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39 条记录 (耗时 0.027 秒)

    Robust protective layer for MTJ devices
    1.
    发明申请
    Robust protective layer for MTJ devices 审中-公开
    坚固的MTJ设备保护层

    公开(公告)号：US20070080381A1

    公开(公告)日：2007-04-12

    申请号：US11248965

    申请日：2005-10-12

    申请人： Chen-Jung Chien ,  Yu-Hsia Chen ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han

    发明人： Chen-Jung Chien ,  Yu-Hsia Chen ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han

    IPC分类号： H01L29/94

    CPC分类号： H01L43/12 ,  B82Y25/00 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3268 ,  H01F41/32 ,  H01L43/08

    摘要： MTJ devices commonly degrade when subjected to the heat treatments required by subsequent further processing. This problem has been overcome by protecting the MTJ's sidewalls with a two layer laminate. The first layer is laid down under oxygen-free conditions, no attempt being made to replace any oxygen that is lost during the deposition. This is followed immediately by the deposition of the second layer (usually, but not mandatorily, of the same material as the first layer) in the presence of some oxygen.

    摘要翻译： 当经过后续进一步处理所需的热处理时，MTJ装置通常会降解。 通过用双层层压板保护MTJ的侧壁已经克服了这个问题。 第一层被放置在无氧条件下，没有试图取代沉积过程中损失的任何氧气。 这是在存在一些氧气的情况下立即通过沉积第二层（通常但不强制地与第一层相同的材料）沉积。

    Junction stability and yield for spin valve heads
    5.
    发明授权
    Junction stability and yield for spin valve heads 失效
    自旋阀头的结点稳定性和产量

    公开(公告)号：US06879474B2

    公开(公告)日：2005-04-12

    申请号：US10718878

    申请日：2003-11-21

    申请人： Chen-Jung Chien ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han ,  Moris Dovek ,  Po-Kang Wang ,  Mao-Min Chen

    发明人： Chen-Jung Chien ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han ,  Moris Dovek ,  Po-Kang Wang ,  Mao-Min Chen

    IPC分类号： G01R33/09 ,  G11B5/31 ,  G11B5/39 ,  H01L43/08 ,  H01L43/12

    CPC分类号： B82Y10/00 ,  G11B5/313 ,  G11B5/3903 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

    摘要： The possibility of shorting between a spin valve and its underlying magnetic shield layer can be largely eliminated by choosing the bottom spin valve structure. However, doing so causes the hard longitudinal bias that is standard for all such devices to degrade. The present invention overcomes this problem by inserting a thin NiCr, Ni, Fe, or Cr layer between the antiferromagnetic layer and the longitudinal bias layers. This provides a smoother surface for the bias layers to be deposited onto, thereby removing structural distortions to the longitudinal bias layer that would otherwise be present. A process for manufacturing the structure is also described.

    摘要翻译： 通过选择底部自旋阀结构，可以大大消除自旋阀与其下面的磁屏蔽层之间短路的可能性。 然而，这样做会导致所有这些设备的标准硬的纵向偏差降级。 本发明通过在反铁磁层和纵向偏置层之间插入薄的NiCr，Ni，Fe或Cr层来克服这个问题。 这为偏压层沉积提供了更平滑的表面，从而消除了否则将存在的纵向偏置层的结构变形。 还描述了用于制造该结构的方法。

    Process for manufacturing a spin valve recording head
    9.
    发明授权
    Process for manufacturing a spin valve recording head 失效
    制造旋转阀记录头的方法

    公开(公告)号：US06668443B2

    公开(公告)日：2003-12-30

    申请号：US09917347

    申请日：2001-07-30

    申请人： Chen-Jung Chien ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han ,  Moris Dovek ,  Po-Kang Wang ,  Mao-Min Chen

    发明人： Chen-Jung Chien ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han ,  Moris Dovek ,  Po-Kang Wang ,  Mao-Min Chen

    IPC分类号： G11B5127

    CPC分类号： B82Y10/00 ,  G11B5/313 ,  G11B5/3903 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

    摘要： The possibility of shorting between a spin valve and its underlying magnetic shield layer can be largely eliminated by choosing the bottom spin valve structure. However, doing so causes the hard longitudinal bias that is standard for all such devices to degrade. The present invention overcomes this problem by inserting a thin NiCr, Ni, Fe, or Cr layer between the antiferromagnetic layer and the longitudinal bias layers. This provides a smoother surface for the bias layers to be deposited onto, thereby removing structural distortions to the longitudinal bias layer that would otherwise be present. A process for manufacturing the structure is also described.

    摘要翻译： 通过选择底部自旋阀结构，可以大大消除自旋阀与其下面的磁屏蔽层之间短路的可能性。 然而，这样做会导致所有这些设备的标准硬的纵向偏差降级。 本发明通过在反铁磁层和纵向偏置层之间插入薄的NiCr，Ni，Fe或Cr层来克服这个问题。 这为偏压层沉积提供了更平滑的表面，从而消除了否则将存在的纵向偏置层的结构变形。 还描述了用于制造该结构的方法。

    FCC-like trilayer AP2 structure for CPP GMR EM improvement
    10.
    发明申请
    FCC-like trilayer AP2 structure for CPP GMR EM improvement 有权
    FCC类三层AP2结构，用于CPP GMR EM改进

    公开(公告)号：US20090314632A1

    公开(公告)日：2009-12-24

    申请号：US12583742

    申请日：2009-08-25

    申请人： Kunliang Zhang ,  Dan Abels ,  Min Li ,  Chyu-Jiuh Torng ,  Chen-Jung Chien ,  Yu-Hsia Chen

    发明人： Kunliang Zhang ,  Dan Abels ,  Min Li ,  Chyu-Jiuh Torng ,  Chen-Jung Chien ,  Yu-Hsia Chen

    IPC分类号： C23C14/34 ,  B05D5/12

    CPC分类号： H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  H01F10/16 ,  H01F10/3236 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/302

    摘要： A method of forming a CPP-GMR spin valve having a pinned layer with an AP2/coupling/AP1 configuration is disclosed wherein the AP2 portion is a FCC-like trilayer having a composition represented by CoZFe(100-Z)/Fe(100-X)TaX/CoZFe(100-Z) or CoZFe(100-Z)/FeYCo(100-Y)/CoZFe(100-Z) where x is 3 to 30 atomic %, y is 40 to 100 atomic %, and z is 75 to 100 atomic %. Preferably, z is 90 to provide a face centered cubic structure that minimizes electromigration. Optionally, the middle layer is comprised of an Fe rich alloy such as FeCr, FeV, FeW, FeZr, FeNb, FeHf, or FeMo. EM performance is improved significantly compared to a spin valve with a conventional AP2 Co50Fe50 or Co75Fe25 single layer. MR ratio is also increased and RA is maintained at an acceptable level. The coupling layer is preferably Ru and the AP1 layer may be comprised of a lamination of CoFe and Cu layers as in [CoFe/Cu]2/CoFe.

    摘要翻译： 公开了一种形成具有AP2 /偶联/ AP1构型的钉扎层的CPP-GMR自旋阀的方法，其中AP2部分是具有由CoZFe（100-Z）/ Fe（100-Z）/ Fe X）TaX / CoZFe（100-Z）或CoZFe（100-Z）/ FeYCo（100-Y）/ CoZFe（100-Z），其中x为3至30原子％，y为40至100原子％ 为75〜100原子％。 优选地，z为90以提供使电迁移最小化的面心立方结构。 任选地，中间层由富Fe合金如FeCr，FeV，FeW，FeZr，FeNb，FeHf或FeMo组成。 与具有常规AP2 Co50Fe50或Co75Fe25单层的自旋阀相比，EM性能显着提高。 MR比也增加，RA维持在可接受的水平。 耦合层优选为Ru，并且AP1层可以由如[CoFe / Cu] 2 / CoFe中的CoFe和Cu层的层叠构成。