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    Backside contact solar cell with formed polysilicon doped regions
    52.
    发明授权
    Backside contact solar cell with formed polysilicon doped regions 有权
    背面接触太阳能电池，形成多晶硅掺杂区域

    公开(公告)号：US08647911B2

    公开(公告)日：2014-02-11

    申请号：US13547405

    申请日：2012-07-12

    Applicant: David D. Smith

    Inventor： David D. Smith

    IPC: H01L31/18

    CPC classification number: H01L31/182 ,  H01L31/02363 ,  H01L31/0682 ,  H01L31/1872 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

    Abstract: A solar cell includes abutting P-type and N-type doped regions in a contiguous portion of a polysilicon layer. The polysilicon layer may be formed on a thin dielectric layer, which is formed on a backside of a solar cell substrate (e.g., silicon wafer). The polysilicon layer has a relatively large average grain size to reduce or eliminate recombination in a space charge region between the P-type and N-type doped regions, thereby increasing efficiency.

    Abstract translation: 太阳能电池包括在多晶硅层的邻接部分中邻接的P型和N型掺杂区域。 多晶硅层可以形成在形成在太阳能电池基板（例如，硅晶片）的背面上的薄介电层上。 多晶硅层具有相对大的平均晶粒尺寸以减少或消除P型和N型掺杂区域之间的空间电荷区域中的复合，从而提高效率。

    Backside contact solar cell with formed polysilicon doped regions
    55.
    发明授权
    Backside contact solar cell with formed polysilicon doped regions 有权
    背面接触太阳能电池，形成多晶硅掺杂区域

    公开(公告)号：US08242354B2

    公开(公告)日：2012-08-14

    申请号：US12626483

    申请日：2009-11-25

    Applicant: David D. Smith

    Inventor： David D. Smith

    IPC: H01L31/00

    CPC classification number: H01L31/182 ,  H01L31/02363 ,  H01L31/0682 ,  H01L31/1872 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

    Abstract: A solar cell includes abutting P-type and N-type doped regions in a contiguous portion of a polysilicon layer. The polysilicon layer may be formed on a thin dielectric layer, which is formed on a backside of a solar cell substrate (e.g., silicon wafer). The polysilicon layer has a relatively large average grain size to reduce or eliminate recombination in a space charge region between the P-type and N-type doped regions, thereby increasing efficiency.

    Abstract translation: 太阳能电池包括在多晶硅层的邻接部分中邻接的P型和N型掺杂区域。 多晶硅层可以形成在形成在太阳能电池基板（例如，硅晶片）的背面上的薄介电层上。 多晶硅层具有相对大的平均晶粒尺寸以减少或消除P型和N型掺杂区域之间的空间电荷区域中的复合，从而提高效率。

    Bypass diode for a solar cell
    56.
    发明授权
    Bypass diode for a solar cell 有权
    用于太阳能电池的旁路二极管

    公开(公告)号：US08134217B2

    公开(公告)日：2012-03-13

    申请号：US12967976

    申请日：2010-12-14

    Applicant: Seung Bum Rim ,  Taeseok Kim ,  David D. Smith ,  Peter J. Cousins

    Inventor： Seung Bum Rim ,  Taeseok Kim ,  David D. Smith ,  Peter J. Cousins

    IPC: H01L21/02

    CPC classification number: H01L29/861 ,  H01L31/022441 ,  H01L31/0443 ,  H01L31/068 ,  H01L31/0682 ,  Y02E10/547

    Abstract: Bypass diodes for solar cells are described. In one embodiment, a bypass diode for a solar cell includes a substrate of the solar cell. A first conductive region is disposed above the substrate, the first conductive region of a first conductivity type. A second conductive region is disposed on the first conductive region, the second conductive region of a second conductivity type opposite the first conductivity type.

    Abstract translation: 描述了用于太阳能电池的旁路二极管。 在一个实施例中，用于太阳能电池的旁路二极管包括太阳能电池的衬底。 第一导电区域设置在衬底上方，第一导电类型的第一导电区域。 第二导电区域设置在第一导电区域上，第二导电区域具有与第一导电类型相反的第二导电类型。

    Etching of solar cell materials
    59.
    发明授权
    Etching of solar cell materials 有权
    蚀刻太阳能电池材料

    公开(公告)号：US07455787B2

    公开(公告)日：2008-11-25

    申请号：US10632747

    申请日：2003-08-01

    Applicant: Douglas H. Rose ,  Pongsthorn Uralwong ,  David D. Smith

    Inventor： Douglas H. Rose ,  Pongsthorn Uralwong ,  David D. Smith

    IPC: C23F1/00

    CPC classification number: H01L31/022425 ,  H01L31/02008 ,  H01L31/18

    Abstract: A solar cell is fabricated by etching one or more of its layers without substantially etching another layer of the solar cell. In one embodiment, a copper layer in the solar cell is etched without substantially etching a topmost metallic layer comprising tin. For example, an etchant comprising sulfuric acid and hydrogen peroxide may be employed to etch the copper layer selective to the tin layer. A particular example of the aforementioned etchant is a Co-Bra Etcho® etchant modified to comprise about 1% by volume of sulfuric acid, about 4% by volume of phosphoric acid, and about 2% by volume of stabilized hydrogen peroxide. In one embodiment, an aluminum layer in the solar cell is etched without substantially etching the tin layer. For example, an etchant comprising potassium hydroxide may be employed to etch the aluminum layer without substantially etching the tin layer.

    Abstract translation: 通过蚀刻其一个或多个层而不基本上蚀刻太阳能电池的另一层来制造太阳能电池。 在一个实施例中，蚀刻太阳能电池中的铜层而基本上不蚀刻包含锡的最顶层金属层。 例如，可以使用包含硫酸和过氧化氢的蚀刻剂来蚀刻对锡层有选择性的铜层。 上述蚀刻剂的一个具体实例是改性为包含约1体积％的硫酸，约4体积％的磷酸和约2体积％的稳定的过氧化氢的Co-BraEtcho蚀刻剂。 在一个实施例中，蚀刻太阳能电池中的铝层而基本上不蚀刻锡层。 例如，可以使用包含氢氧化钾的蚀刻剂来蚀刻铝层而基本上不蚀刻锡层。

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