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137 条记录 (耗时 0.022 秒)

    Electroplated magnetic film for read-write applications
    51.
    发明授权
    Electroplated magnetic film for read-write applications 有权
    用于读写应用的电镀磁膜

    公开(公告)号：US08118990B2

    公开(公告)日：2012-02-21

    申请号：US11431261

    申请日：2006-05-10

    申请人： Xiaomin Liu ,  Feiyue Li ,  Cherng-Chyi Han

    发明人： Xiaomin Liu ,  Feiyue Li ,  Cherng-Chyi Han

    IPC分类号： C25D3/56

    CPC分类号： C25D3/562 ,  C25D5/18 ,  G11B5/3163 ,  H01F41/26

    摘要： A process is described for the fabrication, through electrodeposition, of FexCoyNiz (x=60-71, y=25-35, z=0-5) films that have, in their as-deposited form, a saturation magnetization of at least 24 kG and a coercivity of less than 0.3 Oe. A key feature is the addition of aryl sulfinates to the plating bath along with a suitable seed layer.

    摘要翻译： 描述了通过电沉积制造FexCoyNiz（x = 60-71，y = 25-35，z = 0-5）膜的方法，其具有以其沉积形式的至少24个饱和磁化强度 kG，矫顽力小于0.3 Oe。 一个关键的特征是在适当的种子层的同时向镀浴中加入芳基亚硫酸盐。

    Method for making a perpendicular magnetic recording write head with a self aligned stitched write shield
    52.
    发明授权
    Method for making a perpendicular magnetic recording write head with a self aligned stitched write shield 失效
    一种具有自对准缝合写屏蔽的垂直磁记录写头的方法

    公开(公告)号：US07657992B2

    公开(公告)日：2010-02-09

    申请号：US12001429

    申请日：2007-12-11

    申请人： Cherng-Chyi Han ,  Kenichi Takano

    发明人： Cherng-Chyi Han ,  Kenichi Takano

    IPC分类号： G11B5/11 ,  G11B5/17

    CPC分类号： G11B5/1278 ,  G11B5/3116 ,  G11B5/3143 ,  G11B5/3163 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49048 ,  Y10T29/4906 ,  Y10T29/49062

    摘要： A method of making a perpendicular magnetic recording (PMR) head with single or double coil layers and with a small write shield stitched onto a main write shield. The stitched shield allows the main write pole to produce a vertical write field with sharp vertical gradients that is reduced on both sides of the write pole so that adjacent track erasures are eliminated. From a fabrication point of view, both the main pole and the stitched shield are defined and formed using a single photolithographic process, a trim mask and CMP lapping process so that the main shield can be stitched onto a self-aligned main pole and stitched shield.

    摘要翻译： 一种制造具有单线圈或双线圈层的垂直磁记录（PMR）头和缝合在主写屏蔽上的小写保护层的方法。 拼接屏蔽允许主写柱产生垂直写入场，其尖锐的垂直梯度在写入极的两侧减小，从而消除相邻的轨迹擦除。 从制造的角度来看，使用单一光刻工艺，修剪掩模和CMP研磨工艺来限定和形成主极和缝合屏蔽物，使得主屏蔽可以缝合到自对准的主极和缝合屏蔽 。

    Perpendicular shield pole writer with tapered main pole and tapered non-magnetic top shaping layer
    53.
    发明申请
    Perpendicular shield pole writer with tapered main pole and tapered non-magnetic top shaping layer 有权
    垂直屏蔽极写入器，带锥形主极和锥形非磁性顶部成型层

    公开(公告)号：US20090116145A1

    公开(公告)日：2009-05-07

    申请号：US11982597

    申请日：2007-11-02

    申请人： Liejie Guan ,  Joe Smyth ,  Moris Dovek ,  Yoshitaka Sasaki ,  Cherng-Chyi Han

    发明人： Liejie Guan ,  Joe Smyth ,  Moris Dovek ,  Yoshitaka Sasaki ,  Cherng-Chyi Han

    IPC分类号： G11B5/127

    CPC分类号： G11B5/3116 ,  G11B5/1278 ,  G11B5/23 ,  G11B5/3163

    摘要： A PMR writer with a tapered main pole layer and tapered non-magnetic top-shaping layer is disclosed that minimizes trailing shield saturation. A second non-magnetic top shaping layer may be employed to reduce the effective TH size while the bulk of the trailing shield is thicker to allow a larger process window for back end processing. A sloped surface with one end at the ABS and a second end 0.05 to 0.3 microns from the ABS is formed at a 10 to 80 degree angle to the ABS and includes a sloped surface on the upper portion of the main pole layer and on the non-magnetic top shaping layer. An end is formed on the second non-magnetic top shaping layer at the second end of the sloped surface followed by forming a conformal write gap layer and then depositing the trailing shield on the write gap layer and along the ABS.

    摘要翻译： 公开了一种具有锥形主极层和锥形非磁性顶部成形层的PMR写入器，其使拖尾屏蔽饱和度最小化。 可以采用第二非磁性顶部成形层来减小有效的TH尺寸，同时尾部屏蔽的大部分较厚以允许用于后端处理的较大的工艺窗口。 在ABS处具有一端的倾斜表面和距离ABS的0.05至0.3微米的第二端与ABS形成10至80度的角度，并且包括在主极层的上部上的非倾斜表面， 磁顶成型层。 在倾斜表面的第二端处在第二非磁性顶部成形层上形成端部，随后形成共形写入间隙层，然后将后部屏蔽层沉积在写入间隙层上并沿着ABS。

    Method for making a perpendicular magnetic recording write head with a self aligned stitched write shield
    54.
    发明申请
    Method for making a perpendicular magnetic recording write head with a self aligned stitched write shield 失效
    一种具有自对准缝合写屏蔽的垂直磁记录写头的方法

    公开(公告)号：US20080094759A1

    公开(公告)日：2008-04-24

    申请号：US12001429

    申请日：2007-12-11

    申请人： Cherng-Chyi Han ,  Kenichi Takano

    发明人： Cherng-Chyi Han ,  Kenichi Takano

    IPC分类号： G11B5/10

    CPC分类号： G11B5/1278 ,  G11B5/3116 ,  G11B5/3143 ,  G11B5/3163 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49048 ,  Y10T29/4906 ,  Y10T29/49062

    摘要： A method of making a perpendicular magnetic recording (PMR) head with single or double coil layers and with a small write shield stitched onto a main write shield. The stitched shield allows the main write pole to produce a vertical write field with sharp vertical gradients that is reduced on both sides of the write pole so that adjacent track erasures are eliminated. From a fabrication point of view, both the main pole and the stitched shield are defined and formed using a single photolithographic process, a trim mask and CMP lapping process so that the main shield can be stitched onto a self-aligned main pole and stitched shield.

    摘要翻译： 一种制造具有单线圈或双线圈层的垂直磁记录（PMR）头和缝合在主写屏蔽上的小写保护层的方法。 拼接屏蔽允许主写柱产生垂直写入场，其尖锐的垂直梯度在写入极的两侧减小，从而消除相邻的轨迹擦除。 从制造的角度来看，使用单一光刻工艺，修剪掩模和CMP研磨工艺来限定和形成主极和缝合屏蔽物，使得主屏蔽可以缝合到自对准的主极和缝合屏蔽 。

    Electroplated magnetic film for read-write applications
    55.
    发明申请
    Electroplated magnetic film for read-write applications 有权
    用于读写应用的电镀磁膜

    公开(公告)号：US20070261967A1

    公开(公告)日：2007-11-15

    申请号：US11431261

    申请日：2006-05-10

    申请人： Xiaomin Liu ,  Feiyue Li ,  Cherng-Chyi Han

    发明人： Xiaomin Liu ,  Feiyue Li ,  Cherng-Chyi Han

    IPC分类号： C25D3/56

    CPC分类号： C25D3/562 ,  C25D5/18 ,  G11B5/3163 ,  H01F41/26

    摘要： A process is described for the fabrication, through electrodeposition, of FexCoyNiz (x=60-71, y=25-35, z=0-5) films that have, in their as-deposited form, a saturation magnetization of at least 24 kG and a coercivity of less than 0.3 Oe. A key feature is the addition of aryl sulfinates to the plating bath along with a suitable seed layer.

    摘要翻译： 描述了通过电沉积制造Fe x Sb x Ni x Z x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x（x = 35，z = 0-5）具有其沉积形式的至少24kG的饱和磁化强度和小于0.3Oe的矫顽力的膜。 一个关键的特征是在适当的种子层的同时向镀浴中加入芳基亚硫酸盐。

    ABS through aggressive stitching
    56.
    发明授权
    ABS through aggressive stitching 失效
    ABS通过积极的拼接

    公开(公告)号：US07251102B2

    公开(公告)日：2007-07-31

    申请号：US10782496

    申请日：2004-02-19

    申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Laurie Lauchlan ,  Lei Zhang

    发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Laurie Lauchlan ,  Lei Zhang

    IPC分类号： G11B5/127

    CPC分类号： G11B5/33 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/4906 ,  Y10T29/49062 ,  Y10T29/49064

    摘要： Aggressive (i.e. tight tolerance) stitching offers several advantages for magnetic write heads but at the cost of some losses during pole trimming. This problem has been overcome by replacing the alumina filler layer, that is used to protect the stitched pole during trimming, with a layer of electro-plated material. Because of the superior step coverage associated with the plating method of deposition, pole trimming can then proceed without the introduction of stresses to the stitched pole while it is being trimmed.

    摘要翻译： 积极（即紧公差）缝合为磁性写入头提供了几个优点，但是在极修整期间以一些损失为代价。 通过用一层电镀材料代替在修整期间用于保护缝合极的氧化铝填料层已经克服了这个问题。 由于与沉积电镀方法相关的优越的台阶覆盖，因此可以进行极细修剪，而不会在缝合极被修剪时引入应力。

    Robust protective layer for MTJ devices
    57.
    发明申请
    Robust protective layer for MTJ devices 审中-公开
    坚固的MTJ设备保护层

    公开(公告)号：US20070080381A1

    公开(公告)日：2007-04-12

    申请号：US11248965

    申请日：2005-10-12

    申请人： Chen-Jung Chien ,  Yu-Hsia Chen ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han

    发明人： Chen-Jung Chien ,  Yu-Hsia Chen ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han

    IPC分类号： H01L29/94

    CPC分类号： H01L43/12 ,  B82Y25/00 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3268 ,  H01F41/32 ,  H01L43/08

    摘要： MTJ devices commonly degrade when subjected to the heat treatments required by subsequent further processing. This problem has been overcome by protecting the MTJ's sidewalls with a two layer laminate. The first layer is laid down under oxygen-free conditions, no attempt being made to replace any oxygen that is lost during the deposition. This is followed immediately by the deposition of the second layer (usually, but not mandatorily, of the same material as the first layer) in the presence of some oxygen.

    摘要翻译： 当经过后续进一步处理所需的热处理时，MTJ装置通常会降解。 通过用双层层压板保护MTJ的侧壁已经克服了这个问题。 第一层被放置在无氧条件下，没有试图取代沉积过程中损失的任何氧气。 这是在存在一些氧气的情况下立即通过沉积第二层（通常但不强制地与第一层相同的材料）沉积。

    Method to make abutted junction GMR head without lead shunting
    58.
    发明授权
    Method to make abutted junction GMR head without lead shunting 失效
    在没有引线分流的情况下制造对接接头GMR头的方法

    公开(公告)号：US07196876B2

    公开(公告)日：2007-03-27

    申请号：US10236359

    申请日：2002-09-06

    申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Pokang Wang

    发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Pokang Wang

    IPC分类号： G11B5/39 ,  G11B5/33 ,  G11B5/127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3163 ,  G11B5/3903 ,  Y10T29/49044 ,  Y10T29/49052

    摘要： A method for forming an abutted junction GMR bottom spin valve sensor in which the free layer has a maximum effective length due to the elimination or minimization of bias layer and conducting lead layer overspreading onto the sensor element and the consequent reduction of current shunting. The overspreading is eliminated by forming a thin dielectric layer on the upper surface of the sensor element. When the biasing and conducting leads are formed on the abutted junction, they overspread onto this layer and the overspread can be removed by an ion-milling process during which the dielectric layer protects the sensor.

    摘要翻译： 用于形成邻接结GMR底部自旋阀传感器的方法，其中自由层由于偏置层的消除或最小化而导致最大有效长度，并且导致引线层过度传播到传感器元件上，从而减少了电流分流。 通过在传感器元件的上表面上形成薄的电介质层来消除超扩展。 当偏置和导电引线形成在邻接接头上时，它们被扩展到该层上，并且可以通过离子铣削工艺去除超扩展，其中电介质层保护传感器。