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128 条记录 (耗时 0.035 秒)

    Semiconductor devices and methods of manufacturing the same
    52.
    发明授权
    Semiconductor devices and methods of manufacturing the same 有权
    半导体器件及其制造方法

    公开(公告)号：US09312184B2

    公开(公告)日：2016-04-12

    申请号：US14200274

    申请日：2014-03-07

    申请人： Tea-Kwang Yu ,  Bae-Seong Kwon ,  Yong-Tae Kim ,  Chul-Ho Chung ,  Yong-Suk Choi

    发明人： Tea-Kwang Yu ,  Bae-Seong Kwon ,  Yong-Tae Kim ,  Chul-Ho Chung ,  Yong-Suk Choi

    IPC分类号： H01L21/8234 ,  H01L29/66 ,  H01L27/115 ,  H01L29/423 ,  H01L29/788

    CPC分类号： H01L21/823462 ,  H01L21/823456 ,  H01L27/11546 ,  H01L29/42324 ,  H01L29/66825 ,  H01L29/7881

    摘要： In a method of manufacturing a semiconductor device, a split gate structure is formed on a cell region of a substrate including the cell region and a logic region. The logic region has a high voltage region, an ultra high voltage region and a low voltage region, and the split gate structure includes a first gate insulation layer pattern, a floating gate, a tunnel insulation layer pattern and a control gate. A spacer layer is formed on the split gate structure and the substrate. The spacer layer is etched to form a spacer on a sidewall of the split gate structure and a second gate insulation layer pattern on the ultra high voltage region of the substrate. A gate electrode is formed on each of the high voltage region of the substrate, the second gate insulation layer pattern, and the low voltage region of the substrate.

    摘要翻译： 在制造半导体器件的方法中，在包括单元区域和逻辑区域的衬底的单元区域上形成分离栅极结构。 逻辑区域具有高电压区域，超高压区域和低电压区域，并且分离栅极结构包括第一栅极绝缘层图案，浮动栅极，隧道绝缘层图案和控制栅极。 在分离栅极结构和衬底上形成间隔层。 蚀刻间隔层以在分离栅极结构的侧壁上形成间隔物，并在衬底的超高电压区域上形成第二栅极绝缘层图案。 在基板的高电压区域，第二栅极绝缘层图案和基板的低电压区域中的每一个上形成栅电极。

    Mask read-only memory having a fake select transistor
    53.
    发明授权
    Mask read-only memory having a fake select transistor 有权
    具有假选择晶体管的掩模只读存储器

    公开(公告)号：US08507997B2

    公开(公告)日：2013-08-13

    申请号：US13050241

    申请日：2011-03-17

    申请人： Seung-Jin Yang ,  Yong-Tae Kim ,  Hyuck-Soo Yang ,  Jung-Ho Moon

    发明人： Seung-Jin Yang ,  Yong-Tae Kim ,  Hyuck-Soo Yang ,  Jung-Ho Moon

    IPC分类号： H01L21/70

    CPC分类号： H01L27/0203 ,  H01L27/112 ,  H01L27/11253

    摘要： A mask read-only memory (ROM) includes parallel doping lines of a second conductivity type formed in a substrate of a first conductivity type, a first insulation film formed on the doping lines and the substrate, conductive pads fainted on the first insulation film, a second insulation film formed on the first insulation film and the conductive pads, parallel wires formed on the second insulation film extending perpendicular to the doping lines, contact plugs formed in the first insulation film that connect the doping lines to the conductive pads, and vias formed in the second insulation film that connect the conductive pads to the wires, wherein crossings of the doping lines and the wires define memory cells, contact plugs and vias are formed in memory cells of a first type, and at least one of the contact plug and via are missing from memory cells of a second type.

    摘要翻译： 掩模只读存储器（ROM）包括形成在第一导电类型的衬底中的第二导电类型的并行掺杂线，形成在掺杂线和衬底上的第一绝缘膜，位于第一绝缘膜上的导电焊盘， 形成在所述第一绝缘膜和所述导电焊盘上的第二绝缘膜，形成在垂直于所述掺杂线延伸的所述第二绝缘膜上的平行布线，形成在将所述掺杂线连接到所述导电焊盘的所述第一绝缘膜中的接触插塞，以及通孔 形成在所述第二绝缘膜中，所述第二绝缘膜将所述导电焊盘连接到所述导线，其中所述掺杂线和所述布线的交叉限定存储器单元，接触插塞和通孔形成在第一类型的存储器单元中，并且所述接触插塞 并且第二类型的存储器单元中缺少通孔。

    Nonvolatile memory device and method of manufacturing the same
    56.
    发明申请
    Nonvolatile memory device and method of manufacturing the same 失效
    非易失性存储器件及其制造方法

    公开(公告)号：US20120068249A1

    公开(公告)日：2012-03-22

    申请号：US13064344

    申请日：2011-03-21

    申请人： Tea-Kwang Yu ,  Jeong-Uk Han ,  Yong-Tae Kim

    发明人： Tea-Kwang Yu ,  Jeong-Uk Han ,  Yong-Tae Kim

    IPC分类号： H01L29/788

    CPC分类号： H01L27/11521 ,  H01L27/11519 ,  H01L27/11524

    摘要： The nonvolatile memory device includes a semiconductor substrate, and a device isolation layer defining an active region in the semiconductor substrate. The device isolation layer includes a top surface lower than a top surface of the semiconductor substrate, such that a side-upper surface of the active region is exposed. A sense line crosses both the active region and the device isolation layer, and a word line, spaced apart from the sense line, crosses both the active region and the device isolation layer.

    摘要翻译： 非易失性存储器件包括半导体衬底和限定半导体衬底中的有源区的器件隔离层。 器件隔离层包括比半导体衬底的顶表面低的顶表面，使得有源区的侧上表面被暴露。 感测线与有源区和器件隔离层交叉，并且与感测线间隔开的字线与有源区和器件隔离层交叉。

    Home network system
    57.
    发明授权
    Home network system 有权
    家庭网络系统

    公开(公告)号：US08031724B2

    公开(公告)日：2011-10-04

    申请号：US10558426

    申请日：2004-05-14

    申请人： Sam-Chul Ha ,  Seung-Myun Baek ,  Koon-Seok Lee ,  Yong-Tae Kim

    发明人： Sam-Chul Ha ,  Seung-Myun Baek ,  Koon-Seok Lee ,  Yong-Tae Kim

    IPC分类号： H04L12/28 ,  H04J3/16 ,  G06F15/16 ,  G06F15/173

    CPC分类号： H04L43/00 ,  H04L12/2803 ,  H04L12/2818 ,  H04L12/2825 ,  H04L43/0817 ,  H04L2012/2849

    摘要： The present invention discloses a home network system using a living network control protocol. The home network system includes: at least one electric device; first and second networks based on a predetermined living network control protocol (LnCP); an LnCP access device connected to the electric device through the second network; and a network manager connected to the LnCP access device through the first network, for controlling and monitoring the electric device.

    摘要翻译： 本发明公开了一种使用生活网络控制协议的家庭网络系统。 家庭网络系统包括：至少一个电子设备; 基于预定的生活网络控制协议（LnCP）的第一和第二网络; 通过第二网络连接到电气设备的LnCP接入设备; 以及通过第一网络连接到LnCP接入设备的网络管理器，用于控制和监视电子设备。

    Remote Controlling System For Electric Device
    59.
    发明申请
    Remote Controlling System For Electric Device 审中-公开
    电气设备遥控系统

    公开(公告)号：US20100238046A1

    公开(公告)日：2010-09-23

    申请号：US12223164

    申请日：2006-07-28

    申请人： Hoon-Bong Lee ,  Yong-Han Kim ,  Yong-Tae Kim

    发明人： Hoon-Bong Lee ,  Yong-Han Kim ,  Yong-Tae Kim

    IPC分类号： G08B5/22

    CPC分类号： G08C17/00 ,  G08C2201/42 ,  G08C2201/50

    摘要： The present invention discloses a remote controlling system and method for an electric device, including: one or more electric devices (200, 300) for communicating with a remote controlling device (100) through a wireless communication network, transmitting state information to the remote controlling device (100) according to a state request command from the remote controlling device (100), and controlling operations according to an operation control command from the remote controlling device (100); and the remote controlling device (100) for transmitting the state request command to the electric device (200, 300) selected by the user, and receiving and displaying the state information, or transmitting the operation control command to the electric device (200, 300). The remote controlling system and method for the electric device (200, 300) displays the states of the electric devices (200, 300) and controls the operations thereof.

    摘要翻译： 本发明公开了一种电气设备的遥控系统和方法，包括：一个或多个电气设备（200,300），用于通过无线通信网络与远程控制设备（100）进行通信，将状态信息发送到远程控制 设备（100）根据来自远程控制设备（100）的状态请求命令，根据来自遥控设备（100）的操作控制命令进行控制; 以及用于向用户选择的电气设备（200,300）发送状态请求命令的远程控制设备（100），并且接收并显示状态信息，或者将操作控制命令发送到电子设备（200,300） ）。 电气设备（200,300）的遥控系统和方法显示电气设备（200,300）的状态并控制其操作。

    NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
    60.
    发明申请
    NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
    非易失性存储器件及其制造方法

    公开(公告)号：US20100171168A1

    公开(公告)日：2010-07-08

    申请号：US12648386

    申请日：2009-12-29

    申请人： Tea-Kwang Yu ,  Jeong-Uk Han ,  Yong-Tae Kim

    发明人： Tea-Kwang Yu ,  Jeong-Uk Han ,  Yong-Tae Kim

    IPC分类号： H01L29/788 ,  H01L21/762

    CPC分类号： H01L29/42324 ,  H01L21/28273 ,  H01L21/76224 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/66825 ,  H01L29/7881

    摘要： A non-volatile memory device includes an active region in which a channel of a transistor is formed in a substrate, element isolation films defining the active region and formed on the substrate at both sides of the channel at a height lower than an upper surface of the active region, a first dielectric layer, a second dielectric layer, and a control gate electrode formed on the active region in this order, and a floating gate electrode formed between the first dielectric layer and the second dielectric layer so as to intersect the length direction of the channel and extend to the upper surfaces of the element isolation films at both sides of the channel, thereby surrounding the channel.

    摘要翻译： 非易失性存储器件包括其中在衬底中形成晶体管的沟道的有源区，限定有源区的元件隔离膜，并且形成在通道两侧的基底上，高度低于 有源区，第一电介质层，第二电介质层和控制栅电极，以及在第一介电层和第二电介质层之间形成的与栅极的长度相交的浮栅， 通道的方向并延伸到通道两侧的元件隔离膜的上表面，从而围绕通道。