公开(公告)号：US20240025006A1

公开(公告)日：2024-01-25

申请号：US18478723

申请日：2023-09-29

Applicant: Applied Materials, Inc.

Inventor： Haosheng Wu ,  Jianshe Tang ,  Brian J. Brown ,  Shih-Haur Shen ,  Shou-Sung Chang ,  Hari Soundararajan

IPC: B24B37/015 ,  B24B57/02

CPC classification number: B24B37/015 ,  B24B57/02

Abstract: A chemical mechanical polishing system includes a polishing a port to dispense polishing liquid onto a polishing pad and a liquid flow controller to control a flow rate of the polishing liquid to the port, a temperature control system to control a temperature of the polishing pad, and a control system. The control system is configured to obtain a baseline removal rate, a baseline temperature and a baseline polishing liquid flow rate. A function is stored relating removal rate to polishing liquid flow rate and temperature. The function is used to determine a reduced polishing liquid flow rate and an adjusted temperature such that a resulting removal rate is not below the baseline removal rate. The liquid flow controller is controlled to dispense the polishing liquid at the reduced polishing liquid flow rate and control the temperature control system so that the polishing process reaches the adjusted temperature.

公开(公告)号：US11865671B2

公开(公告)日：2024-01-09

申请号：US16849884

申请日：2020-04-15

Applicant: Applied Materials, Inc.

Inventor： Haosheng Wu ,  Shou-Sung Chang ,  Jianshe Tang ,  Chih Chung Chou ,  Hui Chen ,  Hari Soundararajan ,  Benjamin Cherian

IPC: B24B57/02 ,  H01L21/304 ,  B24B37/04 ,  B24B37/015 ,  B24B37/10 ,  B24B37/22 ,  B24B37/34 ,  B24B55/02 ,  B24B53/017 ,  B24B49/14

CPC classification number: B24B57/02 ,  B24B37/015 ,  B24B37/042 ,  B24B37/105 ,  B24B37/22 ,  B24B37/34 ,  B24B55/02 ,  H01L21/304 ,  B24B49/14 ,  B24B53/017

Abstract: A chemical mechanical polishing apparatus includes a platen to hold a polishing pad, a carrier laterally movable by an actuator across the polishing pad to hold a substrate against a polishing surface of the polishing pad during a polishing process, a thermal control system including a plurality of independently controllable heaters and coolers to independently control temperatures of a plurality of zones on the polishing pad, and a controller configured to cause the thermal control system to generate a first zone having a first temperature and a second zone having a different second temperature on the polishing pad.

公开(公告)号：US20230390886A1

公开(公告)日：2023-12-07

申请号：US18205262

申请日：2023-06-02

Applicant: Applied Materials, Inc.

Inventor： Upendra Ummethala ,  Nicholas A. Wiswell ,  David Masayuki Ishikawa ,  Sohrab Pourmand ,  Benjamin Cherian ,  Thomas H. Osterheld ,  Jeonghoon Oh ,  Jianshe Tang

IPC: B24B37/013 ,  H01L21/66

CPC classification number: B24B37/013 ,  H01L22/26

Abstract: A chemical mechanical polishing apparatus, including a platen supporting a polishing pad; a carrier head to hold a surface of a substrate against the polishing pad; a motor to generate relative motion between the platen and the carrier head so as to polish an overlying layer on the substrate; an array of acoustic sensors arranged within the carrier head to receive acoustic signals from the surface of the substrate; and a controller configured to detect a position of an acoustic event on the surface of the substrate based on received acoustic signals from the array of acoustic sensors.

公开(公告)号：US11826872B2

公开(公告)日：2023-11-28

申请号：US17357802

申请日：2021-06-24

Applicant: Applied Materials, Inc.

Inventor： Haosheng Wu ,  Jianshe Tang ,  Brian J. Brown ,  Shih-Haur Shen ,  Shou-Sung Chang ,  Hari Soundararajan

IPC: B24B37/015 ,  B24B57/02

CPC classification number: B24B37/015 ,  B24B57/02

Abstract: A chemical mechanical polishing system includes a polishing a port to dispense polishing liquid onto a polishing pad and a liquid flow controller to control a flow rate of the polishing liquid to the port, a temperature control system to control a temperature of the polishing pad, and a control system. The control system is configured to obtain a baseline removal rate, a baseline temperature and a baseline polishing liquid flow rate. A function is stored relating removal rate to polishing liquid flow rate and temperature. The function is used to determine a reduced polishing liquid flow rate and an adjusted temperature such that a resulting removal rate is not below the baseline removal rate. The liquid flow controller is controlled to dispense the polishing liquid at the reduced polishing liquid flow rate and control the temperature control system so that the polishing process reaches the adjusted temperature.

公开(公告)号：US11697187B2

公开(公告)日：2023-07-11

申请号：US16849912

申请日：2020-04-15

Applicant: Applied Materials, Inc.

Inventor： Haosheng Wu ,  Shou-Sung Chang ,  Jianshe Tang ,  Chih Chung ,  Hui Chen ,  Hari Soundararajan ,  Benjamin Cherian

IPC: B24B1/00 ,  B24B57/02 ,  H01L21/304 ,  B24B37/04 ,  B24B37/015 ,  B24B37/10 ,  B24B37/22 ,  B24B37/34 ,  B24B55/02 ,  B24B53/017 ,  B24B49/14

CPC classification number: B24B57/02 ,  B24B37/015 ,  B24B37/042 ,  B24B37/105 ,  B24B37/22 ,  B24B37/34 ,  B24B55/02 ,  H01L21/304 ,  B24B49/14 ,  B24B53/017

Abstract: A chemical mechanical polishing apparatus includes a rotatable platen to hold a polishing pad, a rotatable carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, a polishing liquid supply port to supply a polishing liquid to the polishing surface, a thermal control system including a movable nozzle to spray a medium onto the polishing surface to adjust a temperature of a zone on the polishing surface, an actuator to move the nozzle radially relative to an axis of rotation of the platen, and a controller configured to coordinate dispensing of the medium from the nozzle with motion of the nozzle across the polishing surface.

公开(公告)号：US20220402096A1

公开(公告)日：2022-12-22

申请号：US17897088

申请日：2022-08-26

Applicant: Applied Materials, Inc.

Inventor： Yen-Chu Yang ,  Stephen Jew ,  Jianshe Tang ,  Haosheng Wu ,  Shou-Sung Chang ,  Paul D. Butterfield ,  Alexander John Fisher ,  Bum Jick Kim

IPC: B24B57/02 ,  B24B37/10

Abstract: An apparatus for chemical mechanical polishing includes a rotatable platen having a surface to support a polishing pad, a carrier head to hold a substrate in contact with the polishing pad, and a polishing liquid distribution system. The polishing liquid distribution system includes a dispenser positioned to deliver a polishing liquid to a portion of a polishing surface of the polishing pad, and a curved barrier positioned after the dispenser to spread fresh polishing liquid from the dispenser.

公开(公告)号：US20210402553A1

公开(公告)日：2021-12-30

申请号：US17357802

申请日：2021-06-24

Applicant: Applied Materials, Inc.

Inventor： Haosheng Wu ,  Jianshe Tang ,  Brian J. Brown ,  Shih-Haur Shen ,  Shou-Sung Chang ,  Hari Soundararajan

IPC: B24B37/015 ,  B24B57/02

Abstract: A chemical mechanical polishing system includes a polishing a port to dispense polishing liquid onto a polishing pad and a liquid flow controller to control a flow rate of the polishing liquid to the port, a temperature control system to control a temperature of the polishing pad, and a control system. The control system is configured to obtain a baseline removal rate, a baseline temperature and a baseline polishing liquid flow rate. A function is stored relating removal rate to polishing liquid flow rate and temperature. The function is used to determine a reduced polishing liquid flow rate and an adjusted temperature such that a resulting removal rate is not below the baseline removal rate. The liquid flow controller is controlled to dispense the polishing liquid at the reduced polishing liquid flow rate and control the temperature control system so that the polishing process reaches the adjusted temperature.

公开(公告)号：US20200376626A1

公开(公告)日：2020-12-03

申请号：US16886238

申请日：2020-05-28

Applicant: Applied Materials, Inc.

Inventor： Haosheng Wu ,  Jianshe Tang ,  Hari Soundararajan ,  Shou-Sung Chang ,  Paul D. Butterfield ,  Hui Chen ,  Chih Chung Chou ,  Alexander John Fisher

IPC: B24B53/017 ,  B24B57/02 ,  B24B53/00

Abstract: A method of temperature control for a chemical mechanical polishing system includes directing a gas that includes steam from an orifice onto the component in the polishing system while the component is spaced away from a polishing pad of the polishing system to raise a temperature of the component to an elevated temperature, and before the component returns to an ambient temperature, moving the component into contact with the polishing pad.

公开(公告)号：US10478937B2

公开(公告)日：2019-11-19

申请号：US14639859

申请日：2015-03-05

Applicant: Applied Materials, Inc.

Inventor： Jianshe Tang ,  David Masayuki Ishikawa ,  Benjamin Cherian ,  Jeonghoon Oh ,  Thomas H. Osterheld

IPC: B24B37/013 ,  B24B49/00

Abstract: A chemical mechanical polishing apparatus includes a platen to support a polishing pad, and an in-situ acoustic emission monitoring system including an acoustic emission sensor supported by the platen, a waveguide configured to extending through at least a portion of the polishing pad, and a processor to receive a signal from the acoustic emission sensor. The in-situ acoustic emission monitoring system is configured to detect acoustic events caused by deformation of the substrate and transmitted through the waveguide, and the processor is configured to determine a polishing endpoint based on the signal.

公开(公告)号：US20190143476A1

公开(公告)日：2019-05-16

申请号：US16189968

申请日：2018-11-13

Applicant: Applied Materials, Inc.

Inventor： Haosheng Wu ,  Hari Soundararajan ,  Yen-Chu Yang ,  Jianshe Tang ,  Shou-Sung Chang ,  Shih-Haur Shen ,  Taketo Sekine

IPC: B24B37/015 ,  B24B37/10

Abstract: A chemical mechanical polishing system includes a support to hold a polishing pad, a carrier head to hold a substrate against the polishing pad during a polishing process, an in-situ monitoring system configured to generate a signal indicative of an amount of material on the substrate, a temperature control system to control a temperature of the polishing process, and a controller coupled to the in-situ monitoring system and the temperature control system. The controller is configured to cause the temperature control system to vary the temperature of the polishing process in response to the signal.