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1.发明授权公开(公告)号：US08029874B2
公开(公告)日：2011-10-04
申请号：US12035759
申请日：2008-02-22
IPC分类号： H05H1/24
CPC分类号： C23C16/4401
摘要： In a plasma processing apparatus provided with control means, gas supply means includes a first gas supply path for supplying a vent gas into a processing chamber by way of a shower plate and a second gas supply path for supplying a vent gas into the processing chamber without via the shower plate, and the control means is capable of adjusting a flow rate of the vent gas of at least one of the first and second gas supply paths in such a manner that a pressure on a back side of the shower plate becomes a pressure that is a positive pressure relative to a pressure in the processing chamber and less than a withstand pressure of the shower plate.
摘要翻译： 在设置有控制装置的等离子体处理装置中，气体供给装置包括用于通过淋浴板将排放气体供给到处理室中的第一气体供给路径和用于将排出气体供给到处理室中的第二气体供给路径， 并且控制装置能够调节第一和第二气体供给路径中的至少一个的排出气体的流量，使得淋浴板的背侧的压力成为压力 这是相对于处理室中的压力的正压力并且小于喷淋板的耐受压力。
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2.发明申请Semiconductor Device Manufacturing Apparatus Capable Of Reducing Particle Contamination 审中-公开具有降低粒子污染的半导体器件制造装置公开(公告)号：US20110100555A1
公开(公告)日：2011-05-05
申请号：US12987448
申请日：2011-01-10
IPC分类号： C23F1/08 , C23C16/455 , C23C16/52 , C23C16/44
CPC分类号： C23C16/4401 , H01J37/32091 , H01J37/32678 , H01J2237/022
摘要： A semiconductor device manufacturing apparatus includes a process chamber, a conveyance chamber, a conveyance robot, a lock chamber, and a heating unit or temperature adjusting unit for reducing adherence of particles onto a substance to be processed by a thermo-phoretic force. The heating unit enables control of a temperature of the substance to be processed to be higher than a temperature of an inner wall or structural body of the process chamber or the conveyance chamber or the conveyance robot or the lock chamber, in conveying the substance to be processed. The temperature adjusting unit enables adjustment of a temperature of an inner wall or structural body of the process chamber or the conveyance chamber or the lock chamber to be lower than a temperature of the substance to be processed, in conveying the substance to be processed.
摘要翻译： 半导体器件制造装置包括处理室，输送室，输送机器人，锁定室以及加热单元或温度调节单元，用于减少通过热电解力将颗粒附着到被处理物质上。 加热单元能够将被处理物质的温度控制为高于处理室或输送室或输送机器人或锁定室的内壁或结构体的温度，将物质输送为 处理。 温度调节单元能够在输送待处理物质时将处理室或输送室或锁定室的内壁或结构体的温度调节为低于待处理物质的温度。
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公开(公告)号：US20090250000A1
公开(公告)日：2009-10-08
申请号：US12193815
申请日：2008-08-19
CPC分类号： H01L21/67201 , Y10T137/85986
摘要： A vacuum processing apparatus capable of attaining compatibility between the decrease for the number of foreign particles deposited on a sample in a lock chamber and improvement of the throughput, in which an open speed controllable valve is disposed and the depressurization speed can be controlled automatically by a controlling computer.
摘要翻译： 一种真空处理装置，其能够获得在锁定室中沉积在样品上的异物的数量的减少与提高打开速度可控阀的通过量之间的相容性，并且可以通过以下步骤自动控制减压速度 控制电脑。
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公开(公告)号：US20080277061A1
公开(公告)日：2008-11-13
申请号：US11835463
申请日：2007-08-08
IPC分类号： H01L21/306 , G06F19/00
CPC分类号： H01L21/02087 , B08B7/0042 , H01L21/67028
摘要： An object of the present invention is to provide a wafer edge cleaner which is capable of removing an undesired material that adheres to an outer periphery of an object to be processed at the low costs and with high throughput. The wafer edge cleaner according to the present invention irradiates a deposited material that has adhered to the rear surface outer periphery of the object to be processed with a laser beam that is at least 30 kW/mm2 in the peak power density.
摘要翻译： 本发明的目的是提供一种晶片边缘清洁器，其能够以低成本和高产量去除附着在被处理物体的外周的不需要的材料。 根据本发明的晶片边缘清洁器用在其中的至少30kW / mm 2的激光束照射附着在待处理物体的后表面外周的沉积材料 峰值功率密度。
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公开(公告)号：US20060254717A1
公开(公告)日：2006-11-16
申请号：US11213737
申请日：2005-08-30
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01J37/32642 , C23F4/00 , H01J37/32009 , H01J37/32532 , H01L21/02087 , H01L21/67109 , H01L21/6831 , H01L21/68707 , H01L21/68742
摘要： A plasma processing apparatus includes a vacuum processing chamber, supplying means for introducing a processing gas into the vacuum processing chamber, a mounting electrode in the vacuum processing chamber for mounting a specimen on the mounting electrode, and a pusher pin for raising the specimen placed on the mounting electrode and holding the specimen over the mounting electrode, wherein the mounting electrode includes an inner area for mounting the specimen, an outer area for mounting a focus ring, and a high-frequency power source for supplying electric power to the inner area and the outer area, and wherein high-frequency electric power is applied to the outer area to generate plasma at the outer edge of the backside of the specimen while the specimen is raised with the pusher pin.
摘要翻译： 等离子体处理装置包括真空处理室，将处理气体导入真空处理室的供给单元，将真空室内的试样安装在真空处理室内的安装电极，以及将试样放置在 所述安装电极将所述试样保持在所述安装电极上，其中所述安装电极包括用于安装所述试样的内部区域，用于安装聚焦环的外部区域和用于向所述内部区域供电的高频电源， 外部区域，并且其中高频电力施加到外部区域，以在样本被推动销升高的同时在试样的背面的外边缘处产生等离子体。
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公开(公告)号：US09150964B2
公开(公告)日：2015-10-06
申请号：US12191373
申请日：2008-08-14
IPC分类号： C23C14/00 , C23C16/44 , H01L21/67 , H01L21/677
CPC分类号： C23C16/4401 , H01L21/67201 , H01L21/67745
摘要： There is a vacuum processing apparatus which can reduce the amount of foreign particle occurrence by enhancing the ease of maintenance of a gas diffuser installing portion in the vacuum processing apparatus. A gas diffuser chamber for accommodating a gas diffuser is installed in the vacuum processing apparatus.
摘要翻译： 通过增加真空处理装置中的气体扩散器安装部的维护的便利，可以减少异物发生量。 用于容纳气体扩散器的气体扩散室安装在真空处理装置中。
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公开(公告)号：US07662232B2
公开(公告)日：2010-02-16
申请号：US11730962
申请日：2007-04-05
CPC分类号： H01J37/32449 , C23C16/455 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , H01J37/32082 , H01J37/3244 , H01L21/3065 , Y10T137/0402
摘要： The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.
摘要翻译： 本发明的目的是提供具有增强的等离子体处理均匀性的等离子体处理装置。 等离子体处理装置包括处理室1，用于将处理气体供给到处理室中的装置13和14，用于对处理室1进行减压的抽空装置25和26，其上待处理物体2如晶片的电极4 以及电磁辐射电源5A，其中通过不同的气体入口将具有不同组成比的O 2或N 2的至少两种处理气体引入处理室，以便控制临界尺寸的面内均匀性 同时保持工艺深度的面内均匀性。
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8.发明申请公开(公告)号：US20090183683A1
公开(公告)日：2009-07-23
申请号：US12035759
申请日：2008-02-22
IPC分类号： C23C16/455 , B05C11/02 , B05C9/00 , H01L21/306
CPC分类号： C23C16/4401
摘要： In a plasma processing apparatus provided with control means, gas supply means includes a first gas supply path for supplying a vent gas into a processing chamber by way of a shower plate and a second gas supply path for supplying a vent gas into the processing chamber without via the shower plate, and the control means is capable of adjusting a flow rate of the vent gas of at least one of the first and second gas supply paths in such a manner that a pressure on a back side of the shower plate becomes a pressure that is a positive pressure relative to a pressure in the processing chamber and less than a withstand pressure of the shower plate.
摘要翻译： 在设置有控制装置的等离子体处理装置中，气体供给装置包括用于通过淋浴板将排放气体供给到处理室中的第一气体供给路径和用于将排出气体供给到处理室中的第二气体供给路径， 并且控制装置能够调节第一和第二气体供给路径中的至少一个的排出气体的流量，使得喷淋板的背侧的压力成为压力 这是相对于处理室中的压力的正压力并且小于喷淋板的耐受压力。
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公开(公告)号：US20080308134A1
公开(公告)日：2008-12-18
申请号：US11850154
申请日：2007-09-05
IPC分类号： B08B3/00
CPC分类号： B08B7/0035 , H01L21/67069 , H01L21/6708
摘要： The invention provides a substrate processing apparatus capable of removing unnecessary deposition films attached to a bevel portion of a substrate to be processed with high efficiency and at low cost without causing damage to the inner areas of the substrate to be processed having patterns formed thereto and without causing heavy metal contamination. The substrate processing apparatus comprises a rotary stage 1 on which a substrate 2 to be processed is placed having a smaller diameter than the diameter of the substrate 2, a gas supply structure unit 3 disposed above the substrate 2 to be processed for forming a gas flow for protecting a pattern formed on an upper surface of the substrate to be processed, a first gas supply system 11 for supplying nonreactive gas to the gas supply structure unit 3, an atmospheric pressure microplasma source 4 having a nozzle for supplying radicals for removing unnecessary deposits on an outer circumference portion of the substrate to be processed, a second gas supply system 14 for supplying gas to the atmospheric pressure microplasma source 4, a high frequency power supply 13 for supplying power to the atmospheric pressure microplasma source 4, and a vacuum means 5 for vacuuming and removing reaction products from the outer circumference portion of the substrate 2 to be processed.
摘要翻译： 本发明提供了一种基板处理装置，其能够以高效率和低成本地去除附着在待处理基板的斜面部分上的不必要的沉积膜，而不会对被加工的基板的内部区域造成损害，所述内部区域形成有图案并且没有 造成重金属污染。 基板处理装置包括：旋转台1，其上放置直径小于基板2的直径的待加工基板2;气体供给结构单元3，设置在待加工基板2的上方，用于形成气流 用于保护形成在待处理基板的上表面上的图案，用于向气体供应结构单元3供应非反应性气体的第一气体供应系统11，具有用于提供自由基的喷嘴以除去不需要的沉积物的大气压微量源4 在待处理基板的外周部分上设置用于向大气压原子源4供给气体的第二气体供给系统14，向大气压等离子体源4供电的高频电源13，以及真空装置 5，用于对待处理的基板2的外周部分进行真空和去除反应产物。
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公开(公告)号：US20080236748A1
公开(公告)日：2008-10-02
申请号：US11835449
申请日：2007-08-08
IPC分类号： H01L21/306
CPC分类号： H01J37/32935 , H01J37/32522 , H01J37/32623 , H01J37/32642 , H01J37/32954 , H01J37/32972
摘要： In a plasma processing apparatus including a processing chamber, a high-frequency power supply needed for plasma production, a unit that feeds a gas to the processing chamber, a shower plate, an exhausting unit that depressurizes the processing chamber, a stage on which a sample to be processed is placed, and a focus ring, the temperature of the focus ring can be regulated. A unit that measures a gas temperature distribution in the processing chamber is included. Based on the result of measurement of the gas temperature distribution, the temperature of the focus ring is controlled so that the gas temperature in the surface of the sample to be processed will be uniform.
摘要翻译： 在包括处理室，等离子体生产所需的高频电源，向处理室供给气体的单元，喷淋板，对处理室进行减压的排气单元的等离子体处理装置中， 放置待处理的样品和聚焦环，可以调节聚焦环的温度。 包括测量处理室中的气体温度分布的单元。 基于气体温度分布的测量结果，控制聚焦环的温度，使待处理样品的表面中的气体温度均匀。
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