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公开(公告)号：US6031858A
公开(公告)日：2000-02-29
申请号：US925764
申请日：1997-09-09
申请人： Genichi Hatakoshi , Masaaki Onomura , John Rennie , Masayuki Ishikawa , Shinya Nunoue , Mariko Suzuki
发明人： Genichi Hatakoshi , Masaaki Onomura , John Rennie , Masayuki Ishikawa , Shinya Nunoue , Mariko Suzuki
CPC分类号： H01S5/32341 , H01S2301/166 , H01S5/0421 , H01S5/0425 , H01S5/22 , H01S5/2219 , H01S5/2231 , H01S5/4043 , H01S5/405 , H01S5/4087
摘要： A semiconductor laser is disclosed, which realizes a continuous oscillation in a fundamental transverse mode at a low operating voltage by a transverse mode control. This semiconductor laser is fabricated by forming successively the following layers on a sapphire substrate 10 in the order an n-type GaN contact layer, an n-type GaAlN cladding layer 13, an MQW active layer 16, a p-type GaAlN cladding layer 19, wherein the laser comprises a double heterostructure including a ridge in the shape of a stripe formed in the cladding layer 19 and a light confining layer 20 formed in a region except the ridge portion of the cladding layer 19 on the double heterostructure, wherein a refractive index of the light confining layer 20 is larger than that of a p-type GaAlN cladding layer.
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公开(公告)号：US06400742B1
公开(公告)日：2002-06-04
申请号：US09498372
申请日：2000-02-04
申请人： Genichi Hatakoshi , Masaaki Onomura , John Rennie , Masayuki Ishikawa , Shinya Nunoue , Mariko Suzuki
发明人： Genichi Hatakoshi , Masaaki Onomura , John Rennie , Masayuki Ishikawa , Shinya Nunoue , Mariko Suzuki
IPC分类号： H01S500
CPC分类号： H01S5/32341 , H01S5/0421 , H01S5/0425 , H01S5/22 , H01S5/2219 , H01S5/2231 , H01S5/4043 , H01S5/405 , H01S5/4087 , H01S2301/166
摘要： A semiconductor laser is disclosed, which realizes a continuous oscillation in a fundamental transverse mode at a low operating voltage by a transverse mode control. This semiconductor laser is fabricated by forming successively the following layers on a sapphire substrate 10 in the order an n-type GaN contact layer, an n-type GaAlN cladding layer 13, an MQW active layer 16, a p-type GaAlN cladding layer 19, wherein the laser comprises a double heterostructure including a ridge in the shape of a stripe formed in the cladding layer 19 and a light confining layer 20 formed in a region except the ridge portion of the cladding layer 19 on the double heterostructure, wherein a refractive index of the light confining layer 20 is larger than that of a p-type GaAlN cladding layer.
摘要翻译： 公开了一种半导体激光器，其通过横向模式控制在低工作电压下实现基本横向模式的连续振荡。 该半导体激光器是按照n型GaN接触层，n型GaAlN包覆层13，MQW有源层16，p型GaAlN覆盖层19的顺序依次形成蓝宝石衬底10上的以下层来制造的 其中激光器包括双重异质结构，其包括形成在包覆层19中的条纹形状的脊和形成在双重异质结构上的包层19的脊部之外的区域中的光限制层20，其中折射率 光限制层20的折射率大于p型GaAlN包覆层的折射率。
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公开(公告)号：US06873634B2
公开(公告)日：2005-03-29
申请号：US09964463
申请日：2001-09-28
CPC分类号： B82Y20/00 , H01S5/0213 , H01S5/0655 , H01S5/2004 , H01S5/34333
摘要： The present invention provides a nitride semiconductor laser by which stable high power room-temperature continuous-wave oscillation in fundamental mode is possible. A semiconductor laser diode comprising: a GaN layer; a first conductive type nitride semiconductor layer formed on said GaN layer and made of AlxGa1-xN(0.04≦x≦0.08); a first conductive type clad layer formed on said first conductive type nitride semiconductor layer and made of nitride semiconductor; a core area formed on said first conductive type clad layer and made of nitride semiconductor, said core area including an active layer to emit light by electric current injection; and a second conductive type clad layer formed on said core area and made of nitride semiconductor.
摘要翻译： 本发明提供一种氮化物半导体激光器，通过该氮化物半导体激光器可以实现基模的稳定的高功率室温连续波振荡。 一种半导体激光二极管，包括：GaN层; 形成在所述GaN层上并由Al x Ga 1-x N（0.04 <= x <= 0.08）制成的第一导电型氮化物半导体层; 形成在所述第一导电型氮化物半导体层上并由氮化物半导体制成的第一导电型覆盖层; 形成在所述第一导电型覆盖层上并由氮化物半导体构成的芯区，所述芯区包括通过电流注入发光的有源层; 以及形成在所述芯区域上并由氮化物半导体制成的第二导电型覆盖层。
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公开(公告)号：US5488233A
公开(公告)日：1996-01-30
申请号：US208850
申请日：1994-03-11
申请人： Masayuki Ishikawa , Yukie Nishikawa , Shinji Saito , Peter J. Parbrook , Masaaki Onomura , Koichi Nitta , Genichi Hatakoshi
发明人： Masayuki Ishikawa , Yukie Nishikawa , Shinji Saito , Peter J. Parbrook , Masaaki Onomura , Koichi Nitta , Genichi Hatakoshi
CPC分类号： H01L33/28 , B82Y20/00 , H01L33/0087 , H01S5/347 , H01S5/209 , H01S5/2238 , H01S5/3077
摘要： This invention provides a semiconductor light-emitting device including a semiconductor substrate consisting of a compound semiconductor of elements in the third and fifth groups of the period table, a first compound semiconductor layer formed directly on at least a portion of the semiconductor substrate and consisting of a compound semiconductor containing at least In and P, and a second compound semiconductor formed directly on the first compound semiconductor layer and consisting of a compound semiconductor of elements in the second and sixth groups of the periodic table. With this arrangement, it is possible to sufficiently prevent the occurrence of defects in the interface between the semiconductor substrate and the second compound semiconductor layer consisting of the compound semiconductor of the elements in the second and sixth groups of the periodic table.
摘要翻译： 本发明提供了一种半导体发光器件，其包括由周期表的第三和第五组中的元件的化合物半导体构成的半导体衬底，直接形成在半导体衬底的至少一部分上并由 至少含有In和P的化合物半导体和直接形成在第一化合物半导体层上并由元素周期表的第二和第六组元素的化合物半导体构成的第二化合物半导体。 通过这种布置，可以充分地防止半导体衬底与由周期表的第二组和第六组中的元件的化合物半导体组成的第二化合物半导体层之间的界面中的缺陷的发生。
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公开(公告)号：US06185238B2
公开(公告)日：2001-02-06
申请号：US09026913
申请日：1998-02-20
IPC分类号： H01S319
CPC分类号： B82Y20/00 , H01L2224/16225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48464 , H01L2224/49107 , H01L2224/73265 , H01S5/0213 , H01S5/0224 , H01S5/02272 , H01S5/2213 , H01S5/2219 , H01S5/3211 , H01S5/34333 , H01L2924/00014 , H01L2924/00
摘要： In a nitride compound semiconductor laser including an active layer sandwiched by semiconductor layers of different conduction types on a sapphire substrate, layers of polyimide for current blocking and light confinement are formed on side surfaces of a mesa-type current confining structure with and under the p-side electrode. The laser ensures efficient, uniform carrier injection into the active layer, suppresses higher-order modes other than the fundamental transverse mode, and thereby promises a high reliability ensuring continuous pulsation under a low threshold current and a low operation voltage with low noise characteristics.
摘要翻译： 在蓝宝石衬底上包含由不同导电类型的半导体层夹持的有源层的氮化物化合物半导体激光器中，在p型和p型的台面型限流结构的侧面形成用于电流阻挡和光限制的聚酰亚胺层 侧电极。 激光器确保有源层中有效均匀的载流子注入，抑制基本横模以外的高次模，从而保证高可靠性，确保在低阈值电流和低噪声特性的低工作电压下连续脉动。
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6.发明授权
公开(公告)号：US6121634A
公开(公告)日：2000-09-19
申请号：US27490
申请日：1998-02-20
申请人： Shinji Saito , Genichi Hatakoshi , Masaaki Onomura , Hidetoshi Fujimoto , Norio Iizuka , Chiharu Nozaki , Johji Nishio , Masayuki Ishikawa
发明人： Shinji Saito , Genichi Hatakoshi , Masaaki Onomura , Hidetoshi Fujimoto , Norio Iizuka , Chiharu Nozaki , Johji Nishio , Masayuki Ishikawa
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/025 , H01S5/34333
摘要： In a nitride compound semiconductor light emitting device, an In.sub.0.3 Ga.sub.0.7 N/GaN multi-quantum well active layer 105 or an In.sub.0.1 Ga.sub.0.9 N/GaN multi-quantum well adjacent layer 104 is made as a saturable absorptive region so that self-pulsation occurs there. Thus, the device ensures self-pulsation with a high probability with a simple structure, and satisfies requirements for use as an optical head for reading data from an optical disc.
摘要翻译： 在氮化物化合物半导体发光器件中，将In0.3Ga0.7N / GaN多量子阱有源层105或In0.1Ga0.9N / GaN多量子阱相邻层104制成为可饱和吸收区域，使得自身 脉搏发生在那里。 因此，该装置以简单的结构以高概率确保自脉动，并且满足用作从光盘读取数据的光学头的要求。
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公开(公告)号：US5696389A
公开(公告)日：1997-12-09
申请号：US402659
申请日：1995-03-13
申请人： Masayuki Ishikawa , Hideto Sugawara , Yukie Nishikawa , Masaaki Onomura , Shinji Saito , Peter James Parbrook , Genichi Hatakoshi , Koichi Nitta , John Rennie , Hiroaki Yoshida , Atsushi Kamata
发明人： Masayuki Ishikawa , Hideto Sugawara , Yukie Nishikawa , Masaaki Onomura , Shinji Saito , Peter James Parbrook , Genichi Hatakoshi , Koichi Nitta , John Rennie , Hiroaki Yoshida , Atsushi Kamata
IPC分类号： H01L27/15 , H01L33/06 , H01L33/08 , H01L33/10 , H01L33/16 , H01L33/20 , H01L33/28 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/56 , H01S5/042 , H01S5/183 , H01S5/40 , H01L29/41 , H01S3/19
CPC分类号： H01L33/38 , B82Y20/00 , H01L33/20 , H01S5/18341 , H01L27/153 , H01L33/0079 , H01L33/145 , H01L33/382 , H01S2301/203 , H01S5/0422 , H01S5/0425 , H01S5/1835 , H01S5/347 , H01S5/4087
摘要： A light-emitting semiconductor device comprising an n-type cladding layer provided on a surface of a substrate and having concentric first and second parts, a first electrode mounted on the first part of the n-type cladding layer, a p-type cladding layer provided above the surface of the substrate and surrounding the first electrode and the second part of the n-type cladding layer, and a second electrode provided on the p-type cladding layer.
摘要翻译： 一种发光半导体器件，包括设置在基板的表面上并具有同心的第一和第二部分的n型覆层，安装在n型覆层的第一部分上的第一电极，p型覆层 设置在基板的表面上并且包围n型包覆层的第一电极和第二部分，以及设置在p型覆层上的第二电极。
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8.发明授权
公开(公告)号：US6015979A
公开(公告)日：2000-01-18
申请号：US143560
申请日：1998-08-28
CPC分类号： H01L33/025 , H01L33/007
摘要： Nitride-based semiconductor element comprises a first layer, a mask formed on the first layer and has a plurality of opening portions, a nitride-based compound semiconductor layer formed on the mask, the nitride-based compound semiconductor layer including a first region having threading dislocations produced in such a manner that, in approximately a middle portion between two adjacent ones of the plurality of opening portions in the mask, a plurality of dislocations extend in a vertical direction to a surface of the mask, and a second region which comprises portions other than the middle portions and free from the dislocations, and a desired element structure formed on the semiconductor layer.
摘要翻译： 氮化物系半导体元件包括第一层，形成在第一层上的掩模，并且具有多个开口部分，形成在掩模上的氮化物基化合物半导体层，所述氮化物基化合物半导体层包括具有穿线的第一区域 以这样的方式产生的位错，即在掩模中的多个开口部分的两个相邻的开口部分中的大致中间部分中，多个位错在垂直方向上延伸到掩模的表面，第二区域包括部分 除了中间部分之外并且没有位错，以及形成在半导体层上的期望的元件结构。
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公开(公告)号：US6005263A
公开(公告)日：1999-12-21
申请号：US976916
申请日：1997-11-24
CPC分类号： H01L33/025 , H01L33/007 , H01L33/0087
摘要： A semiconductor device includes a first semiconductor layer formed of first semiconductor, a second semiconductor layer formed on the first semiconductor layer and formed of second semiconductor of a group different from a group to which the first semiconductor belongs, and a third semiconductor layer formed between the first and second semiconductor layers, the third semiconductor layer being one of a layer formed of third semiconductor of the same group as the first semiconductor and having an impurity concentration higher than the first semiconductor layer and a layer formed of fourth semiconductor of the same group as the second semiconductor and having an impurity concentration higher than the second semiconductor layer.
摘要翻译： 半导体器件包括由第一半导体形成的第一半导体层，形成在第一半导体层上并由不同于第一半导体所属的基团的第二半导体形成的第二半导体层以及形成在第一半导体之间的第三半导体层 第一和第二半导体层，第三半导体层是由与第一半导体相同的组的第三半导体形成的层，其杂质浓度高于第一半导体层，由与第一半导体层相同的第四半导体形成的层 所述第二半导体具有高于所述第二半导体层的杂质浓度。
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公开(公告)号：US5821555A
公开(公告)日：1998-10-13
申请号：US618823
申请日：1996-03-20
CPC分类号： H01L33/025 , H01L33/007 , H01L33/0087
摘要： A semiconductor device includes a first semiconductor layer formed of first semiconductor, a second semiconductor layer formed on the first semiconductor layer and formed of second semiconductor of a group different from a group to which the first semiconductor belongs, and a third semiconductor layer formed between the first and second semiconductor layers, the third semiconductor layer being one of a layer formed of third semiconductor of the same group as the first semiconductor and having an impurity concentration higher than the first semiconductor layer and a layer formed of fourth semiconductor of the same group as the second semiconductor and having an impurity concentration higher than the second semiconductor layer.
摘要翻译： 半导体器件包括由第一半导体形成的第一半导体层，形成在第一半导体层上并由不同于第一半导体所属的基团的第二半导体形成的第二半导体层以及形成在第一半导体之间的第三半导体层 第一和第二半导体层，第三半导体层是由与第一半导体相同的组的第三半导体形成的层，其杂质浓度高于第一半导体层，由与第一半导体层相同的第四半导体形成的层 所述第二半导体具有高于所述第二半导体层的杂质浓度。
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