公开(公告)号：US5514468A

公开(公告)日：1996-05-07

申请号：US145173

申请日：1993-11-03

申请人： Hideo Kaneko ,  Katsushi Tokunaga ,  Yoshio Tawara ,  Yoshiaki Shimizu ,  Tadao Nomura

发明人： Hideo Kaneko ,  Katsushi Tokunaga ,  Yoshio Tawara ,  Yoshiaki Shimizu ,  Tadao Nomura

IPC分类号： G11B11/105 ,  B32B3/02 ,  B32B5/16 ,  G11B5/66

CPC分类号： G11B11/10584 ,  G11B11/10593 ,  Y10S428/90 ,  Y10T428/26 ,  Y10T428/265

摘要： A magneto-optical recording medium having a layered structure consisting of a first dielectric layer, magnetic recording layer, second dielectric layer and reflecting layer successively formed on a transparent substrate plate can be imparted with improved performance relative to the recording sensitivity and the C/N ratio when the recording layer and the second dielectric layer each have such a thickness that the angle .delta. given by the equation .delta.=tan.sup.-1 (.epsilon./.theta.k), in which .epsilon. is the Kerr ellipticity of the regenerative light and .theta.k is the Kerr rotation angle, does not exceed 10.degree., the thickness of the recording layer being in the range from 8 nm to 13.5 nm and the thickness of the second dielectric layer satisfying the relationship given by the inequality0.06.ltoreq.nd/.lambda..ltoreq.0.14,in which d is the thickness of the second dielectric layer, .lambda. is the wavelength of the regenerative light for reading-out of the recorded signals and n is the refractive index of the material forming the second dielectric layer to the regenerative light of wavelength .lambda..

摘要翻译： 具有由第一电介质层，磁记录层，第二电介质层和连续形成在透明基板上的反射层组成的层状结构的磁光记录介质可以相对于记录灵敏度和C / N 当记录层和第二介电层各自具有这样的厚度，即由等式delta = tan-1（epsilon /θk）给出的角度δ，其中ε是再生光的Kerr椭圆率和θk是 克尔旋转角不超过10°，记录层的厚度在8nm至13.5nm的范围内，第二介电层的厚度满足不等式0.06

公开(公告)号：US4146391A

公开(公告)日：1979-03-27

申请号：US839885

申请日：1977-10-06

申请人： Kiyoshi Inoue ,  Hideo Kaneko

发明人： Kiyoshi Inoue ,  Hideo Kaneko

IPC分类号： C22C38/00 ,  C22C38/02 ,  C22C38/06 ,  H01F1/147

CPC分类号： C22C38/06 ,  C22C38/02 ,  H01F1/14791

摘要： A rollable or plastically deformable Sendust-type magnetic alloy containing by weight 3 to 8% aluminum, 4 to 8% silicon, 0.1 to 2% niobium or tantalum or mixture thereof, 0.5 to 7% a mixture of vanadium and copper and the balance iron. The alloy is especially suitable for use with high-frequency inputs.

摘要翻译： 包含重量为3至8％的铝，4至8％的硅，0.1至2％的铌或钽或其混合物的可卷曲或塑性可变形的Sendust型磁性合金，0.5至7％的钒和铜的混合物以及余量为 。 该合金特别适用于高频输入。

公开(公告)号：US20120064438A1

公开(公告)日：2012-03-15

申请号：US13228501

申请日：2011-09-09

申请人： Hiroki YOSHIKAWA ,  Yukio Inazuki ,  Ryuji Koitabashi ,  Hideo Kaneko ,  Takashi Haraguchi ,  Yosuke Kojima ,  Tomohito Hirose

发明人： Hiroki YOSHIKAWA ,  Yukio Inazuki ,  Ryuji Koitabashi ,  Hideo Kaneko ,  Takashi Haraguchi ,  Yosuke Kojima ,  Tomohito Hirose

IPC分类号： G03F7/20 ,  H01L21/31 ,  G03F1/00

CPC分类号： G03F1/72 ,  G03F1/32 ,  G03F1/48 ,  G03F1/50

摘要： A photomask blank has a film of a transition metal/silicon base material comprising a transition metal, silicon, oxygen and nitrogen, having an oxygen content of at least 3 atom %, and satisfying the formula: 4×CSi/100−6×CM/100>1 wherein CSi is a silicon content in atom % and CM is a transition metal content in atom %.

摘要翻译： 光掩模坯料具有包含氧含量为至少3原子％的过渡金属，硅，氧和氮的过渡金属/硅基材的膜，并且满足下式：4×CSi / 100-6×CM 其中CSi是原子％的硅含量，CM是原子％的过渡金属含量。

公开(公告)号：US20100248091A1

公开(公告)日：2010-09-30

申请号：US12750121

申请日：2010-03-30

申请人： Yukio INAZUKI ,  Hideo Kaneko ,  Hiroki Yoshikawa

发明人： Yukio INAZUKI ,  Hideo Kaneko ,  Hiroki Yoshikawa

IPC分类号： G03F1/00 ,  G01B11/24

CPC分类号： G03F1/84 ,  G03F7/70783

摘要： A photomask blank which is manufactured by depositing a phase shift film on a substrate and irradiating the phase shift film with high-energy radiation to effect substrate shape adjusting treatment is inspected by measuring a surface topography of the photomask blank after the substrate shape adjusting treatment, removing the phase shift film from the photomask blank, measuring a surface topography of the treated substrate after removal of the phase shift film, and comparing the surface topographies, thereby evaluating a warpage change before and after removal of the phase shift film, due to a stress of the phase shift film having undergone substrate shape adjusting treatment.

摘要翻译： 通过在基板形状调整处理之后测量光掩模坯料的表面形貌来检查通过在基板上沉积相变膜并用高能辐射照射相移膜来进行基板形状调整处理而制造的光掩模坯料， 从光掩模坯料中去除相移膜，在移除相移膜之后测量处理过的基板的表面形貌，并比较表面形貌，由此评估在移相膜之前和之后的翘曲变化，由于 经过衬底形状调整处理的相移膜的应力。

公开(公告)号：US07037625B2

公开(公告)日：2006-05-02

申请号：US10179969

申请日：2002-06-26

申请人： Hideo Kaneko ,  Yukio Inazuki ,  Tetsushi Tsukamoto ,  Satoshi Okazaki

发明人： Hideo Kaneko ,  Yukio Inazuki ,  Tetsushi Tsukamoto ,  Satoshi Okazaki

IPC分类号： G03F1/00

CPC分类号： G03F1/58 ,  B32B18/00 ,  C04B35/16 ,  C04B35/58007 ,  C04B35/58042 ,  C04B35/597 ,  C04B2235/9653 ,  C04B2237/34 ,  C04B2237/36 ,  C04B2237/704 ,  G03F1/32

摘要： A phase shift mask blank is composed of a transparent substrate and a phase shift film thereon. The phase shift film is made of at least two types of layer stacked in alternation, each type having a different composition and containing at least one element selected from among metals, silicon, oxygen and nitrogen. The alternately layered film enables a high-quality phase shift mask blank having improved chemical resistance to be achieved.

公开(公告)号：US06733930B2

公开(公告)日：2004-05-11

申请号：US10073415

申请日：2002-02-13

申请人： Tsutomu Shinagawa ,  Tamotsu Maruyama ,  Hideo Kaneko ,  Mikio Kojima ,  Yukio Inazuki ,  Satoshi Okazaki

发明人： Tsutomu Shinagawa ,  Tamotsu Maruyama ,  Hideo Kaneko ,  Mikio Kojima ,  Yukio Inazuki ,  Satoshi Okazaki

IPC分类号： G03F900

CPC分类号： G03F1/50 ,  G03F1/46 ,  G03F1/80

摘要： In a photomask blank comprising a light-shielding film and an antireflective film on a transparent substrate, the light-shielding film and the antireflective film are formed of a chromium base material containing oxygen, nitrogen and carbon such that the content of carbon decreases stepwise or continuously from a surface side toward the substrate. The photomask blank can be etched at a controlled rate to produce perpendicular walls. A photomask is manufactured by lithographically patterning the photomask blank. The photomask blank and photomask have uniform film properties and contribute to the microfabrication of semiconductor ICs of greater density and finer feature size.

摘要翻译： 在透明基板上包括遮光膜和抗反射膜的光掩模坯料中，遮光膜和抗反射膜由含有氧，氮和碳的铬基材料形成，使得碳含量逐步降低或 从表面侧连续地朝向基板。 可以以受控的速率蚀刻光掩模坯料以产生垂直的壁。 通过光刻图案化光掩模坯料制造光掩模。 光掩模坯料和光掩模具有均匀的膜性质，并且有助于具有更大密度和更精细特征尺寸的半导体IC的微细加工。

公开(公告)号：US06666957B2

公开(公告)日：2003-12-23

申请号：US10036685

申请日：2001-12-21

申请人： Masataka Watanabe ,  Satoshi Okazaki ,  Hideo Kaneko ,  Ken Ohashi ,  Hideki Kobayashi

发明人： Masataka Watanabe ,  Satoshi Okazaki ,  Hideo Kaneko ,  Ken Ohashi ,  Hideki Kobayashi

IPC分类号： C23C1435

CPC分类号： H01J37/3455 ,  C23C14/35 ,  H01J37/3408

摘要： The present invention provides a magnetron sputtering system, which ensures a formation of a desired thin film, using a thick target. In the sputtering process, a portion of the target does not have erosion free portions. The present invention provides a magnetron sputtering system comprising a chamber for sputtering, a target electrode 5 installed inside said chamber, a substrate electrode 6 installed in the chamber opposite to the target electrode, a ring-shaped magnet 2 installed so as to enclose the side surface of the target electrode, and a semi-circular disk shaped magnet installed opposite to the target-mounted surface of the target electrode, wherein the semi-circular disk shaped magnet is rotated in the circumferential direction of the target electrode and is magnetized in the direction perpendicular to the target electrode. This ensures a specific magnetic field component to be generated over the thick planar target surface 3.

公开(公告)号：US06620593B1

公开(公告)日：2003-09-16

申请号：US08277031

申请日：1994-07-19

申请人： Koji Hayashi ,  Toshiyuki Sakaki ,  Yoshiyasu Yabusaki ,  Koichiro Komai ,  Hideo Kaneko ,  Iwao Nakatsuka

发明人： Koji Hayashi ,  Toshiyuki Sakaki ,  Yoshiyasu Yabusaki ,  Koichiro Komai ,  Hideo Kaneko ,  Iwao Nakatsuka

IPC分类号： C12Q126

CPC分类号： C12Y106/02004 ,  C12N9/0038 ,  C12N9/0077 ,  C12Q1/025

摘要： There is disclosed a method for evaluation of the safety of a chemical compound, which includes the steps of: (a) reacting a chemical compound with recombinant yeast cells expressing, or in other words producing, human cytochrome P450 molecular species P450 1A2, P450 2C9, P450 2E1 and P450 3A4 together with a yeast NADPH-P450 reductase, which may be in the form of a fused enzyme with each of said human cytochrome P450 molecular species, or with the cell free extracts of the yeast cells; and (b) analyzing the resulting metabolite to determine the safety of the compound. According to this method, it can be determined whether a test compound will be converted into a carcinogenic or mutagenic form through the metabolism in the human liver, and whether the test compound or its metabolite has mutagenicity.

摘要翻译： 公开了一种用于评估化合物安全性的方法，其包括以下步骤：（a）使化学化合物与表达或换句话说，生成人细胞色素P450分子种类P450 1A2，P450 2C9的重组酵母细胞 ，P450 2E1和P450 3A4以及酵母NADPH-P450还原酶，其可以是与每种所述人细胞色素P450分子种类的融合酶的形式，或与酵母细胞的无细胞提取物; 和（b）分析得到的代谢物以确定化合物的安全性。 根据该方法，可以确定试验化合物是否将通过人肝脏中的代谢转化为致癌或诱变形式，以及试验化合物或其代谢物是否具有致突变性。

公开(公告)号：US06503669B2

公开(公告)日：2003-01-07

申请号：US09783322

申请日：2001-02-15

申请人： Hideo Kaneko ,  Yukio Inazuki ,  Tamotsu Maruyama ,  Satoshi Okazaki

发明人： Hideo Kaneko ,  Yukio Inazuki ,  Tamotsu Maruyama ,  Satoshi Okazaki

IPC分类号： G03F900

CPC分类号： G03F1/68 ,  C03C17/22 ,  C03C17/225 ,  C03C2217/281 ,  C03C2217/282 ,  C03C2218/155 ,  C23C14/0057 ,  C23C14/06 ,  G03F1/50

摘要： A photomask blank has at least one layer of chromium base film on a transparent substrate. The chromium base film of chromium oxycarbide (CrCO) or chromium oxynitride carbide (CrCON) is formed by a reactive sputtering technique using chromium or chromium containing O, N or C as the target and a mixture of carbon dioxide gas and an inert gas as the sputtering gas. A photomask is manufactured by lithographically patterning the photomask blank. The photomask blank and photomask are of quality featuring high uniformity within the substrate plane and ease of control during manufacture.

摘要翻译： 光掩模坯料在透明衬底上具有至少一层铬基膜。 碳氧化铬（CrCO）或氮氧化铬碳化铬（CrCON）的铬基膜通过使用含有O，N或C的铬或铬作为靶的反应溅射技术形成，并且将二氧化碳气体和惰性气体的混合物作为 溅射气体。 通过光刻图案化光掩模坯料制造光掩模。 光掩模坯料和光掩模的质量在基板平面内具有高均匀性，并且在制造期间易于控制。

公开(公告)号：US06503668B2

公开(公告)日：2003-01-07

申请号：US09757615

申请日：2001-01-11

申请人： Yukio Inazuki ,  Hideo Kaneko ,  Tamotsu Maruyama ,  Satoshi Okazaki

发明人： Yukio Inazuki ,  Hideo Kaneko ,  Tamotsu Maruyama ,  Satoshi Okazaki

IPC分类号： G03F900

CPC分类号： G03F1/32 ,  G03F1/26

摘要： A phase shift mask blank has a phase shift film of MoSiOC or MoSiONC on a transparent substrate, and optionally a chromium-based light-shielding film, a chromium-based antireflection film or a multilayer combination of both on the phase shift film. A manufacture method involving depositing the MoSi base phase shift film by a reactive sputtering technique using a sputtering gas containing carbon dioxide produces a phase shift mask blank and phase shift mask of quality, with advantages of in-plane uniformity and easy control during manufacture.

摘要翻译： 相移掩模空白在透明基板上具有MoSiOC或MoSiONC的相移膜，并且可选地，在相移膜上具有铬基遮光膜，铬基抗反射膜或两者的多层组合。 包括通过使用含有二氧化碳的溅射气体的反应溅射技术沉积MoSi基相变膜的制造方法产生质量的相移掩模坯料和相移掩模，具有在制造过程中面内均匀性和易于控制的优点。