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公开(公告)号:US20110026294A1
公开(公告)日:2011-02-03
申请号:US12886040
申请日:2010-09-20
申请人: Takayuki Tsukamoto , Takeshi Yamaguchi , Chikayoshi Kamata , Tsukasa Nakai , Takahiro Hirai , Shinya Aoki , Kohichi Kubo
发明人: Takayuki Tsukamoto , Takeshi Yamaguchi , Chikayoshi Kamata , Tsukasa Nakai , Takahiro Hirai , Shinya Aoki , Kohichi Kubo
CPC分类号: G11B9/04 , B82Y10/00 , G11B9/149 , G11B11/002 , G11B11/08 , G11C11/5678 , G11C11/5685 , G11C13/0004 , G11C13/0007 , G11C13/003 , G11C16/0483 , G11C2211/565 , G11C2213/32 , G11C2213/56 , G11C2213/71 , G11C2213/72 , G11C2213/75 , G11C2213/78 , G11C2213/79 , H01L27/101 , H01L27/2409 , H01L27/2481 , H01L45/06 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/144 , H01L45/147 , H01L45/16 , H01L45/1675
摘要: According to one embodiment, an information recording and reproducing device includes a first layer, a second layer and a recording layer. The recording layer is provided between the first and second layers and is capable of reversibly transitioning between a first state and a second state with a resistance higher than in the first state. One of the first and second layers includes a resistivity distribution layer perpendicular to a stacking direction of the first and second layers, and the recording layer. The resistivity distribution layer includes a low and a high resistivity portion. Resistivity of the high resistivity portion is higher than resistivity of the low resistivity portion. The low resistivity portion contains a transition element identical to a transition element contained in the high resistivity portion.
摘要翻译: 根据一个实施例,信息记录和再现装置包括第一层,第二层和记录层。 记录层设置在第一层和第二层之间,并且能够以比第一状态高的电阻在第一状态和第二状态之间可逆地转换。 第一层和第二层之一包括垂直于第一层和第二层的层叠方向的电阻率分布层和记录层。 电阻率分布层包括低电阻率部分和高电阻率部分。 高电阻率部分的电阻率高于低电阻率部分的电阻率。 低电阻率部分包含与包含在高电阻率部分中的过渡元素相同的过渡元件。
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公开(公告)号:US08288748B2
公开(公告)日:2012-10-16
申请号:US12889558
申请日:2010-09-24
申请人: Takayuki Tsukamoto , Chikayoshi Kamata , Takeshi Yamaguchi , Takahiro Hirai , Shinya Aoki , Kohichi Kubo
发明人: Takayuki Tsukamoto , Chikayoshi Kamata , Takeshi Yamaguchi , Takahiro Hirai , Shinya Aoki , Kohichi Kubo
IPC分类号: H01L29/02
CPC分类号: G11C13/0009 , G11C13/00 , G11C2213/72 , H01L27/2409 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/147 , H01L45/1625 , H01L45/1675
摘要: According to one embodiment, an information recording and reproducing device includes a first layer, a second layer, and a recording layer between the first and second layers, which is capable of a transition between a first state of a low resistance and a second state of a high resistance by flowing a current between the first and second layers. A peripheral portion of the recording layer has a composition different from that of a center portion of the recording layer. The center portion includes two kinds of cation elements. And the center portion is different from the peripheral portion in a ratio of the two kinds of cation elements.
摘要翻译: 根据一个实施例,信息记录和再现装置包括第一层和第二层之间的第一层,第二层和记录层,其能够在低电阻的第一状态和第二层之间的转变 通过在第一和第二层之间流动电流而产生高电阻。 记录层的周边部分具有与记录层的中心部分不同的组成。 中心部分包括两种阳离子元件。 并且中心部分以两种阳离子元素的比例与周边部分不同。
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公开(公告)号:US08089796B2
公开(公告)日:2012-01-03
申请号:US12886040
申请日:2010-09-20
申请人: Takayuki Tsukamoto , Takeshi Yamaguchi , Chikayoshi Kamata , Tsukasa Nakai , Takahiro Hirai , Shinya Aoki , Kohichi Kubo
发明人: Takayuki Tsukamoto , Takeshi Yamaguchi , Chikayoshi Kamata , Tsukasa Nakai , Takahiro Hirai , Shinya Aoki , Kohichi Kubo
IPC分类号: G11C5/06
CPC分类号: G11B9/04 , B82Y10/00 , G11B9/149 , G11B11/002 , G11B11/08 , G11C11/5678 , G11C11/5685 , G11C13/0004 , G11C13/0007 , G11C13/003 , G11C16/0483 , G11C2211/565 , G11C2213/32 , G11C2213/56 , G11C2213/71 , G11C2213/72 , G11C2213/75 , G11C2213/78 , G11C2213/79 , H01L27/101 , H01L27/2409 , H01L27/2481 , H01L45/06 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/144 , H01L45/147 , H01L45/16 , H01L45/1675
摘要: According to one embodiment, an information recording and reproducing device includes a first layer, a second layer and a recording layer. The recording layer is provided between the first and second layers and is capable of reversibly transitioning between a first state and a second state with a resistance higher than in the first state. One of the first and second layers includes a resistivity distribution layer perpendicular to a stacking direction of the first and second layers, and the recording layer. The resistivity distribution layer includes a low and a high resistivity portion. Resistivity of the high resistivity portion is higher than resistivity of the low resistivity portion. The low resistivity portion contains a transition element identical to a transition element contained in the high resistivity portion.
摘要翻译: 根据一个实施例,信息记录和再现装置包括第一层,第二层和记录层。 记录层设置在第一层和第二层之间,并且能够以比第一状态高的电阻在第一状态和第二状态之间可逆地转换。 第一层和第二层之一包括垂直于第一层和第二层的层叠方向的电阻率分布层和记录层。 电阻率分布层包括低电阻率部分和高电阻率部分。 高电阻率部分的电阻率高于低电阻率部分的电阻率。 低电阻率部分包含与包含在高电阻率部分中的过渡元素相同的过渡元件。
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4.
公开(公告)号:US08431920B2
公开(公告)日:2013-04-30
申请号:US12884880
申请日:2010-09-17
申请人: Chikayoshi Kamata , Takayuki Tsukamoto , Takeshi Yamaguchi , Tsukasa Nakai , Takahiro Hirai , Shinya Aoki , Kohichi Kubo
发明人: Chikayoshi Kamata , Takayuki Tsukamoto , Takeshi Yamaguchi , Tsukasa Nakai , Takahiro Hirai , Shinya Aoki , Kohichi Kubo
IPC分类号: H01L47/00
CPC分类号: G11B11/002 , B82Y10/00 , G11B9/04 , G11B9/149 , G11B11/08 , G11C11/5685 , G11C13/0007 , G11C13/003 , G11C16/0483 , G11C2211/565 , G11C2213/31 , G11C2213/53 , G11C2213/56 , G11C2213/71 , G11C2213/72 , G11C2213/75 , G11C2213/78 , G11C2213/79
摘要: According to one embodiment, an information recording and reproducing device includes a recording layer which includes a typical element and a transition element, and stores a state of a first electric resistivity and a state of a second electric resistivity different from the first electric resistivity by a movement of the typical element, and an electrode layer which is disposed at one end of the recording layer to apply a voltage or a current to the recording layer. The recording layer includes a first region which is in contact with the electrode layer and the electrode layer includes a second region which is in contact with the recording layer. The first and second regions are opposite to each other. And the first and second regions include the typical element, and a concentration of the typical element in the second region is higher than that in the first region.
摘要翻译: 根据一个实施例,信息记录和再现装置包括记录层,其包括典型元件和过渡元件,并且将第一电阻率的状态和与第一电阻率不同的第二电阻率的状态存储在 典型元件的移动,以及设置在记录层的一端以向记录层施加电压或电流的电极层。 记录层包括与电极层接触的第一区域,电极层包括与记录层接触的第二区域。 第一和第二区域彼此相对。 并且第一和第二区域包括典型元件,并且第二区域中的典型元件的浓度高于第一区域中的典型元件的浓度。
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公开(公告)号:US20110062407A1
公开(公告)日:2011-03-17
申请号:US12884880
申请日:2010-09-17
申请人: Chikayoshi KAMATA , Takayuki Tsukamoto , Takeshi Yamaguchi , Tsukasa Nakai , Takahiro Hirai , Shinya Aoki , Kohichi Kubo
发明人: Chikayoshi KAMATA , Takayuki Tsukamoto , Takeshi Yamaguchi , Tsukasa Nakai , Takahiro Hirai , Shinya Aoki , Kohichi Kubo
IPC分类号: H01L47/00
CPC分类号: G11B11/002 , B82Y10/00 , G11B9/04 , G11B9/149 , G11B11/08 , G11C11/5685 , G11C13/0007 , G11C13/003 , G11C16/0483 , G11C2211/565 , G11C2213/31 , G11C2213/53 , G11C2213/56 , G11C2213/71 , G11C2213/72 , G11C2213/75 , G11C2213/78 , G11C2213/79
摘要: According to one embodiment, an information recording and reproducing device includes a recording layer which includes a typical element and a transition element, and stores a state of a first electric resistivity and a state of a second electric resistivity different from the first electric resistivity by a movement of the typical element, and an electrode layer which is disposed at one end of the recording layer to apply a voltage or a current to the recording layer. The recording layer includes a first region which is in contact with the electrode layer and the electrode layer includes a second region which is in contact with the recording layer. The first and second regions are opposite to each other. And the first and second regions include the typical element, and a concentration of the typical element in the first region is higher than that in the second region.
摘要翻译: 根据一个实施例,信息记录和再现装置包括记录层,其包括典型元件和过渡元件,并且将第一电阻率的状态和与第一电阻率不同的第二电阻率的状态存储在 典型元件的移动,以及设置在记录层的一端以向记录层施加电压或电流的电极层。 记录层包括与电极层接触的第一区域,电极层包括与记录层接触的第二区域。 第一和第二区域彼此相对。 并且第一和第二区域包括典型的元件,并且第一区域中的典型元件的浓度高于第二区域中的典型元素的浓度。
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公开(公告)号:US20110062405A1
公开(公告)日:2011-03-17
申请号:US12889558
申请日:2010-09-24
申请人: Takayuki Tsukamoto , Chikayoshi Kamata , Takeshi Yamaguchi , Takahiro Hirai , Shinya Aoki , Kohichi Kubo
发明人: Takayuki Tsukamoto , Chikayoshi Kamata , Takeshi Yamaguchi , Takahiro Hirai , Shinya Aoki , Kohichi Kubo
IPC分类号: H01L45/00
CPC分类号: G11C13/0009 , G11C13/00 , G11C2213/72 , H01L27/2409 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/147 , H01L45/1625 , H01L45/1675
摘要: According to one embodiment, an information recording and reproducing device includes a first layer, a second layer, and a recording layer between the first and second layers, which is capable of a transition between a first state of a low resistance and a second state of a high resistance by flowing a current between the first and second layers. A peripheral portion of the recording layer has a composition different from that of a center portion of the recording layer. The center portion includes two kinds of cation elements. And the center portion is different from the peripheral portion in a ratio of the two kinds of cation elements.
摘要翻译: 根据一个实施例,一种信息记录和再现装置包括第一层和第二层之间的第一层,第二层和记录层,其能够在低电阻的第一状态和第二层之间的转变 通过在第一和第二层之间流动电流而产生高电阻。 记录层的周边部分具有与记录层的中心部分不同的组成。 中心部分包括两种阳离子元件。 并且中心部分以两种阳离子元素的比例与周边部分不同。
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公开(公告)号:US20110031459A1
公开(公告)日:2011-02-10
申请号:US12886254
申请日:2010-09-20
申请人: Kohichi KUBO , Chikayoshi Kamata , Takayuki Tsukamoto , Shinya Aoki , Takahiro Hirai , Tsukasa Nakai , Toshiro Hiraoka
发明人: Kohichi KUBO , Chikayoshi Kamata , Takayuki Tsukamoto , Shinya Aoki , Takahiro Hirai , Tsukasa Nakai , Toshiro Hiraoka
IPC分类号: H01L45/00
CPC分类号: B82Y10/00 , G11B9/04 , G11B9/1481 , G11B9/149 , G11C13/0007 , G11C13/003 , G11C13/0069 , G11C2013/0073 , G11C2213/51 , G11C2213/53 , G11C2213/55 , G11C2213/56 , G11C2213/71 , G11C2213/72 , G11C2213/75 , G11C2213/79 , H01L27/101
摘要: According to one embodiment, an information recording and reproducing device includes a first layer, a second layer and a recording layer. The recording layer is provided between the first layer and the second layer and being capable of reversibly changing between a first state having a first resistance and a second state having a second resistance higher than the first resistance. The recording layer includes a first compound layer and a second compound layer. The first compound layer contains a first compound. The first compound includes a first cation element and a second cation element of a type different from the first cation element. The second compound layer contains a second compound. The second compound includes a transition element having a d-orbital partially filled with electron, and the second compound includes a void site capable of storing at least one of the first cation element and the second cation element.
摘要翻译: 根据一个实施例,信息记录和再现装置包括第一层,第二层和记录层。 记录层设置在第一层和第二层之间,并且能够在具有第一电阻的第一状态和具有高于第一电阻的第二电阻的第二状态之间可逆地改变。 记录层包括第一化合物层和第二化合物层。 第一化合物层含有第一化合物。 第一化合物包括第一阳离子元件和不同于第一阳离子元件的第二阳离子元件。 第二化合物层含有第二化合物。 第二化合物包括具有部分填充有电子的d轨道的过渡元素,并且第二化合物包括能够存储第一阳离子元件和第二阳离子元素中的至少一种的空隙位置。
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公开(公告)号:US20100008209A1
公开(公告)日:2010-01-14
申请号:US12563892
申请日:2009-09-21
申请人: Takayuki Tsukamoto , Kohichi Kubo , Chikayoshi Kamata , Takahiro Hirai , Shinya Aoki , Toshiro Hiraoka
发明人: Takayuki Tsukamoto , Kohichi Kubo , Chikayoshi Kamata , Takahiro Hirai , Shinya Aoki , Toshiro Hiraoka
IPC分类号: G11B9/00
CPC分类号: H01L27/115 , B82Y10/00 , G11B9/04 , G11B9/1436 , G11B9/1481 , G11B9/149 , G11C13/00 , G11C13/0004 , G11C13/0007 , G11C2213/31 , G11C2213/32 , G11C2213/51 , G11C2213/52 , G11C2213/56 , G11C2213/71 , G11C2213/72 , G11C2213/79 , H01L27/11517 , H01L27/2409 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/126 , H01L45/147 , H01L45/1625
摘要: An information recording/reproducing device according to an aspect of the present invention includes a recording layer, and a recording circuit which records data to the recording layer by generating a phase change in the recording layer. The recording layer includes a first chemical compound having one of a Wolframite structure and a Scheelite structure.
摘要翻译: 根据本发明的一个方面的信息记录/再现装置包括记录层和记录电路,其通过在记录层中产生相变来将数据记录到记录层。 记录层包括具有Wolframite结构和Scheelite结构之一的第一化合物。
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公开(公告)号:US07995382B2
公开(公告)日:2011-08-09
申请号:US12636646
申请日:2009-12-11
申请人: Takayuki Tsukamoto , Kohichi Kubo , Chikayoshi Kamata , Takahiro Hirai , Shinya Aoki , Toshiro Hiraoka
发明人: Takayuki Tsukamoto , Kohichi Kubo , Chikayoshi Kamata , Takahiro Hirai , Shinya Aoki , Toshiro Hiraoka
IPC分类号: G11C11/00
CPC分类号: H01L45/147 , B82Y10/00 , G11B9/04 , G11B9/149 , G11C13/0004 , G11C13/0007 , G11C13/003 , G11C16/3427 , G11C2213/53 , G11C2213/75 , H01L27/101 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/126 , H01L45/1625
摘要: An information recording and reproducing apparatus, includes: a recording layer including a first layer including a first compound, the first compound being a conjugated compound including at least two types of cation elements, at least one selected from the cation elements being a transition element having a d orbit incompletely filled by electrons, a shortest distance between adjacent cation elements being not more than 0.32 nm; a voltage application unit that applies a voltage to the recording layer, produces a phase change in the recording layer, and records information; an electrode layer that applies a voltage to the recording layer; and an orientation control layer provided between the recording layer and the electrode layer to control an orientation of the recording layer.
摘要翻译: 一种信息记录和再现装置,包括:记录层,包括第一层,第一层包括第一化合物,第一化合物是包含至少两种阳离子元素的共轭化合物,选自阳离子元素中的至少一种是具有 ad轨道不完全填充电子,相邻阳离子元素之间的最短距离不大于0.32nm; 向记录层施加电压的电压施加单元,在记录层中产生相变,记录信息; 向记录层施加电压的电极层; 以及设置在记录层和电极层之间的取向控制层,以控制记录层的取向。
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公开(公告)号:US20110024713A1
公开(公告)日:2011-02-03
申请号:US12858975
申请日:2010-08-18
申请人: Chikayoshi KAMATA , Takayuki Tsukamoto , Kohichi Kubo , Shinya Aoki , Takahiro Hirai , Toshiro Hiraoka
发明人: Chikayoshi KAMATA , Takayuki Tsukamoto , Kohichi Kubo , Shinya Aoki , Takahiro Hirai , Toshiro Hiraoka
CPC分类号: H01L45/06 , G11C13/0004 , G11C2213/72 , H01L27/2409 , H01L27/2481 , H01L45/1233 , H01L45/1253 , H01L45/144 , H01L45/1625 , H01L45/1641 , H01L45/165 , H01L45/1658 , H01L45/1675 , Y10S257/92 , Y10S977/712 , Y10S977/734
摘要: According to one embodiment, a nonvolatile memory device includes a stacked body including a first layer, a second layer and a recording layer. The recording layer is provided between the first layer and the second layer. The recording layer is capable of reversibly changing between a first state and a second state having a resistance higher than a resistance in the first state by a current supplied via the first layer and the second layer. The recording layer includes a first portion and a second portion provided in a plane of a major surface of the recording layer. The second portion has a nitrogen amount higher than a nitrogen amount in the first portion.
摘要翻译: 根据一个实施例,非易失性存储器件包括包括第一层,第二层和记录层的层叠体。 记录层设置在第一层和第二层之间。 记录层能够通过经由第一层和第二层提供的电流在具有高于第一状态的电阻的电阻的第一状态和第二状态之间可逆地改变。 记录层包括设置在记录层的主表面的平面中的第一部分和第二部分。 第二部分具有比第一部分中的氮量高的氮量。
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