System and method for the analysis of semiconductor test data
    52.
    发明授权
    System and method for the analysis of semiconductor test data 有权
    用于半导体测试数据分析的系统和方法

    公开(公告)号:US07171335B2

    公开(公告)日:2007-01-30

    申请号:US11019065

    申请日:2004-12-21

    IPC分类号: G21C17/00 G06F15/00

    摘要: According to one embodiment, a method of analyzing semiconductor test data includes receiving a plurality of raw data entries from a testing system. Each raw data entry is associated with a test structure of a semiconductor device, and each raw data entry is uniquely identified by a name including a plurality of parseable fields. The plurality of data entries is parsed using a selected one of the plurality of parseable fields to identify a grouping of raw data entries. At least one reportable parameter indicative of the functionality of the test structures associated with the grouping of raw data entries is calculated, and the at least one reportable parameter is provided to a user.

    摘要翻译: 根据一个实施例,分析半导体测试数据的方法包括从测试系统接收多个原始数据条目。 每个原始数据条目与半导体器件的测试结构相关联,并且每个原始数据条目由包括多个可解析字段的名称唯一地标识。 使用多个可解析字段中的所选择的一个解析多个数据条目以标识原始数据条目的分组。 计算指示与分组原始数据条目相关联的测试结构的功能的至少一个可报告参数,并且向用户提供至少一个可报告参数。

    System and method for the analysis of semiconductor test data
    53.
    发明申请
    System and method for the analysis of semiconductor test data 有权
    用于半导体测试数据分析的系统和方法

    公开(公告)号:US20060136174A1

    公开(公告)日:2006-06-22

    申请号:US11019065

    申请日:2004-12-21

    IPC分类号: G21C17/00

    摘要: According to one embodiment, a method of analyzing semiconductor test data includes receiving a plurality of raw data entries from a testing system. Each raw data entry is associated with a test structure of a semiconductor device, and each raw data entry is uniquely identified by a name including a plurality of parseable fields. The plurality of data entries is parsed using a selected one of the plurality of parseable fields to identify a grouping of raw data entries. At least one reportable parameter indicative of the functionality of the test structures associated with the grouping of raw data entries is calculated, and the at least one reportable parameter is provided to a user.

    摘要翻译: 根据一个实施例,分析半导体测试数据的方法包括从测试系统接收多个原始数据条目。 每个原始数据条目与半导体器件的测试结构相关联,并且每个原始数据条目由包括多个可解析字段的名称唯一地标识。 使用多个可解析字段中的所选择的一个解析多个数据条目以标识原始数据条目的分组。 计算指示与原始数据条目的分组相关联的测试结构的功能的至少一个可报告参数,并且向用户提供至少一个可报告参数。

    Method of forming a relaxed semiconductor buffer layer on a substrate with a large lattice mismatch
    54.
    发明申请
    Method of forming a relaxed semiconductor buffer layer on a substrate with a large lattice mismatch 有权
    在具有大晶格失配的衬底上形成松散半导体缓冲层的方法

    公开(公告)号:US20050164473A1

    公开(公告)日:2005-07-28

    申请号:US10763305

    申请日:2004-01-23

    摘要: A method of forming a relaxed silicon-germanium layer for use as an underlying layer for a subsequent overlying tensile strain silicon layer, has been developed. The method features initial growth of a underlying first silicon-germanium layer on a semiconductor substrate, compositionally graded to feature the largest germanium content at the interface of the first silicon-germanium layer and the semiconductor substrate, with the level of germanium decreasing as the growth of the graded first silicon-germanium layer progresses. This growth sequence allows the largest lattice mismatch and greatest level of threading dislocations to be present at the bottom of the graded silicon-germanium layer, with the magnitude of lattice mismatch and threading dislocations decreasing as the growth of the graded silicon-germanium layer progresses. In situ growth of an overlying silicon-germanium layer featuring uniform or non-graded germanium content, results in a relaxed silicon-germanium layer with a minimum of dislocations propagating from the underlying graded silicon-germanium layer. In situ growth of a silicon layer results in a tensile strain, low defect density layer to be used for MOSFET device applications.

    摘要翻译: 已经开发了形成用于随后的上覆拉伸应变硅层的下层的松弛硅 - 锗层的方法。 该方法的特征在于半导体衬底上的底层第一硅 - 锗层的初始生长,其组成分级以在第一硅 - 锗层和半导体衬底的界面处具有最大的锗含量,锗的含量随着生长 的分级第一硅锗层进行。 该生长序列允许最大的晶格失配和最高级别的穿透位错存在于渐变硅 - 锗层的底部,随着梯度硅 - 锗层的生长进行,晶格失配和穿透位错的大小减小。 具有均匀或非分级锗含量的上覆硅锗层的原位生长导致松弛的硅 - 锗层,其中最小的位错从下面的梯度硅 - 锗层传播。 硅层的原位生长导致用于MOSFET器件应用的拉伸应变,低缺陷密度层。

    Optical fiber cable with single strength member unit in cable outer jacket
    55.
    发明授权
    Optical fiber cable with single strength member unit in cable outer jacket 有权
    电缆外护套中带有单强度元件的光纤电缆

    公开(公告)号:US06459837B1

    公开(公告)日:2002-10-01

    申请号:US09600652

    申请日:2000-07-28

    IPC分类号: G02B644

    摘要: An optical fiber cable has a core with a bore which loosely contains optical fibers and includes a single strength member unit preferably embedded in an outer jacket which surrounds the core. The single strength member unit allows for relative ease of bending of the cable in directions other than the bending directions in the plane of minimum bending energy for the cable, such as bending in the plane of maximum bending energy (MAX-BP) for the cable, and provides that the neutral surface associated with bending of the cable in the MAX-BP is outside the bore core and within the outer jacket. The single strength member unit, which is at least one strength member, furthermore provides tensile strength and antibuckling properties to the cable during storage and in expected installations, including an aerial installation. The outer jacket is releasably coupled to the core to provide ease of access to the optical fibers contained within the core bore.

    摘要翻译: 光纤电缆具有芯,其具有宽松地包含光纤的孔,并且包括优选地嵌入围绕芯的外护套的单个强度构件单元。 单个强度构件单元允许电缆在电缆的最小弯曲能量平面内的弯曲方向以外的方向上的相对容易弯曲,例如在电缆的最大弯曲能量(MAX-BP)的平面中的弯曲 ,并且规定与MAX-BP中的电缆的弯曲相关联的中性表面在孔芯之外和外护套内。 作为至少一个强度构件的单个强度构件单元还在储存期间和预期的安装(包括空中安装)中向缆索提供拉伸强度和抗压缩性能。 外护套可释放地联接到芯部以便容易地接近包含在芯孔内的光纤。

    Optical fiber cable with single strength member in cable outer jacket
    56.
    发明授权
    Optical fiber cable with single strength member in cable outer jacket 有权
    电缆外护套中带有单强度构件的光纤电缆

    公开(公告)号:US6137936A

    公开(公告)日:2000-10-24

    申请号:US359427

    申请日:1999-07-22

    IPC分类号: G02B6/44

    摘要: An optical fiber cable has a core with a bore which loosely contains optical fibers and includes a single strength member embedded in an outer jacket which surrounds the core. The strength member allows for relative ease of bending of the cable in directions other than the bending directions in the plane of minimum bending energy for the cable, such as bending in the plane of maximum bending energy (MAX-BP) for the cable, and provides that the neutral surface associated with bending of the cable in the MAX-BP is outside the bore core and within the outer jacket. The single strength member furthermore provides tensile strength and antibuckling properties to the cable during storage and in expected installations, including an aerial installation. The outer jacket is releasably coupled to the core to provide ease of access to the optical fibers contained within the core bore.

    摘要翻译: 光纤电缆具有一个具有松散地包含光纤的孔的芯,并且包括嵌入围绕芯的外护套的单个强度构件。 强度构件允许电缆在电缆的最小弯曲能量平面内的弯曲方向以外的方向上的相对容易弯曲,例如在电缆的最大弯曲能量(MAX-BP)的平面内的弯曲,以及 规定与MAX-BP中的电缆弯曲相关联的中性表面在孔芯之外和外护套内。 单个强度构件还在存储期间和预期的安装(包括空中安装)中向电缆提供拉伸强度和抗压缩性能。 外护套可释放地联接到芯部以便容易地接近包含在芯孔内的光纤。

    Method and device in node for wireless communication

    公开(公告)号:US11431448B2

    公开(公告)日:2022-08-30

    申请号:US16991061

    申请日:2020-08-12

    IPC分类号: H04L5/00 H04W72/04 H04L1/00

    摘要: The present disclosure discloses a method and a device in a node for wireless communication. The first node transmits first information; receives second information; transmits a first bit-block set on a first time-frequency-resource block; transmits or drops transmission of a third bit-block set on a third time-frequency-resource block; and receives a second signal on a fourth time-frequency-resource block; the first information is used for indicating that the fourth time-frequency-resource block is associated with the third time-frequency-resource block; the second information indicates that the fourth time-frequency-resource block is associated with the first time-frequency-resource block; the second signal is used for indicating whether a target bit-block set is correctly received; when the first node transmits the third bit-block set on the third time-frequency-resource block, the target bit-block set is the third bit-block set, otherwise the target bit-block set is the first bit-block set.

    Smart Microscope System for Radiation Biodosimetry

    公开(公告)号:US20210124904A1

    公开(公告)日:2021-04-29

    申请号:US17137317

    申请日:2020-12-29

    摘要: Automation of microscopic pathological diagnosis relies on digital image quality, which, in turn, affects the rates of false positive and negative cellular objects designated as abnormalities. Cytogenetic biodosimetry is a genotoxic assay that detects dicentric chromosomes (DCs) arising from exposure to ionizing radiation. The frequency of DCs is related to radiation dose received, so the inferred radiation dose depends on the accuracy of DC detection. To improve this accuracy, image segmentation methods are used to rank high quality cytogenetic images and eliminate suboptimal metaphase cell data in a sample based on novel quality measures. When sufficient numbers of high quality images are found, the microscope system is directed to terminate metaphase image collection for a sample. The International Atomic Energy Agency recommends at least 500 images be used to estimate radiation dose, however often many more images are collected in order to select the metaphase cells with good morphology for analysis. Improvements in DC recognition increase the accuracy of dose estimates, by reducing false positive (FP) DC detection. A set of chromosome morphology segmentation methods selectively filtered out false DCs, arising primarily from extended prometaphase chromosomes, sister chromatid separation and chromosome fragmentation. This reduced FPs by 55% and was highly specific to the abnormal structures (≥97.7%). Additional procedures were then developed to fully automate image review, resulting in 6 image-level filters that, when combined, selectively remove images with consistently unparsable or incorrectly segmented chromosome morphologies. Overall, these filters can eliminate half of the FPs detected by manual image review. Optimal image selection and FP DCs are minimized by combining multiple feature based segmentation filters and a novel image sorting procedure based on the known distribution of chromosome lengths. Consequently, the average dose estimation error was reduced from 0.4 Gy to

    Method and apparatus for non-adaptive retransmission

    公开(公告)号:US10411841B2

    公开(公告)日:2019-09-10

    申请号:US13817077

    申请日:2011-07-29

    申请人: Xudong Zhu Jin Liu

    发明人: Xudong Zhu Jin Liu

    IPC分类号: H04W4/00 H04L1/18 H04L5/00

    摘要: The present invention provides a method and apparatus for use in non-adaptive retransmission. The method comprises: configuring an uplink UL demodulation reference signal DM-RS for retransmission in response to a retransmission request. In one embodiment, the demodulation reference signal DM-RS is configured to be the same as a demodulation reference signal for an initial transmission. In another embodiment, the demodulation reference signal DM-RS is configured with respect to the number of layer(s) for retransmission according to predetermined rules for the initial transmission.

    MEMS electrostatic actuator
    60.
    发明授权

    公开(公告)号:US09734951B2

    公开(公告)日:2017-08-15

    申请号:US13255479

    申请日:2010-03-10

    IPC分类号: H01G5/013 H01G5/011 H01G5/16

    CPC分类号: H01G5/0136 H01G5/011 H01G5/16

    摘要: A MEMS electrostatic actuator comprises first and second opposing electrode arrangements, wherein at least one of the electrode arrangements is movable. A dielectric material (24) is adjacent the one of the electrode arrangements (22). The second electrode arrangement is patterned such that it includes electrode areas (26) and spaces adjacent the electrode areas, wherein the dielectric material (24) extends at least partially in or over the spaces. The invention uses a multitude of electrode portions as one plate. The electric field lines thus form clusters between the individual electrode portions and the opposing electrode. This arrangement provides an extended range of continuous actuation and tunability.