公开(公告)号：US20180294154A1

公开(公告)日：2018-10-11

申请号：US15936740

申请日：2018-03-27

Applicant: Applied Materials, Inc.

Inventor： Pramit MANNA ,  Shishi JIANG ,  Abhijit Basu MALLICK

IPC: H01L21/02 ,  H01L21/762 ,  C23C16/04

CPC classification number: H01L21/02532 ,  C23C16/0245 ,  C23C16/045 ,  C23C16/24 ,  C23C16/505 ,  H01L21/0243 ,  H01L21/02488 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/76224

Abstract: Methods for gapfilling semiconductor device features, such as high aspect ratio trenches, with amorphous silicon (a-Si) film that involves pretreating the surface of the substrate to modify the underlying hydroxy-terminated silicon (Si—OH) or hydrogen-terminated silicon (Si—H) surface to oxynitride-terminated silicon (Si—ON) or nitride-terminated silicon (Si—N) and enhance the subsequent a-Si deposition are provided. First, a substrate having features formed in a first surface of the substrate is provided. The surface of the substrate is then pretreated to enhance the surface of the substrate for the flowable deposition of amorphous silicon that follows. A flowable deposition process is then performed to deposit a flowable silicon layer over the surface of the substrate. Methods described herein generally improve overall etch selectivity by the conformal silicon deposition and the flowable silicon deposition process to realize seam-free gapfilling between features with high quality amorphous silicon film.

公开(公告)号：US20170110321A1

公开(公告)日：2017-04-20

申请号：US14961920

申请日：2015-12-08

Applicant: Applied Materials, Inc.

Inventor： Rui CHENG ,  Abhijit Basu MALLICK ,  Srinivas GANDIKOTA ,  Pramit MANNA

IPC: H01L21/225 ,  H01L29/167 ,  H01L21/02 ,  H01L29/66 ,  H01L21/324

CPC classification number: H01L21/2254 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/324 ,  H01L29/167 ,  H01L29/66795 ,  H01L29/66803

Abstract: Embodiments described herein generally relate to doping of three dimensional (3D) structures on a substrate. In one embodiment, a conformal dopant containing film may be deposited over the 3D structures. Suitable dopants that may be incorporated in the film may include boron, phosphorous, and other suitable dopants. The film may be subsequently annealed to diffuse the dopants into the 3D structures.

公开(公告)号：US20140162194A1

公开(公告)日：2014-06-12

申请号：US13897270

申请日：2013-05-17

Applicant: APPLIED MATERIALS, INC.

Inventor： Jingjing XU ,  Joe Griffith CRUZ ,  Pramit MANNA ,  Deenesh PADHI ,  Bok Hoen KIM ,  Barry L. CHIN

IPC: G03F7/16

CPC classification number: G03F7/167 ,  H01L21/02118 ,  H01L21/02277 ,  H01L21/0271

Abstract: Methods and apparatus for forming a sacrificial during a novel process sequence of lithography and photoresist patterning are provided. In one embodiment, a method of processing a substrate having a resist material and an anti-reflective coating material thereon includes depositing an organic polymer layer over the surface of the substrate inside a process chamber using a CVD technique. The CVD technique includes flowing a monomer into a processing region of the process chamber, flowing an initiator into the processing region through one or more filament wires heated to a temperature between about 200° C. and about 450° C., and forming the organic polymer layer. In addition, the organic polymer layer is ashable and can be removed from the surface of the substrate when the resist material is removed from the surface of the substrate.

Abstract translation: 提供了在光刻和光致抗蚀剂图案化的新工艺序列期间形成牺牲的方法和装置。 在一个实施例中，一种在其上处理具有抗蚀剂材料和抗反射涂层材料的衬底的方法包括：使用CVD技术在处理室内的衬底的表面上沉积有机聚合物层。 CVD技术包括使单体流入处理室的处理区域，通过加热至约200℃至约450℃之间的温度的一根或多根细丝丝将引发剂流入加工区域，并形成有机物 聚合物层。 另外，当从基板的表面去除抗蚀剂材料时，有机聚合物层是可灰化的，并且可以从基板的表面去除。