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267 条记录 (耗时 0.028 秒)

    Hammer
    52.
    外观设计
    Hammer 失效

    公开(公告)号：USD478264S1

    公开(公告)日：2003-08-12

    申请号：US29162923

    申请日：2002-06-24

    申请人： John Chen

    设计人： John Chen

    Hammer
    53.
    外观设计
    Hammer 失效
    锤子

    公开(公告)号：USD439488S1

    公开(公告)日：2001-03-27

    申请号：US29124572

    申请日：2000-06-07

    申请人： John Chen

    设计人： John Chen

    Shock absorbing handle grip for tool handle
    54.
    发明授权
    Shock absorbing handle grip for tool handle 失效
    减震手柄用于工具手柄

    公开(公告)号：US5926911A

    公开(公告)日：1999-07-27

    申请号：US121660

    申请日：1998-07-24

    申请人： John Chen

    发明人： John Chen

    IPC分类号： B25G1/01 ,  A47B95/02

    CPC分类号： B25G1/01 ,  Y10S16/18 ,  Y10S16/41 ,  Y10T16/444

    摘要： A shock absorbing handle grip includes a sleeve-like rubber grip body sleeved onto the coupling shaft of the handle of a hand tool, a substantially U-shaped flat packing bar inserted from a rear end opening on the grip body and clamped on the coupling shaft of the handle of the hand tool and an end cap fastened to the rear end opening of the grip body, the end cap, the grip body and the packing bar forming an air bag around the coupling shaft of the handle of the hand tool.

    摘要翻译： 减震手柄包括套在手工工具的把手的联接轴上的套筒状橡胶握把体，从手柄本体上的后端开口插入并夹紧在连接轴上的大致U形的扁平包装棒 手柄的把手和固定在握柄本体的后端开口的端盖，端盖，把手本体和包装条围绕手工具的把手的连接轴形成气囊。

    Method for programming flash electrically erasable programmable read-only memory
    56.
    发明授权
    Method for programming flash electrically erasable programmable read-only memory 失效
    闪存电可擦除可编程只读存储器的编程方法

    公开(公告)号：US5875130A

    公开(公告)日：1999-02-23

    申请号：US085705

    申请日：1998-05-27

    申请人： Sameer S. Haddad ,  Wing H. Leung ,  John Chen ,  Ravi S. Sunkavalli ,  Ravi P. Gutala ,  Jonathan S. Su ,  Vei-Han Chan ,  Colin S. Bill

    发明人： Sameer S. Haddad ,  Wing H. Leung ,  John Chen ,  Ravi S. Sunkavalli ,  Ravi P. Gutala ,  Jonathan S. Su ,  Vei-Han Chan ,  Colin S. Bill

    IPC分类号： G11C16/10 ,  G11C16/34 ,  G11C13/00

    CPC分类号： G11C16/3409 ,  G11C16/10 ,  G11C16/3404

    摘要： A flash Electrically-Erasable Programmable Read-Only Memory (EEPROM) includes a semiconductor substrate, and a plurality of field effect transistor memory cells each having a source, drain, floating gate and control gate formed on the substrate. A controller controls a power source to apply an operational pulse to the drain of a cell, and apply a source to substrate bias voltage to the cell while the operational pulse is being applied thereto, the bias voltage having a value selected to reduce or substantially eliminate leakage current in the cell. The operational pulse can be an overerase correction pulse. In this case, a voltage which is substantially equal to the bias voltage is applied to the control gate for the duration of the overerase correction pulse. The operational pulse can also be a programming pulse. In this case, a voltage which is higher than the bias voltage is applied to the control gate of the selected wordline for the duration of the programming pulse. The bias voltage is preferably applied during both the overerase correction and programming pulses, reducing the power requirements and reducing the background leakage of the cells to a level at which program, read and overerase correction operations can be operatively performed.

    摘要翻译： 闪存电可擦除可编程只读存储器（EEPROM）包括半导体衬底和多个场效应晶体管存储单元，每个具有形成在衬底上的源极，漏极，浮置栅极和控制栅极。 控制器控制电源以将操作脉冲施加到单元的漏极，并且在施加操作脉冲时将源施加到单元的衬底偏置电压，所述偏置电压具有被选择为减少或基本上消除的值 电池中的漏电流。 操作脉冲可以是过高修正脉冲。 在这种情况下，在过扫描校正脉冲的持续时间内，向控制栅极施加基本上等于偏置电压的电压。 操作脉冲也可以是编程脉冲。 在这种情况下，在编程脉冲的持续时间内，将高于偏置电压的电压施加到所选字线的控制栅极。 偏置电压优选地在过电压过程校正和编程脉冲期间都被施加，从而降低功率需求并将电池的背景泄漏减小到能够可操作地执行程序，读取和过电压校正操作的电平。

    System for an automated dispensing and retrieval kiosk for recorded media
    59.
    发明授权
    System for an automated dispensing and retrieval kiosk for recorded media 有权
    用于记录介质的自动分配和检索亭的系统

    公开(公告)号：US09224137B1

    公开(公告)日：2015-12-29

    申请号：US11366966

    申请日：2006-03-01

    申请人： Philip Tomasi ,  Alva D. Cravens ,  Jens Horstmann ,  William Barber ,  John Chen

    发明人： Philip Tomasi ,  Alva D. Cravens ,  Jens Horstmann ,  William Barber ,  John Chen

    IPC分类号： G06K7/08 ,  G06K15/00 ,  G06Q20/18 ,  G03G15/00

    CPC分类号： G06Q20/18 ,  B25J9/1612 ,  B25J13/003 ,  B25J13/084 ,  G03G15/55 ,  G07F11/165 ,  G07F17/16 ,  H02K7/14

    摘要： A system for an automated dispensing and retrieval kiosk for recorded media includes a kiosk having a plurality of vertical racks arranged in a circular formation, each vertical rack configured for storing a plurality of recorded media. A customer interface allows a customer to select or return a recorded media. A robotic element delivers the selected recorded media from the vertical racks to a media output, at the customer interface. The element also delivers a returned recorded media from a media input at the customer interface to the vertical racks. A computer controls operation of the kiosk, and an internet interface connects the kiosk to the Internet. The kiosk may communicate with a central server and/or other kiosks of a group, to locate a requested recorded media within a kiosk of the group. Once located within the group, the requested media may be reserved for customer pick-up.

    摘要翻译： 用于记录介质的自动分配和检索亭的系统包括具有以圆形形式布置的多个垂直架的售货亭，每个垂直货架被配置用于存储多个记录介质。 客户界面允许客户选择或返回录制的媒体。 机器人元件将所选择的记录介质从垂直机架传送到客户界面的媒体输出。 该元件还将从客户界面的媒体输入返回的记录媒体传送到垂直机架。 计算机控制信息亭的操作，并且互联网接口将信息亭连接到因特网。 信息亭可以与组的中央服务器和/或其他信息亭进行通信，以将所请求的记录媒体定位在该组的信息亭内。 一旦位于组内，所请求的媒体可能被保留用于客户接送。

    MANUFACTURING METHODS FOR ACCURATELY ALIGNED AND SELF-BALANCED SUPERJUNCTION DEVICES
    60.
    发明申请
    MANUFACTURING METHODS FOR ACCURATELY ALIGNED AND SELF-BALANCED SUPERJUNCTION DEVICES 审中-公开
    精确对准和自平衡超级设备的制造方法

    公开(公告)号：US20150357406A1

    公开(公告)日：2015-12-10

    申请号：US14298922

    申请日：2014-06-08

    申请人： Lingpeng Guan ,  Madhur Bobde ,  Anup Bhalla ,  Yeeheng Lee ,  John Chen ,  Moses Ho

    发明人： Lingpeng Guan ,  Madhur Bobde ,  Anup Bhalla ,  Yeeheng Lee ,  John Chen ,  Moses Ho

    IPC分类号： H01L29/06 ,  H01L21/266 ,  H01L21/324 ,  H01L29/10

    CPC分类号： H01L29/0634 ,  H01L21/2253 ,  H01L21/266 ,  H01L21/324 ,  H01L29/1095 ,  H01L29/66712 ,  H01L29/7802

    摘要： This invention discloses a method for manufacturing a semiconductor power device on a semiconductor substrate supporting a . drift region composed of an epitaxial layer. The method includes a first step of growing a first epitaxial layer followed by forming a first hard mask layer on top of the epitaxial layer; a second step of applying a first implant mask to open a plurality of implant windows and applying a second implant mask for blocking some of the implant windows to implant a plurality of dopant regions of alternating conductivity types adjacent to each other in the first epitaxial layer; and a third step of repeating the first step and the second step by applying the same first and second implant masks to form a plurality of epitaxial layers, each of which is implanted with the dopant regions of the alternating conductivity types. Then the manufacturing processes proceed by carrying out a device manufacturing process on a top side of the epitaxial layer on top of the dopant regions of the alternating conductivity types with a diffusion process to merge the dopant regions of the alternating conductivity types as doped columns in the epitaxial layers.

    摘要翻译： 本发明公开了一种在半导体基板上制造半导体功率器件的方法， 漂移区由外延层组成。 该方法包括：生长第一外延层，然后在外延层顶部形成第一硬掩模层的第一步骤; 第二步骤，施加第一注入掩模以打开多个植入窗口，并施加第二注入掩模以阻挡一些植入窗口，以在第一外延层中相互邻近地注入交替导电类型的多个掺杂区; 以及通过施加相同的第一和第二注入掩模来重复第一步骤和第二步骤以形成多个外延层的第三步骤，其中每个外延层被注入交替导电类型的掺杂区域。 然后通过在交变导电类型的掺杂剂区域的顶部上的外延层的顶侧上进行器件制造工艺来进行制造工艺，其具有扩散处理，以将交替导电类型的掺杂区域作为掺杂列合并在 外延层。