公开(公告)号：US20080179672A1

公开(公告)日：2008-07-31

申请号：US12020197

申请日：2008-01-25

申请人： Franz Hirler ,  Armin Willmeroth ,  Markus Schmitt ,  Carolin Tolksdorf ,  Gerald Deboy ,  Ralf Henninger

发明人： Franz Hirler ,  Armin Willmeroth ,  Markus Schmitt ,  Carolin Tolksdorf ,  Gerald Deboy ,  Ralf Henninger

IPC分类号： H01L29/78 ,  H01L29/861

CPC分类号： H01L29/407 ,  H01L29/0847 ,  H01L29/0852 ,  H01L29/404 ,  H01L29/4175 ,  H01L29/4232 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/7393 ,  H01L29/7816 ,  H01L29/7825 ,  H01L29/8611 ,  H01L29/872

摘要： A semiconductor component is described. In one embodiment, the semiconductor component includes a semiconductor body with a first side and a second side. A drift zone is provided, which is arranged in the semiconductor body below the first side and extends in a first lateral direction of the semiconductor body between a first and a second doped terminal zone. At least one field electrode is provided, which is arranged in the drift zone, extends into the drift zone proceeding from the first side and is configured in a manner electrically insulated from the semiconductor body.

摘要翻译： 描述半导体部件。 在一个实施例中，半导体部件包括具有第一侧和第二侧的半导体本体。 提供了漂移区，其布置在第一侧下方的半导体本体中，并且在第一和第二掺杂末端区之间沿半导体本体的第一横向方向延伸。 设置至少一个场电极，其布置在漂移区中，从第一侧延伸到漂移区，并且以与半导体本体电绝缘的方式配置。

公开(公告)号：US20050110077A1

公开(公告)日：2005-05-26

申请号：US10939154

申请日：2004-09-10

申请人： Markus Zundel ,  Rudolf Zelsacher ,  Franz Hirler ,  Dietmar Kotz ,  Hermann Peri ,  Armin Willmeroth

发明人： Markus Zundel ,  Rudolf Zelsacher ,  Franz Hirler ,  Dietmar Kotz ,  Hermann Peri ,  Armin Willmeroth

IPC分类号： H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/78 ,  H01L29/76 ,  H01L21/76

CPC分类号： H01L29/7813 ,  H01L29/0615 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/7811

摘要： A semiconductor component and also a method for producing it are disclosed. In one embodiment, the semiconductor component includes a surface region or a modified doping region is provided alternatively or simultaneously in the edge region of the cell array, in which surface region or modified doping region the doping concentration is lowered and/or in which surface region or modified doping region the conductivity type is formed such that it is opposite to the conductivity type of the actual semiconductor material region, or in which a field plate region is provided.

摘要翻译： 公开了一种半导体元件及其制造方法。 在一个实施例中，半导体部件包括表面区域或修改的掺杂区域交替地或同时地设置在电池阵列的边缘区域中，其中掺杂浓度降低的表面区域或修饰掺杂区域和/或其中表面区域 或改性掺杂区域形成导电类型，使其与实际的半导体材料区域的导电类型相反，或者设置有场板区域。

公开(公告)号：US08901642B2

公开(公告)日：2014-12-02

申请号：US13414037

申请日：2012-03-07

申请人： Hans Weber ,  Franz Hirler

发明人： Hans Weber ,  Franz Hirler

IPC分类号： H01L29/78

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/167 ,  H01L29/32 ,  H01L29/407 ,  H01L29/408 ,  H01L29/41766 ,  H01L29/66727

摘要： A semiconductor device includes a semiconductor body having a first surface defining a vertical direction and a source metallization arranged on the first surface. In a vertical cross-section the semiconductor body further includes: a drift region of a first conductivity type; at least two compensation regions of a second conductivity type each of which forms a pn-junction with the drift region and is in low resistive electric connection with the source metallization; a drain region of the first conductivity type having a maximum doping concentration higher than a maximum doping concentration of the drift region, and a third semiconductor layer of the first conductivity type arranged between the drift region and the drain region and includes at least one of a floating field plate and a floating semiconductor region of the second conductivity type forming a pn-junction with the third semiconductor layer.

摘要翻译： 半导体器件包括具有限定垂直方向的第一表面和布置在第一表面上的源极金属化的半导体本体。 在垂直横截面中，半导体主体还包括：第一导电类型的漂移区; 至少两个第二导电类型的补偿区域，每个补偿区域与漂移区域形成pn结并与源极金属化处于低电阻电连接; 具有高于漂移区的最大掺杂浓度的最大掺杂浓度的第一导电类型的漏极区和布置在漂移区和漏极区之间的第一导电类型的第三半导体层，并且包括以下中的至少一个： 浮置场板和第二导电类型的浮置半导体区域形成与第三半导体层的pn结。

公开(公告)号：US20140001552A1

公开(公告)日：2014-01-02

申请号：US13539973

申请日：2012-07-02

申请人： Franz Hirler ,  Hans Weber ,  Hans-Joachim Schulze ,  Uwe Wahl

发明人： Franz Hirler ,  Hans Weber ,  Hans-Joachim Schulze ,  Uwe Wahl

IPC分类号： H01L29/772 ,  H01L21/20 ,  H01L29/02

CPC分类号： H01L29/66712 ,  H01L29/0634 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/161 ,  H01L29/167 ,  H01L29/408 ,  H01L29/7395 ,  H01L29/7811 ,  H01L29/8611

摘要： A drift layer of a super junction semiconductor device includes first portions of a first conductivity type and second portions of a second conductivity type opposite to the first conductivity type. The first and second portions are formed both in a cell area and in an edge area surrounding the cell area, wherein an on-state or forward current through the drift layer flows through the first portions in the cell area. At least one of the first and second portions other than the first portions in the cell area includes an auxiliary structure or contains auxiliary impurities to locally reduce the avalanche rate. Locally reducing the avalanche rate increases the total voltage blocking capability of the super junction semiconductor device.

摘要翻译： 超结半导体器件的漂移层包括第一导电类型的第一部分和与第一导电类型相反的第二导电类型的第二部分。 第一和第二部分在单元区域和围绕单元区域的边缘区域中形成，其中通过漂移层的导通状态或正向电流流过单元区域中的第一部分。 电池区域中除了第一部分之外的第一和第二部分中的至少一个包括辅助结构或包含辅助杂质以局部降低雪崩率。 本地降低雪崩率提高了超结半导体器件的总电压阻断能力。

公开(公告)号：US20130082322A1

公开(公告)日：2013-04-04

申请号：US13250013

申请日：2011-09-30

申请人： Hans Weber ,  Franz Hirler ,  Stefan Gamerith

发明人： Hans Weber ,  Franz Hirler ,  Stefan Gamerith

IPC分类号： H01L21/336 ,  H01L21/28

CPC分类号： H01L29/872 ,  H01L29/0653 ,  H01L29/407 ,  H01L29/7813 ,  H01L29/868

摘要： Disclosed is a semiconductor device including a drift region of a first doping type, a junction between the drift region and a device region, and at least one field electrode structure in the drift region. The field electrode structure includes a field electrode, a field electrode dielectric adjoining the field electrode and arranged between the field electrode and the drift region, and having an opening, at least one of a field stop region and a generation region.

摘要翻译： 公开了一种半导体器件，其包括第一掺杂类型的漂移区域，漂移区域和器件区域之间的结以及漂移区域中的至少一个场电极结构。 场电极结构包括场电极，与场电极相邻并且设置在场电极和漂移区之间的场电极电介质，并且具有开场，场停止区和发生区中的至少一个。

公开(公告)号：US20110101451A1

公开(公告)日：2011-05-05

申请号：US12984934

申请日：2011-01-05

申请人： Anton Mauder ,  Stefan Sedlmaier ,  Ralf Erichsen ,  Hans Weber ,  Oliver Haeberlen ,  Franz Hirler

发明人： Anton Mauder ,  Stefan Sedlmaier ,  Ralf Erichsen ,  Hans Weber ,  Oliver Haeberlen ,  Franz Hirler

IPC分类号： H01L29/78

CPC分类号： H01L29/7813 ,  H01L21/76224 ,  H01L27/0629 ,  H01L29/0646 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/407 ,  H01L29/66734 ,  H01L29/7804

摘要： A semiconductor component having a semiconductor body having a first and a second side, an edge and an edge region adjacent to the edge in a lateral direction is described.

摘要翻译： 描述了具有半导体本体的半导体部件，该半导体本体具有第一和第二侧面，边缘和与横向方向上的边缘相邻的边缘区域。

公开(公告)号：US20130234239A1

公开(公告)日：2013-09-12

申请号：US13414037

申请日：2012-03-07

申请人： Hans Weber ,  Franz Hirler

发明人： Hans Weber ,  Franz Hirler

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/167 ,  H01L29/32 ,  H01L29/407 ,  H01L29/408 ,  H01L29/41766 ,  H01L29/66727

摘要： A semiconductor device includes a semiconductor body having a first surface defining a vertical direction and a source metallization arranged on the first surface. In a vertical cross-section the semiconductor body further includes: a drift region of a first conductivity type; at least two compensation regions of a second conductivity type each of which forms a pn-junction with the drift region and is in low resistive electric connection with the source metallization; a drain region of the first conductivity type having a maximum doping concentration higher than a maximum doping concentration of the drift region, and a third semiconductor layer of the first conductivity type arranged between the drift region and the drain region and includes at least one of a floating field plate and a floating semiconductor region of the second conductivity type forming a pn-junction with the third semiconductor layer.

摘要翻译： 半导体器件包括具有限定垂直方向的第一表面和布置在第一表面上的源极金属化的半导体本体。 在垂直横截面中，半导体主体还包括：第一导电类型的漂移区; 至少两个第二导电类型的补偿区域，每个补偿区域与漂移区域形成pn结并与源极金属化处于低电阻电连接; 具有高于漂移区的最大掺杂浓度的最大掺杂浓度的第一导电类型的漏极区和布置在漂移区和漏极区之间的第一导电类型的第三半导体层，并且包括以下中的至少一个： 浮置场板和第二导电类型的浮置半导体区域形成与第三半导体层的pn结。

公开(公告)号：US09112053B2

公开(公告)日：2015-08-18

申请号：US13537374

申请日：2012-06-29

申请人： Hans Weber ,  Franz Hirler ,  Andreas Meiser ,  Anton Mauder ,  Kurt Sorschag ,  Stefan Gamerith ,  Roman Knoefler

发明人： Hans Weber ,  Franz Hirler ,  Andreas Meiser ,  Anton Mauder ,  Kurt Sorschag ,  Stefan Gamerith ,  Roman Knoefler

IPC分类号： H01L21/8234 ,  H01L27/06 ,  H01L29/40 ,  H01L29/66 ,  H01L29/78 ,  H01L29/06

CPC分类号： H01L29/7802 ,  H01L21/823437 ,  H01L21/823481 ,  H01L21/823487 ,  H01L27/0629 ,  H01L29/0653 ,  H01L29/407 ,  H01L29/66734 ,  H01L29/7828

摘要： A semiconductor device with a dielectric layer is produced by providing a semiconductor body with a first trench extending into the semiconductor body, the first trench having a bottom and a sidewall. A first dielectric layer is formed on the sidewall in a lower portion of the first trench and a first plug is formed in the lower portion of the first trench so as to cover the first dielectric layer. The first plug leaves an upper portion of the sidewall uncovered. A sacrificial layer is formed on the sidewall in the upper portion of the first trench and a second plug is formed in the upper portion of the first trench. The sacrificial layer is removed so as to form a second trench having sidewalls and a bottom. A second dielectric layer is formed in the second trench and extends to the first dielectric layer.

摘要翻译： 具有电介质层的半导体器件通过向半导体本体提供延伸到半导体本体中的第一沟槽，第一沟槽具有底部和侧壁来制造。 第一电介质层形成在第一沟槽的下部的侧壁上，第一插塞形成在第一沟槽的下部，以覆盖第一电介质层。 第一个塞子留下未覆盖的侧壁的上部。 牺牲层形成在第一沟槽的上部的侧壁上，第二插塞形成在第一沟槽的上部。 除去牺牲层以形成具有侧壁和底部的第二沟槽。 第二介电层形成在第二沟槽中并延伸到第一介电层。

公开(公告)号：US08742550B2

公开(公告)日：2014-06-03

申请号：US13541884

申请日：2012-07-05

申请人： Hans Weber ,  Franz Hirler

发明人： Hans Weber ,  Franz Hirler

IPC分类号： H01L21/02

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/408 ,  H01L29/41766 ,  H01L29/66727 ,  H01L29/7816

摘要： A semiconductor device is provided. The semiconductor device includes a semiconductor body and a source metallization which is arranged on the semiconductor body. The semiconductor body includes in a cross-section a drift region of a first conductivity type, a first body region of a second conductivity type which adjoins the drift region, a first compensation region of the second conductivity type which adjoins the first body region, has a lower maximum doping concentration than the first body region and forms a first pn-junction with the drift region, and a first charge trap. The first charge trap adjoins the first compensation region and includes a field plate and an insulating region which adjoins the drift region and partly surrounds the field plate. The source metallization is arranged in resistive electric connection with the first body region. Further, a method for producing a semiconductor device is provided.

摘要翻译： 提供半导体器件。 半导体器件包括半导体本体和布置在半导体本体上的源极金属化。 半导体本体包括第一导电类型的漂移区域，邻接漂移区域的第二导电类型的第一体区域，邻接第一体区域的第二导电类型的第一补偿区域具有 比第一体区低的最大掺杂浓度，并与漂移区形成第一pn结，以及第一电荷阱。 第一电荷陷波器与第一补偿区域相邻并且包括场板和与漂移区域相邻并部分地围绕场板的绝缘区域。 源极金属化被布置成与第一体区电阻电连接。 此外，提供了一种用于制造半导体器件的方法。

公开(公告)号：US20130307058A1

公开(公告)日：2013-11-21

申请号：US13475302

申请日：2012-05-18

申请人： Uwe Wahl ,  Franz Hirler ,  Hans Weber

发明人： Uwe Wahl ,  Franz Hirler ,  Hans Weber

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L21/20

CPC分类号： H01L29/0634 ,  H01L29/0653 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66143 ,  H01L29/66333 ,  H01L29/66348 ,  H01L29/66712 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7802 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/872

摘要： A semiconductor device includes a semiconductor body having a first surface and a second surface opposite to the first surface. A superjunction structure in the semiconductor body includes drift regions of a first conductivity type and compensation structures alternately disposed in a first direction parallel to the first surface. Each of the charge compensation structures includes a first semiconductor region of a second conductivity type complementary to the first conductivity type and a first trench including a second semiconductor region of the second conductivity type adjoining the first semiconductor region. The first semiconductor region and the first trench are disposed one after another in a second direction perpendicular to the first surface.

摘要翻译： 半导体器件包括具有第一表面和与第一表面相对的第二表面的半导体本体。 半导体主体中的超结构结构包括第一导电类型的漂移区域和在与第一表面平行的第一方向上交替设置的补偿结构。 每个电荷补偿结构包括与第一导电类型互补的第二导电类型的第一半导体区域和包括与第一半导体区域相邻的第二导电类型的第二半导体区域的第一沟槽。 第一半导体区域和第一沟槽在垂直于第一表面的第二方向上依次布置。