On-track process for patterning hardmask by multiple dark field exposures
    52.
    发明授权
    On-track process for patterning hardmask by multiple dark field exposures 有权
    通过多个暗场曝光对硬掩模进行图形化的轨道工艺

    公开(公告)号:US08415083B2

    公开(公告)日:2013-04-09

    申请号:US13114612

    申请日:2011-05-24

    摘要: This invention provides methods of creating via or trench structures on a developer-soluble hardmask layer using a multiple exposure-development process. The hardmask layer is patterned while the imaging layer is developed. After the imaging layer is stripped using organic solvents, the same hardmask can be further patterned using subsequent exposure-development processes. Eventually, the pattern can be transferred to the substrate using an etching process.

    摘要翻译: 本发明提供了使用多次曝光显影工艺在显影剂可溶硬化掩模层上产生通孔或沟槽结构的方法。 在成像层被开发的同时硬化掩模层被图案化。 在使用有机溶剂剥离成像层之后,可以使用随后的曝光显影工艺进一步图案化相同的硬掩模。 最终,可以使用蚀刻工艺将图案转移到衬底。

    METHOD OF MAKING RADIATION-SENSITIVE SOL-GEL MATERIALS
    54.
    发明申请
    METHOD OF MAKING RADIATION-SENSITIVE SOL-GEL MATERIALS 有权
    制造辐射敏感性溶胶凝胶材料的方法

    公开(公告)号:US20120264056A1

    公开(公告)日:2012-10-18

    申请号:US13443533

    申请日:2012-04-10

    IPC分类号: G03F7/075 G03F7/20

    摘要: Radiation-sensitive sol-gel compositions are provided, along with methods of forming microelectronic structures and the structures thus formed. The compositions comprise a sol-gel compound and a base generator dispersed or dissolved in a solvent system. The sol-gel compound comprises recurring monomeric units comprising silicon with crosslinkable moieties bonded to the silicon. Upon exposure to radiation, the base generator generates a strong base, which crosslinks the sol-gel compound in the compositions to yield a crosslinked layer that is insoluble in developers or solvents. The unexposed portions of the layer can be removed to yield a patterned sol-gel layer. The invention can be used to form patterns from sol-gel materials comprising features having feature sizes of less than about 1 μm.

    摘要翻译: 提供了辐射敏感的溶胶 - 凝胶组合物,以及形成微电子结构和如此形成的结构的方法。 组合物包含分散或溶解在溶剂体系中的溶胶 - 凝胶化合物和碱产生剂。 溶胶 - 凝胶化合物包括具有与硅结合的可交联部分的包含硅的重复单体单元。 暴露于辐射后,基底发生器产生强碱,其使组合物中的溶胶 - 凝胶化合物交联,得到不溶于显影剂或溶剂的交联层。 可以除去该层的未曝光部分以产生图案化的溶胶 - 凝胶层。 本发明可用于形成包含特征尺寸小于约1μm的特征的溶胶 - 凝胶材料的图案。

    On-track process for patterning hardmask by multiple dark field exposures
    55.
    发明授权
    On-track process for patterning hardmask by multiple dark field exposures 有权
    通过多个暗场曝光对硬掩模进行图形化的轨道工艺

    公开(公告)号:US08133659B2

    公开(公告)日:2012-03-13

    申请号:US12362268

    申请日:2009-01-29

    摘要: This invention provides methods of creating via or trench structures on a developer-soluble hardmask layer using a multiple exposure-development process. The hardmask layer is patterned while the imaging layer is developed. After the imaging layer is stripped using organic solvents, the same hardmask can be further patterned using subsequent exposure-development processes. Eventually, the pattern can be transferred to the substrate using an etching process.

    摘要翻译: 本发明提供了使用多次曝光显影工艺在显影剂可溶硬化掩模层上产生通孔或沟槽结构的方法。 在成像层被开发的同时硬化掩模层被图案化。 在使用有机溶剂剥离成像层之后,可以使用随后的曝光显影工艺进一步图案化相同的硬掩模。 最终,可以使用蚀刻工艺将图案转移到衬底。

    METHOD FOR REVERSIBLY MOUNTING A DEVICE WAFER TO A CARRIER SUBSTRATE
    56.
    发明申请
    METHOD FOR REVERSIBLY MOUNTING A DEVICE WAFER TO A CARRIER SUBSTRATE 有权
    用于将器件波形反向安装到载体基板的方法

    公开(公告)号:US20110069467A1

    公开(公告)日:2011-03-24

    申请号:US12951530

    申请日:2010-11-22

    IPC分类号: H05K7/00

    摘要: New temporary bonding methods and articles formed from those methods are provided. The methods comprise bonding a device wafer to a carrier wafer or substrate only at their outer perimeters in order to assist in protecting the device wafer and its device sites during subsequent processing and handling. The edge bonds formed by this method are chemically and thermally resistant, but can also be softened, dissolved, or mechanically disrupted to allow the wafers to be easily separated with very low forces and at or near room temperature at the appropriate stage in the fabrication process.

    摘要翻译: 提供了从这些方法形成的新的临时粘合方法和制品。 这些方法包括仅在其外周界处将器件晶片结合到载体晶片或衬底,以便在随后的处理和处理期间有助于保护器件晶片及其器件位置。 通过该方法形成的边缘粘合是化学和耐热的,但也可以被软化,溶解或机械破坏,以允许晶片在非常低的力和在室温下或在室温下在制造过程中的适当阶段容易地分离 。

    Hybrid organic-inorganic polymer coatings with high refractive indices
    57.
    发明授权
    Hybrid organic-inorganic polymer coatings with high refractive indices 有权
    具有高折射率的杂化有机 - 无机聚合物涂层

    公开(公告)号:US07803458B2

    公开(公告)日:2010-09-28

    申请号:US11246399

    申请日:2005-10-07

    IPC分类号: B32B27/18

    摘要: Novel compositions and methods of using those compositions to form metal oxide films or coatings are provided. The compositions comprise an organometallic oligomer and an organic polymer or oligomer dispersed or dissolved in a solvent system. The compositions have long shelf lives and can be prepared by easy and reliable preparation procedures. The compositions can be cured to cause conversion of the composition into films of metal oxide interdispersed with organic polymer or oligomer. The cured films have high refractive indices, high optical clarities, and good mechanical stabilities at film thicknesses of greater than about 1 μm.

    摘要翻译: 提供了使用这些组合物形成金属氧化物膜或涂层的新型组合物和方法。 组合物包含分散或溶解在溶剂体系中的有机金属低聚物和有机聚合物或低聚物。 组合物具有长的保质期,并且可以通过简单和可靠的制备方法制备。 组合物可以固化以使组合物转化成与有机聚合物或低聚物分散的金属氧化物的膜。 固化膜具有高折射率,高光学透明度,以及在大于约1μm的膜厚度下的良好的机械稳定性。

    ON-TRACK PROCESS FOR PATTERNING HARDMASK BY MULTIPLE DARK FIELD EXPOSURES
    58.
    发明申请
    ON-TRACK PROCESS FOR PATTERNING HARDMASK BY MULTIPLE DARK FIELD EXPOSURES 有权
    用于通过多个深色场景曝光来绘制HARDMASK的轨道过程

    公开(公告)号:US20090191474A1

    公开(公告)日:2009-07-30

    申请号:US12362268

    申请日:2009-01-29

    IPC分类号: G03F1/00 G03F7/20

    摘要: This invention provides methods of creating via or trench structures on a developer-soluble hardmask layer using a multiple exposure-development process. The hardmask layer is patterned while the imaging layer is developed. After the imaging layer is stripped using organic solvents, the same hardmask can be further patterned using subsequent exposure-development processes. Eventually, the pattern can be transferred to the substrate using an etching process.

    摘要翻译: 本发明提供了使用多次曝光显影工艺在显影剂可溶硬化掩模层上产生通孔或沟槽结构的方法。 在成像层被开发的同时硬化掩模层被图案化。 在使用有机溶剂剥离成像层之后,可以使用随后的曝光显影工艺进一步图案化相同的硬掩模。 最终,可以使用蚀刻工艺将图案转移到衬底。

    CURABLE HIGH REFRACTIVE INDEX RESINS FOR OPTOELECTRONIC APPLICATIONS
    59.
    发明申请
    CURABLE HIGH REFRACTIVE INDEX RESINS FOR OPTOELECTRONIC APPLICATIONS 审中-公开
    光电应用的可固化高折射率树脂

    公开(公告)号:US20090087666A1

    公开(公告)日:2009-04-02

    申请号:US12194369

    申请日:2008-08-19

    摘要: Novel compositions and methods of using those compositions to form high refractive index coatings are provided. The compositions preferably comprise both a reactive solvent and a high refractive index compound. Preferred reactive solvents include aromatic resins that are functionalized with one or more reactive groups (e.g., epoxides, vinyl ethers, oxetane), while preferred high refractive index compounds include aromatic epoxides, vinyl ethers, oxetanes, phenols, and thiols. An acid or crosslinking catalyst is preferably also included. The inventive compositions are stable under ambient conditions and can be applied to a substrate to form a layer and cured via light and/or heat application. The cured layers have high refractive indices and light transmissions.

    摘要翻译: 提供了使用这些组合物形成高折射率涂层的新型组合物和方法。 组合物优选包含反应性溶剂和高折射率化合物。 优选的反应性溶剂包括用一个或多个反应性基团(例如环氧化物,乙烯基醚,氧杂环丁烷)官能化的芳族树脂,而优选的高折射率化合物包括芳族环氧化物,乙烯基醚,氧杂环丁烷,酚和硫醇。 优选还包括酸或交联催化剂。 本发明的组合物在环境条件下是稳定的,并且可以施加到基底以形成层并通过光和/或热应用固化。 固化层具有高折射率和光透射。

    ALKALINE-RESISTANT NEGATIVE PHOTORESIST FOR SILICON WET-ETCH WITHOUT SILICON NITRIDE
    60.
    发明申请
    ALKALINE-RESISTANT NEGATIVE PHOTORESIST FOR SILICON WET-ETCH WITHOUT SILICON NITRIDE 有权
    无硅氮氧化物的硅氧化锌耐碱性负离子

    公开(公告)号:US20080261145A1

    公开(公告)日:2008-10-23

    申请号:US11736429

    申请日:2007-04-17

    IPC分类号: G03C1/043 G03C5/00

    摘要: New photoresists for use during the production of semiconductor and MEMS devices are provided. The primer layer preferably comprises a silane dissolved or dispersed in a solvent system. The photoresist layer includes a first polymer prepared from a styrene and an acrylonitrile, and a second polymer comprising epoxy-containing monomers (and preferably phenolic-containing monomers). The photoresist layer comprises a photoacid generator, and is preferably negative-acting.

    摘要翻译: 提供了在制造半导体和MEMS器件期间使用的新型光致抗蚀剂。 底漆层优选包含溶解或分散在溶剂体系中的硅烷。 光致抗蚀剂层包括由苯乙烯和丙烯腈制备的第一聚合物,以及包含含环氧单体(优选含酚单体)的第二聚合物。 光致抗蚀剂层包括光致酸发生剂,并且优选为负性作用。