapping growth-inducing particles on a substrate, positioning the substrate within a chamber, closing the chamber, applying a vacuum to the chamber, introducing a precursor gas to the chamber, and thermally decomposing the precursor gas. The thermally decomposing of the precursor gas grows nano-wires from the growth-inducing particles. The nano-wires and the articles having the nano-wires are produced by the nano-wire growth process.

公开(公告)号：US10851455B2

公开(公告)日：2020-12-01

申请号：US16121994

申请日：2018-09-05

Applicant: SILCOTEK CORP.

Inventor： Min Yuan ,  James B. Mattzela ,  David A. Smith

IPC: C23C16/00 ,  C23C16/34 ,  C23C16/04 ,  C23C16/455 ,  C23C16/30 ,  C23C16/56

Abstract: Surfaces, articles, and processes having silicon-nitride-containing thermal chemical vapor deposition coating are disclosed. A process includes producing a silicon-nitride-containing thermal chemical vapor deposition coating on a surface within a chamber. Flow into and from the chamber is restricted or halted during the producing of the silicon-nitride-containing thermal chemical vapor deposition coating on the surface. A surface includes a silicon-nitride-containing thermal chemical vapor deposition coating. The surface has at least a concealed portion that is obstructed from view. An article includes a silicon-nitride-containing thermal chemical vapor deposition coating on a surface within a chamber. The surface has at least a concealed portion that is obstructed from view.

公开(公告)号：US20200263296A1

公开(公告)日：2020-08-20

申请号：US16870034

申请日：2020-05-08

Applicant: SILCOTEK CORP.

Inventor： Gary A. BARONE

IPC: C23C16/455 ,  C23C16/24

Abstract: Liquid chromatography systems and liquid chromatography components are disclosed. In an embodiment, a liquid chromatography system includes a liquid chromatography component. The liquid chromatography component includes a substrate and an amorphous coating on the substrate. The amorphous coating has a base layer and a surface layer. The base layer includes carboxysilane.

公开(公告)号：US20190309414A1

公开(公告)日：2019-10-10

申请号：US16379236

申请日：2019-04-09

Applicant: SILCOTEK CORP.

Inventor： Thomas F. VEZZA ,  James B. MATTZELA ,  Gary A. BARONE ,  Jesse BISCHOF ,  David A. SMITH

IPC: C23C16/44

Abstract: Chemical vapor deposition processes and coated articles are disclosed. The process includes a first introducing of a first amount of silane to the enclosed chamber, the first amount of the silane remaining within the enclosed chamber for a first period of time, a first decomposing of the first amount of the silane during at least a portion of the first period of time, a second introducing of a second amount of the silane to the enclosed chamber, the second amount of the silane remaining within the enclosed chamber for a second period of time, and a second decomposing of the second amount of the silane during at least a portion of the second period of time. The process is devoid of inert gas purging between the first decomposing and the second introducing and/or produces a chemical vapor deposition coating devoid of hydrogen bubbles.