公开(公告)号：US07488690B2

公开(公告)日：2009-02-10

申请号：US10885969

申请日：2004-07-06

申请人： R. Suryanarayanan Iyer ,  Andrew M. Lam ,  Yuji Maeda ,  Thomas Mele ,  Jacob W. Smith ,  Sean M. Seutter ,  Sanjeev Tandon ,  Randhir P. Singh Thakur ,  Sunderraj Thirupapuliyur

发明人： R. Suryanarayanan Iyer ,  Andrew M. Lam ,  Yuji Maeda ,  Thomas Mele ,  Jacob W. Smith ,  Sean M. Seutter ,  Sanjeev Tandon ,  Randhir P. Singh Thakur ,  Sunderraj Thirupapuliyur

IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L21/425 ,  H01L21/336

CPC分类号： H01L21/324 ,  H01L29/1054 ,  H01L29/6656 ,  H01L29/7842 ,  H01L29/7843

摘要： An assembly comprises a multilayer nitride stack having nitride etch stop layers formed on top of one another, each of the nitride etch stop layers is formed using a film forming process. A method of making the multilayer nitride stack includes placing a substrate in a single wafer deposition chamber and thermally shocking the substrate momentarily prior to deposition. A first nitride etch stop layer is deposited over the substrate. A second nitride etch stop layer is deposited over the first nitride etch stop layer.

摘要翻译： 组件包括具有形成在彼此之上的氮化物蚀刻停止层的多层氮化物堆叠，每个氮化物蚀刻停止层使用成膜工艺形成。 制造多层氮化物堆叠的方法包括将衬底放置在单个晶片沉积室中，并在沉积之前瞬间热冲击衬底。 在衬底上沉积第一氮化物蚀刻停止层。 在第一氮化物蚀刻停止层上沉积第二氮化物蚀刻停止层。

公开(公告)号：US07393417B1

公开(公告)日：2008-07-01

申请号：US10111555

申请日：2000-10-20

申请人： Yuji Maeda ,  Koji Nakanishi ,  Nobuo Tokai ,  Ichiro Kawai

发明人： Yuji Maeda ,  Koji Nakanishi ,  Nobuo Tokai ,  Ichiro Kawai

IPC分类号： H01L21/00 ,  C23C14/00 ,  C23C16/00

CPC分类号： H01L21/68735 ,  C23C16/4583 ,  C23C16/46 ,  H01L21/67115 ,  H01L21/6835

摘要： On a wafer holding area 50 on the upper surface of a susceptor 22, a wafer W is supported by a wafer support 54 such that a gap with a predetermined distance is formed between the wafer W and a wafer heating surface 52. A projection 58 that decreases the distance of the gap with respect to the wafer W is formed on the wafer heating surface 52. At this time, the heating condition for the wafer W by the susceptor 22 is adjusted by means of the distances of the gaps at the respective portions of the wafer holding area 50. Thus, the uniformity of the planar temperature distribution of the wafer W and that of the thickness distribution of the formed film can be improved.

摘要翻译： 在基座22的上表面上的晶片保持区域50上，晶片W由晶片支撑件54支撑，使得在晶片W和晶片加热面52之间形成预定距离的间隙。突起58 减小了在晶片加热面52上形成相对于晶片W的间隙的距离。此时，由基座22对晶片W的加热条件通过各部分的间隙的距离进行调节 的晶片保持区域50。 因此，可以提高晶片W的平面温度分布的均匀性和所形成的膜的厚度分布的均匀性。

公开(公告)号：US07219522B2

公开(公告)日：2007-05-22

申请号：US10522217

申请日：2003-07-25

申请人： Yuji Maeda ,  Sigetomi Miyoshi ,  Takahiro Yamaguchi

发明人： Yuji Maeda ,  Sigetomi Miyoshi ,  Takahiro Yamaguchi

IPC分类号： B21C23/00

CPC分类号： B21C23/217 ,  B21C23/186 ,  B21C25/02

摘要： It is an object of the present invention to provide a novel aluminum tube of an oval cross section that has a wider range of applications and added values. A disk-shaped metal slug (21) is impact-extruded with the use of a die (14) and a punch (13) each having an optimally designed structure to form a metal tube (T) integrally including a mouth, a shoulder and a body of an oval cross section. A hem portion of the oval body of the tube (T) thus formed and hardened by the impact extrusion is once deformed into a circular shape, and then trimmed off by a turning operation.

摘要翻译： 本发明的一个目的是提供一种椭圆形横截面的新型铝管，其应用范围更广泛且附加值更高。 使用具有最佳设计结构的模具（14）和冲头（13）冲击挤压盘形金属块（21），以形成一体的金属管（T），其包括口，肩和 一个椭圆形截面的身体。 通过冲击挤出形成并硬化的管（T）的椭圆体的中间部分一度变形为圆形，然后通过转动操作来修剪。

公开(公告)号：US20060009041A1

公开(公告)日：2006-01-12

申请号：US10885969

申请日：2004-07-06

申请人： R. Iyer ,  Andrew Lam ,  Yuji Maeda ,  Thomas Mele ,  Faran Nouri ,  Jacob Smith ,  Sean Seutter ,  Sanjeev Tandon ,  Randhir Singh Thakur ,  Sunderraj Thirupapuliyur

发明人： R. Iyer ,  Andrew Lam ,  Yuji Maeda ,  Thomas Mele ,  Faran Nouri ,  Jacob Smith ,  Sean Seutter ,  Sanjeev Tandon ,  Randhir Singh Thakur ,  Sunderraj Thirupapuliyur

IPC分类号： H01L21/302

CPC分类号： H01L21/324 ,  H01L29/1054 ,  H01L29/6656 ,  H01L29/7842 ,  H01L29/7843

摘要： An assembly comprises a multilayer nitride stack having nitride etch stop layers formed on top of one another, each of the nitride etch stop layers is formed using a film forming process. A method of making the multilayer nitride stack includes placing a substrate in a single wafer deposition chamber and thermally shocking the substrate momentarily prior to deposition. A first nitride etch stop layer is deposited over the substrate. A second nitride etch stop layer is deposited over the first nitride etch stop layer.

公开(公告)号：US06566199B2

公开(公告)日：2003-05-20

申请号：US09761637

申请日：2001-01-18

申请人： Nobuo Tokai ,  Yuji Maeda ,  Masayuki Hashimoto

发明人： Nobuo Tokai ,  Yuji Maeda ,  Masayuki Hashimoto

IPC分类号： H01L21336

CPC分类号： H01L27/11521 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/3144 ,  H01L21/31662 ,  H01L27/115

摘要： An object of the present invention is to provide a film-forming method, a film-forming system, etc. capable of achieving adequate thickness repeatability and uniformity and sufficiently large film-forming rates in film formation of a thin film on a substrate to be treated and also capable of simplifying a system configuration. A thermal treatment system 1 according to the present invention is a system for forming a thin film of SiO2 on an Si wafer W and is provided with a reactant gas exhaust system 15 for reducing the pressure around the Si wafer W, a reactant gas supply system 14 for supplying hydrogen gas Gh and oxygen gas Go so as to mix them, onto the Si wafer W, and a chamber 2 having a lamp group 9G for heating the Si wafer W, and a wafer support member 3. The Si wafer W is set in the chamber 2, the interior of the chamber 2 is depressurized, the Si wafer W is mounted on the wafer support member 3, the reactant gases X as a mixture of hydrogen gas Gh and oxygen gas Go are supplied into a space Sb in the chamber 2 to flow, and the Si wafer W is heated by the lamp group 9G.

公开(公告)号：US06340848B1

公开(公告)日：2002-01-22

申请号：US09537433

申请日：2000-03-27

申请人： Yuji Maeda

发明人： Yuji Maeda

IPC分类号： B60L100

CPC分类号： H02J1/00 ,  Y10T307/352

摘要： An on-vehicle distribution box for distributing an electrical power supplied from a power source to a first voltage load operated on a first voltage and to a second voltage load operated on a second voltage differed from the first voltage. The distribution box includes a primary circuit of which an upstream point is connected to the power source and of which a downstream point is connected to the first load. The primary circuit has also a first fuse means. The distribution box also includes a branch circuit branched at an upstream point of the fuse means from the primary circuit and connected to the second load at a downstream side of the branch circuit. A DC/DC converter is provided in the branch circuit for converting the first voltage to the second voltage, and a second fuse means is provided in the branch circuit downstream from the DC/DC converter. The first voltage is higher than the second voltage. There may be provided a main distribution box and a secondary distribution box, and an upstream side of the secondary distribution box is connected to a downstream side of the primary box.

摘要翻译： 用于将从电源提供的电力分配给在第一电压上操作的第一电压负载和在第二电压上操作的第二电压负载的车载分配箱不同于第一电压。 分配箱包括其上游点连接到电源并且下游点连接到第一负载的主电路。 主电路还具有第一熔丝装置。 分配箱还包括在熔丝装置的上游点从主电路分支并在分支电路的下游侧连接到第二负载的分支电路。 在分支电路中提供DC / DC转换器，用于将第一电压转换为第二电压，并且在DC / DC转换器的下游的分支电路中提供第二熔丝装置。 第一电压高于第二电压。 可以设置主配电箱和二次配电箱，二次配电箱的上游侧与主箱的下游侧连接。

公开(公告)号：US6072844A

公开(公告)日：2000-06-06

申请号：US861164

申请日：1997-05-21

申请人： Akira Inoue ,  Yuji Maeda

发明人： Akira Inoue ,  Yuji Maeda

IPC分类号： G10L19/04 ,  G10L19/06 ,  G10L19/08 ,  G10L19/14 ,  H03H17/02 ,  H03M7/30 ,  G10L101/12

CPC分类号： G10L19/083 ,  G10L19/26

摘要： A second post filter having characteristics similar to those of a first post filter used in the signal path is prepared and a gain of the first post filter is preliminarily presumed from an input and an output of the second post filter. An optimum scaling value when performing a filtering operation in the first post filter is set by using the gain obtained from the input and output of the second post filter, so that an optimum gain when controlling a gain fluctuation caused by the first post filter is set.

摘要翻译： 准备具有与在信号路径中使用的第一后置滤波器相似的特性的第二后置滤波器，并且从第二后置滤波器的输入和输出预先假设第一后置滤波器的增益。 通过使用从第二后置滤波器的输入和输出获得的增益来设置在第一后置滤波器中执行滤波操作时的最佳缩放值，使得当控制由第一后置滤波器引起的增益波动时的最佳增益被设置 。

公开(公告)号：US6003001A

公开(公告)日：1999-12-14

申请号：US882156

申请日：1997-06-25

申请人： Yuji Maeda

发明人： Yuji Maeda

IPC分类号： G10L19/08 ,  G10L19/00 ,  G10L19/04 ,  H03M7/30 ,  H03M13/00 ,  G10L3/02 ,  G10L9/00

CPC分类号： G10L19/12

摘要： In encoding in which an adaptive codebook such as PSI-CELP or a fixed codebook is used on switching selection, waveform distortion caused by selection of the fixed codebook in case input speech frequency components are changed significantly is diminished. An output of an adaptive codebook 21 or an output of a fixed codebook 22 is selected by a changeover selection switch 26 and summed to an output of noise codebooks 23, 24 so as to be sent to a linear prediction synthesis filter 16. A switching control circuit 19 for controlling the switching of a changeover control switch 26 operates in response to a prediction gain which is a ratio of the linear prediction residual energy to the initial signal energy from a linear prediction analysis circuit 14 so that, if the prediction gain is smaller than a pre-set threshold value, the switching control circuit 19 judges the input signal to be voiced and controls the changeover control switch 26 for compulsorily selecting the output of the adaptive codebook 21.

摘要翻译： 在对诸如PSI-CELP或固定码本的自适应码本进行编码的切换选择中，输入的语音频率成分的情况下，在固定码本的选择引起的波形失真显着变化。 自适应码本21的输出或固定码本22的输出由切换选择开关26选择，并且相加到噪声码本23,24的输出，以被发送到线性预测合成滤波器16.切换控制 用于控制切换控制开关26的切换的电路19响应于来自线性预测分析电路14的线性预测残余能量与初始信号能量的比率的预测增益而工作，使得如果预测增益较小 切换控制电路19比预设的阈值判断要被发音的输入信号，并控制转换控制开关26强制选择自适应码本21的输出。

公开(公告)号：US5896961A

公开(公告)日：1999-04-27

申请号：US720571

申请日：1996-10-01

申请人： Yasuhiko Aida ,  Hiroshi Niwa ,  Yuji Maeda

发明人： Yasuhiko Aida ,  Hiroshi Niwa ,  Yuji Maeda

IPC分类号： F16F6/00 ,  F16F7/10 ,  F16F15/02 ,  F16F15/03

CPC分类号： F16F15/021 ,  F16F15/03 ,  F16F6/00 ,  F16F7/1005

摘要： A dynamic vibration absorber comprises a movable portion including a movable weight portion, a movable portion magnet assembly provided with a movable inside magnet and a movable outside magnet which are mounted to the movable weight portion through a yoke so as to alternately provide different magnetic poles, a fixed portion fixed to an object to be damped, a fixed portion magnet assembly provided with a fixed portion inside magnet and a fixed portion outside magnet mounted to the fixed portion through a yoke so that the fixed portion magnet assembly has magnetic poles different from those of the movable portion magnet in opposed positions, respectively, and a conductor plate disposed in a gap defined between the fixed portion magnet assembly and the movable portion magnet assembly.

摘要翻译： 动态振动吸收器包括可移动部分，其包括可移动重物部分，设置有可移动内侧磁体的可动部分磁体组件和可移动外部磁体，其通过磁轭安装到可移动重量部分，以便交替地提供不同的磁极， 固定到待阻尼物体的固定部分，具有固定部分内部磁体的固定部分磁体组件和通过磁轭安装到固定部分的固定部分外部磁体，使得固定部分磁体组件具有与磁体不同的磁极 和位于固定部分磁体组件和可动部分磁体组件之间的间隙中的导体板。

公开(公告)号：US5545930A

公开(公告)日：1996-08-13

申请号：US295609

申请日：1994-08-25

申请人： Kenichi Watanabe ,  Yuji Maeda ,  Sakae Hikita

发明人： Kenichi Watanabe ,  Yuji Maeda ,  Sakae Hikita

IPC分类号： B60R16/02 ,  B60R16/03 ,  H02J7/14 ,  H02J7/24 ,  H02P9/02 ,  H02P9/04 ,  H02P9/30

CPC分类号： H02J7/1461 ,  H02P9/02 ,  B60R16/03 ,  Y10S320/13

摘要： The present inventions provides a generated-voltage regulator for an automobile, in which the on state of a key switch can be detected securely without being affected by a change in ambient temperature or the like. According to a selected embodiment, when a generation failure occurs in a power generation circuit 12, a power MOS FET 111 is turned on and off periodically so that a charge lamp 3 is lighted. The on/off state of the MOS FET 111 is detected by a detecting section 1121 of a voltage detecting circuit 112. Being supplied with an on signal from the detecting section 1121, a holding section 1122 turns the level of its output signal c to an "H" level only for a predetermined period. As a result, the key switch 2 is not judged to be off even in the case where the MOS FET 111 is turned on, and the on state of a switch 116 is maintained. Accordingly, the power MOS FET 111 which is low in the level of the drain-source voltage thereof in an on state but is small in size, light in weight and small in a heat value, can be employed as a switching section for lighting the charge lamp. Consequently, there is provided a generated voltage regulator in which not only the on state of the key switch can be detected securely regardless of the change of ambient temperature or the like but reduction both in size and in weight can be attained.

摘要翻译： 本发明提供一种用于汽车的生成电压调节器，其中可以可靠地检测钥匙开关的接通状态而不受环境温度等的变化的影响。 根据所选择的实施例，当在发电电路12中发生发电故障时，功率MOS FET 111周期性地接通和断开，使得充电灯3点亮。 MOS FET111的开/关状态由电压检测电路112的检测部分1121检测。保持部分1122被提供有来自检测部分1121的导通信号，将其输出信号c的电平转为 “H”电平仅在预定时间段内。 结果，即使在MOS FET 111导通的情况下，键开关2也不被判断为关闭，并且保持开关116的接通状态。 因此，可以采用在导通状态下的漏极 - 源极电压的低电平，尺寸小，重量轻，热值小的功率MOS FET 111作为用于点亮 充电灯。 因此，提供了一种生成的电压调节器，其中不仅可以可靠地检测钥匙开关的接通状态，而且与环境温度等的变化无关，而且可以实现尺寸和重量的减小。