Method for producing a component, and sensor element
    52.
    发明授权
    Method for producing a component, and sensor element 有权
    用于制造组件和传感器元件的方法

    公开(公告)号:US08530261B2

    公开(公告)日:2013-09-10

    申请号:US12522693

    申请日:2007-11-28

    IPC分类号: H01L21/00

    摘要: A method for producing a component having at least one diaphragm formed in the upper surface of the component, which diaphragm spans a cavity, and having at least one access opening to the cavity from the back side of the component, at least one first diaphragm layer and the cavity being produced in a monolithic semiconductor substrate from the upper surface of the component, and the access opening being produced in a temporally limited etching step from the back side of the substrate. The access opening is placed in a region in which the substrate material comes up to the first diaphragm layer. The etching process for producing the access opening includes at least one anisotropic etching step and at least one isotropic etching step, in the anisotropic etching step, an etching channel from the back side of the substrate being produced, which terminates beneath the first diaphragm layer in the vicinity of the cavity, and at least the end region of this etching channel being expanded in the isotropic etching step until the etching channel is connected to the cavity.

    摘要翻译: 一种用于制造具有形成在所述部件的上表面中的至少一个光阑的部件的方法,所述至少一个光阑形成在所述部件的上表面中,所述光阑跨越空腔,并且具有至少一个从所述部件的后侧到所述腔的进入开口,至少一个第一隔膜层 并且所述空腔从所述部件的上表面在单片半导体衬底中产生,并且所述存取开口在时间上受限制的蚀刻步骤中从所述衬底的背面制造。 进入口放置在基板材料到达第一隔膜层的区域中。 用于制造进出口的蚀刻工艺包括至少一个各向异性蚀刻步骤和至少一个各向同性蚀刻步骤,在各向异性蚀刻步骤中,从所述基板的背面制造蚀刻通道,其终止在第一隔膜层下方 该腔的附近,并且至少该蚀刻通道的端部区域在各向同性蚀刻步骤中扩展,直到蚀刻通道连接到空腔。

    Microstructured Chemical Sensor
    54.
    发明申请
    Microstructured Chemical Sensor 有权
    微结构化学传感器

    公开(公告)号:US20070234801A1

    公开(公告)日:2007-10-11

    申请号:US10565984

    申请日:2004-07-23

    IPC分类号: G01N27/12

    CPC分类号: G01N27/12 G01N27/128

    摘要: The invention relates to a sensor comprising a first metallization plane located on a substrate (1), a passivation layer (6) that is structured by contact holes (7) and is applied to said substrate and a sensitive ceramic layer (9) formed by thick-film technology on the passivation layer and in the contact holes (7). The aim of the invention is to improve the adhesion of the ceramic layer (9). To achieve this, the sensor is provided with an adhesion promoter layer (8) that is configured as a second metallization plane and is located between the passivation layer (6) and the ceramic layer (9).

    摘要翻译: 本发明涉及一种传感器,其包括位于基板(1)上的第一金属化平面,由接触孔(7)构成的钝化层(6),并被施加到所述基板和敏感陶瓷层(9) 在钝化层和接触孔(7)中的厚膜技术。 本发明的目的是提高陶瓷层(9)的粘合性。 为了实现这一点,传感器设置有被配置为第二金属化平面并且位于钝化层(6)和陶瓷层(9)之间的粘附促进层(8)。

    Micromechanical device having two sensor patterns; method for producing a micromechanical device
    55.
    发明申请
    Micromechanical device having two sensor patterns; method for producing a micromechanical device 有权
    具有两个传感器图案的微机械装置; 微机械装置的制造方法

    公开(公告)号:US20070169558A1

    公开(公告)日:2007-07-26

    申请号:US11486660

    申请日:2006-07-13

    IPC分类号: G01L7/00

    CPC分类号: G01L9/0054 G01L19/0092

    摘要: A micromechanical device and a method for producing this device are provided, two sensor patterns being provided in the semiconductor material to record two mechanical variables, in particular the pressure and the acceleration. The functionality of both sensor patterns is based on the same predefined converter principle.

    摘要翻译: 提供了一种微机械装置和用于制造该装置的方法,在半导体材料中提供两个传感器图案,以记录两个机械变量,特别是压力和加速度。 两种传感器模式的功能基于相同的预定义转换器原理。

    Micromechanical sensor
    56.
    发明授权
    Micromechanical sensor 有权
    微机械传感器

    公开(公告)号:US07213465B2

    公开(公告)日:2007-05-08

    申请号:US10958014

    申请日:2004-10-04

    IPC分类号: G01F9/00

    摘要: A micromechanical sensor, and a method for manufacturing a micromechanical sensor, featuring, in addition to a sensor element, at least a part of an evaluation circuit. In this context, the micromechanical sensor contains at least a first structural element made of a first material. The first structural element houses at least one sensor region and a part of an evaluation circuit, at least one sensor element being located in the sensor region. Moreover, at least one first and one second side are to be distinguished from one another in the first structural element. The first side of the first structural element features at least the sensor element, while the second side of the first structural element features at least a part of the evaluation circuit. At least parts of the sensor region and/or of the evaluation circuit are formed from the first material by micromechanical processing.

    摘要翻译: 微机械传感器和微机械传感器的制造方法,除传感器元件之外,还具有评估电路的至少一部分。 在本文中,微机械传感器至少包含由第一材料制成的第一结构元件。 第一结构元件容纳至少一个传感器区域和评估电路的一部分,至少一个传感器元件位于传感器区域中。 此外,在第一结构元件中至少一个第一和第二侧面将彼此区分开。 第一结构元件的第一侧至少具有传感器元件,而第一结构元件的第二侧具有评估电路的至少一部分。 传感器区域和/或评估电路的至少一部分通过微机械处理由第一材料形成。

    Gas sensor and method for the production thereof
    57.
    发明申请
    Gas sensor and method for the production thereof 审中-公开
    气体传感器及其制造方法

    公开(公告)号:US20070062812A1

    公开(公告)日:2007-03-22

    申请号:US10565991

    申请日:2004-07-23

    IPC分类号: G01N27/26

    CPC分类号: G01N27/128

    摘要: The invention relates to a gas sensor comprising a membrane layer (3) formed on a semiconductor substrate (2), an evaluation structure (7) being arranged on said substrate in an evaluation area (8) and a heating structure (9) outside the evaluation area (8), in addition to a gas-sensitive layer (10) arranged above the evaluation structure (7) and the heating structure (9), wherein said gas-sensitive layer (10) can be heated by the heating structure (9) and the electrical resistance of the gas-sensitive layer (10) can be evaluated by the evaluation structure (7). The heating structure (9) is arranged on an adhesion-promoting oxide layer (6) on the top surface of the membrane layer (3) and is separated from the gas-sensitive layer by a cover oxide layer (11). In order to enable reliable functionality of the gas sensor, that in the evaluation area (8), an adhesion-promoting layer (13) insensitive to oxide etching is arranged between the membrane layer (3) and the evaluation structure (7) or the evaluation structure (7) in the evaluation area (8) corresponding to the heating structure (9) is separated from the gas-sensitive layer (10) by the cover oxide layer (11), wherein the cover oxide layer (11) has contact holes (12) which uncover a central area of the surface of the evaluation structure (7) in order to produce a direct contact between the evaluation structure (7) and the gas-sensitive layer (10).

    摘要翻译: 本发明涉及一种气体传感器,包括形成在半导体衬底(2)上的膜层(3),评估结构(7)布置在评估区域(8)和加热结构(9)的所述衬底上 评价区域(8),除了设置在评价结构(7)和加热结构(9)之上的气敏层(10)之外,其中所述气敏层(10)可以被加热结构( 9),气敏层(10)的电阻可以通过评价结构(7)进行评价。 加热结构(9)设置在膜层(3)的上表面上的粘附促进氧化物层(6)上,并通过覆盖氧化物层(11)与气敏层分离。 为了实现气体传感器的可靠功能,在评价区域(8)中,在膜层(3)和评价结构(7)之间设置对氧化物蚀刻不敏感的粘附促进层(13) 对应于加热结构(9)的评价区域(8)的评价结构(7)通过覆盖氧化物层(11)与气体敏感层(10)分离,其中,覆盖氧化物层(11)具有接触 孔(12),其露出评估结构(7)的表面的中心区域,以便产生评估结构(7)和气敏层(10)之间的直接接触。

    Method for manufacturing a semiconductor component, as well as a semiconductor component, in particular a membrane sensor
    58.
    发明申请
    Method for manufacturing a semiconductor component, as well as a semiconductor component, in particular a membrane sensor 有权
    用于制造半导体部件的方法以及半导体部件,特别是膜传感器

    公开(公告)号:US20050181529A1

    公开(公告)日:2005-08-18

    申请号:US11011888

    申请日:2004-12-13

    摘要: A manufacturing method for a micromechanical semiconductor element includes providing on a semiconductor substrate a patterned stabilizing element having at least one opening. The opening is arranged such that it allows access to a first region in the semiconductor substrate, the first region having a first doping. Furthermore, a selective removal of at least a portion of the semiconductor material having the first doping out of the first region of the semiconductor substrate is provided. In addition, a membrane is produced above the first region using a first epitaxy layer applied on the stabilizing element. In a further method step, at least a portion of the first region is used to produce a cavity underneath the stabilizing element. In this manner, the present invention provides for the production of the patterned stabilizing element by means of a second epitaxy layer, which is applied on the semiconductor substrate.

    摘要翻译: 微机电半导体元件的制造方法包括在半导体衬底上提供具有至少一个开口的图案化稳定元件。 开口被布置成使得其允许接近半导体衬底中的第一区域,第一区域具有第一掺杂。 此外,提供了选择性地去除半导体衬底的第一区域中具有第一掺杂的半导体材料的至少一部分。 此外,使用施加在稳定元件上的第一外延层,在第一区域上方产生膜。 在另一方法步骤中,第一区域的至少一部分用于在稳定元件下方产生空腔。 以这种方式,本发明提供了通过施加在半导体衬底上的第二外延层来生产图案化的稳定元件。

    Micromechanical sensor
    60.
    发明申请
    Micromechanical sensor 有权
    微机械传感器

    公开(公告)号:US20050115321A1

    公开(公告)日:2005-06-02

    申请号:US10958014

    申请日:2004-10-04

    摘要: A micromechanical sensor, and a method for manufacturing a micromechanical sensor, featuring, in addition to a sensor element, at least a part of an evaluation circuit. In this context, the micromechanical sensor contains at least a first structural element made of a first material. The first structural element houses at least one sensor region and a part of an evaluation circuit, at least one sensor element being located in the sensor region. Moreover, at least one first and one second side are to be distinguished from one another in the first structural element. The first side of the first structural element features at least the sensor element, while the second side of the first structural element features at least a part of the evaluation circuit. At least parts of the sensor region and/or of the evaluation circuit are formed from the first material by micromechanical processing.

    摘要翻译: 微机械传感器和微机械传感器的制造方法,除传感器元件之外,还具有评估电路的至少一部分。 在本文中,微机械传感器至少包含由第一材料制成的第一结构元件。 第一结构元件容纳至少一个传感器区域和评估电路的一部分,至少一个传感器元件位于传感器区域中。 此外,在第一结构元件中至少一个第一和第二侧面将彼此区分开。 第一结构元件的第一侧至少具有传感器元件,而第一结构元件的第二侧具有评估电路的至少一部分。 传感器区域和/或评估电路的至少一部分通过微机械处理由第一材料形成。