公开(公告)号：US08524611B2

公开(公告)日：2013-09-03

申请号：US12938962

申请日：2010-11-03

申请人： Ratson Morad

发明人： Ratson Morad

IPC分类号： H01L21/67 ,  H01L21/677 ,  C23C14/50 ,  C23C14/56 ,  C23C16/458 ,  C23C16/54

CPC分类号： H01L21/02104 ,  C23C14/505 ,  C23C14/568 ,  C23C16/458 ,  C23C16/54 ,  H01L21/67173 ,  H01L21/67207 ,  H01L21/67276 ,  H01L21/67706 ,  H01L21/67745 ,  H01L21/67748 ,  H01L21/6776

摘要： In manufacturing a semiconductor device, a first chamber is provided. An opening couples the first chamber to a first environment through which at least one substrate can pass. A first seal environmentally isolates the first chamber from the first environment. A process chamber is coupled to the first chamber. Another seal environmental isolates the first and the process chambers. The substrate is placed within the first chamber, and the first chamber and the outside environment are isolated. The second opening is opened, and the substrate moves into the semiconductor process chamber. The first chamber is again environmentally isolated from the second volume. A semiconductor processing step is performed on the substrate within the processing chamber. While the substrate is processed, the substrate is rotated and translated through the processing chamber.

摘要翻译： 在制造半导体器件时，提供第一腔室。 一个开口将第一个室耦合到第一个环境中，至少一个基板可通过该第一环境通过。 第一个密封环境将第一个室与第一个环境隔离。 处理室联接到第一室。 另一种密封环境隔离了第一和处理室。 将基板放置在第一室内，并且隔离第一室和外部环境。 打开第二开口，并且基板移动到半导体处理室中。 第一个室再次与第二个容器环境隔离。 在处理室内的基板上进行半导体处理步骤。 当衬底被处理时，衬底旋转并通过处理室平移。

公开(公告)号：US20130112237A1

公开(公告)日：2013-05-09

申请号：US13291531

申请日：2011-11-08

申请人： GILAD ALMOGY ,  Ratson Morad ,  Michael Jeffrey Starkey ,  Andrew Burke Campbell

发明人： GILAD ALMOGY ,  Ratson Morad ,  Michael Jeffrey Starkey ,  Andrew Burke Campbell

IPC分类号： H01L31/058 ,  F25B27/00 ,  F24J2/38 ,  H01L31/052 ,  F24J2/04

CPC分类号： H02S40/44 ,  F24S23/70 ,  F24S30/425 ,  F24S50/00 ,  F24S50/20 ,  F24S2023/835 ,  H01L31/0547 ,  H02S20/32 ,  Y02E10/47 ,  Y02E10/52 ,  Y02E10/60

摘要： Systems, methods, and apparatus by which solar energy may be collected to provide electricity, heat, or a combination of electricity and heat are disclosed herein.

摘要翻译： 本文公开了可以收集太阳能以提供电，热或电和热的组合的系统，方法和设备。

公开(公告)号：US07563725B2

公开(公告)日：2009-07-21

申请号：US11801469

申请日：2007-05-09

申请人： Ratson Morad

发明人： Ratson Morad

IPC分类号： H01L21/31

CPC分类号： C30B23/02 ,  H01L21/02568 ,  H01L21/02631 ,  H01L21/67754 ,  H01L21/6776

摘要： A method of depositing materials on a non-planar surface is disclosed. The method is effectuated by rotating non-planar substrates as they travel down a translational path of a processing chamber. As the non-planar substrates simultaneously rotate and translate down a processing chamber, the rotation exposes the whole or any desired portion of the surface area of the non-planar substrates to the deposition process, allowing for uniform deposition as desired. Alternatively, any predetermined pattern is able to be exposed on the surface of the non-planar substrates. Such a method effectuates manufacture of non-planar semiconductor devices, including, but not limited to, non-planar light emitting diodes, non-planar photovoltaic cells, and the like.

摘要翻译： 公开了一种在非平面表面上沉积材料的方法。 该方法通过旋转非平面基板沿着处理室的平移路径向下移动来实现。 随着非平面基板同时旋转并且向下平移处理室，旋转将非平面基板的表面积的整个或任何所需部分暴露于沉积工艺，从而允许根据需要均匀沉积。 或者，任何预定图案能够暴露在非平面基板的表面上。 这种方法实现了非平面半导体器件的制造，包括但不限于非平面发光二极管，非平面光伏电池等。

公开(公告)号：US20050221603A1

公开(公告)日：2005-10-06

申请号：US11137301

申请日：2005-05-24

申请人： Ratson Morad ,  Ho Seon Shin

发明人： Ratson Morad ,  Ho Seon Shin

IPC分类号： H01L21/00 ,  H01L21/4763 ,  H01L21/768

CPC分类号： H01L21/67167 ,  H01L21/67184 ,  H01L21/67207 ,  H01L21/76841

摘要： Provided herein is a system architecture of semiconductor manufacturing equipment, wherein degas chamber(s) are integrated to the conventional pass-through chamber location. Also provided herein is a system/method for depositing Cu barrier and seed layers on a semiconductor wafer. This system comprises a front opening unified pod(s), a single wafer loadlock chamber(s), a degas chamber(s), a preclean chamber(s), a Ta or TaN process chamber(s), and a Cu process chamber(s). The degas chamber is integrated to a pass-through chamber. Such system may achieve system throughput higher than 100 wafers per hour.

摘要翻译： 本文提供了一种半导体制造设备的系统架构，其中脱气室与常规的通过腔室位置集成。 本文还提供了用于在半导体晶片上沉积Cu势垒和种子层的系统/方法。 该系统包括前开口统一吊舱，单个晶片负载锁定室，脱气室，预净化室，Ta或TaN处理室，以及Cu处理室 （s）。 脱气室集成到通气室。 这样的系统可以实现高于每小时100个晶片的系统吞吐量。

公开(公告)号：US06884724B2

公开(公告)日：2005-04-26

申请号：US09939323

申请日：2001-08-24

申请人： Wei-Yung Hsu ,  Liang-Yuh Chen ,  Ratson Morad ,  Daniel A. Carl

发明人： Wei-Yung Hsu ,  Liang-Yuh Chen ,  Ratson Morad ,  Daniel A. Carl

IPC分类号： H01L21/288 ,  H01L21/321 ,  H01L21/20

CPC分类号： H01L21/7684 ,  H01L21/3212

摘要： Methods and apparatus for planarizing a substrate surface are provided. In one aspect, a method is provided for planarizing a substrate surface including polishing a first conductive material to a barrier layer material, depositing a second conductive material on the first conductive material by an electrochemical deposition technique, and polishing the second conductive material and the barrier layer material to a dielectric layer. In another aspect, a processing system is provided for forming a planarized layer on a substrate, the processing system including a computer based controller configured to cause the system to polish a first conductive material to a barrier layer material, deposit a second conductive material on the first conductive material by an electrochemical deposition technique, and polish the second conductive material and the barrier layer material to a dielectric layer.

公开(公告)号：US06635157B2

公开(公告)日：2003-10-21

申请号：US09867780

申请日：2001-05-29

申请人： Yezdi Dordi ,  Donald J. Olgado ,  Ratson Morad ,  Peter Hey ,  Mark Denome ,  Michael Sugarman ,  Mark Lloyd ,  Joseph Stevens ,  Dan Marohl ,  Ho Seon Shin ,  Eugene Ravinovich ,  Robin Cheung ,  Ashok K. Sinha ,  Avi Tepman ,  Dan Carl ,  George Birkmaier

发明人： Yezdi Dordi ,  Donald J. Olgado ,  Ratson Morad ,  Peter Hey ,  Mark Denome ,  Michael Sugarman ,  Mark Lloyd ,  Joseph Stevens ,  Dan Marohl ,  Ho Seon Shin ,  Eugene Ravinovich ,  Robin Cheung ,  Ashok K. Sinha ,  Avi Tepman ,  Dan Carl ,  George Birkmaier

IPC分类号： C25D1700

CPC分类号： H01L21/6723 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06 ,  C25D21/02 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/67126 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/67745 ,  H01L21/68707 ,  H01L21/68721 ,  H01L21/68728 ,  H01L21/68742 ,  H05K3/241

摘要： The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.

公开(公告)号：US06599368B1

公开(公告)日：2003-07-29

申请号：US09680984

申请日：2000-10-05

申请人： Ratson Morad ,  Ho Seon Shin

发明人： Ratson Morad ,  Ho Seon Shin

IPC分类号： C23C1600

CPC分类号： H01L21/67167 ,  C23C16/0227 ,  C23C16/54 ,  H01L21/67184 ,  H01L21/67207

摘要： A semiconductor manufacturing equipment wherein degas chamber(s) are integrated to the conventional pass-through chamber location. A preferred embodiment for depositing Cu barrier and seed layers on a semiconductor wafer comprises a front opening unified pod(s), a single wafer load lock chamber(s), a degas chamber(s), a preclean chamber(s), a Ta or TaN process chamber(s), and a Cu process chamber(s). The degas chamber is integrated to a pass-through chamber. Such system may achieve system throughput higher than 100 wafers per hour.

摘要翻译： 一种半导体制造设备，其中脱气室与常规的通过腔室位置集成。 用于在半导体晶片上沉积Cu屏障和种子层的优选实施例包括前开口统一的盒，单个晶片装载锁定室，脱气室，预净化室，Ta 或TaN处理室和一个或多个Cu处理室。 脱气室集成到通气室。 这样的系统可以实现高于每小时100个晶片的系统吞吐量。

公开(公告)号：US06276072B1

公开(公告)日：2001-08-21

申请号：US09396007

申请日：1999-09-15

申请人： Ratson Morad ,  Ho Seon Shin ,  Robin Cheung ,  Igor Kogan

发明人： Ratson Morad ,  Ho Seon Shin ,  Robin Cheung ,  Igor Kogan

IPC分类号： F26B700

CPC分类号： H01L21/67109 ,  H01L21/67115 ,  H01L21/67748

摘要： A method and apparatus for heating and cooling a substrate are provided. A chamber is provided that comprises a heating mechanism adapted to heat a substrate positioned proximate the heating mechanism, a cooling mechanism spaced from the heating mechanism and adapted to cool a substrate positioned proximate the cooling mechanism, and a transfer mechanism adapted to transfer a substrate between the position proximate the heating mechanism and the position proximate the cooling mechanism. The heating mechanism preferably comprises a heated substrate support adapted to support a substrate and to heat the supported substrate to a predetermined temperature, and the cooling mechanism preferably comprises a cooling plate. The transfer mechanism may comprise, for example, a wafer lift hoop having a plurality of fingers adapted to support a substrate, or a plurality of wafer lift pins. A dry gas source may be coupled to the chamber and adapted to supply a dry gas thereto. The chamber preferably includes a pump adapted to evacuate the chamber to a predetermined pressure during at least cooling. A method for heating and cooling a substrate also is provided.

摘要翻译： 提供了一种用于加热和冷却衬底的方法和装置。 提供了一种室，其包括适于加热位于加热机构附近的基板的加热机构，与加热机构间隔开并适于冷却位于冷却机构附近的基板的冷却机构，以及适于将基板 靠近加热机构的位置和靠近冷却机构的位置。 加热机构优选地包括适于支撑基板并将受支撑基板加热到预定温度的加热基板支撑件，并且冷却机构优选地包括冷却板。 转移机构可以包括例如具有适于支撑衬底的多个指状物的晶片提升环或多个晶片提升销。 干燥气源可以连接到室并适于向其供应干燥气体。 腔室优选地包括适于在至少冷却期间将腔室排空到预定压力的泵。 还提供了一种用于加热和冷却基板的方法。

公开(公告)号：US20110284055A1

公开(公告)日：2011-11-24

申请号：US13079193

申请日：2011-04-04

申请人： Gilad Almogy ,  Ratson Morad ,  Ofer Ricklis ,  Nathan P. Beckett ,  Amir Bar ,  Andrey Bochkariov ,  Amir A. Weiss ,  Radu Raduta ,  Brian E. Atchley

发明人： Gilad Almogy ,  Ratson Morad ,  Ofer Ricklis ,  Nathan P. Beckett ,  Amir Bar ,  Andrey Bochkariov ,  Amir A. Weiss ,  Radu Raduta ,  Brian E. Atchley

IPC分类号： H01L31/058 ,  F24J2/46 ,  H01L31/052 ,  F24J2/04 ,  F24J2/38 ,  F24J2/12

CPC分类号： H01L31/0525 ,  F24S23/74 ,  F24S30/425 ,  F24S40/52 ,  F24S2030/134 ,  H01L31/0521 ,  H01L31/0547 ,  H02S40/44 ,  Y02B10/20 ,  Y02B10/70 ,  Y02E10/45 ,  Y02E10/47 ,  Y02E10/52 ,  Y02E10/60

摘要： Systems, methods, and apparatus by which solar energy may be collected to provide electricity, heat, or a combination of heat and electricity are disclosed herein.

摘要翻译： 本文公开了可以收集太阳能以提供电，热或热和电力的组合的系统，方法和装置。

公开(公告)号：US20110045674A1

公开(公告)日：2011-02-24

申请号：US12938962

申请日：2010-11-03

申请人： Ratson Morad

发明人： Ratson Morad

IPC分类号： H01L21/18 ,  C23C14/34

CPC分类号： H01L21/02104 ,  C23C14/505 ,  C23C14/568 ,  C23C16/458 ,  C23C16/54 ,  H01L21/67173 ,  H01L21/67207 ,  H01L21/67276 ,  H01L21/67706 ,  H01L21/67745 ,  H01L21/67748 ,  H01L21/6776

摘要： In manufacturing a semiconductor device, a first chamber is provided. An opening couples the first chamber to a first environment through which at least one substrate can pass. A first seal environmentally isolates the first chamber from the first environment. A process chamber is coupled to the first chamber. Another seal environmental isolates the first and the process chambers. The substrate is placed within the first chamber, and the first chamber and the outside environment are isolated. The second opening is opened, and the substrate moves into the semiconductor process chamber. The first chamber is again environmentally isolated from the second volume. A semiconductor processing step is performed on the substrate within the processing chamber. While the substrate is processed, the substrate is rotated and translated through the processing chamber.

摘要翻译： 在制造半导体器件时，提供第一腔室。 一个开口将第一个室耦合到第一个环境中，至少一个基板可通过该第一环境通过。 第一个密封环境将第一个室与第一个环境隔离。 处理室联接到第一室。 另一种密封环境隔离了第一和处理室。 将基板放置在第一室内，并且隔离第一室和外部环境。 打开第二开口，并且基板移动到半导体处理室中。 第一个室再次与第二个容器环境隔离。 在处理室内的基板上进行半导体处理步骤。 当衬底被处理时，衬底旋转并通过处理室平移。