公开(公告)号：US08138445B2

公开(公告)日：2012-03-20

申请号：US11694153

申请日：2007-03-30

Applicant: Naoki Matsumoto ,  Chishio Koshimizu ,  Yoshinobu Hayakawa ,  Hidetoshi Hanaoka ,  Manabu Iwata ,  Satoshi Tanaka

Inventor： Naoki Matsumoto ,  Chishio Koshimizu ,  Yoshinobu Hayakawa ,  Hidetoshi Hanaoka ,  Manabu Iwata ,  Satoshi Tanaka

IPC: B23K10/00

CPC classification number: H01J37/32165 ,  H01J37/32082

Abstract: In a plasma processing apparatus, a first electrode is attached to a grounded evacuable processing chamber via an insulating material or a space and a second electrode disposed in parallel with the first electrode spaced apart therefrom in the processing chamber, the second electrode supporting a target substrate to face the first electrode. A first radio frequency power supply unit applies a first radio frequency power of a first frequency to the second electrode, and a second radio frequency power supply unit applies a second radio frequency power of a second frequency lower than the first frequency to the second electrode. Further, a processing gas supply unit supplies a processing gas to a processing space formed by the first and the second electrode and a sidewall of the processing chamber. Moreover, an inductor electrically is connected between the first electrode and a ground potential.

Abstract translation: 在等离子体处理装置中，第一电极经由绝缘材料或空间连接到接地的可抽出处理室，并且在处理室中与与其间隔开的第一电极平行设置的第二电极，第二电极支撑目标衬底 面对第一个电极。 第一射频电源单元向第二电极施加第一频率的第一射频功率，第二射频电源单元将第二频率低于第一频率的第二射频功率施加到第二电极。 此外，处理气体供给单元将处理气体供给到由第一和第二电极以及处理室的侧壁形成的处理空间。 此外，电感器电连接在第一电极和地电位之间。

公开(公告)号：US20110211817A1

公开(公告)日：2011-09-01

申请号：US13034858

申请日：2011-02-25

Applicant: Jun Yamawaku ,  Chishio Koshimizu ,  Tatsuo Matsudo

Inventor： Jun Yamawaku ,  Chishio Koshimizu ,  Tatsuo Matsudo

IPC: F27D11/12 ,  H01L21/00

CPC classification number: H01L21/67115 ,  F27B17/0025 ,  F27D11/12

Abstract: There is provided a method for heating a part within a processing chamber of a semiconductor manufacturing apparatus having a substrate in the processing chamber and performing a process on the substrate. The heating method includes generating heating lights which is generated by a heating light source provided outside the processing chamber and has a wavelength band capable of passing through a first part in the processing chamber and being absorbed into a second part in the processing chamber made of a material different from that of the first part, and heating the second part in the processing chamber by passing the heating lights through the first part in the processing chamber and irradiating the heating lights to the second part in the processing chamber.

Abstract translation: 提供了一种用于加热在处理室中具有基板的半导体制造装置的处理室内的部件并在基板上进行处理的方法。 该加热方法包括产生由设置在处理室外部的加热光源产生的加热灯，并且具有能够通过处理室中的第一部分并被吸收到处理室中的第二部分中的波长带 与第一部分不同的材料，并且通过使加热灯通过处理室中的第一部分并且将加热灯照射到处理室中的第二部分来加热处理室中的第二部分。

公开(公告)号：US07993489B2

公开(公告)日：2011-08-09

申请号：US11393673

申请日：2006-03-31

Applicant: Naoki Matsumoto ,  Chishio Koshimizu ,  Akira Koshiishi

Inventor： Naoki Matsumoto ,  Chishio Koshimizu ,  Akira Koshiishi

IPC: C23F1/00 ,  H01L21/306 ,  C23C16/00 ,  H05B31/26

CPC classification number: H01L21/67069 ,  C23F4/00 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32532 ,  H01J2237/334

Abstract: A plasma processing apparatus includes a process container configured to accommodate a target substrate and to be vacuum-exhausted. A first electrode and a second electrode are disposed opposite each other within the process container. The first electrode includes an outer portion and an inner portion both facing the second electrode such that the outer portion surrounds the inner portion. An RF power supply is configured to apply an RF power to the outer portion of the first electrode. A DC power supply is configured to apply a DC voltage to the inner portion of the first electrode. A process gas supply unit is configured to supply a process gas into the process container, wherein plasma of the process gas is generated between the first electrode and the second electrode.

Abstract translation: 等离子体处理装置包括被配置为容纳目标基板并被抽真空的处理容器。 第一电极和第二电极在处理容器内彼此相对设置。 第一电极包括外部部分和面向第二电极的内部部分，使得外部部分围绕内部部分。 RF电源被配置为向第一电极的外部施加RF功率。 DC电源被配置为向第一电极的内部施加DC电压。 处理气体供应单元被配置为将处理气体供应到处理容器中，其中处理气体的等离子体在第一电极和第二电极之间产生。

公开(公告)号：US07951262B2

公开(公告)日：2011-05-31

申请号：US11156561

申请日：2005-06-21

Applicant: Akira Koshiishi ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa ,  Hidetoshi Hanaoka ,  Toshihiro Hayami ,  Hiroki Yamazaki ,  Manabu Sato

Inventor： Akira Koshiishi ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa ,  Hidetoshi Hanaoka ,  Toshihiro Hayami ,  Hiroki Yamazaki ,  Manabu Sato

IPC: C23F1/00 ,  H01L21/306

CPC classification number: H01J37/32091 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/3244 ,  H01J37/32697 ,  H01J37/32706 ,  H01J2237/334 ,  H01L21/3065

Abstract: An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching.

Abstract translation: 一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。 被配置为施加具有相对较高频率的第一RF功率的第一RF电源和被配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。 可变直流电源连接到上电极。 将工艺气体供应到处理室中以产生处理气体的等离子体，以进行等离子体蚀刻。

公开(公告)号：US20090237496A1

公开(公告)日：2009-09-24

申请号：US12407476

申请日：2009-03-19

Applicant: Yohei YAMAZAWA ,  Chishio Koshimizu

Inventor： Yohei YAMAZAWA ,  Chishio Koshimizu

IPC: H04N7/18

CPC classification number: G01N21/68 ,  G01N2021/1765 ,  H01J37/32935 ,  H01J37/32972 ,  H01L21/67253

Abstract: An observation substrate for observation capable of observing an overall plasma emission distribution. An observation wafer for observing a plasma emission state in a processing space of a process module of a substrate processing system includes a base and a plurality of image pickup units disposed on a surface of the base facing the processing space. Each of the image pickup units includes a lens and an image pickup device having a memory for storing a picked-up image.

Abstract translation: 一种用于观察等离子体发射分布的观察用基板。 用于观察基板处理系统的处理模块的处理空间中的等离子体发射状态的观察晶片包括设置在面向处理空间的基板的表面上的基座和多个图像拾取单元。 每个图像拾取单元包括透镜和具有用于存储拾取图像的存储器的图像拾取装置。

公开(公告)号：US07582182B2

公开(公告)日：2009-09-01

申请号：US11742688

申请日：2007-05-01

Applicant: Naoki Matsumoto ,  Yohei Yamazawa ,  Chishio Koshimizu ,  Tatsuo Matsudo ,  Sumie Segawa

Inventor： Naoki Matsumoto ,  Yohei Yamazawa ,  Chishio Koshimizu ,  Tatsuo Matsudo ,  Sumie Segawa

IPC: C23F1/00

CPC classification number: G01N21/68 ,  H01J37/32174 ,  H01J37/32935 ,  H01J37/32972 ,  H01L21/31116

Abstract: An apparatus for measuring plasma electron density precisely measures electron density in plasma even under a low electron density condition or high pressure condition. This plasma electron density measuring apparatus includes a vector network analyzer in a measuring unit, which measures a complex reflection coefficient and determines a frequency characteristic of an imaginary part of the coefficient. A resonance frequency at a point where the imaginary part of the complex reflection coefficient is zero-crossed is read and the electron density is calculated based on the resonance frequency by a measurement control unit.

公开(公告)号：US20090120582A1

公开(公告)日：2009-05-14

申请号：US12266800

申请日：2008-11-07

Applicant: Chishio Koshimizu ,  Kazuki Denpoh ,  Hiromasa Mochiki

Inventor： Chishio Koshimizu ,  Kazuki Denpoh ,  Hiromasa Mochiki

IPC: H01L21/3065

CPC classification number: H01J37/3244 ,  H01J37/32449

Abstract: A shower plate of a processing gas supply unit disposed in a processing chamber of a substrate processing apparatus to supply a processing gas into a processing space in the processing chamber. The shower plate is interposed between a processing gas introduction space formed in the processing gas supply unit for introduction of the processing gas and the processing space. The shower plate includes processing gas supply passageways which allow the processing gas introduction space to communicate with the processing space. The processing gas supply passageways include gas holes formed toward the processing gas introduction space and gas grooves formed toward the processing space, the gas holes and gas grooves communicating with each other. A total flow path cross sectional area of all the gas grooves is larger than a total flow path cross sectional area of all the gas holes.

Abstract translation: 处理气体供给单元的喷淋板，设置在基板处理装置的处理室中，以将处理气体供给到处理室中的处理空间。 喷淋板介于形成在处理气体供给单元中的处理气体导入空间，用于引入处理气体和处理空间。 淋浴板包括处理气体供给通道，其允许处理气体引入空间与处理空间通信。 处理气体供给通路包括朝向处理气体导入空间形成的气孔和朝向处理空间形成的气体槽，气体孔和气体槽相互连通。 所有气体槽的总流路横截面面积大于所有气孔的总流路横截面面积。

公开(公告)号：US07527016B2

公开(公告)日：2009-05-05

申请号：US10615915

申请日：2003-07-10

Applicant: Yohei Yamazawa ,  Manabu Iwata ,  Chishio Koshimizu ,  Fumihiko Higuchi ,  Akitaka Shimizu ,  Asao Yamashita ,  Nobuhiro Iwama ,  Tsutomu Higashiura ,  Dongsheng Zhang ,  Michiko Nakaya ,  Norikazu Murakami

Inventor： Yohei Yamazawa ,  Manabu Iwata ,  Chishio Koshimizu ,  Fumihiko Higuchi ,  Akitaka Shimizu ,  Asao Yamashita ,  Nobuhiro Iwama ,  Tsutomu Higashiura ,  Dongsheng Zhang ,  Michiko Nakaya ,  Norikazu Murakami

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H05B31/26

CPC classification number: H01J37/32174 ,  H01J37/321

Abstract: An apparatus, which performs a plasma process on a target substrate by using plasma, includes first and second electrodes in a process chamber to oppose each other. An RF field, which turns a process gas into plasma by excitation, is formed between the first and second electrodes. An RF power supply, which supplies RF power, is connected to the first or second electrode through a matching circuit. The matching circuit automatically performs input impedance matching relative to the RF power. A variable impedance setting section is connected to a predetermined member, which is electrically coupled with the plasma, through an interconnection. The impedance setting section sets a backward-direction impedance against an RF component input to the predetermined member from the plasma. A controller supplies a control signal concerning a preset value of the backward-direction impedance to the impedance setting section.

Abstract translation: 通过使用等离子体在目标衬底上执行等离子体处理的装置包括处理室中彼此相对的第一和第二电极。 在第一和第二电极之间形成通过激发将工艺气体转化成等离子体的RF场。 提供RF功率的RF电源通过匹配电路连接到第一或第二电极。 匹配电路自动执行相对于RF功率的输入阻抗匹配。 可变阻抗设定部分通过互连连接到与等离子体电耦合的预定部件。 阻抗设定部分针对从等离子体输入到预定部件的RF分量设置反向阻抗。 控制器将关于反向阻抗的预设值的控制信号提供给阻抗设定部。

公开(公告)号：US20090026170A1

公开(公告)日：2009-01-29

申请号：US12046094

申请日：2008-03-11

Applicant: Satoshi TANAKA ,  Chishio Koshimizu ,  Manabu Iwata ,  Naoki Matsumoto ,  Toru Ito

Inventor： Satoshi TANAKA ,  Chishio Koshimizu ,  Manabu Iwata ,  Naoki Matsumoto ,  Toru Ito

IPC: G01R31/00 ,  C23F1/08

CPC classification number: H01J37/32706 ,  H01J37/32091

Abstract: A plasma processing apparatus can prevent a sheath from becoming distorted, simplify a configuration of the apparatus, and prevent particles from attaching to a substrate. The plasma processing apparatus performs plasma processing on the substrate. A housing chamber houses the substrate. A mounting stage is disposed within the housing chamber and mounted with the substrate. An annular member is disposed in the mounting stage. A power supply unit supplies high-frequency power to the mounting stage. An observation unit optically observes the distribution of the plasma. A voltage applying unit applies a DC voltage to the annular member. A control unit sets the value of the DC voltage to be applied based on the observed plasma distribution.

Abstract translation: 等离子体处理装置可以防止护套变形，简化装置的构造，并防止颗粒附着于基板。 等离子体处理装置对基板进行等离子体处理。 容纳室容纳衬底。 安装台设置在壳体室内并与基板一起安装。 环形构件设置在安装台中。 电源单元为安装级提供高频电源。 观察单元光学地观察等离子体的分布。 电压施加单元向环形构件施加直流电压。 控制单元基于观察到的等离子体分布来设定要施加的DC电压的值。

公开(公告)号：US07462293B2

公开(公告)日：2008-12-09

申请号：US11742643

申请日：2007-05-01

Applicant: Naoki Matsumoto ,  Yohei Yamazawa ,  Chishio Koshimizu

Inventor： Naoki Matsumoto ,  Yohei Yamazawa ,  Chishio Koshimizu

IPC: G01R31/00

CPC classification number: G01N21/68 ,  H01J37/32174 ,  H01J37/32935 ,  H01J37/32972 ,  H01L21/31116

Abstract: An apparatus for measuring plasma electron density precisely measures electron density in plasma even under a low electron density condition or high pressure condition. This plasma electron density measuring apparatus includes a vector network analyzer in a measuring unit, which measures a complex reflection coefficient and determines a frequency characteristic of an imaginary part of the coefficient. A resonance frequency at a point where the imaginary part of the complex reflection coefficient is zero-crossed is read and the electron density is calculated based on the resonance frequency by a measurement control unit.

Abstract translation: 用于测量等离子体电子密度的装置即使在低电子密度条件或高压条件下也能精确地测量等离子体中的电子密度。 该等离子体电子密度测量装置包括测量单元中的矢量网络分析仪，其测量复数反射系数并确定系数的虚部的频率特性。 读取复数反射系数的虚部为零交叉点的共振频率，并且通过测量控制单元基于谐振频率计算电子密度。