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174 条记录 (耗时 0.037 秒)

    Self-alignment scheme for enhancement of CPP-GMR
    51.
    发明授权
    Self-alignment scheme for enhancement of CPP-GMR 失效
    用于增强CPP-GMR的自对准方案

    公开(公告)号：US07118680B2

    公开(公告)日：2006-10-10

    申请号：US10718372

    申请日：2003-11-20

    申请人： Jei-Wei Chang ,  Chao-Peng Chen ,  Min Li ,  Kochan Ju

    发明人： Jei-Wei Chang ,  Chao-Peng Chen ,  Min Li ,  Kochan Ju

    IPC分类号： G11B5/39

    CPC分类号： G11B5/1278 ,  Y10T29/49052

    摘要： A method for fabricating a current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type is provided, the method including an electron-beam lithographic process employing both primary and secondary electron absorption and first and second self-aligned lift-off processes for patterning the capped ferromagnetic free layer and the conducting, non-magnetic spacer layer. The sensor so fabricated has reduced resistance and increased sensitivity.

    摘要翻译： 提供了一种用于制造合成自旋阀类型的电流垂直平面（CPP）巨磁阻（GMR）传感器的方法，该方法包括采用初级和次级电子吸收的电子束光刻工艺，第一和第二 用于对封装的铁磁自由层和导电的非磁性间隔层进行图案化的自对准剥离工艺。 所制造的传感器具有降低的电阻和增加的灵敏度。

    Magnetic random access memory with memory cell stacks having more than two magnetic states
    53.
    发明申请
    Magnetic random access memory with memory cell stacks having more than two magnetic states 有权
    具有多于两个磁状态的存储单元堆的磁性随机存取存储器

    公开(公告)号：US20060171199A1

    公开(公告)日：2006-08-03

    申请号：US11048377

    申请日：2005-02-01

    申请人： Kochan Ju

    发明人： Kochan Ju

    IPC分类号： G11C11/14

    CPC分类号： G11C11/16 ,  G11C11/5607

    摘要： A magnetic random access memory (MRAM) has memory units or stacks of multiple memory cells arranged in the X-Y plane on the MRAM substrate with each memory unit having four possible magnetic states. Each memory unit is located at an intersection region between two orthogonal write lines and has two stacked memory cells. The two cells are magnetically separated from each other by a separation layer and have the easy axes of magnetization of their free ferromagnetic layers aligned substantially orthogonal to one another. The application of write-current pulses of equal magnitude and the appropriate direction through the orthogonal write lines above and below the memory units can generate each of the four magnetic states which can be detected as four independent logical states.

    摘要翻译： 磁性随机存取存储器（MRAM）具有布置在MRAM衬底上的X-Y平面中的多个存储单元的存储器单元或堆叠，每个存储器单元具有四个可能的磁状态。 每个存储器单元位于两个正交写入线之间的交叉区域，并且具有两个堆叠的存储器单元。 两个电池通过分离层彼此磁性分离，并且其自由铁磁层的易磁化轴基本上彼此正交排列。 通过在存储器单元上方和下方的正交写入线，施加相等幅度的写入电流脉冲和适当的方向，可以产生可以被检测为四个独立逻辑状态的四个磁状态中的每一个。

    Magnetic random access memory with stacked memory layers having access lines for writing and reading
    54.
    发明授权
    Magnetic random access memory with stacked memory layers having access lines for writing and reading 有权
    具有堆叠存储层的磁性随机存取存储器具有用于写入和读取的访问线

    公开(公告)号：US07075818B2

    公开(公告)日：2006-07-11

    申请号：US10924360

    申请日：2004-08-23

    申请人： Kochan Ju

    发明人： Kochan Ju

    IPC分类号： G11C11/00

    CPC分类号： G11C11/16 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659

    摘要： A multiple-memory-layer magnetic random access memory (MRAM) has multiple memory layers arranged as pairs and stacked on a substrate. The first memory layer in the pair comprises a plurality of rows of memory cells located between electrically conductive access lines, and the second memory layer in the pair is substantially identical to the first memory layer, but is rotated about an axis perpendicular to the substrate so that the access lines and memory cell rows in one memory layer of the pair are orthogonal to their counterpart lines and rows in the other memory layer. The memory cells in each layer are aligned vertically (perpendicular to the substrate) with the memory cells in the other layer, with the vertically aligned memory cells forming memory cell columns that extend perpendicularly from the substrate. Each memory cell column has an electrical switch between the lowermost memory cell and the substrate.

    摘要翻译： 多存储层磁随机存取存储器（MRAM）具有多个存储层，它们成对配置并堆叠在衬底上。 该对中的第一存储层包括位于导电接入线之间的多行存储单元，并且该对中的第二存储层基本上与第一存储层相同，而是围绕垂直于衬底的轴线旋转，因此 该对的一个存储器层中的访问线和存储单元行与其对应的行和另一个存储层中的行正交。 每个层中的存储单元垂直（垂直于衬底）与另一层中的存储器单元对准，垂直排列的存储单元形成从衬底垂直延伸的存储单元列。 每个存储单元列在最下面的存储单元和衬底之间具有电开关。

    Fully shielded perpendicular recoding writer
    55.
    发明授权
    Fully shielded perpendicular recoding writer 有权
    完全屏蔽的垂直记录器

    公开(公告)号：US07042682B2

    公开(公告)日：2006-05-09

    申请号：US10688046

    申请日：2003-10-17

    申请人： Hung Liang Hu ,  Yaw Shing Tang ,  Liji Guan ,  Kochan Ju

    发明人： Hung Liang Hu ,  Yaw Shing Tang ,  Liji Guan ,  Kochan Ju

    IPC分类号： G11B5/127

    CPC分类号： G11B5/1278 ,  G11B5/11 ,  G11B5/127 ,  G11B5/3116 ,  G11B5/3146 ,  G11B5/315

    摘要： Conventional perpendicular writers that utilize an extended return pole are subject to large flux leakage. This problem has been reduced in the prior art by adding a downstream shield. This still leaves significant upstream leakage. This has now been eliminated by adding an upstream shield and then connecting the up and downstream shields by using side shields. The latter need not extend all the way from the downstream to the upstream shield in which case their thickness is increased relative to the full side shields.

    摘要翻译： 使用扩展返回极的常规垂直写入器会受到大的漏磁。 通过添加下游屏蔽，现有技术中已经减少了这个问题。 这仍然导致重大的上游泄漏。 现在已经通过添加上游屏蔽，然后通过使用侧屏蔽连接上下屏蔽来消除这一点。 后者不需要从下游延伸到上游屏蔽，在这种情况下，它们的厚度相对于全侧屏蔽增加。

    Method of increasing CPP GMR in a spin valve structure
    56.
    发明授权
    Method of increasing CPP GMR in a spin valve structure 有权
    在自旋阀结构中增加CPP GMR的方法

    公开(公告)号：US07016168B2

    公开(公告)日：2006-03-21

    申请号：US10718373

    申请日：2003-11-20

    申请人： Min Li ,  Kochan Ju ,  Youfeng Zheng ,  Simon Liao ,  Jeiwei Chang

    发明人： Min Li ,  Kochan Ju ,  Youfeng Zheng ,  Simon Liao ,  Jeiwei Chang

    IPC分类号： G11B5/39

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3906 ,  G11B2005/3996

    摘要： A current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type is provided, the sensor comprising a GMR stack having a substantially square lateral cross-section, a Cu spacer layer of smaller square cross-section formed centrally on the GMR stack and a capped ferromagnetic free layer of substantially square, but even smaller cross-sectional area, formed centrally on the spacer layer. The stepped, reduced area geometry of the sensor provides a significant improvement in its GMR ratio (DR/R), a reduced resistance, R, and elimination of Joule heating hot-spots in regions of high resistance such as the antiferromagnetic pinning layer and its seed layer.

    摘要翻译： 提供合成自旋阀类型的电流垂直平面（CPP）巨磁阻（GMR）传感器，该传感器包括具有基本正方形横截面的GMR叠层，较小方形截面的Cu间隔层， 在GMR堆叠上形成中心的截面，以及在间隔层中央形成基本上正方形，但是更小的横截面积的封盖铁磁自由层。 传感器的阶梯式减小的面积几何形状提供了其GMR比（DR / R），电阻降低，R和消除高电阻区域中的焦耳加热热点的显着改进，例如反铁磁钉扎层及其 种子层。

    Synthetic free layer for CPP GMR
    58.
    发明申请
    Synthetic free layer for CPP GMR 失效

    公开(公告)号：US20060007608A1

    公开(公告)日：2006-01-12

    申请号：US11229155

    申请日：2005-09-16

    申请人： Min Li ,  Simon Liao ,  Kochan Ju

    发明人： Min Li ,  Simon Liao ,  Kochan Ju

    IPC分类号： G11B5/127 ,  G11B5/33

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3272 ,  H01F41/302 ,  H01L43/10

    摘要： Reduction of the free layer thickness in GMR devices is desirable in order to meet higher signal requirements, besides improving the GMR ratio itself. However, thinning of the free layer reduces the GMR ratio and leads to poor thermal stability. This problem has been overcome by making AP2 from an inverse GMR material and by changing the free layer from a single uniform layer to a ferromagnetic layer AFM (antiferromagnetically) coupled to a layer of inverse GMR material. Examples of alloys that may be used for the inverse GMR materials include FeCr, NiFeCr, NiCr, CoCr, CoFeCr, and CoFeV. Additionally, the ruthenium layer normally used to effect antiferromagnetic coupling can be replaced by a layer of chromium. A process to manufacture the structure is also described.