公开(公告)号：US11060188B2

公开(公告)日：2021-07-13

申请号：US16515585

申请日：2019-07-18

Applicant: Applied Materials, Inc.

Inventor： Sang Ho Yu ,  Seshadri Ganguli

IPC: C23C16/40 ,  C23C16/455 ,  H01J37/26 ,  C01F7/02

Abstract: Processing methods for depositing aluminum etch stop layers comprise positioning a substrate within a processing chamber, wherein the substrate comprises a metal surface and a dielectric surface; exposing the substrate to an aluminum precursor gas comprising an isopropoxide based aluminum precursor to selectively form an aluminum oxide (AlOx) etch stop layer onto the metal surface while leaving exposed the dielectric surface during a chemical vapor deposition process. The metal surfaces may be copper, cobalt, or tungsten.

公开(公告)号：US10930550B2

公开(公告)日：2021-02-23

申请号：US16402607

申请日：2019-05-03

Applicant: Applied Materials, Inc.

Inventor： Seshadri Ganguli ,  Sang Ho Yu ,  Lu Chen

IPC: H01L21/786 ,  H01L21/768 ,  H01L21/02 ,  C23C16/56 ,  C23C16/455 ,  C23C16/34

Abstract: Electronic devices and methods with a barrier layer and methods of forming the barrier layer are described. A substrate can be exposed to a metal precursor (e.g., a tantalum precursor), a reactant (e.g., ammonia) and an optional plasma to form a first thickness of the barrier layer. An optional aluminum film can be formed on the first barrier layer and a second barrier layer is formed on the first barrier layer to form barrier layer with an aluminum inter-layer.

公开(公告)号：US20190341304A1

公开(公告)日：2019-11-07

申请号：US16402607

申请日：2019-05-03

Applicant: Applied Materials, Inc.

Inventor： Seshadri Ganguli ,  Sang Ho Yu ,  Lu Chen

IPC: H01L21/768 ,  H01L21/02

Abstract: Electronic devices and methods with a barrier layer and methods of forming the barrier layer are described. A substrate can be exposed to a metal precursor (e.g., a tantalum precursor), a reactant (e.g., ammonia) and an optional plasma to form a first thickness of the barrier layer. An optional aluminum film can be formed on the first barrier layer and a second barrier layer is formed on the first barrier layer to form barrier layer with an aluminum inter-layer.

公开(公告)号：US09051655B2

公开(公告)日：2015-06-09

申请号：US14028099

申请日：2013-09-16

Applicant: Applied Materials, Inc.

Inventor： Kai Wu ,  Sang Ho Yu ,  Kie Jin Park ,  Glen T. Mori ,  Joshua Collins

IPC: B44C1/22 ,  C23F1/00 ,  C23F3/00 ,  C23F4/00 ,  H01J37/32

CPC classification number: C23F4/00 ,  C23G5/00 ,  H01J37/32009 ,  H01J2237/334 ,  H01L21/02068

Abstract: Embodiments described herein generally provide a method for performing a semiconductor precleaning process. More specifically, embodiments provided herein relate to boron ionization for aluminum oxide etch enhancement. A process for removing native oxide from aluminum may utilize ionized boron alone or in combination with a halogen plasma. The ionized boron may provide improved aluminum oxide etching properties while being highly selective for native oxides more generally.

Abstract translation: 本文描述的实施例通常提供了一种用于执行半导体预清洗处理的方法。 更具体地，本文提供的实施方案涉及用于氧化铝蚀刻增强的硼电离。 从铝中除去天然氧化物的方法可以单独使用电离硼或与卤素等离子体组合使用。 电离硼可以提供改进的氧化铝蚀刻性质，同时更通常地对天然氧化物具有高选择性。

公开(公告)号：US09048183B2

公开(公告)日：2015-06-02

申请号：US14147291

申请日：2014-01-03

Applicant: Applied Materials, Inc.

Inventor： Seshadri Ganguli ,  Srinivas Gandikota ,  Yu Lei ,  Xinliang Lu ,  Sang Ho Yu ,  Hoon Kim ,  Paul F. Ma ,  Mei Chang ,  Maitreyee Mahajani ,  Patricia M. Liu

IPC: H01L21/3205 ,  H01L21/28 ,  C23C16/06 ,  C23C16/32 ,  C23C16/42 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768 ,  H01L21/8238 ,  H01L29/49

CPC classification number: H01L21/28008 ,  C23C16/06 ,  C23C16/32 ,  C23C16/42 ,  C23C16/45542 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28097 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76871 ,  H01L21/823814 ,  H01L21/823842 ,  H01L29/495 ,  H01L29/4966

Abstract: Embodiments provide methods for depositing metal-containing materials. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. A method for processing a substrate is provided which includes depositing a dielectric material forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MXY, wherein M is tantalum, hafnium, titanium, and lanthanum, X is a halide selected from the group of fluorine, chlorine, bromine, or iodine, and y is from 3 to 5.

Abstract translation: 实施例提供了沉积含金属材料的方法。 所述方法包括通过包括热分解，CVD，脉冲CVD或ALD的气相沉积工艺形成金属，金属碳化物，金属硅化物，金属氮化物和金属碳化物衍生物的沉积工艺。 提供了一种用于处理衬底的方法，其包括在电介质材料中形成形成特征定义的电介质材料，将功函数材料保形地沉积在特征定义的侧壁和底部上，以及在工作功能上沉积金属栅极填充材料 用于填充特征定义的材料，其中通过使至少一种具有式MXY的金属卤化物前体与其中M是钽，铪，钛和镧的金属卤化物前体反应沉积功函材料，X是选自氟 ，氯，溴或碘，y为3至5。