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63 条记录 (耗时 0.029 秒)

    Method of depositing materials on a non-planar surface
    51.
    发明授权
    Method of depositing materials on a non-planar surface 失效

    公开(公告)号：US08580037B2

    公开(公告)日：2013-11-12

    申请号：US12482263

    申请日：2009-06-10

    申请人： Ratson Morad

    发明人： Ratson Morad

    IPC分类号： C23C16/50 ,  C23C16/00 ,  C23F1/00 ,  H01L21/306

    CPC分类号： C30B23/02 ,  H01L21/02568 ,  H01L21/02631 ,  H01L21/67754 ,  H01L21/6776

    摘要： A method of depositing materials on a non-planar surface is disclosed. The method is effectuated by rotating non-planar substrates as they travel down a translational path of a processing chamber. As the non-planar substrates simultaneously rotate and translate down a processing chamber, the rotation exposes the whole or any desired portion of the surface area of the non-planar substrates to the deposition process, allowing for uniform deposition as desired. Alternatively, any predetermined pattern is able to be exposed on the surface of the non-planar substrates. Such a method effectuates manufacture of non-planar semiconductor devices, including, but not limited to, non-planar light emitting diodes, non-planar photovoltaic cells, and the like.

    Method of depositing materials on a non-planar surface
    52.
    发明授权
    Method of depositing materials on a non-planar surface 失效
    在非平面表面上沉积材料的方法

    公开(公告)号：US08318609B2

    公开(公告)日：2012-11-27

    申请号：US12633589

    申请日：2009-12-08

    申请人： Dan Marohl ,  Timothy J. Franklin ,  Ratson Morad

    发明人： Dan Marohl ,  Timothy J. Franklin ,  Ratson Morad

    IPC分类号： H01L21/31

    CPC分类号： H01L21/67706 ,  C23C14/505 ,  H01L21/6776

    摘要： A carrier for effectuating semiconductor processing on a non-planar substrate is disclosed. The carrier is configured for holding at least one non-planar substrate throughout a semiconductor processing step and concurrently rotating non-planar substrates as they travel down a translational path of a processing chamber. As the non-planar substrates simultaneously rotate and translate down a processing chamber, the rotation exposes the whole or any desired portion of the surface area of the non-planar substrates to the deposition process, allowing for uniform deposition as desired. Alternatively, any predetermined pattern is able to be exposed on the surface of the non-planar substrates. Such a carrier effectuates manufacture of non-planar semiconductor devices, including, but not limited to, non-planar light emitting diodes, non-planar photovoltaic cells, and the like.

    摘要翻译： 公开了一种用于在非平面基板上实现半导体处理的载体。 载体构造成用于在整个半导体处理步骤中保持至少一个非平面基底，并且当它们沿着处理室的平移路径行进时同时旋转非平面基底。 随着非平面基板同时旋转并且向下平移处理室，旋转将非平面基板的表面积的整个或任何所需部分暴露于沉积工艺，从而允许根据需要均匀沉积。 或者，任何预定图案能够暴露在非平面基板的表面上。 这种载体实现非平面半导体器件的制造，包括但不限于非平面发光二极管，非平面光伏电池等。

    Carrier used for deposition of materials on a non-planar surface
    55.
    发明申请
    Carrier used for deposition of materials on a non-planar surface 审中-公开
    用于在非平面表面上沉积材料的载体

    公开(公告)号：US20090011573A1

    公开(公告)日：2009-01-08

    申请号：US11983239

    申请日：2007-11-07

    申请人： Dan Marohl ,  Timothy J. Franklin ,  Ratson Morad

    发明人： Dan Marohl ,  Timothy J. Franklin ,  Ratson Morad

    IPC分类号： B05C13/00 ,  B23H7/26 ,  H01L21/36

    CPC分类号： H01L21/67706 ,  C23C14/505 ,  H01L21/6776

    摘要： A carrier for effectuating semiconductor processing on a non-planar substrate is disclosed. The carrier is configured for holding at least one non-planar substrate throughout a semiconductor processing step and concurrently rotating non-planar substrates as they travel down a translational path of a processing chamber. As the non-planar substrates simultaneously rotate and translate down a processing chamber, the rotation exposes the whole or any desired portion of the surface area of the non-planar substrates to the deposition process, allowing for uniform deposition as desired. Alternatively, any predetermined pattern is able to be exposed on the surface of the non-planar substrates. Such a carrier effectuates manufacture of non-planar semiconductor devices, including, but not limited to, non-planar light emitting diodes, non-planar photovoltaic cells, and the like.

    摘要翻译： 公开了一种用于在非平面基板上实现半导体处理的载体。 载体构造成用于在整个半导体处理步骤中保持至少一个非平面基底，并且当它们沿着处理室的平移路径行进时同时旋转非平面基底。 随着非平面基板同时旋转并且向下平移处理室，旋转将非平面基板的表面积的整个或任何所需部分暴露于沉积工艺，从而允许根据需要均匀沉积。 或者，任何预定图案能够暴露在非平面基板的表面上。 这种载体实现非平面半导体器件的制造，包括但不限于非平面发光二极管，非平面光伏电池等。

    Method and apparatus for electro-chemical processing
    58.
    发明授权
    Method and apparatus for electro-chemical processing 失效
    电化学处理方法和装置

    公开(公告)号：US06896776B2

    公开(公告)日：2005-05-24

    申请号：US09739139

    申请日：2000-12-18

    申请人： Wei-Yung Hsu ,  Liang-Yuh Chen ,  Ratson Morad ,  Daniel A. Carl ,  Sasson Somekh

    发明人： Wei-Yung Hsu ,  Liang-Yuh Chen ,  Ratson Morad ,  Daniel A. Carl ,  Sasson Somekh

    IPC分类号： B24B37/00 ,  B24B37/04 ,  C25D5/00 ,  C25D5/22 ,  C25D7/12 ,  H01L21/288 ,  H01L21/304 ,  H01L21/321 ,  H01L21/768 ,  C25D1/00 ,  C25D17/00

    CPC分类号： C25D7/123 ,  C25D5/06 ,  C25D5/22 ,  C25D17/001 ,  C25D17/008 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76877

    摘要： A method and apparatus is provided for depositing and planarizing a material layer on a substrate. In one embodiment, an apparatus is provided which includes a partial enclosure, a permeable disc, a diffuser plate and optionally an anode. A substrate carrier is positionable above the partial enclosure and is adapted to move a substrate into and out of contact or close proximity with the permeable disc. The partial enclosure and the substrate carrier are rotatable to provide relative motion between a substrate and the permeable disc. In another aspect, a method is provided in which a substrate is positioned in a partial enclosure having an electrolyte therein at a fist distance from a permeable disc. A current is optionally applied to the surface of the substrate and a first thickness is deposited on the substrate. Next, the substrate is positioned closer to the permeable disc and a second thickness is deposited on the substrate. During the deposition, the partial enclosure and the substrate are rotated relative one another.

    摘要翻译： 提供了一种用于沉积和平坦化衬底上的材料层的方法和装置。 在一个实施例中，提供了一种装置，其包括部分外壳，可渗透盘，漫射板和任选的阳极。 衬底载体可定位在部分外壳上方，并且适于将衬底移动到与可渗透盘接触或接近的位置。 部分外壳和基板载体可旋转以提供基板和可渗透盘之间的相对运动。 在另一方面，提供了一种方法，其中将基板定位在其中具有电解质的部分封闭件中，其中离开可渗透盘的第一距离。 任选地将电流施加到衬底的表面，并且在衬底上沉积第一厚度。 接下来，将基板定位成更靠近可渗透盘，并且在基板上沉积第二厚度。 在沉积期间，部分封闭物和基底相对彼此旋转。

    Method for chemical mechanical polishing of semiconductor substrates
    60.
    发明授权
    Method for chemical mechanical polishing of semiconductor substrates 失效
    半导体衬底的化学机械抛光方法

    公开(公告)号：US06821881B2

    公开(公告)日：2004-11-23

    申请号：US10199444

    申请日：2002-07-19

    申请人： Stan D. Tsai ,  Liang-Yuh Chen ,  Lizhong Sun ,  Shijian Li ,  Feng Q. Liu ,  Rashid Mavliev ,  Ratson Morad ,  Daniel A. Carl

    发明人： Stan D. Tsai ,  Liang-Yuh Chen ,  Lizhong Sun ,  Shijian Li ,  Feng Q. Liu ,  Rashid Mavliev ,  Ratson Morad ,  Daniel A. Carl

    IPC分类号： H01L214763

    CPC分类号： H01L21/7684 ,  B24B37/042 ,  B24B49/16 ,  H01L21/3212 ,  Y02P80/30

    摘要： Methods and apparatus for processing substrates to improve polishing uniformity, improve planarization, remove residual material and minimize defect formation are provided. In one aspect, a method is provided for processing a substrate having a conductive material and a low dielectric constant material disposed thereon including polishing a substrate at a polishing pressures of about 2 psi or less and at platen rotational speeds of about 200 cps or greater. The polishing process may use an abrasive-containing polishing composition having up to about 1 wt. % of abrasives. The polishing process may be integrated into a multi-step polishing process.

    摘要翻译： 提供了用于处理基板以改善抛光均匀性，改善平面化，去除残留材料并最小化缺陷形成的方法和装置。 在一个方面，提供了一种用于处理具有导电材料和设置在其上的低介电常数材料的衬底的方法，其包括在约2psi或更小的抛光压力和约200cps或更高的压板旋转速度下抛光衬底。 抛光工艺可以使用含有至多约1重量％的磨料的抛光组合物。 磨料的百分比。 抛光工艺可以集成到多步抛光工艺中。