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231 条记录 (耗时 0.033 秒)

    Vacuum-cavity MEMS resonator
    51.
    发明授权
    Vacuum-cavity MEMS resonator 失效
    真空腔MEMS谐振器

    公开(公告)号：US06808954B2

    公开(公告)日：2004-10-26

    申请号：US09949368

    申请日：2001-09-07

    申请人： Qing Ma ,  Peng Cheng ,  Valluri Rao

    发明人： Qing Ma ,  Peng Cheng ,  Valluri Rao

    IPC分类号： H01L2100

    CPC分类号： B81B7/0077 ,  H03H3/0072 ,  H03H9/1057 ,  H03H9/2405 ,  H03H9/2431 ,  H03H9/2457 ,  H03H9/2463 ,  H03H2009/02503 ,  H03H2009/02511

    摘要： A microelectromechanical (MEMS) resonator with a vacuum-cavity is fabricated using polysilicon-enabled release methods. A vacuum-cavity surrounding the MEMS beam is formed by removing release material that surrounds the beam and sealing the resulting cavity under vacuum by depositing a layer of nitride over the structure. The vacuum-cavity MEMS resonators have cantilever beams, bridge beams or breathing-bar beams.

    摘要翻译： 具有真空腔的微机电（MEMS）谐振器是使用多晶硅启用释放方法制造的。 围绕MEMS光束的真空腔通过去除围绕光束的释放材料并通过在结构上沉积氮化层而在真空下密封所得空腔来形成。 真空腔MEMS谐振器具有悬臂梁，桥梁或呼吸杆梁。

    Memory Media Including Domains HavingTrapped Charges at a Top Region Thereof
    54.
    发明申请
    Memory Media Including Domains HavingTrapped Charges at a Top Region Thereof 审中-公开
    记忆媒体包括在其顶部地区已收取费用的域名

    公开(公告)号：US20090168635A1

    公开(公告)日：2009-07-02

    申请号：US11964608

    申请日：2007-12-26

    申请人： QUAN ANH TRAN ,  Nathan R. Franklin ,  Qing Ma ,  Valluri Rao

    发明人： QUAN ANH TRAN ,  Nathan R. Franklin ,  Qing Ma ,  Valluri Rao

    IPC分类号： G11B9/00 ,  B05D5/12

    CPC分类号： G11B9/02

    摘要： A memory media and a method to provide same. The memory media includes: a media layer comprising a ferroelectric layer having a bottom surface and a top surface; a plurality of adjacent charge domains defined in the ferroelectric layer, the domains including alternating up domains and down domains each extending between the bottom surface and the top surface; and a trapped charge region adjacent a top surface of the media layer, the trapped charge region including charges in addition to the charges present in the charge domains at regions thereof other than regions adjacent the top surface of the media layer.

    摘要翻译： 一种记忆媒体和一种提供相同的方法。 存储介质包括：介质层，其包括具有底表面和顶表面的铁电层; 限定在铁电体层中的多个相邻的电荷域，所述畴包括各自在底表面和顶表面之间延伸的交替域和下畴; 以及与介质层的顶表面相邻的捕获的电荷区域，除了存在于电荷区域中的电荷之外，捕获的电荷区域还包括除了与介质层的顶表面相邻的区域之外的区域中的电荷。

    Data storage medium, data storage device containing same, and method of manufacturing data storage device containing same
    56.
    发明申请
    Data storage medium, data storage device containing same, and method of manufacturing data storage device containing same 有权
    数据存储介质，包含该数据存储介质的数据存储装置，以及包含该数据存储介质的数据存储装置的制造方法

    公开(公告)号：US20090323506A1

    公开(公告)日：2009-12-31

    申请号：US12215992

    申请日：2008-06-30

    申请人： Robert Chen ,  Qing Ma ,  Valluri Rao

    发明人： Robert Chen ,  Qing Ma ,  Valluri Rao

    IPC分类号： G11B9/00 ,  G11B3/70

    CPC分类号： G11B9/02 ,  G11B9/065

    摘要： A data storage medium includes a piezoelectric film (101) having a surface (111) including a halogen. In one embodiment, the halogen exists in an atomic concentration of at least approximately 10 percent. The result is a hydrophobic surface conducive to long-lasting scanning probe tips, low contamination, and stable surface charge. A data storage device incorporating the data storage medium includes an enclosure (205) containing the data storage medium and an adjacent scanning probe (230) wherein the enclosure has a relative humidity of at least approximately 40 percent and at least a portion of the scanning probe is coated with a layer of water.

    摘要翻译： 数据存储介质包括具有包括卤素的表面（111）的压电膜（101）。 在一个实施方案中，卤素以至少约10％的原子浓度存在。 其结果是疏水性表面有利于长时间的扫描探针尖端，低污染和稳定的表面电荷。 结合数据存储介质的数据存储设备包括容纳数据存储介质的外壳（205）和相邻的扫描探针（230），其中外壳具有至少大约40％的相对湿度和扫描探针的至少一部分 涂有一层水。

    Resonator frequency correction by modifying support structures
    57.
    发明授权
    Resonator frequency correction by modifying support structures 失效

    公开(公告)号：US06650204B2

    公开(公告)日：2003-11-18

    申请号：US10307053

    申请日：2002-11-27

    申请人： Qing Ma ,  Peng Cheng ,  Valluri Rao

    发明人： Qing Ma ,  Peng Cheng ,  Valluri Rao

    IPC分类号： H03H924

    CPC分类号： H03H3/0077 ,  H03H9/2463 ,  Y10S977/70 ,  Y10S977/721 ,  Y10S977/733 ,  Y10S977/888 ,  Y10S977/889

    摘要： A method including to a resonator coupled to at least one support structure on a substrate, the resonator having a resonating frequency in response to a frequency stimulus, modifying the resonating frequency by modifying the at least one support structure. A method including forming a resonator coupled to at least one support structure on a chip-level substrate, the resonator having a resonating frequency; and modifying the resonating frequency of the resonator by modifying the at least one support structure. A method including applying a frequency stimulus to a resonator coupled to at least one support structure on a chip-level substrate determining a resonating frequency; and modifying the resonating frequency of the resonator by modifying the at least one support structure. An apparatus including a resonator coupled to at least one support structure on a chip-level substrate, the resonator having a resonating frequency tuned by the modification of the at least one support structure to a selected frequency stimulus.

    Tunable inductor using microelectromechanical switches
    58.
    发明授权
    Tunable inductor using microelectromechanical switches 有权
    可调电感采用微机电开关

    公开(公告)号：US06573822B2

    公开(公告)日：2003-06-03

    申请号：US09884738

    申请日：2001-06-18

    申请人： Qing Ma ,  Peng Cheng ,  Valluri Rao

    发明人： Qing Ma ,  Peng Cheng ,  Valluri Rao

    IPC分类号： H01F500

    CPC分类号： H01F5/003 ,  H01F17/0006 ,  H01F21/12 ,  H01H59/0009 ,  H01L24/19 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/00

    摘要： A tunable inductor is disclosed. The tunable inductor comprises a helical or spiral inductor formed on a semiconductor substrate having an input and an output. The helical inductor has a full length that provides a full inductance. Also, a full inductance switch is disposed between the output and the full length of the helical inductor. Finally, at least one microelectromechanical (MEMS) switch is disposed between the output and an intermediate location of the helical inductor.

    摘要翻译： 公开了一种可调电感器。 可调电感器包括形成在具有输入和输出的半导体衬底上的螺旋或螺旋形电感器。 螺旋电感器具有提供全电感的全长。 此外，全电感开关设置在螺旋电感器的输出端和全长之间。 最后，至少一个微机电（MEMS）开关设置在螺旋电感器的输出端和中间位置之间。