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公开(公告)号:US08391045B2
公开(公告)日:2013-03-05
申请号:US12563739
申请日:2009-09-21
申请人: Kohichi Kubo , Hirofumi Inoue , Mitsuru Sato , Chikayoshi Kamata , Shinya Aoki , Noriko Bota
发明人: Kohichi Kubo , Hirofumi Inoue , Mitsuru Sato , Chikayoshi Kamata , Shinya Aoki , Noriko Bota
IPC分类号: G11C11/00
CPC分类号: G11C13/0007 , B82Y10/00 , G11C11/5685 , G11C13/0069 , G11C2013/009 , G11C2213/17 , G11C2213/31 , G11C2213/32 , G11C2213/71 , G11C2213/72 , H01L27/2409 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/147
摘要: An information recording/reproducing device includes a first electrode layer, a second electrode layer, a recording layer as a variable resistance between the first and second electrode layer, and a circuit which supplies a voltage to the recording layer to change a resistance of the recording layer. Each of the first and second electrode layers is comprised of IV or III-V semiconductor doped with p-type carrier or n-type carrier.
摘要翻译: 信息记录/再现装置包括第一电极层,第二电极层,作为第一和第二电极层之间的可变电阻的记录层和向记录层提供电压以改变记录电阻的电路 层。 第一和第二电极层中的每一个由掺杂有p型载体或n型载流子的IV或III-V半导体构成。
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公开(公告)号:US20100238703A1
公开(公告)日:2010-09-23
申请号:US12563739
申请日:2009-09-21
申请人: Kohichi KUBO , Hirofumi Inoue , Mitsuru Sato , Chikayoshi Kamata , Shinya Aoki , Noriko Bota
发明人: Kohichi KUBO , Hirofumi Inoue , Mitsuru Sato , Chikayoshi Kamata , Shinya Aoki , Noriko Bota
CPC分类号: G11C13/0007 , B82Y10/00 , G11C11/5685 , G11C13/0069 , G11C2013/009 , G11C2213/17 , G11C2213/31 , G11C2213/32 , G11C2213/71 , G11C2213/72 , H01L27/2409 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/147
摘要: An information recording/reproducing device includes a first electrode layer, a second electrode layer, a recording layer as a variable resistance between the first and second electrode layer, and a circuit which supplies a voltage to the recording layer to change a resistance of the recording layer. Each of the first and second electrode layers is comprised of IV or III-V semiconductor doped with p-type carrier or n-type carrier.
摘要翻译: 信息记录/再现装置包括第一电极层,第二电极层,作为第一和第二电极层之间的可变电阻的记录层和向记录层提供电压以改变记录电阻的电路 层。 第一和第二电极层中的每一个由掺杂有p型载体或n型载流子的IV或III-V半导体构成。
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公开(公告)号:US20110031459A1
公开(公告)日:2011-02-10
申请号:US12886254
申请日:2010-09-20
申请人: Kohichi KUBO , Chikayoshi Kamata , Takayuki Tsukamoto , Shinya Aoki , Takahiro Hirai , Tsukasa Nakai , Toshiro Hiraoka
发明人: Kohichi KUBO , Chikayoshi Kamata , Takayuki Tsukamoto , Shinya Aoki , Takahiro Hirai , Tsukasa Nakai , Toshiro Hiraoka
IPC分类号: H01L45/00
CPC分类号: B82Y10/00 , G11B9/04 , G11B9/1481 , G11B9/149 , G11C13/0007 , G11C13/003 , G11C13/0069 , G11C2013/0073 , G11C2213/51 , G11C2213/53 , G11C2213/55 , G11C2213/56 , G11C2213/71 , G11C2213/72 , G11C2213/75 , G11C2213/79 , H01L27/101
摘要: According to one embodiment, an information recording and reproducing device includes a first layer, a second layer and a recording layer. The recording layer is provided between the first layer and the second layer and being capable of reversibly changing between a first state having a first resistance and a second state having a second resistance higher than the first resistance. The recording layer includes a first compound layer and a second compound layer. The first compound layer contains a first compound. The first compound includes a first cation element and a second cation element of a type different from the first cation element. The second compound layer contains a second compound. The second compound includes a transition element having a d-orbital partially filled with electron, and the second compound includes a void site capable of storing at least one of the first cation element and the second cation element.
摘要翻译: 根据一个实施例,信息记录和再现装置包括第一层,第二层和记录层。 记录层设置在第一层和第二层之间,并且能够在具有第一电阻的第一状态和具有高于第一电阻的第二电阻的第二状态之间可逆地改变。 记录层包括第一化合物层和第二化合物层。 第一化合物层含有第一化合物。 第一化合物包括第一阳离子元件和不同于第一阳离子元件的第二阳离子元件。 第二化合物层含有第二化合物。 第二化合物包括具有部分填充有电子的d轨道的过渡元素,并且第二化合物包括能够存储第一阳离子元件和第二阳离子元素中的至少一种的空隙位置。
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公开(公告)号:US20100008209A1
公开(公告)日:2010-01-14
申请号:US12563892
申请日:2009-09-21
申请人: Takayuki Tsukamoto , Kohichi Kubo , Chikayoshi Kamata , Takahiro Hirai , Shinya Aoki , Toshiro Hiraoka
发明人: Takayuki Tsukamoto , Kohichi Kubo , Chikayoshi Kamata , Takahiro Hirai , Shinya Aoki , Toshiro Hiraoka
IPC分类号: G11B9/00
CPC分类号: H01L27/115 , B82Y10/00 , G11B9/04 , G11B9/1436 , G11B9/1481 , G11B9/149 , G11C13/00 , G11C13/0004 , G11C13/0007 , G11C2213/31 , G11C2213/32 , G11C2213/51 , G11C2213/52 , G11C2213/56 , G11C2213/71 , G11C2213/72 , G11C2213/79 , H01L27/11517 , H01L27/2409 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/126 , H01L45/147 , H01L45/1625
摘要: An information recording/reproducing device according to an aspect of the present invention includes a recording layer, and a recording circuit which records data to the recording layer by generating a phase change in the recording layer. The recording layer includes a first chemical compound having one of a Wolframite structure and a Scheelite structure.
摘要翻译: 根据本发明的一个方面的信息记录/再现装置包括记录层和记录电路,其通过在记录层中产生相变来将数据记录到记录层。 记录层包括具有Wolframite结构和Scheelite结构之一的第一化合物。
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公开(公告)号:US07995382B2
公开(公告)日:2011-08-09
申请号:US12636646
申请日:2009-12-11
申请人: Takayuki Tsukamoto , Kohichi Kubo , Chikayoshi Kamata , Takahiro Hirai , Shinya Aoki , Toshiro Hiraoka
发明人: Takayuki Tsukamoto , Kohichi Kubo , Chikayoshi Kamata , Takahiro Hirai , Shinya Aoki , Toshiro Hiraoka
IPC分类号: G11C11/00
CPC分类号: H01L45/147 , B82Y10/00 , G11B9/04 , G11B9/149 , G11C13/0004 , G11C13/0007 , G11C13/003 , G11C16/3427 , G11C2213/53 , G11C2213/75 , H01L27/101 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/126 , H01L45/1625
摘要: An information recording and reproducing apparatus, includes: a recording layer including a first layer including a first compound, the first compound being a conjugated compound including at least two types of cation elements, at least one selected from the cation elements being a transition element having a d orbit incompletely filled by electrons, a shortest distance between adjacent cation elements being not more than 0.32 nm; a voltage application unit that applies a voltage to the recording layer, produces a phase change in the recording layer, and records information; an electrode layer that applies a voltage to the recording layer; and an orientation control layer provided between the recording layer and the electrode layer to control an orientation of the recording layer.
摘要翻译: 一种信息记录和再现装置,包括:记录层,包括第一层,第一层包括第一化合物,第一化合物是包含至少两种阳离子元素的共轭化合物,选自阳离子元素中的至少一种是具有 ad轨道不完全填充电子,相邻阳离子元素之间的最短距离不大于0.32nm; 向记录层施加电压的电压施加单元,在记录层中产生相变,记录信息; 向记录层施加电压的电极层; 以及设置在记录层和电极层之间的取向控制层,以控制记录层的取向。
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公开(公告)号:US20110026294A1
公开(公告)日:2011-02-03
申请号:US12886040
申请日:2010-09-20
申请人: Takayuki Tsukamoto , Takeshi Yamaguchi , Chikayoshi Kamata , Tsukasa Nakai , Takahiro Hirai , Shinya Aoki , Kohichi Kubo
发明人: Takayuki Tsukamoto , Takeshi Yamaguchi , Chikayoshi Kamata , Tsukasa Nakai , Takahiro Hirai , Shinya Aoki , Kohichi Kubo
CPC分类号: G11B9/04 , B82Y10/00 , G11B9/149 , G11B11/002 , G11B11/08 , G11C11/5678 , G11C11/5685 , G11C13/0004 , G11C13/0007 , G11C13/003 , G11C16/0483 , G11C2211/565 , G11C2213/32 , G11C2213/56 , G11C2213/71 , G11C2213/72 , G11C2213/75 , G11C2213/78 , G11C2213/79 , H01L27/101 , H01L27/2409 , H01L27/2481 , H01L45/06 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/144 , H01L45/147 , H01L45/16 , H01L45/1675
摘要: According to one embodiment, an information recording and reproducing device includes a first layer, a second layer and a recording layer. The recording layer is provided between the first and second layers and is capable of reversibly transitioning between a first state and a second state with a resistance higher than in the first state. One of the first and second layers includes a resistivity distribution layer perpendicular to a stacking direction of the first and second layers, and the recording layer. The resistivity distribution layer includes a low and a high resistivity portion. Resistivity of the high resistivity portion is higher than resistivity of the low resistivity portion. The low resistivity portion contains a transition element identical to a transition element contained in the high resistivity portion.
摘要翻译: 根据一个实施例,信息记录和再现装置包括第一层,第二层和记录层。 记录层设置在第一层和第二层之间,并且能够以比第一状态高的电阻在第一状态和第二状态之间可逆地转换。 第一层和第二层之一包括垂直于第一层和第二层的层叠方向的电阻率分布层和记录层。 电阻率分布层包括低电阻率部分和高电阻率部分。 高电阻率部分的电阻率高于低电阻率部分的电阻率。 低电阻率部分包含与包含在高电阻率部分中的过渡元素相同的过渡元件。
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公开(公告)号:US20110024713A1
公开(公告)日:2011-02-03
申请号:US12858975
申请日:2010-08-18
申请人: Chikayoshi KAMATA , Takayuki Tsukamoto , Kohichi Kubo , Shinya Aoki , Takahiro Hirai , Toshiro Hiraoka
发明人: Chikayoshi KAMATA , Takayuki Tsukamoto , Kohichi Kubo , Shinya Aoki , Takahiro Hirai , Toshiro Hiraoka
CPC分类号: H01L45/06 , G11C13/0004 , G11C2213/72 , H01L27/2409 , H01L27/2481 , H01L45/1233 , H01L45/1253 , H01L45/144 , H01L45/1625 , H01L45/1641 , H01L45/165 , H01L45/1658 , H01L45/1675 , Y10S257/92 , Y10S977/712 , Y10S977/734
摘要: According to one embodiment, a nonvolatile memory device includes a stacked body including a first layer, a second layer and a recording layer. The recording layer is provided between the first layer and the second layer. The recording layer is capable of reversibly changing between a first state and a second state having a resistance higher than a resistance in the first state by a current supplied via the first layer and the second layer. The recording layer includes a first portion and a second portion provided in a plane of a major surface of the recording layer. The second portion has a nitrogen amount higher than a nitrogen amount in the first portion.
摘要翻译: 根据一个实施例,非易失性存储器件包括包括第一层,第二层和记录层的层叠体。 记录层设置在第一层和第二层之间。 记录层能够通过经由第一层和第二层提供的电流在具有高于第一状态的电阻的电阻的第一状态和第二状态之间可逆地改变。 记录层包括设置在记录层的主表面的平面中的第一部分和第二部分。 第二部分具有比第一部分中的氮量高的氮量。
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公开(公告)号:US20100316831A1
公开(公告)日:2010-12-16
申请号:US12859911
申请日:2010-08-20
申请人: Kohichi Kubo , Chikayoshi Kamata , Takayuki Tsukamoto , Shinya Aoki , Takahiro Hirai , Toshiro Hiraoka
发明人: Kohichi Kubo , Chikayoshi Kamata , Takayuki Tsukamoto , Shinya Aoki , Takahiro Hirai , Toshiro Hiraoka
IPC分类号: B32B3/02
CPC分类号: G11B9/04
摘要: According to one embodiment, an information recording and reproducing device includes a resistive layer directly or indirectly added to a recording layer and having electric resistivity larger than electric resistivity in the low-resistance state of the recording layer. A first compound contained in the recording layer comprises a composite compound includes two or more kinds of cationic elements, at least one of the two or more kinds of cationic elements is a transition element having a d orbit filled incompletely with electrons, a shortest distance between cationic elements adjacent to each other is 0.32 nm or less.
摘要翻译: 根据一个实施例,信息记录和再现装置包括直接或间接添加到记录层的电阻层,其电阻率大于记录层的低电阻状态下的电阻率。 包含在记录层中的第一化合物包括复合化合物,包括两种或更多种阳离子元素,两种或多种阳离子元素中的至少一种是具有电子不完全填充轨道的过渡元素,阳离子 彼此相邻的元素为0.32nm以下。
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公开(公告)号:US20100127235A1
公开(公告)日:2010-05-27
申请号:US12636366
申请日:2009-12-11
申请人: Takayuki TSUKAMOTO , Kohichi Kubo , Chikayoshi Kamata , Takahiro Hirai , Shinya Aoki , Toshiro Hiraoka
发明人: Takayuki TSUKAMOTO , Kohichi Kubo , Chikayoshi Kamata , Takahiro Hirai , Shinya Aoki , Toshiro Hiraoka
IPC分类号: H01L45/00
CPC分类号: G11B9/149 , B82Y10/00 , G11B9/04 , G11B9/1436 , G11B9/1481 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/126 , H01L45/147 , H01L45/1625
摘要: An information recording/reproducing device includes a recording layer, and a recording circuit which records data to the recording layer by generating a phase change in the recording layer. The recording layer includes a first chemical compound having a spinel structure. The recording layer is AxMyX4 (0.1≦x≦2.2, 1.0≦y≦2.0), where A includes one selected from a group of Zn, Cd and Hg, M includes one selected from a group of Ti, Zr, Hf, V, Nb and Ta, and X includes O.
摘要翻译: 一种信息记录/再现装置,包括记录层,以及通过在记录层中产生相位变化而将数据记录到记录层的记录电路。 记录层包括具有尖晶石结构的第一化合物。 记录层为AxMyX4(0.1≦̸ x≦̸ 2.2,1.0≦̸ y≦̸ 2.0),其中A包括选自Zn,Cd和Hg的一种,M包括选自Ti,Zr,Hf, V,Nb和Ta,X包括O.
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公开(公告)号:US08305797B2
公开(公告)日:2012-11-06
申请号:US13044384
申请日:2011-03-09
申请人: Shinya Aoki , Kohichi Kubo , Takayuki Tsukamoto , Takahiro Hirai , Chikayoshi Kamata , Tsukasa Nakai
发明人: Shinya Aoki , Kohichi Kubo , Takayuki Tsukamoto , Takahiro Hirai , Chikayoshi Kamata , Tsukasa Nakai
IPC分类号: G11C11/00
CPC分类号: H01L45/1233 , G11B9/04 , G11C13/0011 , H01L27/101 , H01L27/2436 , H01L27/2463 , H01L45/085 , H01L45/146
摘要: According to one embodiment, an information recording/reproducing device includes a recording layer and a driver section. The recording layer has a first layer including a first compound. The first compound includes a mixed crystal of a first oxide containing a first metallic element and a second oxide. The second oxide has a crystal structure being same as the first oxide and contains a second metallic element different from the first metallic element. The driver section is configured to produce state change in the recording layer to record information by at least one of application of voltage to the recording layer and passage of current to the recording layer. Composition ratio of an element having a smaller ionic radius of the first and second metallic elements is not less than percolation threshold of a lattice formed of ions of the first and second metallic elements based on the crystal structure.
摘要翻译: 根据一个实施例,信息记录/再现装置包括记录层和驱动器部分。 记录层具有包含第一化合物的第一层。 第一化合物包括含有第一金属元素和第二氧化物的第一氧化物的混合晶体。 第二氧化物具有与第一氧化物相同的晶体结构,并且含有与第一金属元素不同的第二金属元素。 驱动器部分被配置为在记录层中产生状态变化,以通过施加电压至记录层和将电流流向记录层中的至少一个来记录信息。 基于晶体结构,第一和第二金属元素离子半径较小的元素的组成比不小于由第一和第二金属元素的离子形成的晶格的渗透阈值。
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