公开(公告)号：US11955331B2

公开(公告)日：2024-04-09

申请号：US15899656

申请日：2018-02-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Hanhong Chen ,  Kelvin Chan ,  Philip Allan Kraus ,  Thai Cheng Chua

IPC: H01L21/02 ,  C23C16/00 ,  H01L21/677 ,  H01L21/687

CPC classification number: H01L21/0217 ,  C23C16/00 ,  H01L21/02208 ,  H01L21/0228 ,  H01L21/67703 ,  H01L21/68771

Abstract: Embodiments includes methods for forming a silicon nitride film on a substrate in a deposition chamber. In embodiments, the substrate is sequentially exposed to a sequence of processing gases, comprising: a silicon halide precursor that absorbs onto a surface of the substrate to form an absorbed layer of the silicon halide, a first reacting gas that includes N2 and one or both of Ar and He, and a second reacting gas comprising a hydrogen-containing gas and one or more of Ar, He, and N2. In embodiments, the hydrogen-containing gas includes at least one of H2 (molecular hydrogen), NH3 (ammonia), N2H2 (diazene), N2H4 (hydrazine), and HN3 (hydrogen azide). Embodiments may include repeating the sequence until a desired thickness of the silicon nitride film is obtained.

公开(公告)号：US11886120B2

公开(公告)日：2024-01-30

申请号：US17356304

申请日：2021-06-23

Applicant: Applied Materials, Inc

Inventor： Lakmal Charidu Kalutarage ,  Mark Joseph Saly ,  Bhaskar Jyoti Bhuyan ,  Thomas Joseph Knisley ,  Kelvin Chan ,  Regina Germanie Freed ,  David Michael Thompson ,  Susmit Singha Roy ,  Madhur Sachan

IPC: G03F7/16 ,  G03F7/004 ,  C23C16/50 ,  C23C16/455 ,  C23C16/40 ,  H01L21/027

CPC classification number: G03F7/167 ,  C23C16/40 ,  C23C16/45536 ,  C23C16/45553 ,  C23C16/50 ,  G03F7/0043 ,  G03F7/168 ,  H01L21/0274

Abstract: Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method comprises forming a first metal oxo film on the substrate with a first vapor phase process including a first metal precursor vapor and a first oxidant vapor, and forming a second metal oxo film over the first metal oxo film with a second vapor phase process including a second metal precursor vapor and a second oxidant vapor.

公开(公告)号：US11749564B2

公开(公告)日：2023-09-05

申请号：US17028259

申请日：2020-09-22

Applicant: Applied Materials, Inc.

Inventor： M. Arif Zeeshan ,  Kelvin Chan ,  Shantanu Kallakuri ,  Sony Varghese ,  John Hautala

IPC: H01L21/768 ,  H01L21/48

CPC classification number: H01L21/76879 ,  H01L21/486

Abstract: Embodiments herein include void-free material depositions on a substrate (e.g., in a void-free trench-filled (VFTF) component) obtained using directional etching to remove predetermined portions of a seed layer covering the substrate. In several embodiments, directional etching followed by selective deposition can enable fill material (e.g., metal) patterning in tight spaces without any voids or seams. Void-free material depositions may be used in a variety of semiconductor devices, such as transistors, dual work function stacks, dynamic random-access memory (DRAM), non-volatile memory, and the like.

公开(公告)号：US11702742B2

公开(公告)日：2023-07-18

申请号：US17526422

申请日：2021-11-15

Applicant: Applied Materials, Inc.

Inventor： Kelvin Chan ,  Yihong Chen

IPC: C23C16/455 ,  C23C16/08 ,  C23C16/02 ,  C23C16/42

CPC classification number: C23C16/45527 ,  C23C16/0272 ,  C23C16/08 ,  C23C16/42 ,  C23C16/45551

Abstract: Methods for forming a nucleation layer on a substrate. In some embodiments, the processing method comprises sequential exposure to a first reactive gas comprising a metal precursor and a second reactive gas comprising a halogenated silane to form a nucleation layer on the surface of the substrate.

公开(公告)号：US20220404115A1

公开(公告)日：2022-12-22

申请号：US17893559

申请日：2022-08-23

Applicant: Applied Materials, Inc.

Inventor： M. Arif Zeeshan ,  Tristan Y. Ma ,  Kelvin Chan

IPC: F41B3/02

Abstract: Embodiments herein include void-free material depositions on a substrate (e.g., in a void-free trench-filled (VFTF) component). In some embodiments, a method may include providing a plurality of device structures extending from a base, each of the plurality of device structures including a first sidewall opposite a second sidewall and a top surface extending between the first and second sidewalls, and providing a seed layer over the plurality of device structures. The method may further include forming a dielectric layer along just the top surface and along an upper portion of the first and second sidewalls using an angled deposition delivered to the plurality of device structures at a non-zero angle of inclination relative to a perpendicular extending from an upper surface of the base, and forming a fill material within one or more trenches defined by the plurality of device structures.

公开(公告)号：US20220172989A1

公开(公告)日：2022-06-02

申请号：US17672296

申请日：2022-02-15

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Kelvin Chan ,  Xinliang Lu ,  Srinivas Gandikota ,  Yong Wu ,  Susmit Singha Roy ,  Chia Cheng Chin

IPC: H01L21/768 ,  C23C16/02 ,  C23C16/455 ,  C23C16/458 ,  H01L21/285 ,  H01L21/687 ,  H01L23/532

Abstract: Processing methods comprise forming a gap fill layer comprising tungsten or molybdenum by exposing a substrate surface having at least one feature thereon sequentially to a metal precursor and a reducing agent comprising hydrogen to form the gap fill layer in the feature, wherein there is not a nucleation layer between the substrate surface and the gap fill layer.

公开(公告)号：US20220074050A1

公开(公告)日：2022-03-10

申请号：US17526422

申请日：2021-11-15

Applicant: Applied Materials, Inc.

Inventor： Kelvin Chan ,  Yihong Chen

IPC: C23C16/455 ,  C23C16/08 ,  C23C16/02 ,  C23C16/42

Abstract: Methods for forming a nucleation layer on a substrate. In some embodiments, the processing method comprises sequential exposure to a first reactive gas comprising a metal precursor and a second reactive gas comprising a halogenated silane to form a nucleation layer on the surface of the substrate.

公开(公告)号：US20220028691A1

公开(公告)日：2022-01-27

申请号：US16934730

申请日：2020-07-21

Applicant: Applied Materials, Inc.

Inventor： Lakmal Charidu Kalutarage ,  Mark Joseph Saly ,  Bhaskar Jyoti Bhuyan ,  Thomas Joseph Knisley ,  Kelvin Chan ,  Regina Germanie Freed ,  David Michael Thompson ,  Susmit Singha Roy ,  Madhur Sachan

IPC: H01L21/033 ,  H01L21/02

Abstract: Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method comprises forming a first metal oxo film on the substrate with a first vapor phase process including a first metal precursor vapor and a first oxidant vapor, and forming a second metal oxo film over the first metal oxo film with a second vapor phase process including a second metal precursor vapor and a second oxidant vapor.

公开(公告)号：US20220020583A1

公开(公告)日：2022-01-20

申请号：US16932793

申请日：2020-07-19

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Diwakar Kedlaya ,  Karthik Janakiraman ,  Gautam K. Hemani ,  Krishna Nittala ,  Alicia J. Lustgraaf ,  Zubin Huang ,  Brett Spaulding ,  Shashank Sharma ,  Kelvin Chan

IPC: H01L21/02 ,  C23C16/50 ,  C23C16/24

Abstract: Exemplary methods of semiconductor processing may include flowing a silicon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region, and the substrate may be maintained at a temperature below or about 450° C. The methods may include striking a plasma of the silicon-containing precursor. The methods may include forming a layer of amorphous silicon on a semiconductor substrate. The layer of amorphous silicon may be characterized by less than or about 3% hydrogen incorporation.

公开(公告)号：US20210391156A1

公开(公告)日：2021-12-16

申请号：US16898244

申请日：2020-06-10

Applicant: Applied Materials, Inc.

Inventor： Kelvin Chan ,  Philip Allan Kraus ,  Thai Cheng Chua ,  Hanh Nguyen ,  Anantha Subramani

IPC: H01J37/32 ,  B08B7/00 ,  H05H1/46

Abstract: Embodiments disclosed herein include a cleaning module for the exhaust line of a chamber. In an embodiment, a mobile cleaning module comprises a chamber where the chamber comprises a first opening and a second opening. In an embodiment, the cleaning module further comprises a lid to seal the first opening. In an embodiment, the lid comprises a dielectric plate, a dielectric resonator coupled to the dielectric plate, a monopole antenna positioned in a hole into the dielectric resonator, and a conductive layer surrounding the dielectric resonator.