利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

375 条记录 (耗时 0.029 秒)

    Thin film transistor having memory function and method for using thin film transistor as memory element
    51.
    发明授权
    Thin film transistor having memory function and method for using thin film transistor as memory element 失效
    具有记忆功能的薄膜晶体管和使用薄膜晶体管作为存储元件的方法

    公开(公告)号：US5196912A

    公开(公告)日：1993-03-23

    申请号：US668741

    申请日：1991-03-13

    申请人： Hiroshi Matsumoto ,  Hiroyasu Yamada ,  Nobuyuki Yamamura ,  Shinichi Shimomaki ,  Naohiro Konya ,  Kyuya Baba

    发明人： Hiroshi Matsumoto ,  Hiroyasu Yamada ,  Nobuyuki Yamamura ,  Shinichi Shimomaki ,  Naohiro Konya ,  Kyuya Baba

    IPC分类号： H01L27/115 ,  H01L29/792

    CPC分类号： H01L27/115 ,  H01L29/792

    摘要： A memory element is formed of a thin film transistor. The thin film transistor has a semiconductor layer, a source electrode electrically connected to the semiconductor layer, a drain electrode electrically connected to the semiconductor layer and formed separately from the source electrode, a gate electrode for controlling formation of a channel of the semiconductor layer, and a gate insulation film for isolating the gate electrode and the semiconductor layer from each other and causing a hysteresis in the relation between the drain current and the gate circuit. The insulation film is a silicon nitride film whose composition ratio of silicon to nitrogen is in a range of approx. 0.85 to 1.1. According to this invention, the relation between the gate voltage and the drain current can be set to have a hysteresis. Therefore, the thin film transistor can be used as a memory element. Further, according to this invention, data can be written, erased and read out by selectively applying an electric field to the gate insulation film. Therefore, the thin film transistor can be used as a memory element.

    摘要翻译： 存储元件由薄膜晶体管形成。 薄膜晶体管具有半导体层，与半导体层电连接的源电极，与半导体层电连接并与源极分开形成的漏电极，用于控制半导体层的沟道的形成的栅电极， 以及用于将栅极电极和半导体层彼此隔离并且在漏极电流和栅极电路之间的关系中产生滞后的栅极绝缘膜。 绝缘膜是硅与氮的组成比在大约的范围内的氮化硅膜。 0.85〜1.1。 根据本发明，可以将栅极电压和漏极电流之间的关系设定为滞后。 因此，薄膜晶体管可以用作存储元件。 此外，根据本发明，可以通过选择性地向栅极绝缘膜施加电场来写入，擦除和读出数据。 因此，薄膜晶体管可以用作存储元件。

    Movable table
    52.
    发明授权
    Movable table 失效
    可移动表

    公开(公告)号：US5163651A

    公开(公告)日：1992-11-17

    申请号：US667893

    申请日：1991-03-12

    申请人： Hiroshi Matsumoto

    发明人： Hiroshi Matsumoto

    IPC分类号： B23Q1/38 ,  B23Q1/48

    CPC分类号： B23Q1/38 ,  B23Q1/4866 ,  Y10S248/913

    摘要： A movable table has a movable platen, a flange member secured to the movable platen and a fixed platen sandwiched between the movable platen and the flange member. Thrust bearings are disposed between the fixed platen and the movable platen and between the fixed platen and the flange member. Drive units are coupled to the movable platen to move the movable platen along the thrust bearings. Instead of supporting the movable platen on the thrust bearings, it may be supported in a non-contact manner by blowing compressed air into clearances defined between the fixed platen and the movable platen and between the fixed platen and the flange member.

    摘要翻译： 可移动台具有可移动的压板，固定到可动压板的凸缘构件和夹在可动压板和凸缘构件之间的固定压板。 推力轴承设置在固定压板和可动压板之间以及固定压板和凸缘构件之间。 驱动单元联接到可动压板，以沿着推力轴承移动可动压板。 代替在推力轴承上支撑可动压板，可以通过将压缩空气吹送到限定在固定压板和可动压板之间以及固定压板和凸缘构件之间的间隙中而以非接触的方式支撑。

    Thin-film memory element
    55.
    发明授权
    Thin-film memory element 失效
    薄膜记忆元素

    公开(公告)号：US5079606A

    公开(公告)日：1992-01-07

    申请号：US467736

    申请日：1990-01-19

    申请人： Nobuyuki Yamamura ,  Shinichi Shimomaki ,  Hideaki Shimizu ,  Hiroshi Matsumoto ,  Naoki Kato

    发明人： Nobuyuki Yamamura ,  Shinichi Shimomaki ,  Hideaki Shimizu ,  Hiroshi Matsumoto ,  Naoki Kato

    IPC分类号： G11C16/04

    CPC分类号： G11C16/0466

    摘要： A thin-film memory element made by the technique of forming thin film and functioning as a thin-film transistor. The memory element has two gate-insulating films, and two gate electrodes formed on the gate-insulating films, respectively. The first gate-insulating film can accumulate electrical charge, whereas the second gate-insulating film cannot. The gate electrode on the first gate-insulating film is used as write/erase electrode, and the gate electrode on the second gate-insulating film is used as read electrode. Since the memory element has two electrodes, one for writing or erasing data, and the other for reading data, its threshold voltage remains unchanged. Hence, data can be read from the thin-film memory element for a virtually indefinitely long period of time.

    Light amount control apparatus
    56.
    发明授权
    Light amount control apparatus 失效
    光量控制装置

    公开(公告)号：US5065184A

    公开(公告)日：1991-11-12

    申请号：US373037

    申请日：1989-06-29

    申请人： Akiro Iimori ,  Hiroshi Matsumoto ,  Fumito Ide

    发明人： Akiro Iimori ,  Hiroshi Matsumoto ,  Fumito Ide

    IPC分类号： B41J2/44 ,  B41J2/45 ,  B41J2/455 ,  G03B27/72 ,  G03B27/80 ,  G03G15/04 ,  G03G15/043 ,  H04N1/04 ,  H04N1/23

    CPC分类号： G03G15/043 ,  G03B27/80

    摘要： A light amount control apparatus contains an exposure lamp, a photo sensor for receiving light from the lamp, an AC power source for applying an AC voltage to the lamp, a CPU for computing an electric power to be supplied to the exposure lamp in accordance with magnifications and optical densities of originals by using the data signal outputted from the photo sensor, a lamp regulator for control an electric power supplied to the exposure lamp by using a value computed by the CPU, and a zero-cross generator for causing the CPU to periodically perform the computation in synchronism with the AC voltage of AC power source applied to the lamp.

    摘要翻译： 光量控制装置包括曝光灯，用于接收来自灯的光的光传感器，用于向灯施加AC电压的AC电源，用于计算要提供给曝光灯的电力的CPU，根据 通过使用从光传感器输出的数据信号的原稿的放大率和光密度，用于通过使用由CPU计算的值来控制提供给曝光灯的电力的灯调节器;以及零交叉发生器，用于使CPU 与施加到灯的AC电源的AC电压同步地周期性地进行计算。

    Developer for positive type photoresists
    58.
    发明授权
    Developer for positive type photoresists 失效
    正型光刻胶的开发商

    公开(公告)号：US5030550A

    公开(公告)日：1991-07-09

    申请号：US333928

    申请日：1989-04-06

    申请人： Yasumasa Kawabe ,  Hiroshi Matsumoto ,  Tadayoshi Kokubo

    发明人： Yasumasa Kawabe ,  Hiroshi Matsumoto ,  Tadayoshi Kokubo

    IPC分类号： G03C1/72 ,  G03F7/32 ,  H01L21/027

    CPC分类号： G03F7/322

    摘要： A positive photoresist developer containing a basic compound and from 10 to 10,000 ppm of a non-ionic surfactant represented by formula (I): ##STR1## wherein X represents an oxyethylene group; Y represents an oxypropylene group; R represents hydrogen, an alkyl group containing from 1 to 8 carbon atoms, R', or ##STR2## R' represents --O--(X).sub.m (Y).sub.n --H; R" represents R' of an alkyl group containing l carbon atoms; m and n each is an integer from 1 to 50, provided that m:n is from 20:80 to 80:20; p is 0 or 1, and q and s each is o or an integer from 1 to 4, provided that p+q+s=4; and l is an integer from 1 to 4; and r is an integer from 1 to 8, provided that l+r is an integer of 9 or more. The developer has superior art in forming properties, and prevents film residues, surface layer peeling, and film reduction.

    摘要翻译： 含有碱性化合物的正性光致抗蚀剂显影剂和10〜10,000ppm由式（I）表示的非离子型表面活性剂：其中X表示氧化乙烯基; Y表示氧丙烯基; R表示氢，含有1至8个碳原子的烷基，R'或R'表示-O-（X）m（Y）n -H; R“表示含有1个碳原子的烷基的R'; m和n各自为1至50的整数，条件是m：n为20:80至80:20; p为0或1，q和s各自为o或1至4的整数，条件是p + q + s = 4; l为1〜4的整数， 并且r为1〜8的整数，条件是l + r为9以上的整数。 显影剂具有优异的成型性能，并且防止膜残留，表面层剥离和膜还原。