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61 条记录 (耗时 0.04 秒)

    Resistance-change memory
    52.
    发明授权
    Resistance-change memory 有权
    电阻变化记忆

    公开(公告)号：US08421051B2

    公开(公告)日：2013-04-16

    申请号：US12844408

    申请日：2010-07-27

    申请人： Mitsuru Sato ,  Kohichi Kubo ,  Chikayoshi Kamata ,  Noriko Bota

    发明人： Mitsuru Sato ,  Kohichi Kubo ,  Chikayoshi Kamata ,  Noriko Bota

    IPC分类号： H01L47/00

    CPC分类号： H01L45/12 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1675

    摘要： According to one embodiment, a resistance-change memory includes a variable resistance element having a laminated structure in which a first electrode, a resistance-change film and a second electrode are laminated, and set to a low-resistance state and a high-resistance state according to stored data, an insulating film provided on a side surface of the variable resistance element, and a fixed resistance element provided on a side surface of the insulating film, and includes a conductive film, the fixed resistance element being connected in parallel with the variable resistance element.

    摘要翻译： 根据一个实施例，电阻变化存储器包括具有叠层结构的可变电阻元件，其中层压第一电极，电阻变化膜和第二电极，并且设置为低电阻状态和高电阻 根据存储数据的状态，设置在可变电阻元件的侧表面上的绝缘膜和设置在绝缘膜的侧表面上的固定电阻元件，并且包括导电膜，该固定电阻元件与 可变电阻元件。

    INFORMATION RECORDING/REPRODUCING DEVICE
    55.
    发明申请
    INFORMATION RECORDING/REPRODUCING DEVICE 有权
    信息记录/再现设备

    公开(公告)号：US20110216576A1

    公开(公告)日：2011-09-08

    申请号：US13044384

    申请日：2011-03-09

    申请人： Shinya Aoki ,  Kohichi Kubo ,  Takayuki Tsukamoto ,  Takahiro Hirai ,  Chikayoshi Kamata ,  Tsukasa Nakai

    发明人： Shinya Aoki ,  Kohichi Kubo ,  Takayuki Tsukamoto ,  Takahiro Hirai ,  Chikayoshi Kamata ,  Tsukasa Nakai

    IPC分类号： G11C11/00 ,  H01L45/00

    CPC分类号： H01L45/1233 ,  G11B9/04 ,  G11C13/0011 ,  H01L27/101 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/146

    摘要： According to one embodiment, an information recording/reproducing device includes a recording layer and a driver section. The recording layer has a first layer including a first compound. The first compound includes a mixed crystal of a first oxide containing a first metallic element and a second oxide. The second oxide has a crystal structure being same as the first oxide and contains a second metallic element different from the first metallic element. The driver section is configured to produce state change in the recording layer to record information by at least one of application of voltage to the recording layer and passage of current to the recording layer. Composition ratio of an element having a smaller ionic radius of the first and second metallic elements is not less than percolation threshold of a lattice formed of ions of the first and second metallic elements based on the crystal structure.

    摘要翻译： 根据一个实施例，信息记录/再现装置包括记录层和驱动器部分。 记录层具有包含第一化合物的第一层。 第一化合物包括含有第一金属元素和第二氧化物的第一氧化物的混合晶体。 第二氧化物具有与第一氧化物相同的晶体结构，并且含有与第一金属元素不同的第二金属元素。 驱动器部分被配置为在记录层中产生状态变化，以通过施加电压至记录层和将电流流向记录层中的至少一个来记录信息。 基于晶体结构，第一和第二金属元素离子半径较小的元素的组成比不小于由第一和第二金属元素的离子形成的晶格的渗透阈值。

    INFORMATION RECORDING/REPRODUCING DEVICE
    59.
    发明申请
    INFORMATION RECORDING/REPRODUCING DEVICE 审中-公开
    信息记录/再现设备

    公开(公告)号：US20100074001A1

    公开(公告)日：2010-03-25

    申请号：US12563703

    申请日：2009-09-21

    申请人： Kohichi Kubo ,  Takayuki Tsukamoto ,  Shinya Aoki ,  Takahiro Hirai ,  Chikayoshi Kamata ,  Toshiro Hiraoka

    发明人： Kohichi Kubo ,  Takayuki Tsukamoto ,  Shinya Aoki ,  Takahiro Hirai ,  Chikayoshi Kamata ,  Toshiro Hiraoka

    IPC分类号： G11C11/56 ,  H01L45/00

    CPC分类号： G11B9/149 ,  B82Y10/00 ,  G11B9/14

    摘要： The information recording/reproducing device includes a stacked structure which is comprised of an electrode layer and a recording layer, a buffer layer which contacts with the recording layer and a recording circuit which records data to the recording layer by generating a phase change in the recording layer. The recording layer is comprised of a complex compound having two cations, and one of the cations is a transition element having “d” orbit where electrons are incompletely filled. The recording layer is comprised of CuxAyXz (0.1≦x≦1.1, 0.9≦y≦1.1, 1.8≦z≦2.2), and includes a first chemical compound having a delafossite structure. The buffer layer is comprised of one of M3N4, M3N5, MN2, M4O7, MO2 and M2O5.

    摘要翻译： 信息记录/再现装置包括由电极层和记录层组成的堆叠结构，与记录层接触的缓冲层和通过在记录中产生相变而将数据记录到记录层的记录电路 层。 记录层由具有两个阳离子的络合物组成，其中一个阳离子是具有“d”轨道的过渡元素，其中电子未完全填充。 记录层由CuxAyXz（0.1＆nlE; x＆nlE; 1.1,0.9＆nlE; y＆nlE; 1.1,1.8＆nlE; z＆nlE; 2.2）组成，并且包括具有delafossite结构的第一化合物。 缓冲层由M3N4，M3N5，MN2，M4O7，MO2和M2O5中的一种构成。