公开(公告)号：US20080171424A1

公开(公告)日：2008-07-17

申请号：US11653802

申请日：2007-01-16

申请人： Tingkai Li ,  Jer-Shen Maa ,  Douglas J. Tweet ,  Wei-Wei Zhuang ,  Sheng Teng Hsu

发明人： Tingkai Li ,  Jer-Shen Maa ,  Douglas J. Tweet ,  Wei-Wei Zhuang ,  Sheng Teng Hsu

IPC分类号： H01L21/205

CPC分类号： H01L21/02513 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265

摘要： A method of fabricating a continuous layer of a defect sensitive material on a silicon substrate includes preparing a silicon substrate; forming a nanostructure array directly on the silicon substrate; depositing a selective growth enhancing layer on the substrate; smoothing the selective growth enhancing layer; and growing a continuous layer of the defect sensitive material on the nanostructure array.

摘要翻译： 在硅衬底上制造缺陷敏感材料的连续层的方法包括制备硅衬底; 在硅衬底上直接形成纳米结构阵列; 在衬底上沉积选择性生长增强层; 平滑选择性生长增强层; 并在纳米结构阵列上生长不连续的缺陷敏感材料层。

公开(公告)号：US20080173895A1

公开(公告)日：2008-07-24

申请号：US11657149

申请日：2007-01-24

申请人： Jer-Shen Maa ,  Tingkai Li ,  Douglas J. Tweet ,  Gregory M. Stecker ,  Sheng Teng Hsu

发明人： Jer-Shen Maa ,  Tingkai Li ,  Douglas J. Tweet ,  Gregory M. Stecker ,  Sheng Teng Hsu

IPC分类号： H01L29/267 ,  H01L21/20

CPC分类号： H01L29/267 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02656 ,  H01L29/045 ,  H01L29/2003

摘要： A method is provided for forming a matching thermal expansion interface between silicon (Si) and gallium nitride (GaN) films. The method provides a (111) Si substrate with a first thermal expansion coefficient (TEC), and forms a silicon-germanium (SiGe) film overlying the Si substrate. A buffer layer is deposited overlying the SiGe film. The buffer layer may be aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN). A GaN film is deposited overlying the buffer layer having a second TEC, greater than the first TEC. The SiGe film has a third TEC, with a value in between the first and second TECs. In one aspect, a graded SiGe film may be formed having a Ge content ratio in a range of about 0% to 50%, where the Ge content increases with the graded SiGe film thickness.

摘要翻译： 提供了一种在硅（Si）和氮化镓（GaN）膜之间形成匹配的热膨胀界面的方法。 该方法提供具有第一热膨胀系数（TEC）的（111）Si衬底，并且形成覆盖Si衬底的硅 - 锗（SiGe）膜。 沉积SiGe膜上的缓冲层。 缓冲层可以是氮化铝（AlN）或铝 - 氮化镓（AlGaN）。 沉积GaN缓冲层，其具有大于第一TEC的第二TEC。 SiGe电影拥有第三个TEC，其值在第一和第二TEC之间。 一方面，可以形成具有Ge含量比在约0％至50％的范围内的等级SiGe膜，其中Ge含量随着梯度SiGe膜厚度而增加。

公开(公告)号：US20080315255A1

公开(公告)日：2008-12-25

申请号：US12199144

申请日：2008-08-27

申请人： Jer-Shen Maa ,  Tingkai Li ,  Douglas J. Tweet ,  Gregory M. Stecker ,  Sheng Teng Hsu

发明人： Jer-Shen Maa ,  Tingkai Li ,  Douglas J. Tweet ,  Gregory M. Stecker ,  Sheng Teng Hsu

IPC分类号： H01L29/267

CPC分类号： H01L29/267 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02656 ,  H01L29/045 ,  H01L29/2003

摘要： A method is provided for forming a matching thermal expansion interface between silicon (Si) and gallium nitride (GaN) films. The method provides a (111) Si substrate with a first thermal expansion coefficient (TEC), and forms a silicon-germanium (SiGe) film overlying the Si substrate. A buffer layer is deposited overlying the SiGe film. The buffer layer may be aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN). A GaN film is deposited overlying the buffer layer having a second TEC, greater than the first TEC. The SiGe film has a third TEC, with a value in between the first and second TECs. In one aspect, a graded SiGe film may be formed having a Ge content ratio in a range of about 0% to 50%, where the Ge content increases with the graded SiGe film thickness.

摘要翻译： 提供了一种在硅（Si）和氮化镓（GaN）膜之间形成匹配的热膨胀界面的方法。 该方法提供具有第一热膨胀系数（TEC）的（111）Si衬底，并且形成覆盖Si衬底的硅 - 锗（SiGe）膜。 沉积SiGe膜上的缓冲层。 缓冲层可以是氮化铝（AlN）或铝 - 氮化镓（AlGaN）。 沉积GaN缓冲层，其具有大于第一TEC的第二TEC。 SiGe电影拥有第三个TEC，其值在第一和第二TEC之间。 一方面，可以形成具有Ge含量比在约0％至50％的范围内的等级SiGe膜，其中Ge含量随着梯度SiGe膜厚度而增加。

公开(公告)号：US06534871B2

公开(公告)日：2003-03-18

申请号：US09855391

申请日：2001-05-14

申请人： Jer-shen Maa ,  Douglas J. Tweet ,  Yoshi Ono ,  Fengyan Zhang ,  Sheng Teng Hsu

发明人： Jer-shen Maa ,  Douglas J. Tweet ,  Yoshi Ono ,  Fengyan Zhang ,  Sheng Teng Hsu

IPC分类号： H01L2348

CPC分类号： H01L21/28518 ,  H01L29/456

摘要： An integrated circuit device, and a method of manufacturing the same, comprises an epitaxial nickel silicide on (100) Si, or a stable nickel silicide on amorphous Si, fabricated with a cobalt interlayer. In one embodiment the method comprises depositing a cobalt (Co) interface layer between the Ni and Si layers prior to the silicidation reaction. The cobalt interlayer regulates the flux of the Ni atoms through the cobalt/nickel/silicon alloy layer formed from the reaction of the cobalt interlayer with the nickel and the silicon so that the Ni atoms reach the Si interface at a similar rate, i.e., without any orientation preference, so as to form a uniform layer of nickel silicide. The nickel silicide may be annealed to form a uniform crystalline nickel disilicide. Accordingly, a single crystal nickel silicide on (100) Si or on amorphous Si is achieved wherein the nickel silicide has improved stability and may be utilized in ultra-shallow junction devices.

公开(公告)号：US07598108B2

公开(公告)日：2009-10-06

申请号：US11825427

申请日：2007-07-06

申请人： Tingkai Li ,  Douglas J. Tweet ,  Jer-Shen Maa ,  Sheng Teng Hsu

发明人： Tingkai Li ,  Douglas J. Tweet ,  Jer-Shen Maa ,  Sheng Teng Hsu

IPC分类号： H01L21/00

CPC分类号： H01L29/155 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02647 ,  H01L29/2003 ,  H01L29/205

摘要： A thermal expansion interface between silicon (Si) and gallium nitride (GaN) films using multiple buffer layers of aluminum compounds has been provided, along with an associated fabrication method. The method provides a (111) Si substrate and deposits a first layer of AlN overlying the substrate by heating the substrate to a relatively high temperature of 1000 to 1200° C. A second layer of AlN is deposited overlying the first layer of AlN at a lower temperature of 500 to 800° C. A third layer of AlN is deposited overlying the second layer of AlN by heating the substrate to the higher temperature range. Then, a grading Al1-XGaXN layer is formed overlying the third layer of AlN, where 0

公开(公告)号：US20090008647A1

公开(公告)日：2009-01-08

申请号：US11825427

申请日：2007-07-06

申请人： Tingkai Li ,  Douglas J. Tweet ,  Jer-Shen Maa ,  Sheng Teng Hsu

发明人： Tingkai Li ,  Douglas J. Tweet ,  Jer-Shen Maa ,  Sheng Teng Hsu

IPC分类号： H01L29/15 ,  H01L21/20

CPC分类号： H01L29/155 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02647 ,  H01L29/2003 ,  H01L29/205

摘要： A thermal expansion interface between silicon (Si) and gallium nitride (GaN) films using multiple buffer layers of aluminum compounds has been provided, along with an associated fabrication method. The method provides a (111) Si substrate and deposits a first layer of AlN overlying the substrate by heating the substrate to a relatively high temperature of 1000 to 1200° C. A second layer of AlN is deposited overlying the first layer of AlN at a lower temperature of 500 to 800° C. A third layer of AlN is deposited overlying the second layer of AlN by heating the substrate to the higher temperature range. Then, a grading Al1-XGaXN layer is formed overlying the third layer of AlN, where 0

摘要翻译： 已经提供了使用多种铝化合物缓冲层的硅（Si）和氮化镓（GaN）膜之间的热膨胀界面，以及相关的制造方法。 该方法提供（111）Si衬底，并通过将衬底加热至1000至1200℃的较高温度，将衬底上的第一层AlN沉积在衬底上。在第一层AlN上沉积第二层AlN， 较低温度为500至800℃。通过将衬底加热到​​较高温度范围，沉积第三层AlN，覆盖第二层AlN。 然后，形成覆盖在第一层次Al1-XGaXN层上的固定组成Al1-XGaXN层的覆盖在第三层AlN上的分级Al1-XGaXN层，其中0

公开(公告)号：US20080296625A1

公开(公告)日：2008-12-04

申请号：US11810022

申请日：2007-06-04

申请人： Tingkai Li ,  Douglas J. Tweet ,  Jer-Shen Maa ,  Sheng Teng Hsu

发明人： Tingkai Li ,  Douglas J. Tweet ,  Jer-Shen Maa ,  Sheng Teng Hsu

IPC分类号： H01L29/06 ,  H01L21/20

CPC分类号： H01L21/02381 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02642 ,  H01L21/02647

摘要： A multilayer thermal expansion interface between silicon (Si) and gallium nitride (GaN) films is provided, along with an associated fabrication method. The method provides a (111) Si substrate and forms a first layer of a first film overlying the substrate. The Si substrate is heated to a temperature in the range of about 300 to 800° C., and the first layer of a second film is formed in compression overlying the first layer of the first film. Using a lateral nanoheteroepitaxy overgrowth (LNEO) process, a first GaN layer is grown overlying the first layer of second film. Then, the above-mentioned processes are repeated: forming a second layer of first film; heating the substrate to a temperature in the range of about 300 to 800° C.; forming a second layer of second film in compression; and, growing a second GaN layer using the LNEO process.

摘要翻译： 提供硅（Si）和氮化镓（GaN）膜之间的多层热膨胀界面以及相关的制造方法。 该方法提供（111）Si衬底并且形成覆盖衬底的第一膜的第一层。 将Si衬底加热至约300至800℃的温度，并且第二膜的第一层以压缩形式覆盖第一膜的第一层。 使用横向纳米外延过度生长（LNEO）工艺，生长第一GaN层，覆盖第一层第二层膜。 然后，重复上述过程：形成第二层第一膜; 将基板加热至约300至800℃的温度; 在压缩中形成第二层第二膜; 并且使用LNEO工艺生长第二GaN层。

公开(公告)号：US20080296616A1

公开(公告)日：2008-12-04

申请号：US11809958

申请日：2007-06-04

申请人： Tingkai Li ,  Douglas J. Tweet ,  Jer-Shen Maa ,  Sheng Teng Hsu

发明人： Tingkai Li ,  Douglas J. Tweet ,  Jer-Shen Maa ,  Sheng Teng Hsu

IPC分类号： H01L21/20 ,  H01L29/20

CPC分类号： H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/0251 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647

摘要： A method is provided for forming a matching thermal expansion interface between silicon (Si) and gallium nitride (GaN) films. The method provides a (111) Si substrate that is heated to a temperature in a range of about 300 to 800° C., and a first film is formed in compression overlying the Si substrate. The first film material may be InP, SiGe, GaP, GaAs, AlN, AlGaN, an AlN/graded AlGaN (Al1−xGaxN (0

摘要翻译： 提供了一种在硅（Si）和氮化镓（GaN）膜之间形成匹配的热膨胀界面的方法。 该方法提供加热至约300至800℃范围内的温度的（111）Si衬底，并且第一膜以压缩形式覆盖Si衬底。 第一膜材料可以是InP，SiGe，GaP，GaAs，AlN，AlGaN，AlN /分级AlGaN（Al1-xGaxN（0

公开(公告)号：US07241670B2

公开(公告)日：2007-07-10

申请号：US10936400

申请日：2004-09-07

申请人： Douglas J. Tweet ,  David R. Evans ,  Sheng Teng Hsu ,  Jer-Shen Maa

发明人： Douglas J. Tweet ,  David R. Evans ,  Sheng Teng Hsu ,  Jer-Shen Maa

IPC分类号： H01L21/26 ,  H01L21/42

CPC分类号： H01L21/02694 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L29/1054 ,  Y10S438/933

摘要： A method of forming a relaxed SiGe layer having a high germanium content in a semiconductor device includes preparing a silicon substrate; depositing a strained SiGe layer; implanting ions into the strained SiGe layer, wherein the ions include silicon ions and ions selected from the group of ions consisting of boron and helium, and which further includes implanting H+ ions; annealing to relax the strained SiGe layer, thereby forming a first relaxed SiGe layer; and completing the semiconductor device.

摘要翻译： 在半导体器件中形成具有高锗含量的弛豫SiGe层的方法包括制备硅衬底; 沉积应变SiGe层; 将离子注入到应变SiGe层中，其中离子包括选自由硼和氦构成的离子组的硅离子和离子，并且还包括注入H +离子; 退火以使应变SiGe层松弛，从而形成第一弛豫SiGe层; 并完成半导体器件。

公开(公告)号：US07018882B2

公开(公告)日：2006-03-28

申请号：US10807931

申请日：2004-03-23

申请人： Douglas J. Tweet ,  Sheng Teng Hsu ,  Jer-Shen Maa

发明人： Douglas J. Tweet ,  Sheng Teng Hsu ,  Jer-Shen Maa

IPC分类号： H01L21/8238 ,  H01L21/336

CPC分类号： H01L29/1054 ,  H01L21/823807 ,  H01L29/78

摘要： A method of forming a substrate for use in IC device fabrication includes preparing a silicon substrate, including doping a bulk silicon (100) substrate with ions taken from the group of ions to form a doped substrate taken from the group of doped substrates consisting of n-type doped substrates and p-type doped substrates; forming a first relaxed SiGe layer on the silicon substrate; forming a first tensile-strained silicon cap on the first relaxed SiGe layer; forming a second relaxed SiGe layer on the first tensile-strained silicon cap; forming a second tensile-strained silicon cap on the second relaxed SiGe layer; and completing an IC device.

摘要翻译： 一种形成用于IC器件制造的衬底的方法包括制备硅衬底，其包括用从离子组中取出的离子掺杂体硅（100）衬底，以形成从由n组成的掺杂衬底组中取出的掺杂衬底 型掺杂衬底和p型掺杂衬底; 在硅衬底上形成第一弛豫的SiGe层; 在第一松弛SiGe层上形成第一拉伸应变硅帽; 在第一拉伸应变硅帽上形成第二松弛SiGe层; 在第二松弛SiGe层上形成第二拉伸应变硅帽; 并完成IC设备。