摘要:
Embodiments of the present invention relate to configurable inputs and/or outputs for memory and memory stacking applications in processor-based systems. More specifically, embodiments of the present invention include processor-based systems with volatile-memory having memory devices that include a die having a circuit configured for enablement by a particular signal, an input pin configured to receive the particular signal, and a path selector configured to selectively designate a signal path to the circuit from the input pin.
摘要:
An apparatus and method couples memory devices in a memory module to a memory hub on the module such that signals traveling from the hub to the devices have approximately the same propagation time regardless of which device is involved. Specifically, the devices are arranged around the hub in pairs, with each pair of devices being oriented such that a functional group of signals for each device in the pair, such as the data bus signals, are positioned adjacent each other on a circuit board of the module. This allows for a data and control-address busses having approximately the same electrical characteristics to be routed between the hub and each of the devices. This physical arrangement of devices allows high speed operation of the module. In one example, the hub is located in the center of the module and eight devices, four pairs, are positioned around the hub.
摘要:
A system and method for decoding command signals that includes a command decoder configured to generate internal control signals to perform an operation based on the command signals and an operating state. The same combination of command signals can request different commands depending on the operating state. A command is selected from a first set of operations according to the command signals when the memory system is in a first operating state and a command is selected from a second set of operations according to the command signals when the memory system is in a second operating state.
摘要:
A method and apparatus are provided for active termination control in a memory by a module register providing an active termination control signal to the memory. The module register monitors a system command bus for read and write commands. In response to detecting a read or write command, the module register generates an active termination control signal to the memory. The memory turns on active termination based on information programmed into one or more mode registers of the memory. The memory maintains the active termination in an on state for a predetermined time based on information programmed into one or more mode registers of the memory.
摘要:
Methods and apparatuses for transferring heat from microelectronic device modules are disclosed. An apparatus in accordance with one embodiment of the invention can include first and second heat transfer portions positioned to face toward opposing faces of a microelectronic device module. Heat transfer fins having different length can extend away from at least one of the heat transfer portions. In one embodiment, the heat transfer fins can be integrally formed with other portions of the apparatus. In other embodiments, modules carrying the heat transfer devices can be mounted at an acute angle relative to a support structure (such as a PCB) so that heat transfer fins from one module can extend adjacent to the end region of the neighboring module. This arrangement can increase the rate at which heat is transferred away from the modules, and can increase the utilization of a limited heat transfer volume within a device, such as a computer.
摘要:
In a high speed memory subsystem differences in each memory device's minimum device read latency and differences in signal propagation time between the memory device and the memory controller can result in widely varying system read latencies. The present invention equalizes the system read latencies of every memory device in a high speed memory system by comparing the differences in system read latencies of each device and then operating each memory device with a device system read latency which causes every device to exhibit the same system read latency.
摘要:
The read latency of a plurality of memory devices in a high speed synchronous memory subsystem is equalized through the use of at least one flag signal. The flag signal has equivalent signal propagation characteristics read clock signal, thereby automatically compensating for the effect of signal propagation. After detecting the flag signal, a memory device will begin outputting data associated with a previously received read command in a predetermined number of clock cycles. For each of the flag signal, the memory controller, at system initialization, determines the required delay between issuing a read command and issuing the flag signal to equalize the system read latencies. The delay(s) are then applied to read transactions during regular operation of the memory system.
摘要:
The read latency of a plurality of memory devices in a high speed synchronous memory subsystem is equalized through the use of at least one flag signal. The flag signal has equivalent signal propagation characteristics read clock signal, thereby automatically compensating for the effect of signal propagation. After detecting the flag signal, a memory device will begin outputting data associated with a previously received read command in a predetermined number of clock cycles. For each of the flag signal, the memory controller, at system initialization, determines the required delay between issuing a read command and issuing the flag signal to equalize the system read latencies. The delay(s) are then applied to read transactions during regular operation of the memory system.