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212 条记录 (耗时 0.038 秒)

    Piezo-oscillator
    52.
    发明申请
    Piezo-oscillator 有权
    压电振荡器

    公开(公告)号：US20060208816A1

    公开(公告)日：2006-09-21

    申请号：US10566287

    申请日：2004-08-03

    申请人： Tsuyoshi Ohshima ,  Shigehisa Kurogo ,  Masayuki Ishikawa ,  Susumu Kurosawa ,  Yuki Fujimoto ,  Yasutaka Nakashiba

    发明人： Tsuyoshi Ohshima ,  Shigehisa Kurogo ,  Masayuki Ishikawa ,  Susumu Kurosawa ,  Yuki Fujimoto ,  Yasutaka Nakashiba

    IPC分类号： H03B5/32

    CPC分类号： H01L27/0811 ,  H01L27/0808 ,  H03B5/04 ,  H03B5/366

    摘要： Deterioration in frequency stability with time in a conventional piezoelectric oscillator using an accumulation type MOS capacitance element is improved. A P-channel transistor type or an N-channel transistor type is used as a MOS capacitance element in a variable capacitance circuit used in a piezoelectric oscillator. A bias voltage is applied between P-type or N-type extraction electrodes formed in source and drain regions and an N-type extraction electrode provided in an N-well region or a P-type extraction electrode provided in a P-well region. Instability in the MOS capacitance element with time is thus eliminated.

    摘要翻译： 在使用积聚型MOS电容元件的传统压电振荡器中频率稳定性随着时间的劣化得到改善。 在压电振荡器中使用的可变电容电路中，使用P沟道晶体管或N沟道晶体管型作为MOS电容元件。 在源极和漏极区域中形成的P型或N型引出电极之间施加偏压，设置在设置在P阱区域的N阱区域或P型引出电极中的N型引出电极。 因此消除了具有时间的MOS电容元件的不稳定性。

    Temperature-compensated piezoelectric oscillator
    53.
    发明申请
    Temperature-compensated piezoelectric oscillator 有权
    温度补偿压电振荡器

    公开(公告)号：US20060202772A1

    公开(公告)日：2006-09-14

    申请号：US11370564

    申请日：2006-03-08

    申请人： Masayuki Ishikawa ,  Atsushi Kiyohara

    发明人： Masayuki Ishikawa ,  Atsushi Kiyohara

    IPC分类号： H03L1/00

    CPC分类号： H03L1/023 ,  H03B5/04 ,  H03B5/368 ,  H03L1/028

    摘要： A temperature compensated piezoelectric oscillator includes: an oscillation circuit that drives a piezoelectric element with a current; a direct-current-stopping fixed capacitor; a frequency-temperature compensated circuit that compensates the deviation of an oscillation frequency caused by a change of temperature; and a piezoelectric transducer which includes a piezoelectric element driven in a prescribed frequency; where the above elements are connected serially.

    摘要翻译： 温度补偿型压电振荡器包括：以电流驱动压电元件的振荡电路; 直流停电固定电容器; 频率温度补偿电路，补偿由温度变化引起的振荡频率的偏差; 以及压电换能器，其包括以规定频率驱动的压电元件; 其中上述元件连续连接。

    Drawing apparatus and method, program and recording medium
    55.
    发明申请
    Drawing apparatus and method, program and recording medium 有权
    绘图装置和方法，程序和记录介质

    公开(公告)号：US20050219266A1

    公开(公告)日：2005-10-06

    申请号：US11012465

    申请日：2004-12-15

    申请人： Taizo Koutani ,  Masayuki Ishikawa

    发明人： Taizo Koutani ,  Masayuki Ishikawa

    IPC分类号： G09G5/38 ,  G06T11/20 ,  G09G5/00 ,  G09G5/14 ,  G09G5/36 ,  G09G5/391

    CPC分类号： G06T11/20 ,  G09G5/14 ,  G09G2340/045

    摘要： Accurate drawing without position displacement is performed irrespective of different aspect ratios on the transmission side of drawing information and on the reception side. In a drawing apparatus 50, a normalized coordinate transformation section 62 transforms normalized coordinates (x3, y3) transmitted via a network into rear coordinates (x2, y3) in accordance with an inverse function g1−1 of a function g1 for normalizing an aspect ratio of an image displayed on a display, and a rear coordinate transformation section 63 transforms the rear coordinates (x2, y2) into front coordinates (x1, y1) in accordance with an inverse function f1−1 of a function f1 corresponding to the aspect ratio of the image. A drawing section 67 draws an image on the screen of the display in accordance with the front coordinates (x1, y1). The invention is applicable, for example, to an application sharing drawing information.

    摘要翻译： 与绘图信息的发送侧和接收侧的不同宽高比无关地执行没有位置偏移的精确绘制。 在绘图装置50中，归一化坐标变换部分62将经由网络发送的归一化坐标（x 3，y 3 3）转换成后坐标（x <2> / SUB>，y 3 3）根据函数g 1的反函数g <1> -1 用于对显示器上显示的图像的纵横比进行标准化，而后坐标变换部分63将后坐标（x2> 2，y2>）转换成前坐标（x 根据对应于函数f 1的函数f 1的反函数f 1 1 - 1 来计算第1个子元素，1个＆lt; 1＆lt; 1＆lt; 1＆gt; 图像的宽高比。 绘图部分67根据前坐标（x 1，y 1，1）在显示器的屏幕上绘制图像。 本发明可以应用于例如应用程序共享图形信息。

    Semiconductor laser diode
    58.
    发明授权
    Semiconductor laser diode 有权
    半导体激光二极管

    公开(公告)号：US06873634B2

    公开(公告)日：2005-03-29

    申请号：US09964463

    申请日：2001-09-28

    申请人： Masaaki Onomura ,  Mariko Suzuki ,  Masayuki Ishikawa

    发明人： Masaaki Onomura ,  Mariko Suzuki ,  Masayuki Ishikawa

    IPC分类号： H01S5/00 ,  H01S5/02 ,  H01S5/20 ,  H01S5/323 ,  H01S5/343

    CPC分类号： B82Y20/00 ,  H01S5/0213 ,  H01S5/0655 ,  H01S5/2004 ,  H01S5/34333

    摘要： The present invention provides a nitride semiconductor laser by which stable high power room-temperature continuous-wave oscillation in fundamental mode is possible. A semiconductor laser diode comprising: a GaN layer; a first conductive type nitride semiconductor layer formed on said GaN layer and made of AlxGa1-xN(0.04≦x≦0.08); a first conductive type clad layer formed on said first conductive type nitride semiconductor layer and made of nitride semiconductor; a core area formed on said first conductive type clad layer and made of nitride semiconductor, said core area including an active layer to emit light by electric current injection; and a second conductive type clad layer formed on said core area and made of nitride semiconductor.

    摘要翻译： 本发明提供一种氮化物半导体激光器，通过该氮化物半导体激光器可以实现基模的稳定的高功率室温连续波振荡。 一种半导体激光二极管，包括：GaN层; 形成在所述GaN层上并由Al x Ga 1-x N（0.04 <= x <= 0.08）制成的第一导电型氮化物半导体层; 形成在所述第一导电型氮化物半导体层上并由氮化物半导体制成的第一导电型覆盖层; 形成在所述第一导电型覆盖层上并由氮化物半导体构成的芯区，所述芯区包括通过电流注入发光的有源层; 以及形成在所述芯区域上并由氮化物半导体制成的第二导电型覆盖层。