公开(公告)号：US06787829B2

公开(公告)日：2004-09-07

申请号：US09980633

申请日：2001-12-05

申请人： Tetsuo Fukami ,  Katsuhiko Kumagawa ,  Hiroyuki Yamakita ,  Masanori Kimura ,  Michiko Okafuji ,  Satoshi Asada

发明人： Tetsuo Fukami ,  Katsuhiko Kumagawa ,  Hiroyuki Yamakita ,  Masanori Kimura ,  Michiko Okafuji ,  Satoshi Asada

IPC分类号： H01L31062

CPC分类号： G02F1/134363 ,  G02F1/133512 ,  Y10S257/929

摘要： A liquid crystal display panel of the invention is such that, in a pixel region defined by a region of the array substrate surrounded by a pair of image signal lines and a pair of scanning signal lines, of a line-shaped pixel electrode and a common electrode, the electrode that is disposed adjacent to and parallel to a signal line is made of an opaque conductor and at least one of the other electrodes is made of a transparent conductor. Adverse effects of the electric field formed between a signal line and an adjacent electrode thereto are suppressed and a sufficient aperture ratio is ensured by using a transparent conductor for the electrode contributing good display.

摘要翻译： 本发明的液晶显示面板使得在由一对图像信号线和一对扫描信号线围绕的阵列基板的区域限定的像素区域中，线状像素电极和共同的 电极，与信号线相邻并平行配置的电极由不透明导体构成，其他电极中的至少一方由透明导体构成。 抑制在信号线和相邻电极之间形成的电场的不利影响，并且通过使用用于提供良好显示的电极的透明导体来确保足够的开口率。

公开(公告)号：US06670036B2

公开(公告)日：2003-12-30

申请号：US09287199

申请日：1999-04-06

申请人： Eiichi Iino ,  Masanori Kimura

发明人： Eiichi Iino ,  Masanori Kimura

IPC分类号： B32B516

CPC分类号： C30B29/06 ,  C30B15/36 ,  Y10S117/902 ,  Y10S117/911 ,  Y10S117/916 ,  Y10T428/2982

摘要： There are disclosed a silicon seed crystal which is composed of silicon single crystal and used for the Czochralski method, wherein oxygen concentration in the seed crystal is 15 ppma (JEIDA) or less, a silicon seed crystal which is used for the Czochralski method, wherein the silicon seed crystal does not have a straight body, and a method for producing a silicon single crystal by the Czochralski method comprising using said seed crystal, bringing a tip end of the seed crystal into contact with a silicon melt to melt the tip end of the seed crystal, with or without performing necking operation, and growing a silicon single crystal. The method is capable of improving the rate of success in making crystals dislocation-free and the productivity of single crystal rods regardless of the use of necking operation.

摘要翻译： 公开了由硅单晶构成并用于切克劳斯基法的硅晶种，其中晶种中的氧浓度为15ppma（JEIDA）以下，用于切克劳斯基法的硅晶种，其中 硅晶种不具有直体，并且通过切克劳斯基法生产硅单晶的方法包括使用所述晶种，使晶种的尖端与硅熔体接触以熔化晶体的末端 具有或不进行颈缩操作的晶种，并且生长硅单晶。该方法能够提高使晶体无位错的成功率和单晶棒的生产率，而不管使用颈缩操作。

公开(公告)号：US06600540B2

公开(公告)日：2003-07-29

申请号：US10160255

申请日：2002-06-04

申请人： Hiroyuki Yamakita ,  Akinori Shiota ,  Kenji Nakao ,  Daiichi Suzuki ,  Masanori Kimura ,  Yoshinori Tanaka

发明人： Hiroyuki Yamakita ,  Akinori Shiota ,  Kenji Nakao ,  Daiichi Suzuki ,  Masanori Kimura ,  Yoshinori Tanaka

IPC分类号： G02F11343

CPC分类号： G02F1/133707 ,  G02F1/134336 ,  G02F1/136213 ,  G02F1/1395 ,  G02F2201/122 ,  G02F2201/124 ,  G09G3/3648 ,  G09G2300/0486 ,  G09G2310/061

摘要： Disclosed is a liquid crystal display comprising: a pair of opposed substrates; a liquid crystal layer disposed between the pair of substrates, the liquid crystal layer having a display alignment state and a non-display alignment state which differ from each other and being subjected to an initialization process so as to be changed from the non-display alignment state to the display alignment state before an image is displayed; storage capacitor electrodes provided on one of the pair of substrates; pixel electrodes provided so as to overlap with the storage capacitor electrodes with an insulator interposed therebetween and disposed between the storage capacitor electrode and the liquid crystal layer, the pixel electrode having a lack portion in a region overlapping with the storage capacitor electrode; and drive means for generating potential difference between the storage capacitor electrode and the pixel electrode to thereby perform the initialization process.

公开(公告)号：US06440324B1

公开(公告)日：2002-08-27

申请号：US09648441

申请日：2000-08-25

申请人： Koichi Hayashi ,  Akira Ando ,  Toshikatsu Hisaki ,  Yuji Yoshikawa ,  Masanori Kimura

发明人： Koichi Hayashi ,  Akira Ando ,  Toshikatsu Hisaki ,  Yuji Yoshikawa ,  Masanori Kimura

IPC分类号： C04B3548

CPC分类号： H03H9/178 ,  C04B35/491 ,  C04B35/493 ,  H01L41/0471 ,  H01L41/083 ,  H01L41/107 ,  H01L41/1876

摘要： A piezoelectric ceramic composition capable of obtaining a piezoelectric member that can provide a sufficient sintering density even by firing at a low temperature besides only allowing small amount of Pb to be evaporated by firing to reduce deterioration of electrical characteristics, wherein the piezoelectric member comprises a perovskite structure oxide of the piezoelectric ceramic composition containing Pb, Ti, Zr, Ma (Ma represents at least one of Cr, Mn, Fe and Co) and Md (Md represents at least one of Nb, Sb, Ta and W), and wherein a represents the total content (in mole) of Ma, and b, c, d and e (in mole) represent the contents of Sb, Nb, Ta and W, respectively, and 0.50

摘要翻译： 一种压电陶瓷组合物，其能够获得即使在低温下也可以提供足够的烧结密度的压电陶瓷组合物，除了仅通过烧制使少量的Pb蒸发以减少电特性的劣化，其中压电元件包括​​钙钛矿 包含Pb，Ti，Zr，Ma的压电陶瓷组合物的结构氧化物（Ma表示Cr，Mn，Fe和Co中的至少一种），Md（Md表示Nb，Sb，Ta和W中的至少一种），其中 a表示Ma的总含量（以摩尔计），b，c，d和e（以摩尔计）分别表示Sb，Nb，Ta和W的含量，0.50

公开(公告)号：US06197109B1

公开(公告)日：2001-03-06

申请号：US09329615

申请日：1999-06-10

申请人： Makoto Iida ,  Masaro Tamatsuka ,  Wataru Kusaki ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Masaro Tamatsuka ,  Wataru Kusaki ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B1504

CPC分类号： C30B29/06 ,  C30B15/203

摘要： There is disclosed a method for producing a silicon single crystal by growing the silicon single crystal by the Czochralski method, characterized in that the crystal is pulled at a pulling rate [mm/min] within a range of from V1 to V1+0.062×G while the crystal is doped with nitrogen during the growing, where G [K/mm] represents an average temperature gradient along the crystal growing direction, which is for a temperature range of from the melting point of silicon to 1400° C., and provided in an apparatus used for the crystal growing, and V1 [mm/min] represents a pulling rate at which an OSF ring disappears at the center of the crystal when the crystal is pulled by gradually decreasing the pulling rate. The method of the present invention can produce silicon single crystal wafers exhibiting an extremely low defect density over the entire plane of the crystal, in particular, with no small pits, and having an excellent oxide dielectric breakdown voltage, based on the CZ method under widely and easily controllable production conditions at a high production rate and high productivity.

摘要翻译： 公开了通过使用Czochralski法生长硅单晶来制造单晶的方法，其特征在于，以V1至V1 + 0.062×G的范围内的拉伸速度[mm / min]拉伸晶体，同时 晶体在生长期间掺杂有氮，其中G [K / mm]表示沿着晶体生长方向的平均温度梯度，其处于从硅熔点至1400℃的温度范围内，并且设置在 用于晶体生长的装置，V1 [mm / min]表示当通过逐渐降低拉伸速率拉动晶体时OSF环在晶体的中心消失的拉伸速率。 本发明的方法可以在广泛的CZ方法的基础上生产出在整个晶体平面上显示出非常低的缺陷密度的硅单晶晶片，特别是没有小凹坑，并且具有优异的氧化物介电击穿电压 并且以高生产率和高生产率容易控制生产条件。

公开(公告)号：US6120598A

公开(公告)日：2000-09-19

申请号：US459849

申请日：1999-12-13

申请人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/20 ,  C30B15/00 ,  C30B15/14 ,  C30B29/06 ,  C30B15/08

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/206

摘要： A single crystal is grown in accordance with a Czochralski method such that the time for passing through a temperature zone of 1150-1080.degree. C. is 20 minutes or less, or such that the length of a portion of the single crystal corresponding to the temperature zone of 1150-1080.degree. C. in the temperature distribution is 2.0 cm or less. Alternatively, the single crystal is grown such that the time for passing through a temperature zone of 1250-1200.degree. C. is 20 minutes or less, or such that the length of a portion of the single crystal corresponding to the temperature zone of 1250-1200.degree. C. in the temperature distribution is 2.0 cm or less. This method decreases both the density and size of so-called grown-in defects such as FPD (100 defects/cm.sup.2 or less), LSTD, and COP (10 defects/cm.sup.2 or less) to thereby enable efficient production of a single crystal having an excellent good chip yield (80% or greater) in terms of oxide dielectric breakdown voltage characteristics.

摘要翻译： 根据切克劳斯斯基方法生长单晶，使得通过1150-1080℃的温度区的时间为20分钟或更短，或者使得单晶的一部分的长度对应于温度 1150-1080℃的区域的温度分布为2.0cm以下。 或者，单晶生长使得通过1250-1200℃的温度区的时间为20分钟或更短，或者使得对应于1250℃的温度区的单晶的一部分的长度， 1200℃，温度分布为2.0cm以下。 该方法既降低FPD（100个缺陷/ cm 2以下），LSTD，COP（10个缺陷/ cm 2以下）等所谓的内置缺陷的密度和尺寸，能够有效地制造具有 在氧化物绝缘击穿电压特性方面，极好的芯片产量（80％以上）优异。

公开(公告)号：US06077343A

公开(公告)日：2000-06-20

申请号：US318055

申请日：1999-05-25

申请人： Makoto Iida ,  Masaro Tamatsuka ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Masaro Tamatsuka ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/02 ,  C30B15/00 ,  C20B25/02

CPC分类号： C30B29/06 ,  C30B15/203 ,  Y10S117/917

摘要： There is disclosed a method for producing a silicon single crystal wafer wherein a silicon single crystal is grown in accordance with the CZ method with doping nitrogen in an N-region in a defect distribution chart which shows a defect distribution in which the horizontal axis represents a radial distance D (mm) from the center of the crystal and the vertical axis represent a value of F/G (mm.sup.2 /.degree. C..multidot.min), where F is a pulling rate (mm/min) of the single crystal, and G is an average intra-crystal temperature gradient (.degree. C./mm) along the pulling direction within a temperature range of the melting point of silicon to 1400.degree. C. There can be provided a method of producing a silicon single crystal wafer consisting of N-region where neither V-rich region nor I-rich region is present in the entire surface of the crystal by CZ method, under the condition that can be controlled easily in a wide range, in high yield, and in high productivity.

摘要翻译： 公开了一种用于制造硅单晶晶片的方法，其中在缺陷分布图中，根据CZ方法在N区域中掺杂氮，生长硅单晶，其示出了水平轴表示的缺陷分布 从晶体中心的径向距离D（mm）和纵轴表示F / G（mm 2 /℃×min）的值，其中F是单晶的拉伸速率（mm / min），G 是在硅的熔点至1400℃的温度范围内沿拉伸方向的平均晶体内温度梯度（DEG C./mm）。可以提供一种由N形成的硅单晶晶片的制造方法 在通过CZ法在晶体的整个表面中不存在富V区和富I区的条件下，可以在宽范围，高收率，高生产率下容易地控制的条件下进行。

公开(公告)号：US6048395A

公开(公告)日：2000-04-11

申请号：US197130

申请日：1998-11-20

申请人： Makoto Iida ,  Satoshi Suzuki ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Satoshi Suzuki ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/00 ,  C30B15/14 ,  C30B29/06 ,  H01L21/02 ,  H01L21/208 ,  H01L21/322 ,  C30B15/20

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/203

摘要： A method for producing a silicon single crystal in accordance with the Czochralski method. The single crystal is grown in an N.sub.2 (V) region where a large amount of precipitated oxygen and which is located within an N region located outside an OSF ring region, or is grown in a region including the OSF ring region, N.sub.1 (V) and N.sub.2 (V) regions located inside and outside the OSF ring region, in a defect distribution chart which shows a defect distribution in which the horizontal axis represents a radial distance D (mm) from the center of the crystal and the vertical axis represents a value of F/G (mm.sup.2 /.degree.C..multidot.min), where F is a pulling rate (mm/min) of the single crystal, and G is an average intra-crystal temperature gradient (.degree.C./mm) along the pulling direction within a temperature range of the melting point of silicon to 1400.degree. C. The method allows production of silicon single crystal wafers in which neither FPDs nor L/D defects exist on the wafer surface, and gettering capability stemming from oxygen precipitation is provided over the entire wafer surface, and silicon single crystal wafers wherein OSF nuclei exit but no OSF ring appears when the wafer is subjected to thermal oxidation treatment, neither FPDs nor L/D defects exist on the wafer surface, and gettering capability is provided over the entire wafer surface.

摘要翻译： 根据Czochralski法生产硅单晶的方法。 单晶生长在大量析出氧并且位于OSF环外部的N区内的N2（V）区域中，或者在包括OSF环区域N1（V）的区域中生长， 和位于OSF环区域内外的N 2（V）区域的缺陷分布图，其表示水平轴表示与晶体中心的径向距离D（mm）的缺陷分布，纵轴表示 F / G值（mm2 /℃×min），其中F是单晶的拉伸速率（mm / min），G是沿着拉伸的平均晶体内梯度（DEG C./mm） 在硅熔点的温度范围内的方向为1400℃。该方法允许生产晶片表面上不存在FPD和L / D缺陷的硅单晶晶片，并且提供由氧沉淀引起的吸杂能力 整个晶圆表面，硅单面 当晶片进行热氧化处理时，在晶片表面上不存在FPD和L / D缺陷，并且在整个晶片表面上提供吸杂能力，其中OSF核离开而没有出现OSF环的晶体晶片。

公开(公告)号：US5902546A

公开(公告)日：1999-05-11

申请号：US854163

申请日：1997-05-09

申请人： Nozomu Kawasetsu ,  Masatomo Shinohara ,  Kouichiro Imakiire ,  Masanori Kimura ,  Keiichi Shiraishi ,  Masayuki Hayakawa ,  Kazuhisa Shibue ,  Yoshimasa Okubo ,  Naoki Tokizane

发明人： Nozomu Kawasetsu ,  Masatomo Shinohara ,  Kouichiro Imakiire ,  Masanori Kimura ,  Keiichi Shiraishi ,  Masayuki Hayakawa ,  Kazuhisa Shibue ,  Yoshimasa Okubo ,  Naoki Tokizane

IPC分类号： F01D5/04 ,  B21K1/36 ,  C22C1/04 ,  C22C21/00 ,  C23C4/12 ,  F02B39/00 ,  F04D29/02 ,  F04D29/28 ,  F04D29/30 ,  F02B37/00

CPC分类号： B21K1/36 ,  C22C1/0416 ,  C22C21/00 ,  C23C4/123 ,  F04D29/023 ,  F04D29/284 ,  F05D2230/24 ,  F05D2230/25 ,  F05D2230/42 ,  F05D2300/173 ,  F05D2300/518 ,  F05D2300/609

摘要： There is disclosed a high heat resistant aluminum alloy impeller, which is suitably used as an impeller, especially for a centrifugal compressor, and for the rotor and the blade of a turbo molecular pump or the scroll of a scroll compressor. Also, a method for manufacturing this aluminum alloy impeller is disclosed. The impeller is composed of an Al--Fe rapid solidification aluminum alloy, which is produced by a spray forming process for spraying a molten metal with inert gas and rapidly solidifying the metal at a cooling speed of 10.sup.2 .degree. C./sec. or higher while simultaneously deposing the metal. The rapid solidification aluminum alloy is subjected to hot extrusion processing within a temperature range of 200.degree. C. to 600.degree. C. and further subjected to hot forging.

摘要翻译： 公开了一种高耐热铝合金叶轮，其适合用作叶轮，特别用于离心式压缩机，以及涡轮分子泵的转子和叶片或涡旋压缩机的涡旋。 此外，公开了一种用于制造该铝合金叶轮的方法。 叶轮由Al-Fe快速凝固铝合金组成，其通过用惰性气体喷射熔融金属并以102℃/秒的冷却速度快速固化的喷射成形方法制造。 或更高，同时使金属脱落。 快速凝固铝合金在200〜600℃的温度范围内进行热挤压加工，并进一步进行热锻。

公开(公告)号：US5882397A

公开(公告)日：1999-03-16

申请号：US944869

申请日：1997-10-06

申请人： Eiichi Iino ,  Makoto Iida ,  Masahiko Urano ,  Masanori Kimura ,  Shozo Muraoka

发明人： Eiichi Iino ,  Makoto Iida ,  Masahiko Urano ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/32 ,  C30B15/30 ,  C30B29/06 ,  H01L21/208

CPC分类号： C30B15/30 ,  Y10T117/1032 ,  Y10T117/1072

摘要： In a crystal pulling method in which a growing single crystal is initially pulled by a seed chuck and subsequently pulled by lifting jig in the middle of the pulling operation, the speed Va of the seed chuck relative to the lifting jig is decreased, while the rising speed Vb of the lifting jig increases, from a first point where switching of the pulling mechanism from the seed chuck to the lifting jig is started. The total speed Vt=Vb+Va is constantly maintained at a desired pulling speed V up to a third point where the shifting of the load from the seed chuck to the lifting jig is started. Subsequently, the total speed Vt is made less than the desired pulling speed V from the third point where the shifting of the load from the seed shuck to the lifting jig is started. This enables accurate growth of a crystal.

摘要翻译： 在晶种牵引方法中，种子卡盘最初拉长生长的单晶，随后在牵引操作的中间通过提升夹具拉动，晶种卡盘相对于提升夹具的速度Va减小，同时上升 从牵引机构从种子卡盘切换到提升夹具的第一点开始升降夹具的速度Vb增加。 总速度Vt = Vb + Va恒定地保持在期望的牵引速度V直到第三点，其中负载从种子卡盘移动到提升夹具开始。 随后，使总速度Vt小于从起子夹头到提升夹具的负载偏移开始的第三点的期望拉速V。 这使得晶体的准确生长。