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106 条记录 (耗时 0.025 秒)

    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
    51.
    发明申请
    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
    等离子体加工设备和等离子体处理方法

    公开(公告)号：US20080178608A1

    公开(公告)日：2008-07-31

    申请号：US11676593

    申请日：2007-02-20

    申请人： Takumi Tandou ,  Kenetsu Yokogawa ,  Masaru Izawa

    发明人： Takumi Tandou ,  Kenetsu Yokogawa ,  Masaru Izawa

    IPC分类号： F25B9/00

    CPC分类号： F25B39/02 ,  F28F2210/02 ,  H01J2237/2001 ,  H01L21/67109

    摘要： There is provided a means for uniformly controlling the in-plane temperature of a semiconductor wafer at high speed in a high heat input etching process. A refrigerant channel structure in a circular shape is formed in a sample stage. Due to a fact that a heat transfer coefficient of a refrigerant is largely changed from a refrigerant supply port to a refrigerant outlet port, the cross sections of the channel structure is structured so as to be increased from a first channel areas towards a second channel areas in order to make the heat transfer coefficient of the refrigerant constant in the refrigerant channel structure. Thereby, the heat transfer coefficient of the refrigerant is prevented from increasing by reducing the flow rate of the refrigerant at a dry degree area where the heat transfer coefficient of the refrigerant is increased. Further, the cross section of the channel structure is structured so as to be reduced from the second channel areas towards a third channel areas, and thereby the heat transfer coefficient of the refrigerant is prevented from decreasing. Accordingly, the heat transfer coefficient of the refrigerant can be uniformed in the channel structure.

    摘要翻译： 提供了一种用于在高热输入蚀刻工艺中高速均匀地控制半导体晶片的面内温度的装置。 在样品台中形成圆形的制冷剂流路结构。 由于制冷剂的传热系数从制冷剂供给口向制冷剂排出口发生很大的变化，所以，通道结构的横截面被构造成从第一通道区域向第二通道区域 以使制冷剂流路结构中的制冷剂的传热系数恒定。 因此，通过降低制冷剂的传热系数增加的干燥区域的制冷剂的流量，可以防止制冷剂的传热系数增加。 此外，通道结构的横截面被构造成从第二通道区域朝向第三通道区域减小，从而防止制冷剂的传热系数降低。 因此，制冷剂的传热系数可以在通道结构中均匀化。

    Substrate-Holder, Etching Method of the Substrate, and the Fabrication Method of a Magnetic Recording Media
    52.
    发明申请
    Substrate-Holder, Etching Method of the Substrate, and the Fabrication Method of a Magnetic Recording Media 审中-公开
    基板保持器，基板的蚀刻方法以及磁记录介质的制造方法

    公开(公告)号：US20080149590A1

    公开(公告)日：2008-06-26

    申请号：US11942849

    申请日：2007-11-20

    申请人： Kenji Maeda ,  Makoto Satake ,  Masaru Izawa

    发明人： Kenji Maeda ,  Makoto Satake ,  Masaru Izawa

    IPC分类号： C23F1/04 ,  C23F1/08

    CPC分类号： H01L21/67069 ,  B82Y10/00 ,  C03C15/00 ,  G11B5/743 ,  G11B5/82 ,  G11B5/8404 ,  G11B5/855 ,  H01J2237/20 ,  H01L21/6875 ,  H01L21/68771 ,  H01L21/68785

    摘要： A substrate holder that forms a concavo-convex pattern on recording layers of both of front and back sides of a magnetic recording media is provided. The substrate holder includes an insulator member having a concave portion that holds the etching substrate and a through-hole formed just below the concave portion, and a conductive member having a convex portion that is engaged with the through-hole. A gap is defined between a front side of the convex portion and the bottom surface of the substrate in a state where the etching substrate is mounted on the concave portion, and a thickness of the gap is equal to or higher than 0.5 mm and equal to or lower than 1 mm, and a thickness of the insulator member is equal to or higher than 1 mm and equal to or lower than 15 mm.

    摘要翻译： 提供了一种在磁记录介质的前后两面的记录层上形成凹凸图案的基板保持件。 基板保持器包括绝缘体构件，其具有保持蚀刻基板的凹部和形成在凹部下方的通孔，以及具有与通孔配合的凸部的导电构件。 在蚀刻基板安装在凹部上的状态下，在凸部的前侧和基板的底面之间限定间隙，并且间隙的厚度等于或大于等于或等于0.5mm 或小于1mm，并且绝缘体构件的厚度等于或大于1mm且等于或小于15mm。

    Plasma processing apparatus
    55.
    发明授权
    Plasma processing apparatus 有权
    等离子体处理装置

    公开(公告)号：US09368377B2

    公开(公告)日：2016-06-14

    申请号：US11836219

    申请日：2007-08-09

    申请人： Takumi Tandou ,  Kenetsu Yokogawa ,  Masaru Izawa

    发明人： Takumi Tandou ,  Kenetsu Yokogawa ,  Masaru Izawa

    IPC分类号： H01L21/67 ,  H01L21/683 ,  H01J37/32 ,  C23C16/46 ,  F25B41/06

    CPC分类号： H01L21/67109 ,  C23C16/463 ,  F25B41/062 ,  H01J37/32431 ,  H01J2237/2001 ,  H01L21/6831 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention provides a temperature control unit for an electrostatic adsorption electrode that is capable of controlling the wafer temperature rapidly over a wide temperature range without affecting in-plane uniformity while high heat input etching is conducted with high wafer bias power applied. A refrigerant flow path provided in the electrostatic adsorption electrode serves as an evaporator. The refrigerant flow path is connected to a compressor, a condenser, and a first expansion valve to form a direct expansion type refrigeration cycle. A second expansion valve is installed between the electrostatic adsorption electrode and the compressor to adjust the flow rate of a refrigerant. This makes it possible to compress the refrigerant in the refrigerant flow path of the electrostatic adsorption electrode and adjust the wafer temperature to a high level by raising the refrigerant evaporation temperature. Further, a thin-walled cylindrical refrigerant flow path is employed so that the thin-walled cylinder is deformed only slightly by the refrigerant pressure.

    摘要翻译： 本发明提供了一种用于静电吸附电极的温度控制单元，其能够在宽的温度范围内快速控制晶片温度，而不会在施加高晶片偏置功率的同时进行高热输入蚀刻的同时不影响面内均匀性。 设置在静电吸附电极中的制冷剂流路用作蒸发器。 制冷剂流路连接到压缩机，冷凝器和第一膨胀阀，以形成直接膨胀型制冷循环。 第二膨胀阀安装在静电吸附电极和压缩机之间，以调节制冷剂的流量。 这使得可以压缩静电吸附电极的制冷剂流路中的制冷剂，并且通过提高制冷剂蒸发温度将晶片温度调节到高水平。 此外，采用薄壁圆柱形制冷剂流动路径，使得薄壁圆筒仅由制冷剂压力略微变形。

    Plasma processing apparatus and maintenance method therefor
    57.
    发明授权
    Plasma processing apparatus and maintenance method therefor 有权
    等离子体处理装置及其维护方法

    公开(公告)号：US08833089B2

    公开(公告)日：2014-09-16

    申请号：US12538986

    申请日：2009-08-11

    申请人： Takumi Tandou ,  Masaru Izawa

    发明人： Takumi Tandou ,  Masaru Izawa

    IPC分类号： F25B9/00 ,  F25B45/00 ,  H01J37/32

    CPC分类号： H01J37/32091 ,  F25B45/00 ,  F25B2500/06 ,  H01J2237/2001

    摘要： In a plasma processing apparatus, a check valve is installed close to a refrigerant inlet of a compressor. When performing maintenance of a sample stage, refrigerant collected from a refrigerant flow path is temporarily stored in a flow path section extending from an expansion valve to the check valve, making it possible to perform the maintenance without changing the amount of refrigerant in the refrigerating cycle. With a refrigerant storage tank, a refrigerant supply valve, and a refrigerant discharge valve included in the refrigerating cycle, when maintenance of the compressor, a condenser, or the expansion valve is performed, the refrigerant collected from the refrigerating cycle can be put in use again.

    摘要翻译： 在等离子体处理装置中，止回阀安装在压缩机的制冷剂入口附近。 在对样品台进行维护时，从制冷剂流路收集的制冷剂暂时存储在从膨胀阀向止回阀延伸的流路部中，能够不改变制冷循环中的制冷剂量而进行维护 。 在冷冻循环中包括的制冷剂储存箱，制冷剂供给阀和制冷剂排出阀中，当执行压缩机，冷凝器或膨胀阀的维护时，可以使用从制冷循环中收集的制冷剂 再次。

    Chemical conversion treatment liquid
    58.
    发明授权
    Chemical conversion treatment liquid 有权
    化学转化处理液

    公开(公告)号：US08333847B2

    公开(公告)日：2012-12-18

    申请号：US13039656

    申请日：2011-03-03

    申请人： Masaru Izawa ,  Kunio Goto

    发明人： Masaru Izawa ,  Kunio Goto

    IPC分类号： C23C22/18 ,  C23C22/12

    CPC分类号： C23C22/08 ,  C23C22/00 ,  C23C22/12 ,  C23C22/18 ,  Y10T428/13 ,  Y10T428/264 ,  Y10T428/265

    摘要： A chemical conversion treatment liquid which can stably form a phosphate-type chemical conversion film on a steel material for a joint portion of an oil well steel pipe containing 0.5-13% Cr is developed.Using a chemical conversion treatment liquid to which a prescribed amount of potassium is added, a chemical conversion film containing a prescribed amount of potassium compounds and having a prescribed thickness can be formed on the threaded surface of a joint portion of an oil well steel pipe.

    摘要翻译： 开发了可以在含有0.5-13％Cr的油井钢管的接头部分的钢材上稳定地形成磷酸酯型化学转化膜的化学转化处理液。 使用含有规定量的钾的化学转化处理液，能够在油井钢管的接合部的螺纹面上形成含有规定量的钾化合物并具有规定厚度的化学转化膜。

    Vacuum Processing Apparatus And Plasma Processing Apparatus With Temperature Control Function For Wafer Stage
    59.
    发明申请
    Vacuum Processing Apparatus And Plasma Processing Apparatus With Temperature Control Function For Wafer Stage 审中-公开
    具有晶片级温度控制功能的真空处理装置和等离子体处理装置

    公开(公告)号：US20120273132A1

    公开(公告)日：2012-11-01

    申请号：US13546071

    申请日：2012-07-11

    申请人： Takumi Tandou ,  Masaru Izawa

    发明人： Takumi Tandou ,  Masaru Izawa

    IPC分类号： H05H1/24 ,  B44C1/22

    CPC分类号： H01L21/67109 ,  H01L21/67017

    摘要： A plasma processing apparatus includes a processing chamber, a wafer table, a refrigerant passage disposed inside the wafer table in which a refrigerant flows, a refrigeration cycle comprising the refrigerant passage in the wafer table as a first evaporator in which the refrigerant is evaporated as a result of a heat-exchange therein, a compressor, a condenser and an expansion valve, a second evaporator, and a controlling unit which adjusts a number of rotations of the compressor based upon a degree of dryness of the refrigerant at a position on the refrigeration cycle after passing through the first evaporation in a range in which dry-out does not occur in the first evaporator, and the dryness of the refrigerant being determined based upon an amount of a heat exchange during the evaporation of the refrigerant in the second evaporator.

    摘要翻译： 等离子体处理装置包括处理室，晶片台，布置在制冷剂流动的晶片台内部的制冷剂通道，制冷循环，其包括作为制冷剂蒸发的第一蒸发器的晶片台中的制冷剂通路， 其中热交换的结果，压缩机，冷凝器和膨胀阀，第二蒸发器和控制单元，其基于制冷剂位置上的制冷剂的干燥程度来调节压缩机的转数 在第一蒸发器中不发生干燥的范围内经过第一蒸发之后的循环，并且基于在第二蒸发器中的制冷剂的蒸发期间的热交换量来确定制冷剂的干燥度。