公开(公告)号：US11222586B2

公开(公告)日：2022-01-11

申请号：US16632169

申请日：2019-05-14

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Dong Li ,  Hongwei Tian ,  Xiaolong Li ,  Shuai Zhang ,  Chunyang Wang

IPC: G09G3/3266 ,  G09G3/3233 ,  H01L27/32 ,  H01L51/00 ,  H01L51/56 ,  G09G3/3275

Abstract: A display panel is disclosed. The display panel includes a flexible substrate; a display sub-region on the flexible substrate including a light emitting device; a peripheral region of the display sub-region spacing the display sub-region from an adjacent display sub-region; and a current compensator in the peripheral region for compensating a current flowing through the light emitting device of the display sub-region in response to deformation of the flexible substrate.

公开(公告)号：US10818741B2

公开(公告)日：2020-10-27

申请号：US16215886

申请日：2018-12-11

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Dong Li ,  Boris Kristal ,  Yuanming Zhang

IPC: H01L27/32 ,  H01L51/50 ,  H01L51/52 ,  H01L51/56

Abstract: An OLED array substrate includes a plurality of pixel structure, including a plurality of pixel units, each of the plurality of pixel units including: a base substrate; a first electrode disposed above the base substrate; a light emitting layer disposed on a side of the first electrode facing away from the base substrate; a second functional layer disposed on a side of the light emitting layer facing away from the base substrate, wherein the second functional layer wraps the light emitting layer.

公开(公告)号：US10712845B2

公开(公告)日：2020-07-14

申请号：US15963063

申请日：2018-04-25

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Jing Wang ,  Shuncheng Zhu ,  Dong Li ,  Zouming Xu ,  Xiaodong Xie ,  Min He ,  Jian Tian ,  Qitao Zheng ,  Yaying Li

IPC: H05K3/20 ,  G06F3/041 ,  G06F3/044

Abstract: The present disclosure relates to a touch substrate and a method of producing the same, and a touch panel and a method of producing the same, and a display device. In an embodiment, a method of producing a touch substrate comprises steps of: forming a flexible film sheet with a metal wiring pattern, the metal wiring pattern comprising metal wirings and metal bonding electrodes connected to the metal wirings respectively; forming a glass substrate on which a touch electrode structure and touch bonding electrodes in an electrical connection with the touch electrode structure are formed, both a sheet resistance of the touch electrode structure and a sheet resistance of the touch bonding electrodes ranging from 12 Ω/□ to 70 Ω/□; and aligning and bonding the flexible film sheet with the glass substrate.

公开(公告)号：US20190288225A1

公开(公告)日：2019-09-19

申请号：US16168239

申请日：2018-10-23

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhuo Chen ,  YuJu Chen ,  Dong Li

IPC: H01L51/50 ,  H01L51/56

Abstract: A quantum dot light emitting device is disclosed. The quantum dot light emitting device includes a first electrode and a second electrode. The quantum dot light emitting device includes a quantum dot light emitting layer interposed between the first electrode and the second electrode. The quantum dot light emitting device includes a first hole transport layer located between the quantum dot light emitting layer and the first electrode. The quantum dot light emitting device includes a hole injection layer located between the first hole transport layer and the first electrode. The quantum dot light emitting device includes an electron transport layer located between the quantum dot light emitting layer and the second electrode. The quantum dot light emitting device includes a filling layer located between the electron transport layer and the quantum dot light emitting layer and embedded in the quantum dot light emitting layer.

公开(公告)号：US10355022B2

公开(公告)日：2019-07-16

申请号：US15393030

申请日：2016-12-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jian Min ,  Xiaolong Li ,  Zhengyin Xu ,  Tao Gao ,  Dong Li ,  Shuai Zhang

IPC: H01L27/12 ,  H01L29/78 ,  H01L21/00 ,  H01L29/786

Abstract: A thin film transistor, a method for fabricating the same, an array substrate, and a display device are provided. The method comprises forming an active layer on a substrate, wherein source-and-drain-to-be-formed regions of the active layer are thicker than a semiconductor region between the source-and-drain-to-be-formed regions, and by a patterning process, forming a gate on the active layer, and forming a pattern of source and drain in the source-and-drain-to-be-formed regions of the active layer.

公开(公告)号：US10248240B2

公开(公告)日：2019-04-02

申请号：US15668144

申请日：2017-08-03

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Jing Wang ,  Ming Zhang ,  Xiaodong Xie ,  Min He ,  Dong Li

IPC: G06F3/044 ,  G06F3/041 ,  G02F1/1333 ,  G02F1/1343

Abstract: A touch substrate and a method for forming the same, and a touch display device are provided, relating to the field of display technology. The touch substrate includes a touch region and a light-shielding region surrounding the touch region, a light-shielding pattern is arranged at the light-shielding region; the touch substrate further includes a first touch electrode and a second touch electrode crossing each other and insulated from each other and virtual electrodes at regions defined by the first touch electrode and the second touch electrode, and each virtual electrode is spaced apart from the first touch electrode and the second touch electrode; the first touch electrode, the second touch electrode and the virtual electrodes contact the light-shielding pattern; portions of adjacent virtual electrodes at the light-shielding region are connected to each other via a first bridge, the first bridge is insulated from the first touch electrode and the second touch electrode; and a first ground wire is arranged at the light-shielding region, and the first ground wire is electrically connected to the virtual electrodes connected to each other via the first bridge.

公开(公告)号：US09793366B2

公开(公告)日：2017-10-17

申请号：US15131175

申请日：2016-04-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zheng Liu ,  Dong Li ,  Xiaolong Li

IPC: H01L29/423 ,  H01L29/49 ,  H01L27/12 ,  H01L27/32 ,  H01L29/66 ,  H01L29/45 ,  H01L29/786

CPC classification number: H01L29/42372 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1259 ,  H01L27/1262 ,  H01L27/1288 ,  H01L27/32 ,  H01L27/3225 ,  H01L27/3248 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/66765 ,  H01L29/78678

Abstract: An array substrate, a method for fabricating the same, a display panel and a display device are disclosed. The array substrate comprises a display area and a non-display area that is outside the display area. The method comprises: forming a metal layer on a base substrate, the metal layer comprising a conductive pattern in the display area and a first electrode in the non-display area; forming a protective layer on the metal layer, a thickness of the protection layer in the non-display area being less than a thickness of the protection layer in the display area; forming a display electrode layer on the protection layer and removing the display electrode layer in the non-display area; and removing the protection layer in the non-display area.

公开(公告)号：US20170194461A1

公开(公告)日：2017-07-06

申请号：US15350844

申请日：2016-11-14

Applicant: BOE Technology Group Co., Ltd.

Inventor： Xiaolong Li ,  Zheng Liu ,  Dong Li ,  Huijuan Zhang ,  Jian Min

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/786 ,  H01L21/3065

CPC classification number: H01L29/66757 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/3065 ,  H01L21/32115 ,  H01L21/32132 ,  H01L29/78675

Abstract: A method for processing a polysilicon thin film and a method for fabricating a thin film transistor are provided. The method for processing a polysilicon thin film includes: etching the polysilicon thin film using etching particles. An angle between an incident direction of the etching particles and the polysilicon thin film is larger than 0° and less than 90°.

公开(公告)号：US12185615B2

公开(公告)日：2024-12-31

申请号：US17756178

申请日：2021-03-11

Applicant: Beijing BOE Technology Development Co., Ltd. ,  BOE Technology Group Co., Ltd.

Inventor： Dong Li

IPC: H01L23/00 ,  H10K50/15 ,  H10K50/16 ,  H10K59/80 ,  H10K71/10 ,  H10K50/115 ,  H10K59/35 ,  H10K101/40 ,  H10K102/00

Abstract: Embodiments of the present disclosure disclose a green quantum dot light-emitting device, a method for manufacturing the same, and a display apparatus, including: a first cathode and a first anode opposite to each other, a green quantum dot light-emitting layer between the first cathode and the first anode, a first electron transport layer between the first cathode and the green quantum dot light-emitting layer, and a first hole transport layer between the green quantum dot light-emitting layer and the first anode; wherein a material of the first electron transport layer includes an oxide containing Zn, a thickness of the first electron transport layer is in the range of 10 nm to 40 nm, and a thickness of the first hole transport layer is in the range of 26 nm to 39 nm.

公开(公告)号：US12074249B2

公开(公告)日：2024-08-27

申请号：US17270984

申请日：2020-05-12

Applicant: BEIJING BOE TECHNOLOGY DEVELOPMENT CO., LTD. ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Dong Li ,  Zhuo Chen

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/14 ,  H10K50/15 ,  H10K71/00

CPC classification number: H01L33/06 ,  H01L33/005 ,  H01L33/14 ,  H10K50/15 ,  H10K71/00

Abstract: A quantum dot light emitting structure and a method for manufacturing the same, an array substrate, and a display device are disclosed. The quantum dot light emitting structure includes a quantum dot light emitting layer, an electrode, and an electron transport layer located between the quantum dot light emitting layer and the electrode; the quantum dot light emitting structure further includes an electron blocking layer located in the electron transport layer.