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    Scanned rapid thermal processing with feed forward control
    51.
    发明申请
    Scanned rapid thermal processing with feed forward control 有权
    扫描快速热处理与前馈控制

    公开(公告)号：US20060289504A1

    公开(公告)日：2006-12-28

    申请号：US11151879

    申请日：2005-06-13

    申请人： Andreas Hegedus

    发明人： Andreas Hegedus

    IPC分类号： H05B6/50

    CPC分类号： H01L21/67115

    摘要： A thermal processing system and method including scanning a line beam of intense radiation in a direction transverse to the line direction for thermally processing a wafer with a localized effectively pulsed beam of radiant energy. The thickness of the wafer is two-dimensionally mapped and the map is used to control the degree of thermal processing, for example, the intensity of radiation in the line beam to increase the uniformity. The processing may include selective etching of a pre-existing layer or depositing more material by chemical vapor deposition.

    摘要翻译： 一种热处理系统和方法，包括在横向于线方向的方向上扫描强辐射的线束，以用局部有效脉冲的辐射能量束热处理晶片。 将晶片的厚度二维地映射，并且使用该图来控制热处理的程度，例如，线束中的辐射强度以增加均匀性。 该处理可以包括选择性蚀刻预先存在的层或通过化学气相沉积沉积更多的材料。

    Elimination of flow and pressure gradients in low utilization processes
    52.
    发明申请
    Elimination of flow and pressure gradients in low utilization processes 失效
    在低利用率过程中消除流量和压力梯度

    公开(公告)号：US20060029747A1

    公开(公告)日：2006-02-09

    申请号：US10914964

    申请日：2004-08-09

    申请人： James Cruse ,  Andreas Hegedus ,  Satheesh Kuppurao

    发明人： James Cruse ,  Andreas Hegedus ,  Satheesh Kuppurao

    IPC分类号： H05H1/24 ,  B05C11/00 ,  C23C16/00

    CPC分类号： C23C16/455 ,  C23C8/10 ,  C23C8/36 ,  C23C16/24 ,  C23C16/45557 ,  C30B25/14 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/28525 ,  H01L21/3115 ,  H01L21/3144

    摘要： The amount of atoms diffused into a substrate may be made uniform or the thickness of a thin film may be made uniform in a low species utilization process by stopping the flow of gas into a reaction chamber during the low species utilization process. Stopping the flow of gas into a reaction chamber may entail closing the gate valve (the valve to the vacuum pump), stabilizing the pressure within the reaction chamber, and maintaining the stabilized pressure while stopping the gas flowing into the chamber. Low species utilization processes include the diffusion of nitrogen into silicon dioxide gate dielectric layers by decoupled plasma nitridation (DPN), the deposition of a silicon dioxide film by rapid thermal processing (RTP) or chemical vapor deposition (CVD), and the deposition of silicon epitaxial layers by CVD.

    摘要翻译： 扩散到基板中的原子的量可以在低物质利用过程中通过在低物质利用过程中停止气体流入反应室而在低物质利用过程中使薄膜的厚度均匀。 停止进入反应室的气体流可能需要关闭闸阀（真空泵的阀），稳定反应室内的压力，并在停止流入室内的气体的同时保持稳定的压力。 低物种利用过程包括通过解耦等离子体氮化（DPN）将氮扩散到二氧化硅栅极电介质层中，通过快速热处理（RTP）或化学气相沉积（CVD）沉积二氧化硅膜，以及沉积硅 外延层通过CVD。

    Substrate processing apparatus using a batch processing chamber
    53.
    发明申请
    Substrate processing apparatus using a batch processing chamber 审中-公开
    使用批处理室的基板处理装置

    公开(公告)号：US20060156979A1

    公开(公告)日：2006-07-20

    申请号：US11286063

    申请日：2005-11-22

    申请人： Randhir Thakur ,  Steve Ghanayem ,  Joseph Yudovsky ,  Aaron Webb ,  Adam Brailove ,  Nir Merry ,  Vinay Shah ,  Andreas Hegedus

    发明人： Randhir Thakur ,  Steve Ghanayem ,  Joseph Yudovsky ,  Aaron Webb ,  Adam Brailove ,  Nir Merry ,  Vinay Shah ,  Andreas Hegedus

    IPC分类号： H01L21/322 ,  C23C16/00

    CPC分类号： H01L21/67109 ,  C23C16/4412 ,  C23C16/45546 ,  C23C16/45593 ,  C23C16/4584 ,  C23C16/481 ,  C23C16/54 ,  H01L21/67017 ,  H01L21/67115 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/67745 ,  H01L21/67757 ,  H01L21/67781

    摘要： Aspects of the invention include a method and apparatus for processing a substrate using a multi-chamber processing system (e.g., a cluster tool) adapted to process substrates in one or more batch and/or single substrate processing chambers to increase the system throughput. In one embodiment, a system is configured to perform a substrate processing sequence that contains batch processing chambers only, or batch and single substrate processing chambers, to optimize throughput and minimize processing defects due to exposure to a contaminating environment. In one embodiment, a batch processing chamber is used to increase the system throughput by performing a process recipe step that is disproportionately long compared to other process recipe steps in the substrate processing sequence that are performed on the cluster tool. In another embodiment, two or more batch chambers are used to process multiple substrates using one or more of the disproportionately long processing steps in a processing sequence. Aspects of the invention also include an apparatus and method for delivering a precursor to a processing chamber so that a repeatable ALD or CVD deposition process can be performed.

    摘要翻译： 本发明的方面包括使用适于在一个或多个批次和/或单个基板处理室中处理基板以增加系统吞吐量的多室处理系统（例如，集群工具）来处理基板的方法和装置。 在一个实施例中，系统被配置为执行仅包含批处理室的衬底处理序列，或批处理和单个衬底处理室，以优化生产量并且由于暴露于污染环境而最小化处理缺陷。 在一个实施例中，批处理室用于通过执行与在集群工具上执行的衬底处理序列中的其他工艺配方步骤相比不成比例地长的工艺配方步骤来增加系统吞吐量。 在另一个实施方案中，使用两个或更多个间隔室来处理多个基板，使用处理顺序中的一个或多个不成比例的长处理步骤。 本发明的方面还包括用于将前体输送到处理室的装置和方法，使得可以执行可重复的ALD或CVD沉积工艺。

    Processing multilayer semiconductors with multiple heat sources
    55.
    发明申请
    Processing multilayer semiconductors with multiple heat sources 有权

    公开(公告)号：US20060018639A1

    公开(公告)日：2006-01-26

    申请号：US11187188

    申请日：2005-07-22

    申请人： Sundar Ramamurthy ,  Andreas Hegedus ,  Randhir Thakur

    发明人： Sundar Ramamurthy ,  Andreas Hegedus ,  Randhir Thakur

    IPC分类号： A21B2/00

    CPC分类号： H01L21/67103

    摘要： A method and apparatus for rapid thermal annealing comprising a plurality of lamps affixed to a lid of the chamber that provide at least one wavelength of light, a laser source extending into the chamber, a substrate support positioned within a base of the chamber, an edge ring affixed to the substrate support, and a gas distribution assembly in communication with the lid and the base of the chamber. A method and apparatus for rapid thermal annealing comprising a plurality of lamps comprising regional control of the lamps and a cooling gas distribution system affixed to a lid of the chamber, a heated substrate support with magnetic levitation extending through a base of the chamber, an edge ring affixed to the substrate support, and a gas distribution assembly in communication with the lid and the base of the chamber.

    Concentric Showerhead For Vapor Deposition
    56.
    发明申请
    Concentric Showerhead For Vapor Deposition 有权
    用于气相沉积的同心淋浴头

    公开(公告)号：US20100092668A1

    公开(公告)日：2010-04-15

    申请号：US12576797

    申请日：2009-10-09

    申请人： Andreas Hegedus

    发明人： Andreas Hegedus

    IPC分类号： C23C16/455 ,  C23C16/00 ,  B01F15/02

    CPC分类号： C23C16/301 ,  C23C16/45519 ,  C23C16/45576 ,  C23C16/4583 ,  C23C16/481 ,  C23C16/54 ,  Y10T137/87571

    摘要： Embodiments of the invention generally relate to a concentric gas manifold assembly used in deposition reactor or system during a vapor deposition process. In one embodiment, the manifold assembly has an upper section coupled to a middle section coupled to a lower section. The middle section contains an inlet, a manifold extending from the inlet to a passageway, and a tube extending along a central axis and containing a channel along the central axis and in fluid communication with the passageway. The lower section of the manifold assembly contains a second manifold extending from a second inlet to a second passageway and an opening concentric with the central axis. The tube extends to the opening to form a second channel between the tube and an edge of the opening. The second channel is concentric with the central axis and is in fluid communication with the second passageway.

    摘要翻译： 本发明的实施例一般涉及在气相沉积过程中用于沉积反应器或系统中的同心气体歧管组件。 在一个实施例中，歧管组件具有联接到联接到下部的中部的上部。 中间部分包含入口，从入口延伸到通道的歧管以及沿着中心轴延伸并且沿着中心轴线包含通道并与通道流体连通的管。 歧管组件的下部包含从第二入口延伸到第二通道的第二歧管和与中心轴线同心的开口。 管延伸到开口以在管和开口的边缘之间形成第二通道。 第二通道与中心轴线同心并且与第二通道流体连通。

    Contact opening metrology
    57.
    发明申请
    Contact opening metrology 失效
    联系开放计量

    公开(公告)号：US20050173657A1

    公开(公告)日：2005-08-11

    申请号：US11051339

    申请日：2005-02-03

    申请人： Alexander Kadyshevitch ,  Chris Talbot ,  Dmitry Shur ,  Andreas Hegedus

    发明人： Alexander Kadyshevitch ,  Chris Talbot ,  Dmitry Shur ,  Andreas Hegedus

    IPC分类号： H01J37/32 ,  H01L21/00 ,  H01L21/66 ,  H01L23/544

    CPC分类号： H01J37/32935 ,  G01N23/00 ,  H01J2237/281 ,  H01J2237/2815 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/34 ,  H01L2924/3011

    摘要： A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.

    摘要翻译： 一种用于过程监测的方法包括接收具有至少部分导电的第一层的样品和在第一层上形成的第二层，在通过蚀刻工艺生产第二层中的接触开口之后，接触开口包括多个 测试孔具有不同的相应的横向尺寸。 带电粒子的束被引导以照射测试孔。 响应于光束，测量流过第一层的样本电流和从样品表面发射的电子的总产率中的至少一个，从而产生蚀刻指示符信号。 作为测试开口的横向尺寸的函数分析蚀刻指示符信号，以便评估蚀刻工艺的特性。