公开(公告)号：US06935014B2

公开(公告)日：2005-08-30

申请号：US10097625

申请日：2002-03-15

申请人： Kazuya Maekawa ,  Akio Iijima ,  Junichi Sato ,  Hiroyuki Miyamoto

发明人： Kazuya Maekawa ,  Akio Iijima ,  Junichi Sato ,  Hiroyuki Miyamoto

IPC分类号： G03F7/26 ,  C23C14/34 ,  G03F7/40 ,  G03F7/42 ,  G11B5/31 ,  H01F41/30 ,  G11B5/127 ,  H04R31/00

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3163 ,  H01F41/302 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49041 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： An electrode film and a protective electrode film are formed on an insulating film and a first magnetic film in turn. Then, a first photoresist layer, an intermediate layer and a second photoresist layer are formed on the protective electrode film in turn. The intermediate layer is formed by a sputtering method so that the surface temperature of the intermediate layer is set to 140° C. or below. Then, the first photoresist layer is exposed and developed, to fabricate a photoresist pattern. Then, the intermediate layer is partially etched and removed via the photoresist pattern as a mask by a reactive ion etching method using a chlorine-based gas.

摘要翻译： 依次在绝缘膜和第一磁性膜上形成电极膜和保护电极膜。 然后依次在保护电极膜上形成第一光致抗蚀剂层，中间层和第二光致抗蚀剂层。 通过溅射法形成中间层，使得中间层的表面温度设定为140℃以下。 然后，第一光致抗蚀剂层被曝光和显影，以制造光致抗蚀剂图案。 然后，通过使用氯系气体的反应离子蚀刻方法，通过作为掩模的光致抗蚀剂图案部分地蚀刻和去除中间层。

公开(公告)号：US06804822B2

公开(公告)日：2004-10-12

申请号：US10132775

申请日：2002-04-25

申请人： Junichi Sato ,  Kosuke Watanabe ,  Kunio Kojima ,  Hiroyuki Katayama ,  Hiroshi Fuji ,  Kenji Ohta

发明人： Junichi Sato ,  Kosuke Watanabe ,  Kunio Kojima ,  Hiroyuki Katayama ,  Hiroshi Fuji ,  Kenji Ohta

IPC分类号： G11B724

CPC分类号： G11B5/7325 ,  G11B5/012 ,  G11B5/74 ,  G11B5/82 ,  G11B11/10508 ,  G11B11/10584 ,  G11B11/10591 ,  G11B2005/0005 ,  G11B2005/0021

摘要： A magnetic recording medium, which includes a substrate and an amorphous magnetic layer, made of an amorphous magnetic material, for magnetic recording of data, is provided with an underlayer between the substrate and the amorphous magnetic layer, the underlayer being made of amorphous metal element, and having a mean thickness of 10 nm or less. In this manner, movement of magnetic domain walls of the amorphous magnetic layer is effectively limited by minute irregularities on a surface of the underlayer. This realizes a stable formation of a minute recording mark. This realizes recording having a sufficient signal quality, even when the high-density recording is performed by forming such a minute recording mark that a shortest length of the recording mark is less than 100 nm. Moreover, this allows the magnetic recording medium to have a simplified layer structure. Further, a magnetic recording apparatus magnetically records data onto a magnetic recording medium having the above arrangement, by heating a portion of the magnetic layer by radiating a light beam locally, and by applying a magnetic field on at least part of the portion of the magnetic layer on which the light beam is radiated. This provides a magnetic recording apparatus for high-density recording.

摘要翻译： 包括由非晶磁性材料制成的用于磁记录数据的基板和非晶磁性层的磁记录介质在基板和非晶磁性层之间设置有底层，底层由非晶金属元件 平均厚度为10nm以下。 以这种方式，非晶磁性层的磁畴壁的运动被有效地限制在底层表面上的微小凹凸。 这实现了一个稳定的分钟记录标记的形成。 这实现了具有足够的信号质量的记录，即使当通过形成记录标记的最短长度小于100nm的这种微小记录标记来执行高密度记录时。 此外，这允许磁记录介质具有简化的层结构。 此外，磁记录装置将数据磁记录到具有上述结构的磁记录介质上，通过局部辐射光束加热磁性层的一部分，并且通过在磁体的至少一部分上施加磁场 光束辐射的层。 这提供了用于高密度记录的磁记录装置。

公开(公告)号：US06735059B2

公开(公告)日：2004-05-11

申请号：US10119155

申请日：2002-04-10

申请人： Junichi Sato

发明人： Junichi Sato

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3909 ,  H01L43/08

摘要： A magnetoresistive effective type element, comprising: a magnetoresistive effective film; a first shielding film of which one main surface is adjacent to one main surface of said magnetoresistive effective film; a second shielding film of which one main surface is adjacent to the other main surface of said magnetoresistive effective film; and a third shielding film of which one main surface is adjacent to the other main surface of said first shielding film or said second shielding film opposite to said magnetoresistive effective film, wherein said first shielding film and said second shielding film function as current-supplying layers to flow current perpendicular to and through said magnetoresistive effective film, and wherein said first shielding film and said second shielding film are made of at least one selected from the group consisting of NiFe, CoZrTa, FeN, FeAlSi, NiFe alloy, Co-based amorphous material and Fe-based soft magnetic material.

摘要翻译： 一种磁阻有效型元件，包括：磁阻有效膜; 第一屏蔽膜，其一个主表面与所述磁阻有效膜的一个主表面相邻; 一个主表面与所述磁阻有效膜的另一个主表面相邻的第二屏蔽膜; 以及第三屏蔽膜，其一个主表面与所述第一屏蔽膜或所述第二屏蔽膜的与所述磁阻有效膜相对的另一个主表面相邻，其中所述第一屏蔽膜和所述第二屏蔽膜用作电流供应层 流过垂直于并通过所述磁阻有效膜的电流，其中所述第一屏蔽膜和所述第二屏蔽膜由选自NiFe，CoZrTa，FeN，FeAlSi，NiFe合金，Co基非晶体中的至少一种制成 材料和铁基软磁材料。

公开(公告)号：US06654203B2

公开(公告)日：2003-11-25

申请号：US09930286

申请日：2001-08-16

申请人： Seiji Yari ,  Atsushi Yamaguchi ,  Tetsuya Mino ,  Kazuo Ishizaki ,  Jun-ichi Hokushin ,  Junichi Sato ,  Kazuya Maekawa

发明人： Seiji Yari ,  Atsushi Yamaguchi ,  Tetsuya Mino ,  Kazuo Ishizaki ,  Jun-ichi Hokushin ,  Junichi Sato ,  Kazuya Maekawa

IPC分类号： G11B5147

CPC分类号： G11B5/3163 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3146 ,  G11B5/3967

摘要： In a method of forming a track width defining layer including a magnetic pole portion, a base film is initially formed on a write gap layer. The base film includes a first layer made of a magnetic material having a saturation magnetic flux density of 1.8 T or more, and a second layer formed on the first layer and made of a magnetic material. The magnetic material forming the second layer is a material containing Fe or Ni as a main component and without containing Co. Then, a frame having an opening of a shape matching with the track width defining layer is formed on the second layer. Subsequently, the track width defining layer is formed within the opening by electroplating, using the base film as an electrode.

公开(公告)号：US06482743B1

公开(公告)日：2002-11-19

申请号：US09660796

申请日：2000-09-13

申请人： Junichi Sato

发明人： Junichi Sato

IPC分类号： H01L21302

CPC分类号： H01L21/3212 ,  H01L21/7684

摘要： For the purpose of providing a semiconductor and its manufacturing that can attain local smoothing by removing local defective surface morphology while attaining global surface smoothing, a substrate surface is smoothed by conducting chemical mechanical polishing in a plurality of separate steps using different types of slurry which are different in degree of dispersion of abrasive particles. For example, chemical mechanical polishing is first conducted by using non-suspension-type slurry, and chemical mechanical polishing is next conducted by using suspension-type slurry. By polishing a Cu film, for example, by using this chemical mechanical polishing, a plug is made in a via hole.

摘要翻译： 为了提供半导体及其制造，其可以通过在获得全局表面平滑的同时去除局部缺陷表面形态来获得局部平滑，通过使用不同类型的浆料进行多个分离步骤的化学机械抛光来平滑基板表面， 研磨颗粒分散度不同。 例如，首先通过使用非悬浮型浆料进行化学机械抛光，然后通过使用悬浮型浆料进行化学机械抛光。 通过例如通过使用这种化学机械抛光来抛光Cu膜，在通孔中形成插头。

公开(公告)号：US06426475B2

公开(公告)日：2002-07-30

申请号：US09880035

申请日：2001-06-14

申请人： Kenji Watanabe ,  Kumi Uchiyama ,  Kiyoshi Kagenaga ,  Junichi Sato ,  Eiji Kaneko ,  Mitsutaka Honma ,  Hiromichi Somei

发明人： Kenji Watanabe ,  Kumi Uchiyama ,  Kiyoshi Kagenaga ,  Junichi Sato ,  Eiji Kaneko ,  Mitsutaka Honma ,  Hiromichi Somei

IPC分类号： H01H3375

CPC分类号： H01H33/6644 ,  H01H1/0206 ,  H01H33/185 ,  H01H33/6645

摘要： The flux density Bct is applied at the center area of the electrode. The flux density Bct is adjusted within the range A of 0.75 to 0.9 times greater than the axial flux density Bcr which gives the lowest arc voltage between the electrodes against each breaking current. The axial flux density monotonously increases from the center to the circumferential area of the electrode. Here, the radial position where the axial flux density Bcr which gives the lowest arc voltage Vmin is adjusted within the region B of 20% to 40% of the radius of the electrode. The axial flux density is made monotonously increase in an outer area from the region B and give the maximum value Bp in a circumferential area equal to or beyond 70% of the radius of the electrode. The maximum value Bp is adjusted within the range C of 1.4 to 2.4 times greater than the flux density Bct given at the electrode center.

摘要翻译： 磁通密度Bct被施加在电极的中心区域。 磁通密度Bct在比轴向通量密度Bcr的0.75至0.9倍的范围A内调节，这相对于每个断开电流给出电极之间的最低电弧电压。 轴向通量密度从电极的中心到圆周面积单调增加。 这里，在电极半径的20％〜40％的区域B内调整给出最低电弧电压Vmin的轴向通量密度Bcr的径向位置。 在区域B的外部区域的轴向通量密度单调增加，并且在等于或超过电极半径的70％的圆周区域中给出最大值Bp。 最大值Bp在比电极中心给出的通量密度Bct大1.4至2.4倍的范围C内调节。

公开(公告)号：US5906949A

公开(公告)日：1999-05-25

申请号：US739101

申请日：1996-10-25

申请人： Junichi Sato

发明人： Junichi Sato

IPC分类号： H01L21/304 ,  B24B37/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/00 ,  B24B1/00

CPC分类号： C09G1/02 ,  C09K3/1463

摘要： A chemical-mechanical polishing process for planarizing at least one or more of thin films formed on a substrate, wherein the chemical-mechanical polishing is performed using a slurry containing abrasive particles mainly made of sialon or boehmite. This process is advantageous in improvement of a polishing rate without degradation in planarity of the processed surface and in level of metal impurities.

摘要翻译： 一种用于平坦化形成在基底上的至少一种或多种薄膜的化学机械抛光方法，其中使用包含主要由赛隆或勃姆石制成的磨料颗粒的浆料进行化学机械抛光。 该方法有利于提高抛光速率，而不会降低加工表面的平面度和金属杂质的水平。

公开(公告)号：US5795825A

公开(公告)日：1998-08-18

申请号：US627511

申请日：1996-04-08

申请人： Yukiyasu Sugano ,  Junichi Sato

发明人： Yukiyasu Sugano ,  Junichi Sato

IPC分类号： H01L21/28 ,  H01L21/311 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L21/465

CPC分类号： H01L21/311 ,  H01L21/76877

摘要： A method of forming a connection layer by filling an Al-based material wherein planarization of an entire surface of a substrate is achieved. 1 Al-based material 10 is deposited and filled in concave sections 4,8 formed in a substrate 1 under a high temperature, and then the surface of the Al-base material is polished with unwoven cloth or an etching liquid. 2 In a lithography process using an alignment mark for alignment on a substrate, an Al-based material is deposited and filled in a concave section in a portion other than the alignment mark for alignment under a high temperature, and then the surface of the Al-based material is polished. 3 In a process to deposit an Al-based material on a substrate and then planarize the surface of the Al-based material by polishing, an antireflection film is deposited on the Al-based material after the Al-based material is planarized.

摘要翻译： 通过填充Al基材料形成连接层的方法，其中实现了基板的整个表面的平坦化。 + E，crc 1 + EE Al基材料10沉积并填充在高温下形成在基板1中的凹部4,8中，然后用无纺布或蚀刻来研磨Al基材料的表面 液体。 + E，crc 2 + EE在使用对准标记在基板上进行取向的光刻工艺中，Al基材料沉积并填充在除对准标记之外的部分中的凹部中，以在高温下进行取向，并且 然后抛光Al基材料的表面。 + E，crc 3 + EE在将Al基材料沉积在基板上然后通过抛光使Al基材料的表面平坦化的方法中，在Al基材料上沉积抗反射膜 材料平面化。

公开(公告)号：US5628954A

公开(公告)日：1997-05-13

申请号：US457494

申请日：1995-06-01

申请人： Junichi Sato

发明人： Junichi Sato

IPC分类号： G01N21/88 ,  G01N21/94 ,  G01N21/956 ,  H01L21/304 ,  H01L21/306 ,  H01L21/66

CPC分类号： H01L21/02043 ,  G01N21/94 ,  H01L21/02046 ,  Y10S134/902

摘要： A process for detecting fine particles includes the steps of forming a sublimable thin film on an essential surface of a wafer on which fine particles are present, irradiating laser beam at the surface of the wafer, receiving a reflected beam from the surface which is scattered by the presence of the fine particles, and detecting the particles from the received scattered beam. The process may further include the step of accomplishing an etchback against the sublimable film to partially retain the sublimable film adjacent the surface of the fine particles. The film can be prepared from one or a mixture of gas including free sulfur generatable gas under discharge-dissociation conditions. Sulfur compounds or polythiazyl are preferable. Alternatively, the film can be made of a condensed film of organic solvent vapor. The sublimable film is sublimed by heating after the step of detecting the fine particles.

摘要翻译： 检测微粒的方法包括以下步骤：在存在微粒的晶片的主表面上形成升华性薄膜，在晶片的表面照射激光束，从表面散射的反射光束 微粒的存在，并从接收的散射光束中检测出粒子。 该方法还可以包括对可升华膜进行回蚀以部分地保持邻近细颗粒表面的可升华膜的步骤。 该膜可以在放电解离条件下由一种或其中包括游离硫可生成气体的气体混合物制备。 硫化合物或聚噻唑是优选的。 或者，膜可以由有机溶剂蒸气的冷凝膜制成。 通过在检测细颗粒的步骤之后通过加热使升华膜升华。

公开(公告)号：US5496506A

公开(公告)日：1996-03-05

申请号：US121366

申请日：1993-09-15

申请人： Junichi Sato

发明人： Junichi Sato

IPC分类号： G01N21/88 ,  G01N21/94 ,  G01N21/956 ,  H01L21/304 ,  H01L21/306 ,  H01L21/66

CPC分类号： H01L21/02043 ,  G01N21/94 ,  H01L21/02046 ,  Y10S134/902

摘要： A process for detecting fine particles includes the steps of forming a sublimable thin film on an essential surface of a wafer on which fine particles are present, irradiating laser beam at the surface of the wafer, receiving a reflected beam from the surface which is scattered by the presence of the fine particles, and detecting the particles from the received scattered beam. The process may further include the step of accomplishing an etchback against the sublimable film to partially retain the sublimable film adjacent the surface of the fine particles. The film can be prepared from one or a mixture of gases including free sulfur generatable gas under discharge-dissociation conditions. Sulfur compounds or polythiazyl are preferable. Alternatively, the film can be made of a condensed film of organic solvent vapor. The sublimable film is sublimed by heating after the step of detecting the fine particles.

摘要翻译： 检测微粒的方法包括以下步骤：在存在微粒的晶片的主表面上形成升华性薄膜，在晶片的表面照射激光束，从表面散射的反射光束 微粒的存在，并从接收的散射光束中检测出粒子。 该方法还可以包括对可升华膜进行回蚀以部分地保持邻近细颗粒表面的可升华膜的步骤。 该膜可以在放电解离条件下由一种或多种气体（包括游离的可硫化气体）制备。 硫化合物或聚噻唑是优选的。 或者，膜可以由有机溶剂蒸气的冷凝膜制成。 通过在检测细颗粒的步骤之后通过加热使升华膜升华。