Multiple exposure photolithography methods and photoresist compositions
    51.
    发明授权
    Multiple exposure photolithography methods and photoresist compositions 有权
    多重曝光光刻方法和光致抗蚀剂组合物

    公开(公告)号:US08236476B2

    公开(公告)日:2012-08-07

    申请号:US11970761

    申请日:2008-01-08

    IPC分类号: G03F7/004 G03F7/028

    摘要: A method and a composition are provided. The composition includes a polymer and a photosensitive acid generator capable of generating a first amount of acid upon exposure to a first dose of radiation and a second amount of acid upon exposure to a second dose of radiation. The second amount of acid is greater than said first amount of acid. The second dose is greater than the first dose. The composition includes a photosensitive base generator capable of generating a first amount of base upon exposure to the first dose and a second amount of base upon exposure to the second dose, where the first amount of base is greater than the first amount of acid and the second amount of base is less than the second amount of acid. A method for exposing to radiation a film of a photoresist on a substrate is included.

    摘要翻译: 提供了一种方法和组合物。 组合物包括聚合物和感光酸产生剂,其能够在暴露于第一剂量的辐射时产生第一量的酸,并且在暴露于第二剂量的辐射时能够产生第二量的酸。 第二量的酸大于所述第一量的酸。 第二剂量大于第一剂量。 所述组合物包括能够在暴露于第一剂量时产生第一量碱的光敏碱产生剂,以及暴露于第二剂量时第二量的碱,其中第一量的碱大于第一量的酸, 碱的第二量少于第二量的酸。 包括用于在基板上暴露于光致抗蚀剂的膜的方法。

    Approach to formulating irradiation sensitive positive resists
    52.
    发明授权
    Approach to formulating irradiation sensitive positive resists 失效
    制定辐射敏感阳性抗蚀剂的方法

    公开(公告)号:US06268436B1

    公开(公告)日:2001-07-31

    申请号:US09473225

    申请日:1999-12-27

    IPC分类号: C08L6500

    摘要: The present invention is directed to a high-performance irradiation sensitive positive-tone resist and to a method of formulating the same. In one aspect, the polymer resin composition of the present invention comprises a blend of at least two miscible aqueous base soluble polymer resins, wherein one of said aqueous base soluble polymer resins of said blend is partially protected with a high activation energy protecting group and the other aqueous base soluble polymer resin of said blend is partially protected with a low activation energy protecting group. A chemically amplified resist system comprising said polymer resin composition; at least one acid generator; and a solvent is also provided herein.

    摘要翻译: 本发明涉及一种高性能照射敏感正性抗蚀剂及其制备方法。 一方面,本发明的聚合物树脂组合物包含至少两种可混溶的水溶性可溶性聚合物树脂的共混物,其中所述共混物的所述水溶性基础可溶性聚合物树脂之一部分地被高活化能保护基团保护,并且 所述共混物的其它水溶性可溶性聚合物树脂部分地被低活化能保护基团保护。 一种包含所述聚合物树脂组合物的化学放大抗蚀剂体系; 至少一种酸发生剂; 并且还提供了溶剂。

    Optimization of space width for hybrid photoresist
    53.
    发明授权
    Optimization of space width for hybrid photoresist 失效
    混合光刻胶的空间宽度优化

    公开(公告)号:US06200726B1

    公开(公告)日:2001-03-13

    申请号:US09170756

    申请日:1998-10-13

    IPC分类号: G03C173

    摘要: A photo resist composition contains at least one photoacid generator (PAG), wherein at least two photoacids are produced upon exposure of the photo resist to actinic energy and wherein the photo resist is capable of producing a hybrid response. The function of providing generation of two photoacids in a hybrid resist is to optimize the use of hybrid resist by varying the hybrid space width. The at least two photoacids may differ in their effectiveness at catalyzing at least one mechanism of the hybrid response. In particular, one photoacid may be a weaker acid and another may be a stronger acid, wherein there exists a difference of at least four orders of magnitude between the acid dissociation constant (Ka) of the weaker acid and the stronger acid. A method for optimizing space width in a hybrid photo resist includes the steps of: 1) selecting a desired space width; 2) selecting at least one photoacid generator (PAG), wherein at least two photoacids will be produced upon exposure to actinic energy in relative proportions sufficient to produce the desired space width in the hybrid photo resist; and 3) forming a hybrid photo resist composition comprising the at least one PAG. The step of selecting at least one PAG may include first determining the space width produced alone by each photoacid in a group of candidate photoacids and then selecting the photoacids and corresponding at least one PAG that will produce the desired space width.

    摘要翻译: 光致抗蚀剂组合物含有至少一种光致酸发生剂(PAG),其中当光致抗蚀剂暴露于光化能时,产生至少两种光酸,并且其中光致抗蚀剂能产生杂化响应。 在混合抗蚀剂中提供两种光酸的产生的功能是通过改变混合空间宽度来优化混合抗蚀剂的使用。 至少两种光酸在催化至少一种混合反应机制方面的有效性可能不同。 特别地,一种光致酸可以是较弱的酸,而另一种可能是较强的酸,其中在较弱酸的酸解离常数(Ka)和较强酸之间存在至少四个数量级的差异。 一种用于优化混合光刻胶中的空间宽度的方法包括以下步骤:1)选择期望的空间宽度; 2)选择至少一种光致酸产生剂(PAG),其中当以相对比例暴露于足以产生混合光致抗蚀剂中所需空间宽度的光化能时,将产生至少两种光酸; 和3)形成包含所述至少一种PAG的混合光刻胶组合物。 选择至少一个PAG的步骤可以包括首先确定由一组候选光酸中的每个光酸酸单独产生的空间宽度,然后选择将产生所需空间宽度的光酸和相应的至少一个PAG。

    PHOTORESIST COMPOSITIONS
    54.
    发明申请
    PHOTORESIST COMPOSITIONS 有权
    光电组合物

    公开(公告)号:US20120214099A1

    公开(公告)日:2012-08-23

    申请号:US13461960

    申请日:2012-05-02

    摘要: A composition. The composition includes a polymer and a photosensitive acid generator capable of generating a first amount of acid upon exposure to a first dose of radiation and a second amount of acid upon exposure to a second dose of radiation. The second amount of acid is greater than the first amount of acid. The second dose is greater than the first dose. The composition includes a photosensitive base generator capable of generating a first amount of base upon exposure to the first dose and a second amount of base upon exposure to the second dose, where the first amount of base is greater than the first amount of acid and the second amount of base is less than the second amount of acid. The photosensitive base generator may include benzoin carbamates, O-carbamoylhydroxylamines, O-carbamoyloximes, aromatic sulfonamides, α-lactones, N-(2-Arylethenyl)amides, azides, amides, oximines, quaternary ammonium salts, or amineimides.

    摘要翻译: 一个组成 组合物包括聚合物和感光酸产生剂,其能够在暴露于第一剂量的辐射时产生第一量的酸,并且在暴露于第二剂量的辐射时能够产生第二量的酸。 第二量的酸大于第一量的酸。 第二剂量大于第一剂量。 所述组合物包括能够在暴露于第一剂量时产生第一量碱的光敏碱产生剂,以及暴露于第二剂量时第二量的碱,其中第一量的碱大于第一量的酸, 碱的第二量少于第二量的酸。 光敏碱产生剂可以包括安息香氨基甲酸酯,O-氨基甲酰羟基胺,O-氨基甲酰肟,芳族磺酰胺,α-内酯,N-(2-羟乙基)酰胺,叠氮化物,酰胺,肟,季铵盐或胺酰胺。

    MULTIPLE EXPOSURE PHOTOLITHOGRAPHY METHODS AND PHOTORESIST COMPOSTIONS
    56.
    发明申请
    MULTIPLE EXPOSURE PHOTOLITHOGRAPHY METHODS AND PHOTORESIST COMPOSTIONS 有权
    多次曝光光刻方法和光电复合材料

    公开(公告)号:US20090176174A1

    公开(公告)日:2009-07-09

    申请号:US11970761

    申请日:2008-01-08

    IPC分类号: G03F7/004 G03F7/20

    摘要: A method and a composition. The composition includes a polymer and a photosensitive acid generator capable of generating a first amount of acid upon exposure to a first dose of radiation and a second amount of acid upon exposure to a second dose of radiation. The second amount of acid is greater than said first amount of acid. The second dose is greater than the first dose. The composition includes a photosensitive base generator capable of generating a first amount of base upon exposure to the first dose and a second amount of base upon exposure to the second dose, where the first amount of base is greater than the first amount of acid and the second amount of base is less than the second amount of acid. A method for exposing to radiation a film of a photoresist on a substrate is included.

    摘要翻译: 方法和组成。 组合物包括聚合物和感光酸产生剂,其能够在暴露于第一剂量的辐射时产生第一量的酸,并且在暴露于第二剂量的辐射时能够产生第二量的酸。 第二量的酸大于所述第一量的酸。 第二剂量大于第一剂量。 所述组合物包括能够在暴露于第一剂量时产生第一量碱的光敏碱产生剂,以及暴露于第二剂量时第二量的碱,其中第一量的碱大于第一量的酸, 碱的第二量少于第二量的酸。 包括用于在基板上暴露于光致抗蚀剂的膜的方法。

    Photoresist compositions
    57.
    发明授权
    Photoresist compositions 有权
    光刻胶组合物

    公开(公告)号:US08846296B2

    公开(公告)日:2014-09-30

    申请号:US13461960

    申请日:2012-05-02

    IPC分类号: G03F7/004 G03F7/028

    摘要: A composition is provided. The composition includes a polymer and a photosensitive acid generator capable of generating a first amount of acid upon exposure to a first dose of radiation and a second amount of acid upon exposure to a second dose of radiation. The second amount of acid is greater than the first amount of acid. The second dose is greater than the first dose. The composition includes a photosensitive base generator capable of generating a first amount of base upon exposure to the first dose and a second amount of base upon exposure to the second dose, where the first amount of base is greater than the first amount of acid and the second amount of base is less than the second amount of acid. The photosensitive base generator may include benzoin carbamates, O-carbamoylhydroxylamines, O-carbamoyloximes, aromatic sulfonamides, α-lactones, N-(2-Arylethenyl)amides, azides, amides, oximines, quaternary ammonium salts, or amineimides.

    摘要翻译: 提供了组合物。 组合物包括聚合物和感光酸产生剂,其能够在暴露于第一剂量的辐射时产生第一量的酸,并且在暴露于第二剂量的辐射时能够产生第二量的酸。 第二量的酸大于第一量的酸。 第二剂量大于第一剂量。 所述组合物包括能够在暴露于第一剂量时产生第一量碱的光敏碱产生剂,以及暴露于第二剂量时第二量的碱,其中第一量的碱大于第一量的酸, 碱的第二量少于第二量的酸。 光敏基底产生剂可以包括安息香氨基甲酸酯,O-氨基甲酰羟基胺,O-氨基甲酰肟,芳族磺酰胺,α-内酯,N-(2-亚乙烯基)酰胺,叠氮化物,酰胺,肟,季铵盐或胺酰胺。

    Developable bottom antireflective coating compositions for negative resists
    58.
    发明授权
    Developable bottom antireflective coating compositions for negative resists 有权
    用于负性抗蚀剂的可开发的底部抗反射涂料组合物

    公开(公告)号:US08715907B2

    公开(公告)日:2014-05-06

    申请号:US13206796

    申请日:2011-08-10

    IPC分类号: G03F7/09 G03F7/11 G03F7/30

    摘要: A negative developable bottom antireflective coating (NDBARC) material includes a polymer containing an aliphatic alcohol moiety, an aromatic moiety, and a carboxylic acid moiety. The NDBARC composition is insoluble in a typical resist solvent such as propylene glycol methyl ether acetate (PGMEA) after coating and baking. The NDBARC material also includes a photoacid generator, and optionally a crosslinking compound. In the NDBARC material, the carboxylic acid provides the developer solubility, while the alcohol alone, the carboxylic acid alone, or their combination provides the PGMEA resistance. The NDBARC material has resistance to the resist solvent, and thus, intermixing does not occur between NDBARC and resist during resist coating over NDBARC. After exposure and bake, the lithographically exposed portions of both the negative photoresist and the NDBARC layer become insoluble in developer due to the chemically amplified crosslinking of the polymers in negative resist and NDBARC layer in the lithographically exposed portions.

    摘要翻译: 负显影底部抗反射涂层(NDBARC)材料包括含有脂族醇部分,芳族部分和羧酸部分的聚合物。 NDBARC组合物在涂布和烘烤后不溶于典型的抗蚀剂溶剂如丙二醇甲基醚乙酸酯(PGMEA)。 NDBARC材料还包括光致酸发生剂和任选的交联化合物。 在NDBARC材料中,羧酸提供了显影剂的溶解度,而单独的醇,单独的羧酸或它们的组合提供了PGMEA的抗性。 NDBARC材料对抗蚀剂溶剂具有抗性,因此在NDBARC的抗蚀涂层期间,NDBARC和抗蚀剂之间不会发生混合。 在曝光和烘烤之后,由于在光刻曝光部分中的负光刻胶和NDBARC层中的聚合物的化学扩展交联,负光致抗蚀剂和NDBARC层的光刻曝光部分变得不溶于显影剂。

    DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITION AND PATTERN FORMING METHOD USING THEREOF
    59.
    发明申请
    DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITION AND PATTERN FORMING METHOD USING THEREOF 有权
    可开发的底部抗反射涂料组合物及其使用的图案形成方法

    公开(公告)号:US20140004712A1

    公开(公告)日:2014-01-02

    申请号:US13537177

    申请日:2012-06-29

    IPC分类号: G03F7/20 H01L21/265 C09K3/00

    摘要: The present invention relates to a developable bottom antireflective coating (BARC) composition and a pattern forming method using the BARC composition. The BARC composition includes a first polymer having a first carboxylic acid moiety, a hydroxy-containing alicyclic moiety, and a first chromophore moiety; a second polymer having a second carboxylic acid moiety, a hydroxy-containing acyclic moiety, and a second chromophore moiety; a crosslinking agent; and a radiation sensitive acid generator. The first and second chromophore moieties each absorb light at a wavelength from 100 nm to 400 nm. In the patterning forming method, a photoresist layer is formed over a BARC layer of the BARC composition. After exposure, unexposed regions of the photoresist layer and the BARC layer are selectively removed by a developer to form a patterned structure in the photoresist layer. The BARC composition and the pattern forming method are especially useful for implanting levels.

    摘要翻译: 本发明涉及一种可显影底部抗反射涂层(BARC)组合物和使用该BARC组合物的图案形成方法。 BARC组合物包括具有第一羧酸部分,含羟基脂环族部分和第一发色团部分的第一聚合物; 具有第二羧酸部分的第二聚合物,含羟基的无环部分和第二发色团部分; 交联剂; 和辐射敏感酸发生器。 第一和第二发色团部分各自吸收波长从100nm到400nm的光。 在图案形成方法中,在BARC组合物的BARC层上形成光致抗蚀剂层。 曝光后,通过显影剂选择性地除去光致抗蚀剂层和BARC层的未曝光区域,以在光致抗蚀剂层中形成图案化结构。 BARC组合物和图案形成方法对于植入水平特别有用。

    Multiple exposure photolithography methods
    60.
    发明授权
    Multiple exposure photolithography methods 有权
    多曝光光刻法

    公开(公告)号:US08568960B2

    公开(公告)日:2013-10-29

    申请号:US13418421

    申请日:2012-03-13

    IPC分类号: G03F7/26 G03F7/40

    摘要: A method that forms a film of photoresist composition on a substrate and exposes a first and second region of the film to radiation through a first and second mask having a first and second image pattern, respectively. The photoresist composition includes a polymer including labile group(s), base soluble group(s), a photosensitive acid generator, and a photosensitive base generator. The photosensitive acid generator generates first and second amounts of acid upon exposure to first and second doses of radiation, respectively. The second amount of acid exceeds the first amount of acid. The second dose of radiation exceeds the first dose of radiation. The photosensitive base generator generates a first and second amount of base upon exposure to the first and second dose of radiation, respectively. The first amount of base exceeds the first amount of acid. The second amount of acid exceeds the second amount of base.

    摘要翻译: 一种在衬底上形成光致抗蚀剂组合物的膜并将膜的第一和第二区分别暴露于具有第一和第二图像图案的第一和第二掩模的辐射的方法。 光致抗蚀剂组合物包括包含不稳定基团,碱溶性基团,光敏酸发生剂和感光基底发生剂的聚合物。 感光酸发生器分别在暴露于第一和第二剂量的辐射时产生第一和第二量的酸。 第二量的酸超过第一量的酸。 第二剂辐射超过第一剂量的辐射。 光敏底物发生器分别在暴露于第一和第二剂量的辐射时产生第一和第二量的碱。 碱的第一量超过第一量的酸。 第二量的酸超过第二量的碱。