摘要:
The present invention describes thermoplastic compositions having high resilience (high coefficient of restitution) and low moisture sensitivity, and their use as golf ball components. Melt-processible, highly-neutralized ethylene acid copolymers and process for making them by incorporating an aliphatic, mono-functional organic acid in the acid copolymer and then neutralizing greater than 70% of all the acid groups present. Such compositions comprising at least 50% Zn and/or Ca as counterions for the salts exhibit surprising resistance to moisture absorption.
摘要:
A golf ball having a polytrimethylene ether glycol-based polymer in one or more layers of the ball is disclosed. The polytrimethylene ether glycol polymer is disclosed as being derived from polyether ester elastomers comprising a polytrimethylene ether soft segment; polyether-ester-amide elastomers comprising a polytrimethylene ether soft segment; and polyurethanes and polyurethane-ureas prepared by reaction of (a) polytrimethylene ether glycol, (b) diisocyanate, and (c) diol or diamine chain extender.
摘要:
A shock absorbing handle grip includes a sleeve-like rubber grip body sleeved onto the coupling shaft of the handle of a hand tool, a substantially U-shaped flat packing bar inserted from a rear end opening on the grip body and clamped on the coupling shaft of the handle of the hand tool and an end cap fastened to the rear end opening of the grip body, the end cap, the grip body and the packing bar forming an air bag around the coupling shaft of the handle of the hand tool.
摘要:
A flash Electrically-Erasable Programmable Read-Only Memory (EEPROM) includes a semiconductor substrate, and a plurality of field effect transistor memory cells each having a source, drain, floating gate and control gate formed on the substrate. A controller controls a power source to apply an operational pulse to the drain of a cell, and apply a source to substrate bias voltage to the cell while the operational pulse is being applied thereto, the bias voltage having a value selected to reduce or substantially eliminate leakage current in the cell. The operational pulse can be an overerase correction pulse. In this case, a voltage which is substantially equal to the bias voltage is applied to the control gate for the duration of the overerase correction pulse. The operational pulse can also be a programming pulse. In this case, a voltage which is higher than the bias voltage is applied to the control gate of the selected wordline for the duration of the programming pulse. The bias voltage is preferably applied during both the overerase correction and programming pulses, reducing the power requirements and reducing the background leakage of the cells to a level at which program, read and overerase correction operations can be operatively performed.
摘要:
This invention discloses a semiconductor power device disposed in a semiconductor substrate. The semiconductor power device comprises a plurality of trenches each having a trench endpoint with an endpoint sidewall perpendicular to a longitudinal direction of the trench and extends vertically downward from a top surface to a trench bottom surface. The semiconductor power device further includes a trench bottom dopant region disposed below the trench bottom surface and a sidewall dopant region disposed along the endpoint sidewall wherein the sidewall dopant region extends vertically downward along the endpoint sidewall of the trench to reach the trench bottom dopant region and pick-up the trench bottom dopant region to the top surface of the semiconductor substrate.